# Dual MOSFET, N Channel, 30 V, 30 V, 40 A, 40 A, 0.016 ohm

![Product image](https://novapart.co/image/farnell:2098405/)

**URL**: https://novapart.co/products/STL40DN3LLH5/dual-mosfet-n-channel-30-v-40-a-0016-ohm
**SKU**: STL40DN3LLH5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.4330
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | PowerFLAT |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 60W |
| Power Dissipation P Channel | 60W |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | 30V |
| Continuous Drain Current Id N Channel | 40A |
| Continuous Drain Current Id P Channel | 40A |
| Drain Source On State Resistance N Channel | 0.016ohm |
| Drain Source On State Resistance P Channel | 0.016ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098405/)

## **STL40DN3LLH5** 

Automotive-grade dual N-channel 30 V, 0.016 Ω typ., 40 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 DI package 

**Datasheet** - **production data** 

## **Features** 

|AEC-Q101 qualified<br>Low on-resistance<br>**Order code**<br>**VDS**<br>STL40DN3LLH5<br>30 V|**RDS(on)max.**<br>0.018Ω<br>os|**ID**<br>40 A|
|---|---|---|



- AEC-Q101 qualified 

- Low on-resistance 

- High avalanche ruggedness 

- Low gate drive power loss 

- Wettable flank package 

## **Figure 1. Internal schematic diagram** 

## **Applications** 

- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. 

**Table 1. Device summary** 

|**Order code**|**Marking**||**Package**|**Packing**||
|---|---|---|---|---|---|
|STL40DN3LLH5|40DN3LH5||PowerFLAT™ 5x6<br>double island|Tape and reel||
|October 2016|DocID18416 Rev 7||DocID18416 Rev 7||1/16|



This is information on a product in full production. 

_www.st.com_ 

October 2016 DocID18416 Rev 7 

**Contents** 

**STL40DN3LLH5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>PowerFLAT 5x6 double island WF type R  . . . . . . . . . . . . . . . . . . . . . . . . 10|
|**5**|**Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|± 22|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|40|A|
|ID<br>(1)|Drain current (continuous) at TC= 100 °C|28|A|
|ID<br>(2)|Drain current (continuous) at Tpcb= 25 °C|11|A|
|ID<br>(2)|Drain current (continuous) at Tpcb=100°C|7|A|
|IDM<br>(2)(3)|Drain current (pulsed)|44|A|
|IDM<br>(1)(3)|Drain current (pulsed)|160|A|
|PTOT<br>(1)|Total dissipation at TC= 25°C|50|W|
|PTOT<br>(2)|Total dissipation at Tpcb= 25°C|4.7|W|
|TJ|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



1. The value is rated according Rthj-c 

2. The value is rated according Rthj-pcb 

3. Pulse width limited by safe operating area 

**Table 3. Thermal resistance** 

||**Table 3. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case|3.0|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb|32|°C/W|



1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250 µA, VGS= 0 V|30|||V|
|IDSS|Zero gate voltage drain<br>current|VDS= 30 V, VGS= 0 V|||1|µA|
|||VDS= 30 V, VGS= 0 V,<br>TJ=125 °C(1)|||10|µA|
|IGSS|Gate body leakage current|VGS= ± 22 V, VDS= 0 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|1.5||V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 5.5 A||0.016|0.018|Ω|
|||VGS= 4.5 V, ID= 5.5 A||0.02|0.025|Ω|



1. Defined by design, not subject to production test 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|475|-|pF|
|Coss|Output capacitance||-|97|-|pF|
|Crss|Reverse transfer<br>capacitance||-|19|-|pF|
|Qg|Total gate charge|VDD= 15 V, ID= 11 A<br>VGS= 4.5 V<br>_(seeFigure 13)_|-|4.5|-|nC|
|Qgs|Gate-source charge||-|1.7|-|nC|
|Qgd|Gate-drain charge||-|1.9|-|nC|



**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 15 V, ID= 11 A,<br>RG= 4.7Ω,VGS= 10 V<br>_(seeFigure 12)_|-|4|-|ns|
|tr|Rise time||-|22|-|ns|
|td(off)|Turn-off delay time||-|13|-|ns|
|tf|Fall time||-|2.8|-|ns|



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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>(1)|Forward on voltage|ISD= 11 A, VGS= 0 V|-||1.1|V|
|trr|Reverse recovery time|ISD= 11 A,<br>di/dt = 100 A/µs,<br>VDD= 25 V, Tj =150 °C|-|16.2||ns|
|Qrr|Reverse recovery charge||-|1||nC|
|IRRM|Reverse recovery current||-|8.1||A|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [462 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Safe operating area Figure 3. Thermal impedance<br>ID AM14982v1 K<br>(A)<br>δ=0.5<br>0.2<br>100 Operation in this area<br>0.1<br>is limited by RDS(on)<br>10-1 0.1<br>0.05<br>10ms 0.02<br>10<br>Single pulse<br>100ms<br>Tj=175°C<br>Tc=25°C 1s<br>10.1 1 Single pulse 10 VDS(V) 1010-2 -5 10-4 10-3 10-2 10-1 tp [(s)]<br>Figure 4. Output characteristics Figure 5. Transfer characteristics<br>AM14983v1 AM14984v1<br>ID (A) ID (A)<br>VGS=10V<br>70 35<br>VDS=4V<br>60 5V 30<br>50 25<br>40 4V 20<br>30 15<br>20 10<br>3V<br>10 5<br>0 0<br>0 1 2 3 4 VDS(V) 2 3 4 VGS(V)<br>**----- End of picture text -----**<br>


**==> picture [462 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Normalized V(BR)DSS vs temperature Figure 7. Static drain-source on-resistance<br>V(BR)DSS AM14985v1 RDS(on) AM14986v1<br>(norm) ID=250µA (mΩ)<br>1.10<br>15<br>1.05<br>VGS=10V<br>1.00 10<br>0.95<br>5<br>0.90<br>0.85 0<br>-50 -25 0 25 50 75 100 125 150 TJ(°C) 0 5 10 15 20 25 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [462 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations<br>VGS AM14987v1 C (pF) AM14988v1<br>(V)<br>VDD=15V 810<br>12<br>ID=11A<br>710<br>10<br>610<br>8 510 Ciss<br>6 410<br>310<br>4<br>210<br>2 Coss<br>110<br>Crss<br>0 10<br>0 1 2 3 4 5 6 7 Qg(nC) 0 10 20 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [462 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. Normalized gate threshold voltage vs  Figure 11. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM14989v1 RDS(on) AM14990v1<br>(norm) ID=250µA (norm)<br>1.2 VGS=10V<br>1.8<br>ID=5.5A<br>1.1<br>1.6<br>1.0<br>1.4<br>0.9<br>1.2<br>0.8<br>1.0<br>0.7<br>0.8<br>0.6<br>0.5 0.6<br>0.4 0.4<br>-50 -25 0 25 50 75 100 125 150 TJ(°C) -50 -25 0 25 50 75 100 125 150 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [462 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. witching times test circuit for  Figure 13. Gate charge test circuit<br>resistive load VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3 IG=CONST<br>μF μF VDD Vi=20V=VGMAX 100Ω D.U.T.<br>VD 2200<br>VGS μF 2.7kΩ VG<br>RG D.U.T.<br>47kΩ<br>PW<br>1kΩ<br>PW<br>AM01469v1<br>AM01468v1<br>**----- End of picture text -----**<br>


**Figure 14. est circuit for inductive load Figure 15. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [454 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D VD 2200 3.3<br>G D.U.T. FASTDIODE L=100μH μF μF VDD<br>S B 3.3 1000 ID<br>25 Ω B B D μF μF VDD<br>G<br>Vi D.U.T.<br>RG S<br>Pw<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform** 

**==> picture [459 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 PowerFLAT 5x6 double island WF type R** 

## **Figure 18. PowerFLAT 5x6 double island WF type R outline** 

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**Package information** 

**Table 8. PowerFLAT 5x6 double island WF type R mechanical data** 

|**Ref.**|**Dimensions (mm)**|**Dimensions (mm)**|**Dimensions (mm)**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.20|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.10|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|e||1.27||
|E|6.20|6.40|6.60|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.85|1.00|1.15|
|E8|0.55|1.00|0.75|
|E9|4.00|4.20|4.40|
|E10|3.55|3.70|3.85|
|K|1.275||1.575|
|L|0.725|0.825|0.925|
|L1|0.175|0.275|0.375|
|θ|0°||12°|



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**Package information** 

**Figure 19. PowerFLAT™ 5x6 double island recommended footprint (dimensions are in mm)** 

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**Packing information** 

## **5 Packing information** 

## **Figure 20. PowerFLAT™ 5x6 WF tape** 

## **Figure 21. PowerFLAT™ 5x6 package orientation in carrier tape** 

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**Packing information** 

**Figure 22. PowerFLAT™ 5x6 reel** 

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**STL40DN3LLH5** 

**Revision history** 

## **6 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Jan-2011|1|First release.|
|03-Oct-2012|2|Section 2.1: Electrical characteristics (curves) has been added.<br>Document status promoted from preliminary data to datasheet.<br>Minor text changes.|
|14-Dec-2012|3|Modified the Applications section on the coverpage to “Automotive<br>switching applications”.|
|23-Feb-2015|4|Updated Section 4: Package mechanical data and added Section 5:<br>Packing information.<br>Updated title and features in cover page.<br>Minor text changes.|
|27-Oct-2015|5|Updated title and features in cover page.<br>Updated_Table 2, Table 3, Table 4 and Table 7._<br>Updated_Section 4: Package information_<br>Minor text changes.|
|11-Mar-2016|6|Updated silhoette in cover page.<br>Updated_Table 1: Device summary, Table 2: Absolute maximum_<br>r_atings, Table 3: Thermal resistance and Table 4: On/off states_.<br>Updated_Figure 2: Safe operating area_.<br>Updated_Section 4.1: PowerFLAT 5x6 double island WF type R_<br>Updated_Section 5: Packing information._<br>Minor text changes.|
|7-Oct-2016|7|Updated marking and_Section 4.1: PowerFLAT 5x6 double island_<br>_WF type R_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl40dn3llh5/mosfet-nn-ch-30v-40a-powerflat/dp/2098405)
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