# Power MOSFET, P Channel, 40 V, 42 A, 0.0105 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3129816RL/)

**URL**: https://novapart.co/products/STL42P4LLF6/power-mosfet-p-channel-40-v-42-a-00105-ohm
**SKU**: STL42P4LLF6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5170
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-42A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.0105ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET F6 |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | P Channel |
| Power Dissipation Pd | 75W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0105ohm |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.0105ohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129816RL/)

## **STL42P4LLF6** 

P-channel 40 V, 0.0155 Ω typ.,42 A, STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package 

Datasheet - production data 

## **Features** 

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**----- Start of picture text -----**<br>
Order code<br>STL42P4LLF6<br>1<br>2<br>3 Ww 4 wwe ; •<br>•<br>•<br>PowerFLAT™5x6 •<br>**----- End of picture text -----**<br>


**Order code VDS RDS(on) max. ID PTOT** STL42P4LLF6 40 V 0.018 Ω 42 A 75 W • Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

## **Applications** 

**Figure 1: Internal schematic diagram** 

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**----- Start of picture text -----**<br>
D(5, 6, 7, 8)<br>G(4)<br>S(1, 2, 3)<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

- [For the P-channel Power MOSFET, current ] polarity of voltages and current have to be reversed. 

**==> picture [31 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01475v4<br>**----- End of picture text -----**<br>


**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STL42P4LLF6|42P4LLF6|PowerFLAT™ 5x6|Tape and reel|



March 2015 DocID025618 Rev 2 

1/14 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STL42P4LLF6**|**Contents**<br>**STL42P4LLF6**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package mechanical data ............................................................... 9**|
||4.1<br>PowerFLAT™ 5x6 type R package information ................................ 9|
||4.2<br>PowerFLAT™ 5x6 packing information ........................................... 11|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

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**----- Start of picture text -----**<br>
Symbol  Parameter  Value  Unit<br>a<br>a VDS Drain-source voltage  40  V<br>VGS Gate-source voltage  ± 20  V<br>eo ID (1) Drain current (continuous) at TC = 25 °C   42  A<br>es ID (1) Drain current (continuous) at TC = 100 °C   29  A<br>eo ID (1)(3) Drain current (pulsed)  168  A<br>esa ID (2) Drain current (continuous) at Tpcb= 25 °C   10  A<br>a ID (2) Drain current (continuous) at Tpcb= 100 °C   7.5  A<br>IDM (2)(3) Drain current (pulsed)  40  A<br>es PTOT (1) Total dissipation at TC = 25 °C   75  W<br>a P TOT (2) Total dissipation at Tpcb= 25 °C   4.8  W<br>es<br>Tstg Storage temperature  -55 to 175  °C<br>ee<br>a Tj Maximum junction temperature  175  °C<br>**----- End of picture text -----**<br>


## **Notes:** 

- (1) The value is limited by Rthj-case. 

- (2) The value is limited by Rthj-pcb. 

- (3) Pulse width is limited by safe operating area. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|2.00|°C/W|
|Rthj-pcb<br>_(1)_|Thermal resistancejunction-pcb, single operation|31.3|°C/W|



## **Notes:** 

- (1)When mounted on FR-4 board of 1 inch², 2oz Cu, steady state 

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

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**STL42P4LLF6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min**<br>**.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source breakdown<br>voltage<br>VGS= 0 V, ID= 250 µA<br>40<br>V<br>IDSS<br>Zero gate voltage Drain<br>current<br>VGS= 0 V, VDS= 40 V<br>1<br>µA<br>VGS= 0 V, VDS= 40 V,<br>TC= 125 °C<br>10<br>µA<br>~~es~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ef~~<br>~~oon~~<br>~~eo~~|
|---|
|IGSS<br>Gate-bodyleakage current<br>VDS= 0 V, VGS= ± 20 V<br>±100<br>nA<br>~~a~~|
|VGS(th)<br>Gate threshold voltage<br>VDS= VGS, ID= 250µA<br>1<br>2.5<br>V<br>RDS(on)<br>Static drain-source on-<br>resistance<br>VGS= 10 V, ID= 5 A<br>0.0105<br>0.018<br>Ω<br>VGS= 4.5 V, ID= 5 A<br>0.021<br>0.026<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|
|**Table 5: Dynamic**|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>Ciss<br>Input capacitance<br>VDS= 25 V, f = 1 MHz,<br>VGS= 0 V<br>-<br>2850<br>-<br>pF<br>Coss<br>Output capacitance<br>-<br>270<br>-<br>pF<br>Crss<br>Reverse transfer<br>capacitance<br>-<br>180<br>-<br>pF<br>Qg<br>Totalgate charge<br>VDD= 20 V, ID= 10 A,<br>VGS= 4.5 V (see_Figure 14:_<br>_"Gate charge test circuit"_)<br>-<br>22<br>-<br>nC<br>Qgs<br>Gate-source charge<br>-<br>9.4<br>-<br>nC<br>Qgd<br>Gate-drain charge<br>-<br>7.3<br>-<br>nC<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~pop~~<br>~~ptt~~<br>~~———~~<br>~~a~~<br>~~ee~~|
|ID= 0 A, gate DC|
|RG<br>Gate input resistance<br>bias = 0 V, f = 1 MHz,<br>magnitude of alternative<br>-<br>1.4<br>-<br>Ω|
|signal = 20 mV|



## **Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 20 V, ID= 5 A<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Switching_<br>_times test circuit for_<br>_resistive load"_)|-|43|-|ns|
|tr|Rise time||-|47|-|ns|
|td(off)|Turn-off-delaytime||-|148|-|ns|
|tf|Fall time||-|19|-|ns|



For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

~~©~~ 4/14 DocID025618 Rev 2 

**STL42P4LLF6** 

**Electrical characteristics** 

**Table 7: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on<br>voltage|VGS= 0 V, ISD= 5 A|-||1.1|V|
|trr|Reverse<br>recovery time|ISD= 5 A, di/dt = 100 A/µs, VDD= 32 V,<br>Tj= 150 °C (see_Figure 15: "Test circuit for_<br>_inductive load switching and diode recovery_<br>_times"_)|-|26||ns|
|Qrr|Reverse<br>recovery<br>charge||-|21||nC|
|IRRM|Reverse<br>recovery<br>current||-|1.7||A|



## **Notes:** 

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5% 

For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [149 x 144] intentionally omitted <==**

**Figure 3: Thermal impedance** 

**==> picture [143 x 142] intentionally omitted <==**

**Figure 4: Output characteristics** 

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**Figure 5: Transfer characteristics** 

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**Figure 6: Normalized gate threshold voltage Figure 7: Normalized V(BR)DSS vs vs temperature temperature** 

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**Electrical characteristics** 

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**----- Start of picture text -----**<br>
Figure 9: Normalized on-resistance vs.<br>Figure 8: Static drain-source on-resistance<br>temperature<br>**----- End of picture text -----**<br>


**==> picture [394 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Gate charge vs gate-source<br>Figure 11: Capacitance variations voltage<br>voltage<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13: Switching times test circuit for Figure 14: Gate charge test circuit resistive load** 

**==> picture [163 x 83] intentionally omitted <==**

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**Figure 15: Test circuit for inductive load switching and diode recovery times** 

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**Package mechanical** data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 PowerFLAT™ 5x6 type R package information** 

**Figure 16: PowerFLAT™ 5x6 type R package outline** 

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**Package mechanical** data 

**Table 8: PowerFLAT™ 5x6 type R mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|D|5.00|5.20|5.40|
|E|5.95|6.15|6.35|
|D2|4.11||4.31|
|e||1.27||
|L|0.60||0.80|
|K|1.275||1.575|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|



**Figure 17: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)** 

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**Package mechanical** data 

## **4.2 PowerFLAT™ 5x6 packing information** 

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**----- Start of picture text -----**<br>
Figure 18: PowerFLAT™ 5x6 tape (dimensions are in mm)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
P 2 P 0<br>(0.30T ±0.05) Do 2.0±0.1 (I) 4.0±0.1 (II) E1<br>Ø1.55±0.05 Y 1.75±0.1<br>D1<br>Ø1.5 MIN.<br>CL<br>Y<br>P1(8.00±0.1) Ao(6.30±0.1)<br>Ko (1.20±0.1)<br>SECTION Y-Y<br>(I) Measured from centerline of sprocket hole Base and bulk quantity 3000 pcs<br>to centerline of pocket.<br>(II) Cumulative tolerance of 10 sprocket<br>holes is ± 0.20 .<br>(III)Measured from centerline of sprocket<br>hole to centerline of pocket.<br>8234350_Tape_rev_C<br>REF.R0.50<br>REF 0.20<br>)<br>III )<br>)((F5.50±0.1 (W12.00±0.3<br>5.30±0.1)(Bo<br>**----- End of picture text -----**<br>


**Figure 19: PowerFLAT™ 5x6 package orientation in carrier tape** 

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**Package mechanical** data 

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**----- Start of picture text -----**<br>
Figure 20: PowerFLAT™ 5x6 reel<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-Jan-2014|1|Initial release.|
|24-Mar-2015|2|Text edits throughout document<br>On cover page, updated title, description and features table<br>Renamed and updated Table 4: Static<br>Updated Table 5: Dynamic<br>Updated Table 6: Switching times<br>Updated Table 7: Source-drain diode<br>Added Section 2.1: Electrical characteristics (curves)<br>Renamed and updated Section 4.1 PowerFLAT™ 5x6 type R<br>package information<br>Renamed and updated Section 5 Packing information|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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