# Power MOSFET, P Channel, 60 V, 12 A, 0.13 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3132749/)

**URL**: https://novapart.co/products/STL12P6F6/power-mosfet-p-channel-60-v-12-a-013-ohm-powerflat
**SKU**: STL12P6F6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2910
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | P Channel |
| Product Range | STripFET F6 |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132749/)

## **STL12P6F6** 

P-channel 60 V, 0.13 Ω typ., 12 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package 

**Datasheet** - **production data** 

## **Features** 

|**Order code**|**VDS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STL12P6F6|60 V|0.16Ω @ 10 V|12 A|



**==> picture [37 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>2<br>3<br>4<br>**----- End of picture text -----**<br>


- Very low on-resistance 

- Very low gate charge 

- High avalanche ruggedness 

- Low gate drive power loss 

**==> picture [87 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PowerFLAT™ 5x6<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Figure 1. Internal schematic diagram** 

## **Description** 

This device is an P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STL12P6F6|12P6F6|PowerFLAT 5x6|Tape and reel|



_Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed._ 

July 2014 

DocID024400 Rev 2 

1/16 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STL12P6F6** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

||||~~ee~~|
|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|VDS<br>~~a~~|Drain-source voltage|60<br>~~po~~|V<br>~~ee~~<br>~~po~~|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)<br>~~a~~<br>~~es~~|Drain current (continuous) at TC= 25 °C<br>|12<br>~~po~~|A<br>~~po~~|
|ID<br>(1)<br>~~esee~~|Drain current (continuous) at TC= 100 °C<br>~~ee~~|8.5<br>~~po~~|A<br>~~po~~|
|IDM<br>(1)(2)<br>~~es~~<br>~~a~~|Drain current (pulsed)<br>|48<br>~~po~~|A<br>~~po~~|
|ID<br>(3)<br>~~a~~|Drain current (continuous) at Tpcb= 25 °C|4|A<br>~~ee~~|
|ID<br>(3)<br>~~a~~|Drain current (continuous) at Tpcb= 100 °C|2.8<br>~~eee~~|A<br>~~eee~~<br>~~ee~~|
|PTOT<br>(1)<br>~~a~~<br>~~a~~|Total dissipation at TC= 25 °C|75|W<br>~~ee~~|
|PTOT<br>(3)<br>~~es~~|Total dissipation at Tpcb= 25 °C<br>~~ee~~|4.8<br>~~ee~~<br>~~_~~|W<br>~~_~~|
|Tj<br>~~es~~<br>~~a~~|Operating junction temperature<br>~~ee~~|-55 to 175<br>~~ee~~<br>~~_~~<br>~~a~~|°C<br>~~_~~<br>~~a~~|
|Tstg<br>~~es~~<br>~~a~~|Storage temperature<br>~~ee~~||°C<br>~~_~~<br>~~a~~|



1. The value is according to Rthj-case 

2. Pulse width is limited by safe operating area. 

3. The value is according to Rthj-pcb 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|2|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|31.3|°C/W|



1. When mounted on FR-4 board of 15 mm[2] , 2 Oz Cu, t<10 sec 

_Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed._ 

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**STL12P6F6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase = 25 °C unless otherwise specified). 

**Table 4. On /off states** 

|||**Table 4. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 250 µA|60|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 60 V|||1|µA|
|||VGS= 0, VDS= 60 V,<br>TC=125 °C|||10|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2||4|V|
|RDS(on)|Static drain-source<br>on- resistance|VGS= 10 V, ID= 1.5 A||0.13|0.16|Ω|



**Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit** Ciss Input capacitance - 340 - pF Coss Output capacitance VGS = 0, VDS = 48 V, f = 1 MHz - 40 - pF Reverse transfer Crss capacitance - 20 - pF Qg Total gate charge VDD = 30 V, ID = 3 A, - 6.4 - nC Qgs Gate-source charge VGS = 10 V - 1.7 - nC Qgd Gate-drain charge (see _Figure 14_ ) - 1.7 - nC **Table 6. Switching times** ~~a=| Ee~~ **Symbol Parameter Test conditions Min. Typ. Max. Unit** td(on) Turn-on delay time - 64 - ns tr Rise time VDD = 48 V, ID = 1.5 A, - 5.3 - ns RG = 4.7 Ω , VGS = 10 V td(off) Turn-off delay time (see _Figure 13_ ) - 14 - ns tf Fall time - 3.7 - ns ~~=e~~ _Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed._ 

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**STL12P6F6** 

**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||12<br>48|A<br>A|
|VSD (2)|Forward on voltage|VGS= 0, ISD= 3 A|-||1.1|V|
|trr|Reverse recovery time|ISD= 5 A, di/dt = 100 A/µs<br>VDD= 16 V, Tj= 150 °C<br>(see_Figure 15_)|-|20||ns|
|Qrr|Reverse recovery charge||-|17.8||nC|
|IRRM|Reverse recovery current||-|1.8||A|



1. Pulse width limited by safe operating area. 

2. Pulse duration = 300 µs, duty cycle 1.5% 

_Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed._ 

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**STL12P6F6** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**==> picture [192 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15340v1<br>ID<br>(A) V GS = 10 V<br>[|<br>25<br>— i<br>20 ZA VGS= 6 V<br>Aes<br>15<br>VGS= 5 V<br>10 ,f-——ae<br>5 | 7<br>VGS= 4 V<br>ff —<br>0 _—— $—$$_—<br>0 5 10 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 5. Transfer characteristics** 

**==> picture [191 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15346v1<br>ID<br>(A)<br>pu<br>25 VDS= 9 V<br>aan<br>| 4nnil<br>20<br>A<br>15 Sa ee<br>10<br>5<br>|<br>0 ALT f TE<br>2 3 4 5 6 7 8 9 10 VGS(V)<br>**----- End of picture text -----**<br>


**Figure 6. Gate charge vs gate-source voltage** 

**==> picture [196 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15341v1<br>(V)<br>| VDD=30V _f<br>10 | ID=3A Lf<br>| {|<br>8 ee ee ee Ae<br>ee ee Ae<br>6 ee Ae eee<br>4<br>a<br>2 Pf |<br>0 /—Zree<br>0 2 4 6 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 7. Static drain-source on-resistance** 

**==> picture [204 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15350v1<br>RDS(on)<br>(mΩ)<br>VGS=10V<br>180<br>160<br>—S<br>140 ERRORLit<br>120100 DRRRRRREE<br>1 2 3 4 5 6 7 8 9 ID(A)<br>**----- End of picture text -----**<br>


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**STL12P6F6** 

**Electrical characteristics** 

**Figure 8. Capacitance variations** 

## **Figure 9. Normalized V(BR)DSS vs temperature** 

**==> picture [425 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15342v1 V(BR)DSS AM15349v1<br>(pF) (norm)<br>400<br>KOOL 1.15 TT ID = 1mA TT<br>350 Ciss<br>PPR HR yp<br>300 1.10<br>250<br>Fassesenserz 1.05 ATEDAO<br>200 CREPE oi<br>150 1<br>100<br>| eee<br>0.95<br>CSB Z<br>50 Coss<br>0 === Crss 0.90 LEE ELL<br>0 10 20 30 40 50 VDS(V) -55 -30 -5 20 45 70 95 120 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage vs temperature** 

**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [434 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15344v1 RDS(on) AM15350v1<br>(norm) (norm)<br>2<br>1.10 PLE LEELA [TT VGS=10V  iti tt ty<br>2 1.8 “CX<br>ID=250 µA<br>1 1.6<br>1.4<br>0.90 PNP N pS/<br>1.2<br>0.80 1<br>0.8<br>0.70 CHA CEE CE<br>~ || 0.6  Eee<br>0.60 PELE EEL LE 0.4 eTFC EEE EEC<br>-55 -30 -5 20 45 70 95 120 TJ(°C) -55 -30 -5 20 45 70 95 120 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Source-drain diode forward characteristics** 

**==> picture [196 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15345v1<br>(V)<br>TJ=-55°C<br>1.05<br>po |<br>0.95 TJ=25°C<br>ae<br>0.85 ear<br>0.75 TJ=175°C<br>0.65 aie<br>ee<br>rT<br>0.55 ct ct<br>2 4 6 8 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [261 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM11255v1 AM11256v1<br>**----- End of picture text -----**<br>


## **Figure 15. Test circuit for inductive load switching and diode recovery times** 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM11257v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STL12P6F6** 

**Package mechanical data** 

## **Figure 16. PowerFLAT™ 5x6 type S-R drawing** 

**==> picture [270 x 457] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 8<br>Bottom View<br>Pin 1<br>identification<br>4 = 1<br>Side View<br>4 1 Pin 1<br>identification<br>|<br>Top View<br>He<br>5 8<br>8231817_Rev_I_type S-R<br>.<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8. PowerFLAT 5x6 type S-R mechanical data** 

||**Table 8. PowerFLAT 5x6 type S-R mechanical dataype S-R mechanical datae S-R mechanical data**|**Table 8. PowerFLAT 5x6 type S-R mechanical dataype S-R mechanical datae S-R mechanical data**|**Table 8. PowerFLAT 5x6 type S-R mechanical dataype S-R mechanical datae S-R mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|0.80|~~ee~~|1.00|
|A1<br>~~a~~|0.02||0.05|
|A2<br>~~a~~||0.25||
|b<br>~~a~~|0.30||0.50|
|D<br>~~a~~|5.00|5.20|5.40|
|D2<br>~~a~~<br>~~es~~|4.11||4.31|
|E<br>~~es~~|5.95|6.15|6.35|
|e<br>~~es~~<br>~~a~~||1.27||
|E2<br>~~a~~|3.50||3.70|
|E3<br>~~a~~|2.35||2.55|
|E4<br>~~a~~|0.40||0.60|
|E5<br>~~a~~<br>~~es~~|0.08||0.28|
|K<br>~~es~~|1.275||1.575|
|L<br>~~es~~<br>~~a~~|0.60||0.80|



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**STL12P6F6** 

**Package mechanical data** 

## **Figure 17. Recommended footprint (dimensions in millimeters)** 

Footprint 

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**STL12P6F6** 

**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**==> picture [168 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 18. PowerFLAT™ 5x6 tape [(a)]<br>**----- End of picture text -----**<br>


**==> picture [437 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
P 2 P 0<br>(0.30 T ±0.05) Do 2.0±0.1 (I) 4.0±0.1 (II) E1<br>Ø1.55±0.05 Y 1.75±0.1<br>TL<br>D1<br>Ø1.5 MIN.<br>CL<br>Y<br>P1(8.00±0.1) Ao(6.30±0.1)<br>i Ko (1.20±0.1)<br>SECTION Y-Y<br>(I) Measured from centerline of sprocket holeto centerline of pocket. Base and bulk quantity 3000 pcs<br>(II) Cumulative tolerance of 10 sprocket<br>holes is ± 0.20 .<br>(III) Measured from centerline of sprocket<br>hole to centerline of pocket.<br>8234350_Tape_rev_C<br>REF.R0.50<br>REF 0.20<br>))((IIIF5.50±0.1 )(W12.00±0.3<br>5.30±0.1)(Bo<br>**----- End of picture text -----**<br>


**Figure 19. PowerFLAT™ 5x6 package orientation in carrier tape** 

**==> picture [35 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pin 1<br>identification<br>**----- End of picture text -----**<br>


a. All dimensions are in millimeters. 

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**STL12P6F6** 

**Packaging mechanical data** 

## **Figure 20. PowerFLAT™ 5x6 reel** 

**==> picture [388 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
R0.60<br>W3<br>PART NO. 11.9/15.4<br>1 .90<br>2.50<br>W2<br>18.4 (max)<br>R25.00<br>   ØN    A<br>4.00 178(±2.0) 330 (+0/-4.0)<br>2.50<br>ESD LOGO<br>W1<br>12.4 (+2/-0)<br>ØA<br>QL<br>R1.10<br>Ø21.2<br>All dimensions are in millimeters<br>13.00<br>CORE DETAIL<br>8234350_Reel_rev_C<br>128<br>77<br>ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES<br>2.20<br>06PS<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Mar-2013|1|First release.|
|14-Jul-2014|2|– Modified: ID, and IDMvalues in_Table 2_<br>– Modified: the entire typical values in_Table 6_<br>– Modified: ISDand ISDMmax values in_Table 7_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Section 4: Package mechanical data_<br>– Minor text changes|



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**STL12P6F6** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

16/16 DocID024400 Rev 2 



## Links

- [View this product on Novapart](https://novapart.co/products/STL12P6F6/power-mosfet-p-channel-60-v-12-a-013-ohm-powerflat)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stl12p6f6/mosfet-p-ch-60v-12a-175deg-c-75w/dp/3132749)
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