# Power MOSFET, N Channel, 600 V, 11 A, 0.255 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3527139/)

**URL**: https://novapart.co/products/STL19N60M6/power-mosfet-n-channel-600-v-11-a-0255-ohm
**SKU**: STL19N60M6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5300
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M6 |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.255ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3527139/)

**STL19N60M6** 

Datasheet 

N-channel 600 V, 255 mΩ typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package 

## **Features** 

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5<br>4<br>3<br>2<br>1<br>**----- End of picture text -----**<br>


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|||||
|---|---|---|---|
|Order code|VDS|RDS(on) max.|ID|
|STL19N60M6|600 V|308 mΩ|11 A|
|•|Reduced switching losses|
|•|Lower RDS(on) per area vs previous generation|

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- Low gate input resistance 

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PowerFLAT 8x8 HV<br>**----- End of picture text -----**<br>


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Drain(5)<br>Gate(1)<br>Driver Power<br>source (2) source (3, 4)<br>NG1DS2PS34D5Z<br>**----- End of picture text -----**<br>


- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

- LLC converters 

- Boost PFC converters 

## **Description** 

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. 

## **Product status link** ~~ee~~ STL19N60M6 

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|||
|---|---|
|Product summary|
|a|
|Order code|STL19N60M6|
|Marking|19N60M6|
|Package|PowerFLAT 8x8 HV|
|Packing|Tape and reel|

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**DS13180** - **Rev 1** - **December 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STL19N60M6 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|11|A|
||Drain current (continuous) at TC= 100 °C|6.9|A|
|IDM (1)|Drain current (pulsed)|38|A|
|PTOT|Total power dissipation at TC= 25 °C|90|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|100|V/ns|
|Tstg|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|||



_1. Pulse width limited by safe operating area._ 

_2. ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS (peak) < V(BR)DSS, VDD = 400 V._ 

_3. VDS ≤ 480 V._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.39|°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb|45|°C/W|



_1. When mounted on FR-4 board of inch², 2oz Cu._ 

**Table 3. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive (pulse width limited by TJmax)|2.7|A|
|EAS|Single pulse avalanche energy (starting TJ= 25 °C, ID= IAR; VDD= 50 V)|210|mJ|



**DS13180** - **Rev 1** 

**page 2/14** 

**STL19N60M6 Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V, TC= 125 °C(1)|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3.25|4|4.75|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 6.5 A||255|308|mΩ|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz, VGS= 0 V|-|650|-|pF|
|Coss|Output capacitance||-|45|-|pF|
|Crss|Reverse transfer capacitance||-|2|-|pF|
|Coss eq.(1)|Equivalent output capacitance|VDS= 0 to 480 V, VGS= 0 V|-|123|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID= 0 A|-|4.6|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 13 A, VGS= 0 to 10 V<br>(seeFigure 14. Test circuit for gate<br>charge behavior)|-|16.8|-|nC|
|Qgs|Gate-source charge||-|4.5|-|nC|
|Qgd|Gate-drain charge||-|8.4|-|nC|



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 6.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 13. Switching times test<br>circuit for resistive loadand<br>Figure 18. Switching time waveform)|-|16|-|ns|
|tr|Rise time||-|7|-|ns|
|td(off)|Turn-off delay time||-|28|-|ns|
|tf|Fall time||-|9|-|ns|



**DS13180** - **Rev 1** 

**page 3/14** 

**STL19N60M6 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||11|A|
|ISDM(1)|Source-drain current (pulsed)||-||38|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 11 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs, VDD= 60 V<br>(seeFigure 15.  Test circuit for inductive<br>load switching and diode recovery times)|-|208||ns|
|Qrr|Reverse recovery charge||-|1.9||µC|
|IRRM|Reverse recovery current||-|18||A|
|trr|Reverse recovery time|ISD= 13 A, di/dt = 100 A/µs,<br>VDD= 60 V, TJ= 150 °C<br>(seeFigure 15.  Test circuit for inductive<br>load switching and diode recovery times)|-|290||ns|
|Qrr|Reverse recovery charge||-|2.9||µC|
|IRRM|Reverse recovery current||-|20||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS13180** - **Rev 1** 

**page 4/14** 

**STL19N60M6 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

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Figure 1. Safe operating area Figure 2. Thermal impedance<br>ID GADG031220190845SOA K Zth PowerFLAT 8x8 HV<br>(A) δ=0.5<br>tp =1μs 0.2<br>10<br>tp =10 μs 0.1<br>10-1 0.05<br>tp =100μs 0.02<br>1 0.01 Zth= K*RthJ-c<br>tp =1ms δ= tp/ Ƭ<br>Single pulse<br>0.10.1 1 10 100 VtDSp =10ms (V) 1010-2 -5 10-4 10-3 10tp-2  Ƭ tp [(s)]<br>RDS(on) limit<br>Single pulse, TC = 25 °C,<br>TJ ≤ 150 °C, VGS = 10 V<br>**----- End of picture text -----**<br>


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Figure 3. Output characteristics Figure 4. Transfer characteristics<br>ID GIPG311020181052OCH ID GIPG311020181052TCH<br>(A)  VGS =9 V (A)<br>30 VGS = 10 V 30 VDS = 14 V<br>VGS =8 V<br>25 25<br>20 20<br>15 15<br>VGS =7 V<br>10 10<br>5 5<br>VGS =6 V<br>0 0<br>0 2 4 6 8 10 12 VDS (V) 4 5 6 7 8 9 VGS (V)<br>**----- End of picture text -----**<br>


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Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance<br>VDS GIPG311020181053QVG VGS RDS(on) GIPG221120181307RID<br>(V)  (V)  (mΩ)<br>600 VDD = 480 V 12 285<br>ID = 13 A Q g VGS =10 V<br>500 10 275<br>VDS<br>400 Qgs Qgd 8 265<br>300 6 255<br>200 4 245<br>100 2 235<br>0 0 225<br>0 4 8 12 16 Qg (nC) 0 2 4 6 8 10 12 ID (A)<br>**----- End of picture text -----**<br>


**DS13180** - **Rev 1** 

**page 5/14** 

**STL19N60M6 Electrical characteristics (curves)** 

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Figure 7. Capacitance variations Figure 8. Output capacitance stored energy<br>C  GIPG311020181051CVR EOSS GADG311020181207EOS<br>(pF)  (µJ)<br>6<br>10  [3 ]<br>CISS 5<br>4<br>10  [2 ]<br>3<br>COSS<br>f = 1 MHz 2<br>10  [1 ]<br>CRSS 1<br>10  [0 ] 0<br>10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] VDS (V) 0 100 200 300 400 500 600 VDS (V)<br>**----- End of picture text -----**<br>


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Figure 9. Normalized gate threshold voltage vs<br>Figure 10. Normalized on-resistance vs temperature<br>temperature<br>VGS(th) GIPG311020181049VTH (norm.) RDS(on) GIPG311020181049RON<br>(norm.)<br>ID =250 A 2.5<br>1.1 VGS = 10 V<br>2.0<br>1.0<br>1.5<br>0.9<br>1.0<br>0.8<br>0.5<br>0.7<br>0.0<br>0.6 -75 -25 25 75 125 TJ (°C)<br>-75 -25 25 75 125 TJ (°C)<br>**----- End of picture text -----**<br>


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Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Source-drain diode forward characteristics<br>V(BR)DSS GIPG311020181050BDV VSD GIPG311020181051SDF<br>(norm.)  (V)<br>1.1<br>1.10 ID = 1 mA Tj = -50 °C<br>1.0<br>1.05<br>0.9<br>Tj = 25 °C<br>1.00<br>0.8<br>0.95<br>0.7<br>Tj = 150 °C<br>0.90 0.6<br>0.85 0.5<br>-75 -25 25 75 125 TJ (°C) 0 2 4 6 8 10 12 ISD (A)<br>**----- End of picture text -----**<br>


**DS13180** - **Rev 1** 

**page 6/14** 

**STL19N60M6 Test circuits** 

**3 Test circuits** 

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Figure 14. Test circuit for gate charge behavior<br>Figure 13. Switching times test circuit for resistive load<br>VDD<br>RL<br>RL 2200 3.3<br>µF µF<br>VD + VDD VGS IG= CONST 100 Ω D.U.T.<br>VGS<br>RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>μF<br>PW 47 kΩ<br>GND1  GND2  1 kΩ<br>(driver signal) (power)<br>AM15855v1 GND1 GND2<br>GADG180720181011SA<br>**----- End of picture text -----**<br>


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Figure 15.  Test circuit for inductive load switching and<br>Figure 16.  Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>D<br>FAST L=100µH<br>G D.U.T. DIODE VD<br>2200 3.3<br>25Ω S B B B D 3.3µF + 1000µF VDD + µF µF VDD<br>ID<br>G<br>RG S<br>D.U.T.<br>Vi D.U.T.<br>GND1 GND2 Pw<br>GND1 GND2 AM15858v1<br>AM15857v1<br>**----- End of picture text -----**<br>


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Figure 18. Switching time waveform<br>Figure 17. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>10% VDS 10%<br>ID 0<br>VDD VDD VGS 90%<br>0 10%<br>AM01472v1<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS13180** - **Rev 1** 

**page 7/14** 

**STL19N60M6 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 PowerFLAT 8x8 HV package information** 

**Figure 19. PowerFLAT 8x8 HV package outline** 

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8222871_Rev_4 

**DS13180** - **Rev 1** 

**page 8/14** 

**STL19N60M6 PowerFLAT 8x8 HV package information** 

**Table 8. PowerFLAT 8x8 HV mechanical data** 

|**Rf**|**Dimensions (in mm)**|**Dimensions (in mm)**|**Dimensions (in mm)**|
|---|---|---|---|
|**e.**|**Min.**|**Typ.**|**Max.**|
|A|0.75|0.85|0.95|
|A1|0.00||0.05|
|A3|0.10|0.20|0.30|
|b|0.90|1.00|1.10|
|D|7.90|8.00|8.10|
|E|7.90|8.00|8.10|
|D2|7.10|7.20|7.30|
|E1|2.65|2.75|2.85|
|E2|4.25|4.35|4.45|
|e|2.00 BSC|||
|L|0.40|0.50|0.60|



**Figure 20. PowerFLAT 8x8 HV footprint** 

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8222871_REV_4_footprint<br>**----- End of picture text -----**<br>


_Note: All dimensions are in millimeters._ 

**DS13180** - **Rev 1** 

**page 9/14** 

**STL19N60M6 PowerFLAT 8x8 HV packing information** 

## **4.2 PowerFLAT 8x8 HV packing information** 

## **Figure 21. PowerFLAT 8x8 HV tape** 

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**----- Start of picture text -----**<br>
P2 (2.0±0.1) P0 (4.0±0.1)<br>T (0.30±0.05) D0 ( 1.55±0.05)<br>E (1.75±0.1)<br>D1 ( 1.5 Min)<br>P1 (12.00±0.1) A0 (8.30±0.1)<br>K0 (1.10±0.1)<br>Note: Base and Bulk quantity 3000 pcs<br>8229819_Tape_revA<br>F (7.50±0.1)<br>W (16.00±0.3)<br>B0 (8.30±0.1)<br>**----- End of picture text -----**<br>


_Note:_ 

_All dimensions are in millimeters._ 

**Figure 22. PowerFLAT 8x8 HV package orientation in carrier tape** 

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**DS13180** - **Rev 1** 

**page 10/14** 

**STL19N60M6 PowerFLAT 8x8 HV packing information** 

**Figure 23. PowerFLAT 8x8 HV reel** 

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8229819_Reel_revA 

_Note:_ 

_All dimensions are in millimeters._ 

**DS13180** - **Rev 1** 

**page 11/14** 

**STL19N60M6** 

## **Revision history** 

## **Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|13-Dec-2019|1|First release.|



**DS13180** - **Rev 1** 

**page 12/14** 

**STL19N60M6 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>PowerFLAT 8x8 HV package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**<br>PowerFLAT 8x8 HV packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12**||



**DS13180** - **Rev 1** 

**page 13/14** 

**STL19N60M6** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS13180** - **Rev 1** 

**page 14/14** 



## Links

- [View this product on Novapart](https://novapart.co/products/STL19N60M6/power-mosfet-n-channel-600-v-11-a-0255-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stl19n60m6/mosfet-n-ch-600v-11a-powerflat/dp/3527139)
---

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