# Dual MOSFET, N Channel, 40 V, 40 V, 15 A, 15 A, 8000 µohm

![Product image](https://novapart.co/image/farnell:2098274/)

**URL**: https://novapart.co/products/STL15DN4F5/dual-mosfet-n-channel-40-v-15-a-8000-ohm
**SKU**: STL15DN4F5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.9740
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | PowerFLAT |
| Operating Temperature Max | 175°C |
| Power Dissipation N Channel | 60W |
| Power Dissipation P Channel | 60W |
| Drain Source Voltage Vds N Channel | 40V |
| Drain Source Voltage Vds P Channel | 40V |
| Continuous Drain Current Id N Channel | 15A |
| Continuous Drain Current Id P Channel | 15A |
| Drain Source On State Resistance N Channel | 8000µohm |
| Drain Source On State Resistance P Channel | 8000µohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098274/)

## **STL15DN4F5** 

Automotive-grade dual N-channel 40 V, 8 mΩ typ., 15 A STripFET™ F5 Power MOSFET in a PowerFLAT™ 5x6 DI 

Datasheet - production data 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|ID|
|---|---|---|---|
|STL15DN4F5|40 V|9 mΩ|15 A|



- Designed for automotive applications and AEC-Q101 qualified 

- Extremely low RDS(on) 

- Very low gate charge 

- Low gate drive power loss 

- Wettable flank package 

## **Applications** 

- Switching applications 

## **Description** 

**Figure 1: Internal schematic diagram** 

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ F5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STL15DN4F5|15DN4F5|PowerFLATTM5x6 double island|Tape and reel|



July 2016 DocID17739 Rev 4 

This is information on a product in full production. 

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_www.st.com_ 

|**Contents**<br>**STL15DN4F5**|**Contents**<br>**STL15DN4F5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>PowerFLAT 5x6 double island WF type C package information ..... 10|
||4.2<br>Packing information ......................................................................... 13|
|**5**|**Revision history ............................................................................ 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|40|V|
|VGS|Gate-source voltage|±20|V|
|ID_(1)_|Drain current (continuous) at TC= 25 °C|60|A|
|ID_(2)_|Drain current (continuous) at Tpcb= 25 °C|15|A|
|ID_(2)_|Drain current (continuous) at Tpcb= 100°C|10|A|
|IDM_(2)(3)_|Drain current (pulsed)|60|A|
|PTOT_(1)_|Total dissipation at TC= 25 °C|60|W|
|PTOT_(2)_|Total dissipation at Tpcb= 25°C|4.3|W|
|Tj|Operating junction temperature range|-55 to 175|°C|
|Tstg|Storage temperature range|||



## **Notes:** 

- (1)The value is rated according Rthj-c. 

- (2)The value is rated according Rthj-pcb. 

- (3)Pulse width limited by safe operating area. 

**Table 3: Thermal resitance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|2.5|°C/W|
|Rthj-pcb_(1)_|Thermal resistance junction-pcb|35|°C/W|



## **Notes:** 

- (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s. 

**Table 4: Avalanche data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAV|Not-repetitive avalanche current, (pulse width limited byTjmax.)|7.5|A|
|EAS_(1)_|Singlepulse avalanche energy(startingTJ= 25 °C, ID= IAV, VDD= 24 V)|150|mJ|



## **Notes:** 

- (1)Tested at wafer level only. 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5: On/Off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250 μA, VGS= 0 V|40|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0 V,<br>VDS= 40 V|||1|µA|
|||VGS= 0 V, VDS= 40 V,<br>TC= 125 °C_(1)_|||10|µA|
|IGSS|Gate-body leakage<br>current|VGS= ±20 V, VDS= 0 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 7.5 A||8|9|mΩ|



## **Notes:** 

(1)Defined by design, not subject to production test 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|1550|-|pF|
|Coss|Output capacitance||-|230|-||
|Crss|Reverse transfer<br>capacitance||-|25|-||
|Qg|Totalgate charge|VDD= 20 V, ID= 15 A,<br>VGS= 10 V<br>(see_Figure 14: "Test circuit for_<br>_gate charge behavior"_)|-|25|-|nC|
|Qgs|Gate-source charge||-|6|-||
|Qgd|Gate-drain charge||-|5.5|-||



**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 20 V, ID= 7.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Test circuit for_<br>_resistive load switching times"_)|-|18|-|ns|
|tr|Rise time||-|45|-||
|td(off)|Turn-off delay time||-|32|-||
|tf|Fall time||-|5|-||



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**Electrical characteristics** 

**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Forward on voltage||-||15|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||60|A|
|VSD_(2)_|Forward on voltage|VGS= 0, ISD= 15 A|-||1.1|V|
|trr|Reverse recoverytime|ISD= 15 A, di/dt = 100 A/µs<br>VDD= 32 V, Tj= 150 °C<br>(see_Figure 15: "Test circuit for_<br>_inductive load switching and_<br>_diode recovery times"_)|-|30||ns|
|Qrr|Reverse recovery charge||-|35||nC|
|IRRM|Reverse recovery current||-|2.2||A|



## **Notes:** 

(1)Pulse width limited by safe operating area 

(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5 % 

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**Electrical characteristics** 

## **2.2 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [149 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>K oe Zth_powertlat<br>fo =  0ad<br>Err<br>SE m a aoe atame<br>10 [-1]<br>a ae<br>10 [-2]<br>PTA _L® 1<br>I TE 2n7k Rive (CUT<br>10 [-3] As ouce |n[Till] =e ||<br>LCe aCe CC mm<br>10 [-4] ETI CT TTT I<br>10-3 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] tp(s)<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics** 

**Figure 5: Transfer characteristics** 

**Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance** Ves ~~AM~~ O07135v1 Ros(on) ~~AM0~~ 7133v1 ID=15A = ~~‘TreLZ~~ | ~~== hot~~ 

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**Electrical characteristics** 

**Figure 8: Capacitance variations** 

**Figure 9: Normalized gate threshold voltage vs temperature** 

**Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs temperature temperature** 

**Figure 12: Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 561] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load  Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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## **Package information** 

## **4.1 PowerFLAT 5x6 double island WF type C package information** 

**Figure 19: PowerFLAT™ 5x6 double island WF type C package outline** 

**==> picture [406 x 506] intentionally omitted <==**

**----- Start of picture text -----**<br>
826945_DI_WF_typeC_r16<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 9: PowerFLAT™ 5x6 double island WF type C mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.10|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.10|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|D7|1.68||1.98|
|e||1.27||
|E|6.20|6.40|6.60|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.85|1.00|1.15|
|E8|0.55||0.75|
|E9|4.00|4.20|4.40|
|E10|3.55|3.70|3.85|
|L|0.90|1.00|1.10|
|L1|0.175|0.275|0.375|
|K|1.05||1.35|
|ϴ|0°||12°|



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## **Package information** 

**Figure 20: PowerFLAT™ 5x6 double island recommended footprint (dimensions are in mm)** 

**==> picture [406 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
8256945_FP_std_R16<br>**----- End of picture text -----**<br>


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**Package information** 

## **4.2 Packing information** 

**Figure 21: PowerFLAT™ 5x6 WF tape (dimensions are in mm)** 

**Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape** 

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**Package information** 

**Figure 23: PowerFLAT™ 5x6 reel (dimensions are in mm)** 

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**Revision history** 

## **5 Revision history** 

**Table 10: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|02-Sep-2010|1|First release.|
|01-Jul-2014|2|Updated:_Section 4: Package information_.<br>Minor text changes|
|13-Feb-2015|3|Updated_Section 4: Package information._<br>Added_Section 5: Packaging information_|
|06-Jul-2016|4|Updated:_Section 6.1: "PowerFLAT 5x6 double island WF type C_<br>_package information"_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl15dn4f5/mosfet-dual-n-ch-40v-15a-powerflat/dp/2098274)
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