# Power MOSFET, N Channel, 40 V, 373 A, 550 µohm, PowerFLAT 5x6, Surface Mount

![Product image](https://novapart.co/image/farnell:4067501/)

**URL**: https://novapart.co/products/STL325N4LF8AG/power-mosfet-n-channel-40-v-373-a-550-ohm
**SKU**: STL325N4LF8AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 188W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT 5x6 |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 373A |
| Drain Source On State Resistance | 550µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4067501/)

**STL325N4LF8AG** 

Datasheet 

‑ Automotive N channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 

## **Features** 

**Order code VDS RDS(on) max. ID** STL325N4LF8AG 40 V 0.75 mΩ 373 A 4 3 NU 2 ~~ee~~ eee 1 • AEC-Q101 qualified re **PowerFLAT 5x6** • MSL1 grade 

- 175 °C operating temperature 

- 100% avalanche tested 

**==> picture [152 x 112] intentionally omitted <==**

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D(5, 6, 7, 8) 8 7 6 5<br>G(4)<br>1 2 3 4<br>S(1, 2, 3) Top View<br>AM15540v2<br>**----- End of picture text -----**<br>


- Wettable flank package 

## **Applications** 

- Switching applications 

## **Description** 

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. 

It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. 

## **Product status link** ~~Po~~ STL325N4LF8AG 

|**Product summary**<br>~~Po~~|**Product summary**<br>~~Po~~|
|---|---|
|**Order code**|STL325N4LF8AG|
|**Marking**|325N4LF8|
|**Package**|PowerFLAT 5x6|
|**Packing**|Tape and reel|



**DS13900** - **Rev 1** - **April 2022** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STL325N4LF8AG Electrical ratings** 

## **1 Electrical ratings** 

**Table 1. Absolute maximum ratings (at Tc = 25 °C unless otherwise specified)** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|40|V|
|VGS|Gate-source voltage|±16|V|
|ID (1)|Drain current (continuous) at TC= 25 °C|373|A|
||Drain current (continuous) at TC= 100 °C|264||
|IDM(1)(2)(3)|Drain current (pulsed), tP= 10 µs|1492|A|
|PTOT|Total power dissipation at TC= 25 °C|188|W|
|IAS|Single pulse avalanche current (pulse width limited by TJmax.)|60|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= 60 A, RGmin= 25 Ω)|590|mJ|
|Tj|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



_1. The value is relevant to RthJC. Current limitations will come from the operative conditions, such as temperature and thermal resistance of the PCB._ 

_2. Specified by design and evaluated by characterization, not tested in production._ 

_3. Pulse width is limited by safe operating area._ 

**Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJA(1)|Thermal resistance, junction-to-ambient (on 2s2p FR-4 board vertical in still area)|20|°C/W|
|RthJC|Thermal resistance, junction-to-case|0.8|°C/W|



_1. Defined according to JEDEC standards (JESD51-5, -7)._ 

**DS13900** - **Rev 1** 

**page 2/15** 

**STL325N4LF8AG Electrical characteristics** 

## **2 Electrical characteristics** 

TJ = 25 °C unless otherwise specified. 

## **Table 3. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|40|||V|
|IDSS|Zero gate voltage drain current|VDS= 40 V, VGS= 0 V|||1|µA|
|||VDS= 40 V, VGS= 0 V,<br>TJ= 125°C(1)|||100||
|IGSS|Gate-body leakage current|VGS= 20 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|1.2||2.0|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 60 A||0.55|0.75|mΩ|
|||VGS= 4.5 V, ID= 60 A||0.85|1.1||



_1. Specified by design and evaluated by characterization, not tested in production._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss (1)|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|7657|-|pF|
|Coss (1)|Output capacitance||-|1968|-|pF|
|Crss (1)|Reverse transfer capacitance||-|50|-|pF|
|Qg (1)|Total gate charge|VDD= 20 V, ID= 120 A, VGS= 0 to 4.5 V|-|39|-|nC|
|||VDD= 20 V, ID= 120 A, VGS= 0 to 10 V|-|95|-||
|Qgs (1)|Gate-source charge|VDD= 20 V, ID= 120 A, VGS= 0 to 4.5 V|-|23|-|nC|
|Qgd (1)|Gate-drain charge||-|6|-|nC|



_1. Specified by design and evaluated by characterization, not tested in production._ 

**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on) (1)|Turn-on delay time|VDD= 20 V, ID= 60 A,<br>RG= 4.7 Ω, VGS= 10 V|-|12.5|-|ns|
|tr (1)|Rise time||-|6.5|-|ns|
|td(off) (1)|Turn-off delay time||-|89|-|ns|
|tf (1)|Fall time||-|21|-|ns|



_1. Specified by design and evaluated by characterization, not tested in production._ 

**DS13900** - **Rev 1** 

**page 3/15** 

**STL325N4LF8AG Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD(1) (2)|Forward on current<br>(continuous)|TC= 25 °C|-||135|A|
|VSD|Forward on voltage|ISD= 60 A, VGS= 0 V|-||1.1|V|
|trr (1)|Reverse recovery time|ID= 60 A, di/dt = 100 A/µs, VDD= 32 V|-|60.1||ns|
|Qrr (1)|Reverse recovery charge||-|74.4||nC|
|IRRM (1)|Reverse recovery current||-|2.5||A|



_1. Specified by design and evaluated by characterization, not tested in production._ 

_2. The value is relevant to RthJC. Current limitations will come from the operating conditions, such as temperature and thermal resistance of the PCB._ 

**DS13900** - **Rev 1** 

**page 4/15** 

**STL325N4LF8AG Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Total power dissipation Figure 2. Drain current vs case temperature<br>PTot GADG260120221401TPD ID GADG070320221054DTC<br>(W)  (A)<br>350<br>Silicon limited<br>200<br>300<br>250<br>150<br>200<br>100<br>150<br>100<br>50<br>50<br>0 0<br>0 50 100 150 TC(°C) 0 50 100 150 TC (°C)<br>**----- End of picture text -----**<br>


**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Safe operating area Figure 4. Normalized transient thermal impedance<br>ID GADG260120221503SOA K  GADG070320221055ZTH<br>(A) δ<br>10 [3] tp =1 µs 0.2<br>10 [2] tp =10 µs 10 [-1] 0.1<br>0.05<br>10 [1] tp = 100 µs 0.02<br>10 [0] tp = 1 ms 10 [-2] 0.01<br>tp = 10 ms Single pulse Z δ = tth = k*Rp / Ƭ thJC<br>10 [-1] TJ ≤ 175 ⁰C tp = 100 ms<br>10 [-2] T Single pulse C = 25 ⁰C 10 [-3] tp  Ƭ<br>10 [-1] 10 [0] 10 [1] VDS (V) 10  [-6] 10  [-5] 10  [-4] 10  [-3] 10  [-2] 10  [-1] 10  [0] tp (s)<br>DS(on)<br>Operation in this area is<br>limited by R<br>**----- End of picture text -----**<br>


## **Figure 5. Typical output characteristics** 

**==> picture [187 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GADG260120221505OCH<br> (A) VGS = 4-10 V<br>3 V<br>120<br>2.75 V<br>80<br>40<br>2.5 V<br>0<br>0 1 2 3 VDS (V)<br>**----- End of picture text -----**<br>


**Figure 6. Typical transfer characteristics** 

**==> picture [187 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID GADG260120221606TCH<br> (A)<br>400<br>VDS = 5 V<br>300<br>TJ = 175 °C<br>200<br>100<br>25 °C -55 °C<br>0<br>1.5 2 2.5 3 3.5 VGS (V)<br>**----- End of picture text -----**<br>


**DS13900** - **Rev 1** 

**page 5/15** 

**STL325N4LF8AG Electrical characteristics (curves)** 

**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Typical drain-source on-resistance Figure 8. Typical on-resistance vs gate-source voltage<br>RDS(on) GADG260120221607RID RDS(on) GADG260120221608RON<br>(mΩ) (mΩ)<br>VGS = 4.5 V 4<br>0.9 ID = 60 A<br>3<br>0.7<br>VGS = 10 V 2<br>TJ = 175 °C<br>0.5<br>1<br>0.3 0 TJ = 25 °C<br>0 40 80 120 ID (A) 0 2 4 6 8 10 VGS (V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 415] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Typical gate charge characteristics Figure 10. Typical capacitance characteristics<br>VGS GADG140420221142QVG C  GADG260120221710CVR<br> (V) (pF)<br>12 f = 1 MHz<br>ID = 120 A<br>10  [4]<br>10 VDS = 8 V CISS<br>8 VDS = 20 V 10  [3] COSS<br>6<br>VDS = 32 V<br>4<br>10  [2]<br>2 CRSS<br>0 10  [1]<br>0 20 40 60 80 100 120 Qg (nC) 0 10 20 30 40 VDS (V)<br>Figure 11. Avalanche characteristics Figure 12. Avalanche energy<br>IAV GADG260120221712OCH EAS GADG270120221113EAS<br> (A)  (mJ)<br>TJ = 25 °C 3000<br>10  [1] 2000<br>100 °C<br>15 A<br>150 °C 1000<br>30 A<br>60 A<br>10  [0] 0<br>10  [0] 10  [1] 10  [2] 10  [3] 10  [4] tAV (µs) 25 75 125 175 TJ(°C)<br>**----- End of picture text -----**<br>


**DS13900** - **Rev 1** 

**page 6/15** 

**STL325N4LF8AG Electrical characteristics (curves)** 

## **Figure 13. Typical reverse diode forward characteristics Figure 14. Normalized on-resistance vs temperature** 

**==> picture [441 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD GADG270120221214SDF RDS(on) GADG270120221314RON<br> (V)  (norm.)<br>2.0<br>1.0 ID = 60 A<br>1.8<br>0.9<br>TJ = -55 °C<br>1.6<br>0.8<br>TJ = 25 °C 1.4 VGS = 10 V<br>0.7<br>1.2<br>VGS = 4.5 V<br>0.6<br>1.0<br>TJ = 175 °C<br>0.5<br>0.8<br>0.4 0.6<br>10 20 30 40 50 60 ISD (A) -75 -25 25 75 125 175 TJ (°C)<br>**----- End of picture text -----**<br>


**==> picture [513 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Normalized gate threshold voltage vs Figure 16. Normalized V(BR)DSS vs temperature<br>temperature<br>VGS(th) GADG270120221315VTH V(BR)DSS GADG270120221316BDV<br>(norm.)  (norm.)<br>1.20 1.08<br>1.10 1.06<br>1.00 1.04 I D  = 1 mA<br>1.02<br>0.90<br>1.00<br>0.80 ID= 250 µA<br>0.98<br>0.70<br>0.96<br>0.60 0.94<br>0.50 0.92<br>0.90<br>0.40-75 -25 25 75 125 175 TJ (°C) -75 -25 25 75 125 175 TJ (°C)<br>**----- End of picture text -----**<br>


**DS13900** - **Rev 1** 

**page 7/15** 

**STL325N4LF8AG Package information** 

## **3** 

## **Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **3.1 PowerFLAT 5x6 WF type C package information** 

## **Figure 17. PowerFLAT 5x6 WF type C package outline** 

**==> picture [55 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
8231817_WF_typeC_r20<br>**----- End of picture text -----**<br>


**DS13900** - **Rev 1** 

**page 8/15** 

**STL325N4LF8AG PowerFLAT 5x6 WF type C package information** 

**Table 7. PowerFLAT 5x6 WF type C mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.00||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.10|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.10|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|e||1.27||
|E|6.20|6.40|6.60|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.85|1.00|1.15|
|E9|4.00|4.20|4.40|
|E10|3.55|3.70|3.85|
|K|1.05||1.35|
|L|0.90|1.00|1.10|
|L1|0.175|0.275|0.375|
|θ|0°||12°|



**DS13900** - **Rev 1** 

**page 9/15** 

**STL325N4LF8AG PowerFLAT 5x6 packing information** 

**Figure 18. PowerFLAT 5x6 recommended footprint (dimensions are in mm)** 

**==> picture [187 x 168] intentionally omitted <==**

8231817_FOOTPRINT_rev20 

## **3.2 PowerFLAT 5x6 packing information** 

**Figure 19. PowerFLAT 5x6 tape (dimensions are in mm)** 

(I)   Measured from centreline of sprocket hole to centreline of pocket. Base and bulk quantity 3000 pcs All dimensions are in millimeters (II)  Cumulative tolerance of 10 sprocket holes is ±0.20. (III) Measured from centreline of sprocket hole to centreline of pocket 

8234350_Tape_rev_C 

**DS13900** - **Rev 1** 

**page 10/15** 

**STL325N4LF8AG PowerFLAT 5x6 packing information** 

**Figure 20. PowerFLAT 5x6 package orientation in carrier tape** 

**==> picture [36 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin 1<br>identification<br>**----- End of picture text -----**<br>


**Figure 21. PowerFLAT 5x6 reel** 

**DS13900** - **Rev 1** 

**page 11/15** 

**STL325N4LF8AG PowerFLAT 5x6 marking information** 

## **3.3 PowerFLAT 5x6 marking information** 

**Figure 22. PowerFLAT 5x6 marking information** 

**==> picture [163 x 144] intentionally omitted <==**

**==> picture [102 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
Special function digit<br>E: engineering sample<br><blank>: commercial sample<br>**----- End of picture text -----**<br>


_Note: Engineering Samples: these samples can be clearly identified by a dedicated special symbol in the marking of each unit. These samples are intended to be used for electrical compatibility evaluation only; usage for any other purpose may be agreed only upon written authorization by ST. ST is not liable for any customer usage in production and/or in reliability qualification trials._ 

Commercial Samples: fully qualified parts from ST standard production with no usage restrictions. 

**DS13900** - **Rev 1** 

**page 12/15** 

**STL325N4LF8AG** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|27-Apr-2022|1|Initial release.|



**DS13900** - **Rev 1** 

**page 13/15** 

**STL325N4LF8AG Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**3.1**<br>[Package name] package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**3.2**<br>PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**3.3**<br>PowerFLAT 5x6 marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13**||
|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**||



**DS13900** - **Rev 1** 

**page 14/15** 

**STL325N4LF8AG** 

## **IMPORTANT NOTICE – READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2022 STMicroelectronics – All rights reserved 

**DS13900** - **Rev 1** 

**page 15/15** 



## Links

- [View this product on Novapart](https://novapart.co/products/STL325N4LF8AG/power-mosfet-n-channel-40-v-373-a-550-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stl325n4lf8ag/mosfet-n-ch-10v-373a-powerflat/dp/4067501)
---

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