# Dual MOSFET, N Channel, 60 V, 60 V, 33 A, 33 A, 0.027 ohm

![Product image](https://novapart.co/image/farnell:3132771RL/)

**URL**: https://novapart.co/products/STL36DN6F7/dual-mosfet-n-channel-60-v-33-a-0027-ohm
**SKU**: STL36DN6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2970
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 Series |
| Qualification | - |
| Transistor Case Style | PowerFLAT |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 58W |
| Power Dissipation P Channel | 58W |
| Drain Source Voltage Vds N Channel | 60V |
| Drain Source Voltage Vds P Channel | 60V |
| Continuous Drain Current Id N Channel | 33A |
| Continuous Drain Current Id P Channel | 33A |
| Drain Source On State Resistance N Channel | 0.027ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132771RL/)

## **STL36DN6F7** 

Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STL36DN6F7|60 V|27 mΩ|33 A|



- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

## **Applications** 

- Switching applications 

## **Description** 

**Figure 1: Internal schematic diagram** 

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STL36DN6F7|36DN6F7|PowerFLAT™ 5x6 double island|Tape and reel|



This is information on a product in full production. 

_www.st.com_ 

May 2017 

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|**Contents**<br>**STL36DN6F7**|**Contents**<br>**STL36DN6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 5|
|**3**|**Test circuits ..................................................................................... 7**|
|**4**|**Package information ....................................................................... 8**|
||4.1<br>PowerFLAT 5x6 double island type C package information .............. 9|
||4.2<br>Packing information ......................................................................... 12|
|**5**|**Revision history ............................................................................ 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|±20|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|33|A|
|ID_(1)_|Drain current (continuous) at TC= 100 °C|23|A|
|ID_(2)_|Drain current (continuous) at Tpcb= 25 °C|9|A|
|ID_(2)_|Drain current (continuous) at Tpcb=100°C|6.7|A|
|IDM_(1)(3)_|Drain current (pulsed)|132|A|
|IDM_(2)(3)_|Drain current (pulsed)|36|A|
|PTOT_(1)_|Total dissipation at TC= 25 °C|58|W|
|PTOT_(2)_|Total dissipation at Tpcb= 25°C|4.8|W|
|TJ|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



## **Notes:** 

- (1)This value is rated according to Rthj-c. 

(2)The value is rated according to Rthj-pcb. 

(3)Pulse width limited by safe operating area. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction- case|2.6|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb|31.3|°C/W|



## **Notes:** 

(1)When mounted on FR-4 board of 1 inch2, 2oz Cu, t < 10 s. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|60|||V|
|IDSS|Zero gate voltage drain<br>current|VDS= 60 V, VGS= 0 V|||1|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0 V ,VGS= 20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 4.5 A||23|27|mΩ|



## **Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 30 V, f = 1 MHz,<br>VGS= 0 V|-|420|-|pF|
|Coss|Output capacitance||-|215|-|pF|
|Crss|Reverse transfer capacitance||-|16|-|pF|
|Qg|Totalgate charge|VDD= 30 V, ID= 9 A<br>VGS= 0 to 10 V<br>(see_Figure 14: "Test circuit_<br>_for gate charge behavior"_)|-|8|-|nC|
|Qgs|Gate-source charge||-|2.3|-|nC|
|Qgd|Gate-drain charge||-|2.1|-|nC|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 30 V, ID= 4.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Test circuit_<br>_for resistive load switching_<br>_times"_and_Figure 18:_<br>_"Switching time waveform"_)|-|7.85|-|ns|
|tr|Rise time||-|3.25|-|ns|
|td(off)|Turn-off delaytime||-|12.1|-|ns|
|tf|Fall time||-|3.95|-|ns|



**Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD_(1)_|Forward on voltage|ISD= 9 A, VGS= 0 V|-||1.2|V|
|trr|Reverse recovery time|ID= 9 A, di/dt = 100 A/µs<br>VDD= 48 V<br>(see_Figure 15: "Test circuit_<br>_for inductive load switching_<br>_and diode recovery times"_)|-|17.1||ns|
|Qrr|Reverse recoverycharge||-|6.67||nC|
|IRRM|Reverse recovery current||-|0.8||A|



## **Notes:** 

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [184 x 154] intentionally omitted <==**

**Figure 3: Thermal impedance** 

**==> picture [164 x 158] intentionally omitted <==**

**Figure 4: Output characteristics** 

**==> picture [175 x 159] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [177 x 161] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [170 x 150] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

**==> picture [171 x 151] intentionally omitted <==**

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**STL36DN6F7 TL36DN6F7 36DN6F7 DN6F7 6F7 F7** 

**==> picture [474 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Electrical characteristics STL36DN6F7 TL36DN6F7 36DN6F7 DN6F7 6F7 F7<br>Figure 8: Capacitance variations  Figure 9: Normalized gate threshold voltage vs<br>temperature<br>**----- End of picture text -----**<br>


**Figure 10: Normalized on-resistance vs temperature** 

**==> picture [186 x 160] intentionally omitted <==**

**Figure 11: Normalized V(BR)DSS vs temperature** 

**==> picture [194 x 163] intentionally omitted <==**

**Figure 12: Source-drain diode forward characteristics** 

**==> picture [175 x 159] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 375] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load  Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>**----- End of picture text -----**<br>


**==> picture [403 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 PowerFLAT 5x6 double island type C package information** 

**Figure 19: PowerFLAT™ 5x6 double island type C package outline** 

**==> picture [406 x 537] intentionally omitted <==**

**----- Start of picture text -----**<br>
8256945_DI_typeC_16<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 8: PowerFLAT™ 5x6 double island type C mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.20|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.20|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|D7|1.68||1.98|
|e||1.27||
|E|5.95|6.15|6.35|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.75|0.90|1.05|
|E8|0.55||0.75|
|K|1.05||1.35|
|L|0.725||1.025|
|L1|0.05|0.15|0.25|
|θ|0°||12°|



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**Package information** 

**Figure 20: PowerFLAT™ 5x6 double island recommended footprint (dimensions are in mm)** 

**==> picture [406 x 444] intentionally omitted <==**

**----- Start of picture text -----**<br>
8256945_DI_FP_smp_16<br>**----- End of picture text -----**<br>


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**Package information** 

## **4.2 Packing information** 

**==> picture [250 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm)<br>**----- End of picture text -----**<br>


**==> picture [406 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
(I)   Measured from centreline of sprocket hole<br>      to centreline of pocket. Base and bulk quantity 3000 pcs<br>All dimensions are in millimeters<br>(II)  Cumulative tolerance of 10 sprocket<br>      holes is ±0.20.<br>(III) Measured from centreline of sprocket<br>      hole to centreline of pocket<br>8234350_Tape_rev_C<br>**----- End of picture text -----**<br>


**Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape** 

**==> picture [407 x 153] intentionally omitted <==**

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**Package information** 

**==> picture [144 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23: PowerFLAT™ 5x6 reel<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Aug-2015|1|First release.|
|22-Oct-2015|2|Document status promoted from preliminary to production data.<br>Updated_Section 2: "Electrical ratings"_and_Section 3: "Electrical_<br>_characteristics"._<br>Added_Section 3.1: "Electrical characteristics (curves)"_.|
|10-May-2017|3|Modified title and features table on cover page.<br>Modified_Table 2: "Absolute maximum ratings"_,_Table 3: "Thermal_<br>_data"_,_Table 4: "On /off states"_<br>Modified_Figure 4: "Output characteristics"_,_Figure 5: "Transfer_<br>_characteristics"_,_Figure 7: "Static drain-source on-resistance"_and<br>_Figure 12: "Source-drain diode forward characteristics"_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STL36DN6F7/dual-mosfet-n-channel-60-v-33-a-0027-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stl36dn6f7/mosfet-dual-n-ch-60v-33a-58w/dp/3132771RL)
---

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