# Power MOSFET, N Channel, 30 V, 150 A, 1600 µohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3367051/)

**URL**: https://novapart.co/products/STL150N3LLH6/power-mosfet-n-channel-30-v-150-a-1600-ohm
**SKU**: STL150N3LLH6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3650
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET H6 |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 1600µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367051/)

**STL150N3LLH6** 

Datasheet 

N-channel 30 V, 0.0016 Ω typ., 33 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package 

## **Features** 

|**Order code**|**VDS**|**RDS(on) max.**|**ID**|**Package**|
|---|---|---|---|---|
|STL150N3LLH6|30 V|0.002 Ω|33 A|PowerFLAT™ 5x6|



- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**==> picture [149 x 244] intentionally omitted <==**

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D(5, 6, 7, 8) 8 7 6 5<br>G(4)<br>1 2 3 4<br>1 I |<br>S(1, 2, 3) Top View<br>NG4D5678S123<br>Product status link<br>STL150N3LLH6<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STL150N3LLH6|
|**Marking**|150N3LH6|
|**Package**|PowerFLAT™ 5x6|
|**Packing**|Tape and reel|



**DS6078** - **Rev 4** - **April 2019** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STL150N3LLH6 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|30|V|
|VGS|Gate-source voltage|±20|V|
|ID (1)|Drain current (continuous) at TC= 25 °C|150|A|
||Drain current (continuous) at TC= 100 °C|93||
|ID (2)|Drain current (continuous) at Tpcb= 25 °C|33|A|
||Drain current (continuous) at Tpcb= 100 °C|20.8|A|
|PTOT (1)|Total power dissipation at TC= 25 °C|80|W|
|PTOT (2)|Total power dissipation at Tpcb= 25 °C|4|W|
|EAS|Single pulse avalanche energy (starting TJ= 25 °C, ID= IAV)|200|mJ|
|IAV|Not-repetitive avalanche current, (pulse width limited by Tjmax)|20|A|
|Tstg<br>Tj|Storage temperature range<br>Operating junction temperature range|-55 to 150|°C|



_1. The value is rated according to Rthj-c._ 

_2. The value is rated according to Rthj-pcb._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|1.56|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb|31.3||



_1. When mounted on an 1-inch² FR-4, 2 Oz copper board, t < 10 s._ 

**DS6078** - **Rev 4** 

**page 2/16** 

**STL150N3LLH6 Electrical characteristics** 

**2** 

## **Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified) 

## **Table 3. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 250 µA|30|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 30 V|||1|µA|
|||VGS= 0 V, VDS= 30 V,<br>TC= 125 °C(1)|||10|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1|||V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 16.5 A||0.0016|0.002|Ω|
|||VGS= 4.5 V, ID= 16.5 A||0.0025|0.0034||



_1. Defined by design, not subject to production test._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|4040|-|pF|
|Coss|Output capacitance||-|740|-||
|Crss|Reverse transfer capacitance||-|425|-||
|Qg|Total gate charge|VDD= 15 V, ID= 33 A,<br>VGS= 0 to 4.5 V<br>(seeFigure 13. Test circuit for gate<br>charge behavior)|-|40|-|nC|
|Qgs|Gate-source charge||-|16.3|-||
|Qgd|Gate-drain charge||-|15.8|-||
|Rg|Gate input resistance|f = 1 MHz, ID= 0 A|-|1.4|-|Ω|



**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 15 V, ID= 16.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 12. Test circuit for<br>resistive load switching timesand<br>Figure 17. Switching time<br>waveform)|-|17|-|ns|
|tr|Rise time||-|18|-||
|td(off)|Turn-off delay time||-|75|-||
|tf|Fall time||-|46|-||



**DS6078** - **Rev 4** 

**page 3/16** 

**STL150N3LLH6 Electrical characteristics** 

## **Table 6. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||33|A|
|ISDM(1)|Source-drain current (pulsed)||-||132|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 33 A|-||1.1|V|
|trr|Reverse recovery time|ISD=  33 A, di/dt = 100 A/µs,<br>VDD= 25 V<br>(seeFigure 14. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|34||ns|
|Qrr|Reverse recovery charge||-|35||nC|
|IRRM|Reverse recovery current||-|2.1||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS6078** - **Rev 4** 

**page 4/16** 

**STL150N3LLH6 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area** 

**==> picture [185 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM04953v1<br>(A) Operation in this area is Tj=150°C<br>Limited by max RDS(on) Tpcb=25°C<br>100 Sinlge<br>pulse<br>10<br>1 10ms<br>100ms<br>1s<br>0.1<br>0.01<br>0.1 1 10 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 2. Thermal impedance** 

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K<br>10 [-1]<br>10 [-2]<br>pcb<br>10 [-3]<br>10 [-4]<br>10-3 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] tp(s)<br>**----- End of picture text -----**<br>


**Figure 3. Output characteristics** 

**==> picture [175 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM03998v1<br>ID<br>(A)<br>VGS=10V<br>350<br>300<br>5V<br>250<br>4V<br>200<br>150<br>100<br>3V<br>50<br>0<br>0 2 4 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 4. Transfer characteristics** 

**==> picture [175 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM03999v1<br>ID<br>(A)<br>300 VDS=1V<br>250<br>200<br>150<br>100<br>50<br>0<br>0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. Normalized V(BR)DSS vs temperature Figure 6. Static drain-source on-resistance<br>V(BR)DS S AM04903v1 RDS(on) AM04905v1<br>(m W )<br>(norm)<br>4.5 VGS=10V<br>1.06<br>ID=250µA 4.0<br>1.04<br>3.5<br>3.0<br>1.02<br>2.5<br>1.00<br>2.0<br>0.98 1.5<br>1.0<br>0.96<br>0.5<br>0.94 0.0<br>-50 0 50 100 150 TJ(°C) 0 20 40 60 80 ID(A)<br>**----- End of picture text -----**<br>


**DS6078** - **Rev 4** 

**page 5/16** 

**STL150N3LLH6 Electrical characteristics (curves)** 

**==> picture [513 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations<br>VGS AM04000v1 C AM00893v1<br>(V) (pF)<br>VDD=15V f=1MHz<br>12<br>ID=80A 6000<br>10<br>4500<br>8 Ciss<br>6 3000<br>4<br>1500<br>2 Coss<br>Crss<br>0 0<br>0 20 40 60 80 100 Qg(nC) 0 5 10 15 20 25 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [513 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Normalized gate threshold voltage vs<br>Figure 10. Normalized on-resistance vs temperature<br>temperature<br>(norm)VGS(th) ID=250µA AM04901v1 (norm)RDS(on)1.6 ID=40A AM04902v1<br>VGS=10V<br>1.1<br>1.4<br>1.0 1.2<br>1.0<br>0.8<br>0.8<br>0.6<br>0.6<br>0.4 0.4<br>0.2 0.2<br>0.0<br>0.0 -50 0 50 100 150 TJ(°C)<br>-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 11. Source-drain diode forward characteristics** 

**==> picture [173 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM04906v1<br>VSD<br>(V) TJ=-50°C<br>1.0<br>0.9<br>0.8<br>0.7 TJ=25 ° C TJ=150°C<br>0.6<br>0.5<br>0.4<br>0 20 40 60 80 ISD(A)<br>**----- End of picture text -----**<br>


**DS6078** - **Rev 4** 

**page 6/16** 

**STL150N3LLH6 Test circuits** 

**3 Test circuits** 

**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Test circuit for inductive load switching and<br>Figure 15. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 17. Switching time waveform<br>Figure 16. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS6078** - **Rev 4** 

**page 7/16** 

**STL150N3LLH6 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**DS6078** - **Rev 4** 

**page 8/16** 

**STL150N3LLH6 PowerFLAT™ 5x6 type C package information** 

## **4.1 PowerFLAT™ 5x6 type C package information** 

**Figure 18. PowerFLAT™ 5x6 type C package outline** 

**==> picture [56 x 307] intentionally omitted <==**

**----- Start of picture text -----**<br>
Bottom view<br>Side view<br>Top view<br>**----- End of picture text -----**<br>


**==> picture [64 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8231817_typeC_Rev18<br>**----- End of picture text -----**<br>


**DS6078** - **Rev 4** 

**page 9/16** 

**STL150N3LLH6 PowerFLAT™ 5x6 type C package information** 

**Table 7. PowerFLAT™ 5x6 type C package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|C|5.80|6.00|6.20|
|D|5.00|5.20|5.40|
|D2|4.15||4.45|
|D3|4.05|4.20|4.35|
|D4|4.80|5.00|5.20|
|D5|0.25|0.40|0.55|
|D6|0.15|0.30|0.45|
|e||1.27||
|E|5.95|6.15|6.35|
|E2|3.50||3.70|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|
|E6|0.20|0.325|0.45|
|E7|0.75|0.90|1.05|
|K|1.05||1.35|
|L|0.725||1.025|
|L1|0.05|0.15|0.25|
|θ|0°||12°|



**DS6078** - **Rev 4** 

**page 10/16** 

**STL150N3LLH6 PowerFLAT™ 5x6 type C package information** 

**Figure 19. PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)** 

**==> picture [137 x 217] intentionally omitted <==**

**==> picture [83 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
8231817_FOOTPRINT_simp_Rev_18<br>**----- End of picture text -----**<br>


**DS6078** - **Rev 4** 

**page 11/16** 

**STL150N3LLH6 PowerFLAT™ 5x6 packing information** 

## **4.2 PowerFLAT™ 5x6 packing information** 

## **Figure 20. PowerFLAT™ 5x6 tape (dimensions are in mm)** 

**==> picture [286 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
(I)   Measured from centreline of sprocket hole<br>      to centreline of pocket. Base and bulk quantity 3000 pcs<br>All dimensions are in millimeters<br>(II)  Cumulative tolerance of 10 sprocket<br>      holes is ±0.20.<br>(III) Measured from centreline of sprocket<br>      hole to centreline of pocket<br>8234350_Tape_rev_C<br>**----- End of picture text -----**<br>


**==> picture [272 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21. PowerFLAT™ 5x6 package orientation in carrier tape<br>**----- End of picture text -----**<br>


**==> picture [36 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin 1<br>identification<br>**----- End of picture text -----**<br>


**==> picture [391 x 145] intentionally omitted <==**

**DS6078** - **Rev 4** 

**page 12/16** 

**STL150N3LLH6 PowerFLAT™ 5x6 packing information** 

**Figure 22. PowerFLAT™ 5x6 reel** 

**DS6078** - **Rev 4** 

**page 13/16** 

**STL150N3LLH6** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|21-Jan-2009|1|First release.|
|08-Sep-2009|2|Document status promoted from preliminary data to datasheet|
|11-Nov-2010|3|Corrected title in first page<br>RDS(on)max value has been corrected.|
|03-Apr-2019|4|Modified marking on cover page.<br>Minor text changes.|



**DS6078** - **Rev 4** 

**page 14/16** 

**STL150N3LLH6 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
||**4.1**<br>PowerFLAT™ 5x6 type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
||**4.2**<br>PowerFLAT™ 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14**||



**DS6078** - **Rev 4** 

**page 15/16** 

**STL150N3LLH6** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2019 STMicroelectronics – All rights reserved 

**DS6078** - **Rev 4** 

**page 16/16** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl150n3llh6/mosfet-n-ch-30v-150a-150deg-c/dp/3367051)
---

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