# Power MOSFET, P Channel, 60 V, 42 A, 0.023 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:2807202/)

**URL**: https://novapart.co/products/STL42P6LLF6/power-mosfet-p-channel-60-v-42-a-0023-ohm
**SKU**: STL42P6LLF6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6790
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-42A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET F6 |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.023ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807202/)

## **STL42P6LLF6** 

## P-channel -60 V, 23 mΩ typ., -42 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STL42P6LLF6|-60 V|26 mΩ|-42 A|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STL42P6LLF6|42P6LLF6|PowerFLAT™ 5x6|Tape and reel|



This is information on a product in full production. 

_www.st.com_ 

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|**Contents**<br>**STL42P6LLF6**|**Contents**<br>**STL42P6LLF6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package mechanical data ............................................................. 10**|
||4.1<br>PowerFLAT™ 5x6 type R package information .............................. 11|
||4.2<br>PowerFLAT™ 5x6 packing information ........................................... 13|
|**5**|**Revision history ............................................................................ 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|-60|V|
|VGS|Gate-source voltage|± 20|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|-42|A|
|ID_(1)_|Drain current (continuous) at TC= 100 °C|-30|A|
|ID_(1)(3)_|Drain current (pulsed)|-168|A|
|ID_(2)_|Drain current (continuous) at Tpcb= 25 °C|-9|A|
|ID_(2)_|Drain current (continuous) at Tpcb= 100 °C|-6.6|A|
|IDM_(2)(3)_|Drain current (pulsed)|-36|A|
|PTOT_(1)_|Total dissipation at TC= 25 °C|100|W|
|PTOT_(2)_|Total dissipation at Tpcb= 25 °C|4.8|W|
|Tstg|Storage temperature range|-55 to 175|°C|
|Tj|Operating junction temperature range|||



## **Notes:** 

- (1)The value is rated by Rthj-case. 

(2)The value is rated by Rthj-pcb. 

- (3)Pulse width is limited by safe operating area. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|1.5|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb max|31.3|°C/W|



## **Notes:** 

(1)When mounted on FR-4 board of 1 inch², 2 Oz Cu, t < 10 s. 

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**STL42P6LLF6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC= 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= -250 µA|-60|||V|
|IDSS|Zero gate voltage Drain<br>current|VGS= 0 V, VDS= -60 V|||-1|µA|
|||VGS= 0 V, VDS= -60 V,<br>TC= 125 °C_(1)_|||-10|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= -250µA|-1||-2.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= -10 V, ID= -4.5 A||23|26|mΩ|
|||VGS= -4.5 V, ID= -4.5 A||28|34||



## **Notes:** 

(1)Defined by design, not subject to production testing 

**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= -25 V, f = 1 MHz,<br>VGS= 0 V|-|3780|-|pF|
|Coss|Output capacitance||-|262|-|pF|
|Crss|Reverse transfer<br>capacitance||-|170|-|pF|
|Qg|Totalgate charge|VDD= -30 V, ID= -9 A,<br>VGS= -4.5 V<br>(see_Figure 14: "Gate charge_<br>_test circuit"_)|-|30|-|nC|
|Qgs|Gate-source charge||-|10.8|-|nC|
|Qgd|Gate-drain charge||-|10.5|-|nC|
|RG|Gate input resistance|ID= 0 A, f = 1 MHz|-|1.7|-|Ω|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= -30 V, ID= -4.5 A,<br>RG= 4.7 Ω, VGS= -10 V<br>(see_Figure 13: "Switching_<br>_times test circuit for resistive_<br>_load"_)|-|51.4|-|ns|
|tr|Rise time||-|39|-|ns|
|td(off)|Turn-off-delaytime||-|171|-|ns|
|tf|Fall time||-|21|-|ns|



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**Electrical characteristics** 

**Table 7: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-|-42||A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-|-168||A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= -9 A|-||-1.1|V|
|trr|Reverse recoverytime|ISD= -9 A, di/dt = 100 A/µs,<br>VDD= -4.8 V, Tj= 150 °C<br>(see_Figure 15: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|34||ns|
|Qrr|Reverse recoverycharge||-|48||nC|
|IRRM|Reverse recovery current||-|-2.8||A|



## **Notes:** 

(1)Pulse width limited by safe operating area 

(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

**Figure 2: Safe operating area** 

**Figure 3: Thermal impedance** 

**Figure 4: Output characteristics** 

**Figure 5: Transfer characteristics** 

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**Electrical characteristics** 

## **STL42P6LLF6** 

**==> picture [455 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Normalized gate threshold voltage vs  Figure 7: Normalized V(BR)DSS vs temperature<br>temperature<br>**----- End of picture text -----**<br>


**Figure 8: Static drain-source on-resistance** 

**==> picture [174 x 162] intentionally omitted <==**

**Figure 9: Normalized on-resistance vs. temperature** 

**==> picture [178 x 162] intentionally omitted <==**

**Figure 10: Gate charge vs gate-source voltage** 

**==> picture [170 x 161] intentionally omitted <==**

**Figure 11: Capacitance variations voltage** 

**==> picture [181 x 159] intentionally omitted <==**

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## **Electrical characteristics** 

**Figure 12: Source-drain diode forward characteristics** 

**==> picture [171 x 164] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 13: Switching times test circuit for Figure 14: Gate charge test circuit resistive load** 

**==> picture [164 x 80] intentionally omitted <==**

**==> picture [166 x 66] intentionally omitted <==**

**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**==> picture [215 x 126] intentionally omitted <==**

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**Package mechanical** data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**STL42P6LLF6 Package mechanical** data 

**4.1 PowerFLAT™ 5x6 type R package information** 

**Figure 16: PowerFLAT™ 5x6 type R package outline** 

**==> picture [406 x 545] intentionally omitted <==**

**----- Start of picture text -----**<br>
A0ER_8231817_Rev14<br>**----- End of picture text -----**<br>


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**Package mechanical** data 

**Table 8: PowerFLAT™ 5x6 type R mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.20|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.20|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|e||1.27||
|E|5.95|6.15|6.35|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.75|0.90|1.05|
|K|1.275||1.575|
|L|0.60||0.80|
|L1|0.05|0.15|0.25|
|θ|0°||12°|



**Figure 17: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)** 

**==> picture [408 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
8231817_FOOTPRINT_simp_Rev_14<br>**----- End of picture text -----**<br>


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**Package mechanical** data 

## **4.2 PowerFLAT™ 5x6 packing information** 

**Figure 18: PowerFLAT™ 5x6 tape (dimensions are in mm)** 

**Figure 19: PowerFLAT™ 5x6 package orientation in carrier tape** 

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**Package mechanical** data 

**Figure 20: PowerFLAT™ 5x6 reel** 

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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-Oct-2013|1|First release.|
|25-Aug-2014|2|Modified:_Figure 1: "Internal schematic diagram"_<br>Updated:_Section 10: "Package mechanical data"_<br>Minor text changes|
|24-Feb-2015|3|In title description on cover page, changed 0.02 Ω to 0.023 Ω<br>In features table on cover page, changed 0.028 Ω to 0.026 Ω<br>Updated_Table 2: Absolute maximum ratings_<br>Updated_Table 4: Static_– renamed table and updated Static drain-<br>source on-resistance values<br>Updated_Table 5: Dynamic_– test conditions and all typical values<br>Updated_Table 6: Switching times_– test conditions and all typical<br>values<br>Updated_Table 7: Source-drain diode_– test conditions and all typical<br>values<br>Added_Section 2.2: Electrical characteristics (curves)_<br>Updated_Section 4: Package mechanical data_<br>Minor text changes|
|15-Nov-2016|4|Updated title, features table and description on cover page<br>Updated_Table 2: "Absolute maximum ratings"_<br>Updated_Table 4: "Static"_,_Table 5: "Dynamic"_,_Table 6: "Switching_<br>_times"_and_Table 7: "Source drain diode"_<br>Updated_Figure 9: "Normalized on-resistance vs. temperature"_<br>Updated_Section 4.1: "PowerFLAT™ 5x6 type R package information"_<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl42p6llf6/mosfet-p-ch-60v-42a-powerflat/dp/2807202)
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