# Power MOSFET, N Channel, 60 V, 47 A, 0.01 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:3132748/)

**URL**: https://novapart.co/products/STL11N6F7/power-mosfet-n-channel-60-v-47-a-001-ohm-powerflat
**SKU**: STL11N6F7
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1960
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | STripFET F7 |
| Power Dissipation | 48W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 48W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.01ohm |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 47A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132748/)

## **STL11N6F7** 

N-channel 60 V, 10 mΩ typ., 11 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data **Features Order code VDS RDS(on) max. ID** STL11N6F7 60 V 12 mΩ 11 A 1 2 3 4 **Features**  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity **PowerFLAT™ 3.3x3.3**  High avalanche ruggedness bd ~~ee~~ **Applications Figure 1: Internal schematic diagram**  Switching applications D(5, 6, 7, 8) 8 7 6 5 **Description** This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal G(4) capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1 2 3 4 AM15810v1 **Table 1: Device summary Order code Marking Package Packing** ~~——————~~ STL11N6F7 11N6F PowerFLAT™ 3.3x3.3 Tape and reel 

This is information on a product in full production. 

_www.st.com_ 

November 2015 

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|**Contents**<br>**STL11N6F7**|**Contents**<br>**STL11N6F7**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................... 3**|
|**2**|**Electrical characteristics ................................................................. 4**|
||2.1<br>Electrical characteristics (curve) ........................................................ 5|
|**3**|**Test circuits ...................................................................................... 7**|
|**4**|**Package mechanical data ................................................................ 8**|
||4.1<br>PowerFLAT 3.3x3.3 package information ......................................... 9|
|**5**|**Revision history .............................................................................. 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|60|V|
|VGS|Gate source voltage|±20|V|
|ID<br>_(1)_|Drain current (continuous) at TC= 25 °C|47|A|
||Drain current (continuous) at TC= 100 °C|30||
|IDM<br>_(1)(2)_|Drain current (pulsed)|188|A|
|ID<br>_(3)_|Drain current (continuous) at Tpcb= 25 °C|11|A|
||Drain current (continuous) at Tpcb= 100 °C|7||
|IDM<br>_(2)(3)_|Drain current (pulsed)|44|A|
|PTOT<br>_(1)_|Total dissipation at TC= 25 °C|48|W|
|PTOT<br>_(3)_|Total dissipation at Tpcb= 25 °C|2.9|W|
|TJ|Operating junction temperature|-55 to 150|°C|
|Tstg|Storage temperature|||



## **Notes:** 

- (1) This value is rated according to Rthj-c 

- (2) Pulse width limited by safe operating area 

- (3) This value is rated according to Rthj-pcb 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-pcb<br>_(1)_|Thermal resistancejunction-pcb max|42.8|°C/W|
|Rthj-case|Thermal resistancejunction-case max|2.6|°C/W|



## **Notes:** 

(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|ID= 1mA, VGS= 0 V|60|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V , VDS=60 V|||1|µA|
|IGSS|Gate-body leakage current|VGS= 20 V, VDS= 0 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|2||4|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 5.5 A||10|12|mΩ|



**Table 5: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 30 V, f = 1 MHz,VGS= 0 V|-|1035|-|pF|
|Coss|Output capacitance||-|450|-|pF|
|Crss|Reverse transfer<br>capacitance||-|53|-|pF|
|Qg|Totalgate charge|VDD= 30 V, ID= 11 A,<br>VGS= 10 V<br>(see_Figure 14: "Test circuit for gate_<br>_charge behavior"_)|-|17|-|nC|
|Qgs|Gate-source charge||-|5.7|-|nC|
|Qgd|Gate-drain charge||-|5.7|-|nC|



## **Table 6: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay<br>time|VDD= 30 V, ID= 5.5 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Test circuit for resistive_<br>_load switching times"_)|-|14.5|-|ns|
|tr|Rise time||-|15.3|-|ns|
|td(off)|Turn-off delay<br>time||-|19.4|-|ns|
|tf|Fall time||-|8|-|ns|



**Table 7: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VSD<br>_(1)_|Forward on<br>voltage|ISD= 11 A, VGS= 0 V|-||1.2|V|
|trr|Reverse<br>recovery time|ID= 11 A, di/dt = 100 A/µs<br>VDD= 48 V<br>(see_Figure 15: "Test circuit for inductive_<br>_load switching and diode recovery_<br>_times"_)|-|26.8||ns|
|Qrr|Reverse<br>recoverycharge||-|14.2||nC|
|IRRM|Reverse<br>recovery current||-|1.06||A|



**Notes:** 

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**Electrical characteristics** 

- (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

## **2.1 Electrical characteristics (curve)** 

**==> picture [386 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Safe operating area  Figure 3: Thermal impedance<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics Figure 5: Transfer characteristics** 

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**==> picture [157 x 142] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance** 

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**----- Start of picture text -----**<br>
Electrical characteristics STL11N6F7<br>Figure 9: Normalized gate threshold voltage<br>Figure 8: Capacitance variations<br>vs temperature<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 10: Normalized on-resistance vs  Figure 11: Normalized V(BR)DSS vs<br>temperature  temperature<br>**----- End of picture text -----**<br>


**Figure 12: Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load<br>Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 PowerFLAT 3.3x3.3 package information** 

**Figure 19: PowerFLAT™ 3.3x3.3 package outline** 

**==> picture [406 x 574] intentionally omitted <==**

**----- Start of picture text -----**<br>
BOTTOM VIEW<br>SIDE VIEW<br>TOP VIEW<br>8465286_A<br>**----- End of picture text -----**<br>


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## **Package information** 

|**formation**|**formation**|**formation**|**STL11N6F7**|
|---|---|---|---|
|**Table 8: PowerFLAT™ 3.3x3.3package mechanical**|||**data**|
|**Dim.**||**mm**||
||**Min.**|**Typ.**|**Max.**|
|A|0.70|0.80|0.90|
|b|0.25|0.30|0.39|
|c|0.14|0.15|0.20|
|D|3.10|3.30|3.50|
|D1|3.05|3.15|3.25|
|D2|2.15|2.25|2.35|
|e|0.55|0.65|0.75|
|E|3.10|3.30|3.50|
|E1|2.90|3.00|3.10|
|E2|1.60|1.70|1.80|
|H|0.25|0.40|0.55|
|K|0.65|0.75|0.85|
|L|030|0.45|0.60|
|L1|0.05|0.15|0.25|
|L2|||0.15|
|θ|8°|10°|12°|



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**Package information** 

**Figure 20: PowerFLAT™ 3.3x3.3 recommended footprint** 

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**----- Start of picture text -----**<br>
8465286_footprint<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revisi**<br>**on**|**Changes**|
|---|---|---|
|21-Jul-2015|1|First release.|
|17-Nov-2015|2|Document status changed from preliminary to production data.<br>Updated title and features in cover page<br>Updated_Table 2: "Absolute maximum ratings"_and_Section 4: "Electrical_<br>_characteristics"_.<br>Added_Section 4.1: "Electrical characteristics (curve)"_.<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stl11n6f7/mosfet-n-ch-60v-47a-150deg-c-48w/dp/3132748)
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