# Power MOSFET, N Channel, 60 V, 100 A, 4600 µohm, PowerFLAT, Surface Mount
**URL**: https://novapart.co/products/STL20N6F7/power-mosfet-n-channel-60-v-100-a-4600-ohm
**SKU**: STL20N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3770
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 78W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 4600µohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3132750/)
## **STL20N6F7**
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
**Features Order code VDS RDS(on) max ID** STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 • Among the lowest RDS(on) on the market 4 • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness **PowerFLAT™ 3.3x3.3 HV Applications** ~~oo~~ • Switching applications **Figure 1: Internal schematic diagram Description** D(5, 6, 7, 8) This N-channel Power MOSFET utilizes 8 7 6 5 STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(4) S(1, 2, 3) 1 2 3 4 AM15810v1 **Table 1: Device summary Order code Marking Package Packing** ~~py~~ STL20N6F7 20N6F PowerFLAT™ 3.3x3.3 Tape and reel
This is information on a product in full production.
June 2015
DocID027433 Rev 3
1/13
_www.st.com_
|**Contents**
**STL20N6F7**|**Contents**
**STL20N6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics .................................................................... 5|
|**3**|**Test circuits ..................................................................................... 7**|
|**4**|**Package mechanical data ............................................................... 8**|
||4.1
PowerFLAT 3.3x3.3 package information ......................................... 9|
|**5**|**Revision history ............................................................................ 12**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|± 20|V|
|ID
_(1)_|Drain current (continuous) at TC= 25 °C|100|A|
|ID
_(1)_|Drain current (continuous) at TC= 100 °C|61|A|
|IDM
_(1)(2)_|Drain current (pulsed)|400|A|
|ID
_(3)_|Drain current (continuous) at Tpcb= 25 °C|20|A|
|ID
_(3)_|Drain current (continuous) at Tpcb= 100 °C|12|A|
|IDM
_(2)(3)_|Drain current (pulsed)|80|A|
|PTOT
_(1)_|Total dissipation at TC= 25 °C|78|W|
|PTOT
_(3)_|Total dissipation at Tpcb= 25 °C|3|W|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|||
## **Notes:**
- (1) This value is rated according to Rthj-c.
- (2) Pulse width limited by safe operating area.
- (3) This value is rated according to Rthj-pcb.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb
_(1)_|Thermal resistancejunction-pcb max.|42.8|°C/W|
|Rthj-case|Thermal resistancejunction-case max.|1.6|°C/W|
## **Notes:**
- (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec.
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**STL20N6F7**
**Electrical characteristics**
## **2 Electrical characteristics**
(TC = 25 °C unless otherwise specified)
**Table 4: On /off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source
breakdown voltage|ID= 1 mA, VGS= 0 V|60|||V|
|IDSS|Zero gate voltage
drain current|VGS= 0 V
VDS= 60 V|||1|µA|
|IGSS|Gate-body leakage
current|VGS= 20 V, VDS= 0|||100|nA|
|VGS(th)|Gate threshold
voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 10 A||0.0046|0.0054|Ω|
## **Table 5: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,
VGS= 0 V|-|1600|-|pF|
|Coss|Output capacitance||-|880|-|pF|
|Crss|Reverse transfer
capacitance||-|66|-|pF|
|Qg|Totalgate charge|VDD= 30 V, ID= 20 A,
VGS= 10 V|-|25|-|nC|
|Qgs|Gate-source charge||-|7.2|-|nC|
|Qgd|Gate-drain charge||-|8.1|-|nC|
|||**Table 6: Switching times**|||||
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delaytime|VDD= 30 V, ID= 10 A,
RG= 4.7 Ω, VGS= 10 V|-|15|-|ns|
|tr|Rise time||-|17.6|-|ns|
|td(off)|Turn-off delaytime||-|24.4|-|ns|
|tf|Fall time||-|7.8|-|ns|
## **Table 7: Source-drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD
_(1)_|Forward on voltage|ISD= 20 A, VGS= 0|-||1.2|V|
|trr|Reverse recovery
time|ID= 20 A,
di/dt = 100 A/µs
VDD= 48 V|-|39.6||ns|
|Qrr|Reverse recovery
charge||-|36||nC|
|IRRM|Reverse recovery
current||-|1.8||A|
## **Notes:**
> (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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**Electrical characteristics**
## **2.1 Electrical characteristics**
**Figure 2: Safe operating area**
**==> picture [156 x 144] intentionally omitted <==**
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**----- Start of picture text -----**
Figure 3: Thermal impedance
**----- End of picture text -----**
**==> picture [145 x 144] intentionally omitted <==**
**Figure 4: Output characteristics**
**==> picture [156 x 143] intentionally omitted <==**
**Figure 5: Transfer characteristics**
**==> picture [157 x 143] intentionally omitted <==**
**Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance**
**==> picture [148 x 143] intentionally omitted <==**
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**Electrical characteristics**
**==> picture [416 x 376] intentionally omitted <==**
**----- Start of picture text -----**
Figure 9: Normalized gate threshold voltage
Figure 8: Capacitance variations
vs temperature
Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs
temperature temperature
**----- End of picture text -----**
**Figure 12: Source-drain diode forward characteristics**
**==> picture [157 x 143] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**Figure 13: Switching times test circuit for resistive load**
**Figure 14: Gate charge test circuit**
**==> picture [442 x 153] intentionally omitted <==**
**Figure 15: Test circuit for inductive load switching and diode recovery times**
**Figure 16: Unclamped inductive load test circuit**
**Figure 17: Unclamped inductive waveform**
**==> picture [62 x 33] intentionally omitted <==**
**Figure 18: Switching time waveform**
**==> picture [87 x 119] intentionally omitted <==**
**==> picture [92 x 160] intentionally omitted <==**
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**Package mechanical** data
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package mechanical** data
## **4.1 PowerFLAT 3.3x3.3 package information**
**Figure 19: PowerFLAT™ 3.3x3.3 HV package outline**
**==> picture [406 x 574] intentionally omitted <==**
**----- Start of picture text -----**
BOTTOM VIEW
SIDE VIEW
TOP VIEW
8465286_A
**----- End of picture text -----**
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**Package mechanical** data
**Table 8: PowerFLAT™ 3.3x3.3 HV package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.70|0.80|0.90|
|b|0.25|0.30|0.39|
|c|0.14|0.15|0.20|
|D|3.10|3.30|3.50|
|D1|3.05|3.15|3.25|
|D2|2.15|2.25|2.35|
|e|0.55|0.65|0.75|
|E|3.10|3.30|3.50|
|E1|2.90|3.00|3.10|
|E2|1.60|1.70|1.80|
|H|0.25|0.40|0.55|
|K|0.65|0.75|0.85|
|L|030|0.45|0.60|
|L1|0.05|0.15|0.25|
|L2|||0.5|
|ϑ|8°|10°|12°|
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**Package mechanical** data
**Figure 20: PowerFLAT™ 3.3x3.3 HV recommended footprint**
**==> picture [406 x 347] intentionally omitted <==**
**----- Start of picture text -----**
8465286_footprint
**----- End of picture text -----**
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**Revision history**
## **5 Revision history**
**Table 9: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-Jan-2015|1|First release.|
|03-Feb-2015|2|Updated_Table 2: "Absolute maximum ratings"_|
|10-Jun-2015|3|In Section 2 Electrical characteristics:
- updated Table 5: Dynamic
- updated Table 6: Switching times
- updated Table 7: Source-drain diode
Added Section 2.1 Electrical characteristics (curves)|
12/13
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**STL20N6F7**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
DocID027433 Rev 3
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## Links
- [View this product on Novapart](https://novapart.co/products/STL20N6F7/power-mosfet-n-channel-60-v-100-a-4600-ohm)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl20n6f7/mosfet-n-ch-60v-100a-150deg-c/dp/3132750)
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