# Power MOSFET, N Channel, 60 V, 90 A, 4600 µohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:2849657/)

**URL**: https://novapart.co/products/STL90N6F7/power-mosfet-n-channel-60-v-90-a-4600-ohm
**SKU**: STL90N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5770
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 94W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 4600µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2849657/)

**STL90N6F7** 

Datasheet 

N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package 

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PowerFLAT 5x6<br>**----- End of picture text -----**<br>


## **Features** 

|**Features**<br>**Order code**<br>**V DS**<br>STL90N6F7<br>60 V<br>Among the lowest RDS(on)on the market<br>Excellent FoM (figure of merit)<br>~~a~~|**RDS(on) max**<br>5.4 mΩ|**ID**<br>90 A|
|---|---|---|



- Among the lowest RDS(on) on the market 

- Excellent FoM (figure of merit) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

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D(5, 6, 7, 8) 8 7 6 5<br>G(4)<br>1 2 3 4<br>S(1, 2, 3) Top View<br>AM15540v2<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

## **Product status link** ~~a~~ STL90N6F7 

|**Product summary**<br>~~a~~|**Product summary**<br>~~a~~|
|---|---|
|**Order code**|STL90N6F7|
|**Marking**|90N6F7|
|**Package**|PowerFLAT 5x6|
|**Packing**|Tape and reel|



**DS10917** - **Rev 3** - **January 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STL90N6F7 Electrical ratings** 

**1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|± 20|V|
|ID (1)|Drain current (continuous) at TC= 25 °C|90|A|
|ID (1)|Drain current (continuous) at TC= 100 °C|66|A|
|IDM (1) (2)|Drain current (pulsed)|360|A|
|ID (3)|Drain current (continuous) at Tpcb= 25 °C|21|A|
|ID (3)|Drain current (continuous) at Tpcb= 100 °C|15|A|
|IDM (2) (3)|Drain current (pulsed)|84|A|
|PTOT (1)|Total dissipation at TC= 25 °C|94|W|
|PTOT (3)|Total dissipation at Tpcb= 25 °C|4.8|W|
|Tstg|Storage temperature|-55 to 175|°C|
|Tj|Max. operating junction temperature|175|°C|



_1. This value is rated according to Rthj-c_ 

_2. Pulse width limited by safe operating area_ 

_3. This value is rated according to Rthj-pcb_ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb (1)|Thermal resistance junction-pcb max.|31.3|°C/W|
|Rthj-case|Thermal resistance junction-case max.|1.6|°C/W|



_1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec_ 

**DS10917** - **Rev 3** 

**page 2/14** 

**STL90N6F7 Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 3. On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0 V|60|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V<br>VDS= 60 V|||1|µA|
|IGSS|Gate-body leakage<br>current|VGS= 20 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 10.5 A||0.0046|0.0054|Ω|



**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|1600|-|pF|
|Coss|Output capacitance||-|880|-|pF|
|Crss|Reverse transfer capacitance||-|66|-|pF|
|Qg|Total gate charge|VDD= 30 V, ID= 21 A,<br>VGS= 10 V|-|25|-|nC|
|Qgs|Gate-source charge||-|7.2|-|nC|
|Qgd|Gate-drain charge||-|8.1|-|nC|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 30 V, ID= 10.5 A,<br>RG= 4.7 Ω, VGS= 10 V|-|15|-|ns|
|tr|Rise time||-|17.6|-|ns|
|td(off)|Turn-off delay time||-|24.4|-|ns|
|tf|Fall time||-|7.8|-|ns|



**DS10917** - **Rev 3** 

**page 3/14** 

**STL90N6F7 Electrical characteristics** 

**Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD (1)|Forward on voltage|ISD= 21 A, VGS= 0 V|-||1.2|V|
|trr|Reverse recovery time|ID= 21 A, di/dt = 100 A/µs<br>VDD= 48 V|-|39.6||ns|
|Qrr|Reverse recovery charge||-|36||nC|
|IRRM|Reverse recovery current||-|1.8||A|



_1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%_ 

**DS10917** - **Rev 3** 

**page 4/14** 

**STL90N6F7 Electrical characteristics curves** 

## **2.1 Electrical characteristics curves** 

**Figure 1. Safe operating area** 

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I D GIPG100615OD6CLSOA<br>(A)<br>10  [2]<br>100 µs<br>1 ms<br>10  [1]<br>10 ms<br>T j = 175  ° C<br>T c = 25 °C  10 ms<br>10  [0] single pulse<br>10  [-1] 10  [0] 10  [1] V DS (V)<br>DS(on)<br>Operation in this area is<br>limited by max. R<br>**----- End of picture text -----**<br>


**Figure 2. Thermal impedance** 

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K  GIPG100615OD6CLZTH<br>10  [-1]<br>10  [-2]<br>10  [-5] 10  [-4] 10  [-3] 10  [-2] 10  [-1] t p (s)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3. Output characteristics Figure 4. Transfer characteristics<br>I D GIPG100615OD6CLOCH I D GIPG100615OD6CLTCH<br>(A) (A)<br>V GS = 8, 9, 10 V<br>160 V DS = 10 V<br>V GS = 7 V 150<br>120<br>V GS = 6 V<br>100<br>80<br>V GS = 5 V 50<br>40<br>0 0<br>0 2 4 6 8 V DS (V) 0 2 4 6 8 V GS (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance<br>V GS GIPG100615OD6CLQVG R DS(on) GIPG100615OD6CLRID<br>(V) (mΩ)<br>12 V DD = 30 4.8 V GS = 10 V<br>I D = 21 A<br>10<br>4.6<br>8<br>6<br>4.4<br>4<br>4.2<br>2<br>0 4.0<br>0 10 20 30 Q g (nC) 0 6 12 18 I D (A)<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 5/14** 

**STL90N6F7 Electrical characteristics curves** 

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**----- Start of picture text -----**<br>
Figure 8. Normalized gate threshold voltage vs<br>Figure 7. Capacitance variations<br>temperature<br>C  GIPG100615OD6CLCVR<br>(pF) V GS(th) GIPG100615OD6CLVTH<br>(norm.)<br>I D = 250 µA<br>1.1<br>C ISS 1.0<br>10  [3]<br>0.9<br>C OSS<br>0.8<br>10  [2] 0.7<br>f = 1 MHz<br>0.6<br>C RSS 0.5<br>10  [1]<br>10  [-1] 10  [0] 10  [1] V DS (V) 0.4<br>-75 -25 25 75 125 175 T j (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature<br>R DS(on) GIPG100615OD6CLRON V (BR)DSS GIPG100615OD6CLBDV<br>(norm.) (norm.)<br>1.8 V GS = 10 V 1.04 I D = 1 mA<br>1.6<br>1.4 1.02<br>1.2<br>1.00<br>1.0<br>0.98<br>0.8<br>0.6 0.96<br>-75 -25 25 75 125 175 T j (°C) -75 -25 25 75 125 175 T j (°C)<br>**----- End of picture text -----**<br>


## **Figure 11. Source-drain diode forward characteristics** 

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V SD GIPG100615OD6CLSDF<br>(V)<br>T j = -55 °C<br>1.0<br>T j = 25 °C<br>0.9<br>T j = 175 °C<br>0.8<br>0.7<br>0.6<br>0.5<br>0 10 20 I SD (A)<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 6/14** 

**STL90N6F7 Test circuits** 

**3 Test circuits** 

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Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for inductive load switching and<br>Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


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Figure 17. Switching time waveform<br>Figure 16. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 7/14** 

**STL90N6F7 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 PowerFLAT 5x6 type C package information** 

**Figure 18. PowerFLAT 5x6 type C package outline** 

**==> picture [75 x 406] intentionally omitted <==**

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Bottom view<br>Side view<br>Top view<br>8231817_typeC_Rev18<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 8/14** 

**STL90N6F7 PowerFLAT 5x6 type C package information** 

**Table 7. PowerFLAT 5x6 type C package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.20|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.20|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|e||1.27||
|E|5.95|6.15|6.35|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.75|0.90|1.05|
|K|1.05||1.35|
|L|0.725||1.025|
|L1|0.05|0.15|0.25|
|θ|0°||12°|



**DS10917** - **Rev 3** 

**page 9/14** 

**STL90N6F7** 

**PowerFLAT 5x6 type C SUBCON package information** 

**4.2 PowerFLAT 5x6 type C SUBCON package information** 

**Figure 19. PowerFLAT 5x6 type C SUBCON package outline** 

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**==> picture [90 x 7] intentionally omitted <==**

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8472137_SUBCON_998G_REV4<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 10/14** 

**STL90N6F7** 

**PowerFLAT 5x6 type C SUBCON package information** 

**Table 8. PowerFLAT 5x6 type C SUBCON package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|0.90|0.95|1.00|
|A1||0.02||
|b|0.35|0.40|0.45|
|b1||0.30||
|c|0.21|0.25|0.34|
|D|||5.10|
|D1|4.80|4.90|5.00|
|D2|4.01|4.21|4.31|
|e|1.17|1.27|1.37|
|E|5.90|6.00|6.10|
|E1|5.70|5.75|5.80|
|E2|3.54|3.64|3.74|
|E4|0.15|0.25|0.35|
|E5|0.26|0.36|0.46|
|H|0.51|0.61|0.71|
|K|0.95|||
|L|0.51|0.61|0.71|
|L1|0.06|0.13|0.20|
|L2|||0.10|
|P|1.00|1.10|1.20|
|θ|8°|10°|12°|



**DS10917** - **Rev 3** 

**page 11/14** 

**STL90N6F7 PowerFLAT 5x6 type C SUBCON package information** 

**Figure 20. PowerFLAT 5x6 recommended footprint (dimensions are in mm)** 

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**==> picture [83 x 6] intentionally omitted <==**

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8231817_FOOTPRINT_simp_Rev_18<br>**----- End of picture text -----**<br>


**DS10917** - **Rev 3** 

**page 12/14** 

**STL90N6F7** 

## **Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Mar-2015|1|First release.|
|10-Jun-2015|2|In Section 2 Electrical characteristics:<br>- updated Table 5: Dynamic<br>- updated Table 6: Switching times<br>- updated Table 7: Source-drain diode<br>Added Section 2.1 Electrical characteristics (curves)|
|24-Jan-2020|3|UpdatedSection  4  Package information.<br>Minor text changes.|



**DS10917** - **Rev 3** 

**page 13/14** 

**STL90N6F7** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS10917** - **Rev 3** 

**page 14/14** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl90n6f7/mosfet-n-ch-60v-90a-powerflat/dp/2849657)
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