# Power MOSFET, N Channel, 30 V, 55 A, 0.01 ohm, I2PAK, Through Hole

![Product image](https://novapart.co/image/farnell:4036318/)

**URL**: https://novapart.co/products/STI55NF03L/power-mosfet-n-channel-30-v-55-a-001-ohm-i2pak
**SKU**: STI55NF03L
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4580
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STripFET II Series |
| Qualification | - |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | I2PAK |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4036318/)

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## **STI55NF03L** N-channel 30 V, 0.01 Ω, 55 A, I²PAK STripFET™ II Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|---|
|STI55NF03L|30 V|< 0.013Ω|55 A|



- Optimized for high switching operation 

- Low gate charge 

- Logic level gate drive 

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## **Application** 

- Switching applications 

   - Automotive 

## **Description** 

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps allowing  remarkable manufacturing reproducibility. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STI55NF03L|55NF03L|I²PAK|Tube|



_www.st.com_ 

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**Contents** 

**STI55NF03L** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|30|V|
|VGS|Gate-source voltage|± 16|V|
|ID|Drain current (continuous) at TC= 25 °C|55|A|
|ID|Drain current (continuous) at TC= 100 °C|39|A|
|IDM<br>(1)|Drain current (pulsed)|220|A|
|PTOT|Total dissipation at TC= 25 °C|80|W|
||Derating factor|0.53|W/°C|
|EAS (2)|Single pulse avalanche energy|120|mJ|
|Tstg|Storage temperature|– 60 to 175|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area 

2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case<br>|Thermal resistance junction-case max|1.875|°C/W|
|Rthj-a<br>|Thermal resistance junction-ambient max|62.5|°C/W|
|Tl<br> <br>|Maximum lead temperature for soldering<br>purpose|300|°C|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

## (TCASE = 25 °C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown voltage|ID= 250 µA, VGS= 0|30|||V|
|IDSS|Zero gate voltage<br>Drain current (VGS= 0)|VDS= max rating<br>VDS= max rating,TC=125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 16 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|1.5||2.5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 27.5 A<br>VGS= 4.5 V, ID= 27.5 A||0.01<br>0.013|0.013<br>0.02|Ω|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0||1265<br>435<br>115||pF<br>pF<br>pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 24V, ID= 55 A,<br>VGS= 4.5 V<br>_(see Figure 14)_||20<br>7<br>10|27|nC<br>nC<br>nC|



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**Electrical characteristics** 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD= 15 V, ID= 27.5 A<br>RG= 4.7ΩVGS= 10 V<br>_(see Figure 13)_||28<br>400||ns<br>ns|
|td(off)<br>tf|Turn-off-delay time<br>Fall time|VDD= 15 V, ID= 27.5 A<br>RG= 4.7Ω,VGS= 10 V<br>_(see Figure 13)_||25<br>50||ns<br>ns|



## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current<br>(pulsed)||||55<br>220|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 55 A, VGS= 0|||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 55 A, VDD= 30 V<br>di/dt = 100 A/µs,<br>Tj= 150 °C<br>_(see Figure 15)_||70<br>160<br>4.5||ns<br>nC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

## **Figure 6. Normalized BVDSS vs temperature** 

**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

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## **Figure 12. Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit resistive load** 

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit** 

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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Table 8. I²PAK (TO-262) mechanical data** 

|**Table 8.**|**I²PAK(TO-262) mechanical data**|**I²PAK(TO-262) mechanical data**|**I²PAK(TO-262) mechanical data**|
|---|---|---|---|
|**DIM.**|**mm.**|||
||**min.**|**typ**|**max.**|
|A|4.40||4.60|
|A1|2.40||2.72|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.49||0.70|
|c2|1.23||1.32|
|D|8.95||9.35|
|e|2.40||2.70|
|e1|4.95||5.15|
|E|10||10.40|
|L|13||14|
|L1|3.50||3.93|
|L2|1.27||1.40|



## **Figure 19. I²PAK (TO-262) drawing** 

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0004982_Rev_H<br>**----- End of picture text -----**<br>


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**Revision history** 

- **5 Revision history** 

|**Table 9.**<br>**Document revision history**|**Table 9.**<br>**Document revision history**|**Table 9.**<br>**Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|18-May-2011|1|First release|



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