# Power MOSFET, N Channel, 600 V, 10 A, 0.32 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:2098273/)

**URL**: https://novapart.co/products/STL13NM60N/power-mosfet-n-channel-600-v-10-a-032-ohm
**SKU**: STL13NM60N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9400
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10A |
| Drain Source On State Resistance | 0.32ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098273/)

## **STL13NM60N** 

N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package 

**Datasheet** - **production data** 

## **Features** 

**Order code VDS @ Tjmax RDS(on) max. ID** STL13NM60N 650 V 0.385 Ω 10 A ~~—___—__—~~ • 100% avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistance 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

## **Description** 

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STL13NM60N|13NM60N|PowerFLAT™ 8x8 HV|Tape and reel|



_www.st.com_ 

November 2013 

DocID018870 Rev 2 

1/16 

This is information on a product in full production. 

**Contents** 

**STL13NM60N** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|600|V|
|VGS|Gate-source voltage|± 30|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|10|A|
|ID<br>(1)|Drain current (continuous) at TC= 100 °C|6.5|A|
|ID<br>(2)|Drain current (continuous) at Tamb= 25 °C|1.9|A|
|ID<br>(2)|Drain current (continuous) at Tamb= 100 °C|1.1|A|
|IDM<br>(2),(3)|Drain current (pulsed)|7.6|A|
|PTOT (2)|Total dissipation at Tamb= 25 °C|3|W|
|PTOT<br>(1)|Total dissipation at TC= 25 °C|90|W|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tjmax)|3|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|93|mJ|
|dv/dt(4)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. The value is rated according to Rthj-case 

2. When mounted on 1inch² FR-4 board, 2 oz Cu 

3. Pulse width limited by safe operating area 

4. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|1.39|°C/W|
|Rthj-amb<br>(1)|Thermal resistance junction-amb max|42|°C/W|



1. When mounted on 1inch² FR-4 board, 2 oz Cu 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V|||1|µA|
|||VDS= 600 V, TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 5 A||0.320|0.385|Ω|



**Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0|-|790|-|pF|
|Coss|Output capacitance||-|60|-|pF|
|Crss|Reverse transfer<br>capacitance||-|3.6|-|pF|
|Coss eq.<br>(1)|Output equivalent<br>capacitance|VDS= 0 to 480 V, VGS= 0|-|135|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID=0|-|4.7|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 10 A,<br>VGS= 10 V<br>(see_Figure 14_)|-|27|-|nC|
|Qgs|Gate-source charge||-|4|-|nC|
|Qgd|Gate-drain charge||-|14|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 18_)|-|3|-|ns|
|tr|Rise time||-|8|-|ns|
|td(off)|Turn-off delay time||-|30|-|ns|
|tf|Fall time||-|10|-|ns|



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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||10|A|
|ISDM (1)|Source-drain current (pulsed)||-||40|A|
|VSD (2)|Forward on voltage|ISD= 10 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 15_)|-|340||ns|
|Qrr|Reverse recovery charge||-|2||µC|
|IRRM|Reverse recovery current||-|18||A|
|trr|Reverse recovery time|ISD= 10 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 15_)|-|290||ns|
|Qrr|Reverse recovery charge||-|190||µC|
|IRRM|Reverse recovery current||-|17||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**==> picture [175 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zth PowerFLAT 8x8 HV<br>K<br>d=0.5<br>BERNE a<br>0.2<br>0.1<br>10-1 oe Ig 0.05<br>0.02 = kK Rings case<br>fp Zn<br>a 0.01 6= tp/T<br>Single pulse<br>-2 el |<br>10<br>10-5 10-4 10-3 10-2 tp [(s)]<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

## **Figure 6. Normalized VDS vs temperature** 

## **Figure 7. Static drain-source on-resistance** 

**==> picture [426 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS AM09028v1 RDS(on) AM09779v1<br>(norm) ID=1mA (Ω)<br>1.10<br>pp | 0.335 an VGS=10V TTI]<br>1.08<br>PTT yt Ty 0.330 rT 45<br>1.06<br>PoE | tT | EK 0.325 OPP At<br>1.04 PT TTL yY ET A<br>1.02 TTP PT YELe 0.320 PTTL LAE<br>1.00 PLEYEL 0.315 PTT IW TEL Te<br>0.98<br>P| iA] ] | 0.310 TTYL<br>0.96<br>plat} i tt 0.305 ATT<br>0.94 Ty | | | tt WA<br>0.92 ZA 0.300 PEE LELEELEL<br>-50 -25 0 25 50 75 100 TJ(°C) 0 1 2 3 4 5 6 7 8 9 10 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**Figure 10. Normalized gate threshold voltage vs** 

**temperature** 

## **Figure 9. Capacitance variations** 

**Figure 11. Normalized on resistance vs temperature** 

**Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

**Table 8. PowerFLAT™ 8x8 HV mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80|0.90|1.00|
|A1|0.00|0.02|0.05|
|b|0.95|1.00|1.05|
|D||8.00||
|E||8.00||
|D2|7.05|7.20|7.30|
|E2|4.15|4.30|4.40|
|e||2.00||
|L|0.40|0.50|0.60|



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**Package mechanical data** 

**==> picture [273 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data<br>**----- End of picture text -----**<br>


**==> picture [405 x 607] intentionally omitted <==**

**----- Start of picture text -----**<br>
8222871_REV_C<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Figure 20. PowerFLAT™ 8x8 HV recommended footprint (dimensions in mm.)** 

**==> picture [405 x 357] intentionally omitted <==**

**----- Start of picture text -----**<br>
8222871_REV_C_footprint<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 21. PowerFLAT™ 8x8 HV tape** 

**==> picture [405 x 257] intentionally omitted <==**

**----- Start of picture text -----**<br>
P2 (2.0±0.1) P0 (4.0±0.1)<br>T (0.30±0.05) D0 ( 1.55±0.05)<br>E (1.75±0.1)<br>D1 ( 1.5 Min)<br>P1 (12.00±0.1) A0 (8.30±0.1)<br>K0 (1.10±0.1)<br>Note: Base and Bulk quantity 3000 pcs<br>8229819_Tape_revA<br>)<br>)<br>F (7.50±0.1)<br>(B0 8.30±0.1 (W 16.00±0.3<br>**----- End of picture text -----**<br>


**Figure 22. PowerFLAT™ 8x8 HV package orientation in carrier tape.** 

**==> picture [405 x 143] intentionally omitted <==**

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**Packaging mechanical data** 

**==> picture [175 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. PowerFLAT™ 8x8 HV reel<br>**----- End of picture text -----**<br>


**==> picture [149 x 149] intentionally omitted <==**

**==> picture [167 x 149] intentionally omitted <==**

8229819_Reel_revA 

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**Revision history** 

## **6 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|23-May-2011|1|First release.|
|19-Nov-2013|2|– Modified: Qg, Qgdvalues, the entire typical values and IDin_Table 6_<br>– Modified:_Figure 3_,_6_,_8_,_9_<br>– Updated:_Section 4: Package mechanical data_<br>– Added:_Section 5: Packaging mechanical data_<br>– Minor text changes|



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