# Power MOSFET, N Channel, 30 V, 9 A, 0.015 ohm, PowerFLAT, Surface Mount

![Product image](https://novapart.co/image/farnell:2354523/)

**URL**: https://novapart.co/products/STL10N3LLH5/power-mosfet-n-channel-30-v-9-a-0015-ohm-powerflat
**SKU**: STL10N3LLH5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3020
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 50W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PowerFLAT |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 0.015ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2354523/)

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## **STL10N3LLH5** N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ 3.3x3.3 STripFET™ V Power MOSFET 

## **Features** 

|**Order code**|**VDSS**|**RDS(on)**<br>**max**|**ID**<br>|
|---|---|---|---|
|STL10N3LLH5|30 V|< 0.019Ω|9 A(1)|



1. The value is rated according Rthj-pcb 

- RDS(on) * Qg industry benchmark 

**==> picture [83 x 57] intentionally omitted <==**

- Extremely low on-resistance RDS(on) 

- Very low switching gate charge 

**==> picture [92 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
PowerFLAT™ 3.3x3.3<br>**----- End of picture text -----**<br>


- High avalanche ruggedness 

- Low gate drive power losses 

## **Applications** 

- Switching applications 

- Automotive 

## **Description** 

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 

## **Figure 1. Internal schematic diagram** 

**==> picture [221 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2 3 4<br>S S S G<br>D D D D<br>8 7 6 5<br>BOTTOM VIEW<br>AM10124V1<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STL10N3LLH5|10N3L|PowerFLAT™ 3.3x3.3|Tape and reel|



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_www.st.com_ 

**Contents** 

**STL10N3LLH5** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|---|---|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|30|V|
|VGS|Gate-source voltage|± 22|V|
|ID<br>(1)|Drain current (continuous) at TC= 25 °C|9|A|
|ID<br>(1)|Drain current (continuous) at TC=100 °C|6|A|
|IDM<br>(2)|Drain current (pulsed)|36|A|
|PTOT|Total dissipation at TC= 25 °C|50|W|
||Derating factor|0.4|W/°C|
|PTOT<br>(1)|Total dissipation at Tpcb= 25 °C|2|W|
||Derating factor|0.02|W/°C|
|TJ<br>Tstg|Operating junction temperature<br>storage temperature|-55 to 150|°C|



1. The value is rated according Rthj-pcb 

2. Pulse width limited by safe operating area. 

## **Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|2.5|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb|42.8|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb (steady state)|62.5|°C/W|



1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec 

## **Table 4. Avalanche data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAV<br>(1)|Not-repetitive avalanche current|7.5|A|
|EAS<br>(2)|Thermal resistance junction-pcb|150|mJ|



1. Pulse width limited by TJmax. 

2. Starting TJ = 25 °C, ID=IAV, VDD = 21 V 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage (VGS= 0)|ID= 250 µA|30|||V|
|IDSS|Zero gate voltage drain<br>current (VGS= 0)|VDS= 30 V,<br>VDS= 30 V, TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate body leakage current<br>(VDS= 0)|VGS= ± 22 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1||2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 4.5 A<br>VGS= 4.5 V, ID= 4.5 A||15<br>19|19<br>22|mΩ<br>mΩ|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25 V, f=1 MHz,<br>VGS=0|-|724<br>132<br>20|900(1)<br>165(1)<br>25(1)|pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=15 V, ID= 9 A<br>VGS=4.5 V<br>_(see Figure 14)_|-|5<br>2<br>2|6(1)<br>2.5(1)<br>2.5(1)|nC<br>nC<br>nC|
|RG|Gate input resistance|f=1 MHz Gate DC Bias = 0<br>Test signal level = 20 mV<br>Open drain|-||3.3|Ω|



1. Max values not tested 

## **Table 7. Switching times[(1)]** 

|**Table 7.**|**Switching times(1)**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD=15 V, ID= 4.5 A,<br>RG=4.7Ω,  VGS= 10 V<br>_(see Figure 13)_|-|4<br>4.2<br>21<br>3.5|5<br>5.2<br>26<br>4.25|ns<br>ns<br>ns<br>ns|



1. Max values not tested 

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**Electrical characteristics** 

## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||9|A|
|ISDM<br>(1)|Source-drain current (pulsed)||-||36|A|
|VSD<br>(2)|Forward on voltage|ISD= 9 A, VGS=0|-||1.1|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 9 A,<br>di/dt = 100 A/µs,<br>VDD=20 V, Tj=150 °C<br>_(see Figure 18)_|-|21<br>10<br>1||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 2. Safe operating area Figure 3. Thermal impedance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ID AM03821v1<br>(A)<br>100 Operation in this area is<br>Limited by max RDS(on)<br>10<br>10ms<br>1<br>100ms<br>Tj=150°C 1s<br>0.1 Tc=25°C<br>Single<br>pulse<br>0.01<br>0.1 1 10 VDS(V)<br>Figure 4. Output characteristics Figure 5. Transfer characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
AM04954v1 AM04955v1<br>ID ID<br>(A) VGS=10V (A)<br>VDS=4V<br>100 100<br>80 80<br>5V<br>60 60<br>4V<br>40 40<br>20 20<br>3V<br>0 0<br>0 1 2 3 4 VDS(V) 0 2 4 6 8 10 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance** 

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**----- Start of picture text -----**<br>
BVDSS AM04956v1 RDS(on) AM03823v1<br>(norm) (Ω)<br>ID=1mA ID=4.5A<br>VGS=10V<br>1.10 25<br>1.05 20<br>1.00 15<br>0.95 10<br>0.90 5<br>-50 0 50 100 150 TJ(°C) 0 2 4 6 8 10 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**----- Start of picture text -----**<br>
VGS AM03817v1 C AM03816v1<br>(V) (pF)<br>f=1MHz<br>VDD=15V<br>1000<br>ID=9A<br>10<br>800 Ciss<br>8<br>600<br>6<br>400<br>4<br>2 200<br>Coss<br>0 0 Crss<br>0 2 4 6 8 10 Qg(nC) 0 10 20 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

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**----- Start of picture text -----**<br>
VGS(th) AM04960v1 RDS(on) AM04961v2<br>(norm) ID=250µA (norm)<br>1.2 ID=4.5A<br>1.8<br>VGS=10V<br>1.1<br>1.6<br>1.0<br>0.9 1.4<br>0.8 1.2<br>0.7<br>1.0<br>0.6<br>0.8<br>0.5<br>0.4 0.6<br>-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


## **Figure 12. Source-drain diode forward characteristics** 

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**----- Start of picture text -----**<br>
VSD AM03818v1<br>(V)<br>TJ=-50°C<br>0.9<br>0.8<br>TJ=25°C<br>0.7<br>TJ=150°C<br>0.6<br>0.5<br>0.4<br>0 2 4 6 8 10 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

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**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load switching and diode recovery times** 

**Figure 16. Unclamped inductive load test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 17. Unclamped inductive waveform** 

**Figure 18. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

**Table 9. PowerFLAT™ 3.3 x 3.3 mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|0.80|0.90|1.00|
|A1|0||0.05|
|A3||0.20||
|b|0.23||0.38|
|D|3.20|3.30|3.40|
|D2|2.50||2.75|
|E|3.20|3.30|3.40|
|E2|1.25||1.50|
|e||0.65||
|L|0.30||0.50|



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**Package mechanical data** 

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**----- Start of picture text -----**<br>
Figure 19. PowerFLAT™ 3.3 x 3.3 drawing<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7635509_E<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Figure 20. PowerFLAT™ 3.3 x 3.3 recommended footprint** 

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**----- Start of picture text -----**<br>
7635509_E_footprint<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Aug-2011|1|First release.|



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