# Power MOSFET, N Channel, 60 V, 130 A, 3000 µohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3129793RL/)

**URL**: https://novapart.co/products/STL130N6F7/power-mosfet-n-channel-60-v-130-a-3000-ohm
**SKU**: STL130N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7800
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 125W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.003ohm |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 130A |
| Drain Source On State Resistance | 3000µohm |
| Automotive Qualification Standard | - |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129793RL/)

## **STL130N6F7** 

N-channel 60 V, 0.003 Ω typ., 130 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package 

Datasheet - production data 

## **Features** 

**Order code VDS RDS(on) max ID** STL130N6F7 60 V 0.0035 Ω 130 A ~~Sn~~ 

- Among the lowest RDS(on) on the market 

- Excellent figure of merit (FoM) 

- Low Crss/Ciss ratio for EMI immunity 

- High avalanche ruggedness 

## **Applications** 

**Figure 1: Internal schematic diagram** 

- Switching applications 

## **Description** 

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STL130N6F7|130N6F7|PowerFLATTM5x6|Tape and reel|



This is information on a product in full production. 

_www.st.com_ 

June 2015 

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|**Contents**<br>**STL130N6F7**|**Contents**<br>**STL130N6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 5|
|**3**|**Test circuits ..................................................................................... 7**|
|**4**|**Package mechanical data ............................................................... 8**|
||4.1<br>PowerFLAT™ 5x6 type C package information ................................ 9|
||4.2<br>PowerFLAT™ 5x6 packing information ........................................... 11|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>_(1)_|Drain current (continuous) at TC= 25 °C|130|A|
|ID<br>_(1)_|Drain current (continuous) at TC= 100 °C|95|A|
|IDM<br>_(1)(2)_|Drain current (pulsed)|520|A|
|ID<br>_(3)_|Drain current (continuous) at Tpcb= 25 °C|26|A|
|ID<br>_(3)_|Drain current (continuous) at Tpcb= 100 °C|19|A|
|IDM<br>_(2)(3)_|Drain current (pulsed)|104|A|
|PTOT<br>_(1)_|Total dissipation at TC= 25 °C|125|W|
|PTOT<br>_(3)_|Total dissipation at Tpcb= 25 °C|4.8|W|
|Tj|Operating junction temperature|-55 to 175|°C|
|Tstg|Storage temperature|||



## **Notes:** 

- (1) This value is rated according to Rthj-c 

- (2) Pulse width limited by safe operating area 

- (3) This value is rated according to Rthj-pcb 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb<br>_(1)_|Thermal resistancejunction-pcb max.|31.3|°C/W|
|Rthj-case|Thermal resistancejunction-case max.|1.2|°C/W|



## **Notes:** 

- (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: On /off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1 mA, VGS= 0 V|60|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V<br>VDS= 60 V|||1|µA|
|IGSS|Gate-body leakage current|VGS= 20 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 13 A||0.003|0.0035|Ω|



## **Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0 V|-|2600|-|pF|
|Coss|Output capacitance||-|1200|-|pF|
|Crss|Reverse transfer capacitance||-|115|-|pF|
|Qg|Totalgate charge|VDD= 30 V, ID= 26 A,<br>VGS= 10 V|-|42|-|nC|
|Qgs|Gate-source charge||-|13.6|-|nC|
|Qgd|Gate-drain charge||-|13|-|nC|



**Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 30 V, ID= 26 A,<br>RG= 4.7 Ω, VGS= 10 V|-|24|-|ns|
|tr|Rise time||-|44|-|ns|
|td(off)|Turn-off delaytime||-|62|-|ns|
|tf|Fall time||-|24|-|ns|



**Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on voltage|ISD=26 A, VGS= 0 V|-||1.2|V|
|trr|Reverse recoverytime|ID= 26 A, di/dt = 100 A/µs<br>VDD= 48 V|-|50||ns|
|Qrr|Reverse recoverycharge||-|56||nC|
|IRRM|Reverse recoverycurrent||-|2.2||A|



## **Notes:** 

(1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [391 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Thermal impedance<br>Figure 2: Safe operating area<br>ID GIPD110520151416FSR<br>(A)<br>100<br>10µs<br>100µs<br>10<br>1ms<br>Tj < 175°C<br>Tc = 25°C 10ms<br>Single pulse<br>1<br>0.1 1 10 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [392 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5: Transfer characteristics<br>Figure 4: Output characteristics  GIPD280420151144FSR<br>ID GIPD280420151137FSR (A)ID<br>(A) VGS= 7, 8, 9, 10 V<br>160<br>VDS = 6 V<br>6V<br>150<br>5V<br>120<br>100<br>80<br>4V<br>40 50<br>3V<br>0<br>0 2 4 6 8 VDS(V) 0<br>0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


**==> picture [393 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Gate charge vs gate-source  Figure 7: Static drain-source on-resistance<br>voltage  RDS(on) GIPD280420151211FSR<br>VGS GIPD280420151205FSR (mΩ) VGS= 10V<br>(V)<br>12 VDD = 30 V 3.20<br>ID = 26 A<br>10<br>3.12<br>8<br>6 3.04<br>4<br>2.96<br>2<br>0 2.88<br>0 10 20 30 40 50 Qg(nC) 5 10 15 20 25 ID(A)<br>**----- End of picture text -----**<br>


**Figure 6: Gate charge vs gate-source voltage** 

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**Electrical characteristics** 

**==> picture [398 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Normalized gate threshold voltage vs<br>Figure 8: Capacitance variations  temperature<br>C GIPD280420151219FSR<br>(pF)<br>f= 1MHz<br>10000<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>10<br>0.1 1 10 VDS(V)<br>**----- End of picture text -----**<br>


**==> picture [400 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11: Normalized V(BR)DSS vs<br>Figure 10: Normalized on-resistance vs<br>temperature<br>temperature  GIPD280420151232FSR<br>GIPD280420151227FSR V(BR)DSS<br>RDS(on) (norm)<br>(norm)<br>2.2 VGS= 10V 1.04 ID= 1mA<br>ID= 13A<br>1.8<br>1.02<br>1.4<br>1.00<br>1.0<br>0.98<br>0.6<br>0.2<br>-75 -25 25 75 125 175 Tj(°C) 0.96<br>-75 -25 25 75 125 175 Tj(°C)<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

**==> picture [199 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280420151236FSR<br>VSD<br>(V)<br>Tj= -55°C<br>0.9<br>0.8 Tj= 25°C<br>0.7<br>0.6 Tj= 175°C<br>0.5<br>5 10 15 20 25 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13: Switching times test circuit for resistive load** 

**==> picture [207 x 79] intentionally omitted <==**

**Figure 15: Test circuit for inductive load switching and diode recovery times** 

**==> picture [213 x 129] intentionally omitted <==**

**Figure 17: Unclamped inductive waveform** 

**Figure 14: Gate charge test circuit** 

**==> picture [200 x 148] intentionally omitted <==**

**Figure 16: Unclamped inductive load test circuit** 

**==> picture [161 x 146] intentionally omitted <==**

**Figure 18: Switching time waveform** 

**==> picture [32 x 32] intentionally omitted <==**

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**Package mechanical** data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical** data 

## **4.1 PowerFLAT™ 5x6 type C package information** 

**Figure 19: PowerFLAT™ 5x6 type C package outline** 

**==> picture [406 x 608] intentionally omitted <==**

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**Package mechanical** data 

**Table 8: PowerFLAT™ 5x6 type C mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80||1.00|
|A1|0.02||0.05|
|A2||0.25||
|b|0.30||0.50|
|D||5.20||
|E||6.15||
|D2|4.11||4.31|
|E2|3.50||3.70|
|e||1.27||
|e1||0.65||
|L|0.715||1.015|
|K|1.05||1.35|
|E3|2.35||2.55|
|E4|0.40||0.60|
|E5|0.08||0.28|



**Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)** 

**==> picture [408 x 258] intentionally omitted <==**

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**Package mechanical** data 

## **4.2 PowerFLAT™ 5x6 packing information** 

**Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm)** 

**Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape** 

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**Package mechanical** data 

**Figure 23: PowerFLAT™ 5x6 reel** 

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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|17-Feb-2015|1|First release.|
|11-May-2015|2|Updated  and_Section 2: "Electrical characteristics"_<br>Added_Section 2.1: "Electrical characteristics (curves)"_<br>Updated_Section 4: "Package mechanical data"_<br>Minor text changes.|
|30-Jun-2015|3|Document statuspromoted frompreliminarytoproduction data.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STL130N6F7/power-mosfet-n-channel-60-v-130-a-3000-ohm)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stl130n6f7/mosfet-n-ch-60v-130a-125w-powerflat/dp/3129793RL)
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