# Power MOSFET, N Channel, 950 V, 6 A, 1 ohm, H2PAK-2, Surface Mount
**URL**: https://novapart.co/products/STH6N95K5-2/power-mosfet-n-channel-950-v-6-a-1-ohm-h2pak-2
**SKU**: STH6N95K5-2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9740
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:950V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H2PAK-2 |
| Drain Source Voltage Vds | 950V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3132747/)
## **STH6N95K5-2**
N-channel 950 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a H²PAK-2 package
Datasheet - production data
## **Features**
**==> picture [405 x 327] intentionally omitted <==**
**----- Start of picture text -----**
Order code VDS RDS(on) max. ID PTOT
STH6N95K5-2 950 V 1.25 Ω 6 A 110 W
.
2 Industry’s lowest RDS(on) x area
& 3 a
Industry’s best figure of merit (FoM)
1
Ultra low gate charge
100% avalanche tested
H2PAK -2 Zener-protected
Applications
Figure 1: Internal schematic diagram Switching applications
D(TAB)
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
G(1) vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(2, 3)
AM15557a.v3
**----- End of picture text -----**
**Figure 1: Internal schematic diagram**
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STH6N95K5-2|6N95K5|H²PAK-2|Tape and reel|
This is information on a product in full production.
_www.st.com_
March 2015
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|**Contents**
**STH6N95K5-2**|**Contents**
**STH6N95K5-2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package mechanical data ............................................................. 10**|
||4.1
Package mechanical data ............................................................... 11|
|**5**|**Packing information ...................................................................... 14**|
|**6**|**Revision history ............................................................................ 16**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 30|V|
|ID|Drain current at TC= 25 °C|6|A|
|ID|Drain current at TC= 100 °C|3.8|A|
|IDM_(1)_|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|IAR_(2)_|Max current duringrepetitive or singlepulse avalanche|3|A|
|EAS_(3)_|Singlepulse avalanche energy|90|mJ|
|dv/dt_(4)_|Peak diode recoveryvoltage slope|4.5|V/ns|
|dv/dt_(5)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tj|Operating junction temperature|- 55 to 150|°C|
|Tstg|Storage temperature|||
## **Notes:**
- (1)Pulse width limited by safe operating area.
- (2)Pulse width limited by Tjmax.
- (3)Starting Tj = 25 °C, ID = IAS, VDD = 50 V.
(4)ISD ≤ 6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.
- (5)VDS ≤ 760 V.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|1.14|°C/W|
|Rthj-pcb_(1)_|Thermal resistancejunction-pcb max|30||
## **Notes:**
- (1)When mounted on 1 inch² FR-4 board, 2 oz Cu.
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**STH6N95K5-2**
**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
**Table 4: On/off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|950|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 950 V|||1|µA|
|||VGS= 0 V, VDS= 950 V,
Tc= 125 °C|||50|µA|
|IGSS|Gate bodyleakage current|VDS= 0 V, VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VCS= 10 V, ID= 3 A||1|1.25|Ω|
|||**Table 5: Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VGS= 0 V, VDS= 100 V, f = 1 MHz|-|450|-|pF|
|Coss|Output capacitance||-|30|-||
|Coss|Output capacitance||-|1.6|-||
|Co(tr)_(1)_|Equivalent
capacitance, time-
related|VGS= 0 V, VDS= 0 to 760 V|-|45|-|pF|
|Co(er)_(2)_|Equivalent
capacitance, energy-
related||-|19|-||
|RG|Intrinsic gate
resistance|f = 1 MHz, ID=0 A|-|7|-|Ω|
|Qg|Totalgate charge|VDD= 760 V, ID= 6 A, VGS= 10 V
(see_Figure 16: "Gate charge test_
_circuit"_)|-|13|-|nC|
|Qgs|Gate-source charge||-|3|-||
|Qgd|Gate-drain charge||-|7|-||
## **Notes:**
(1)Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
(2)Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS.
**Table 6: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 475 V, ID= 3 A,
RG= 4.7 Ω, VGS= 10 V|-|12|-|ns|
|tr|Rise time||-|12|-|ns|
|td(off)|Turn-off-delaytime||-|33|-|ns|
|tf|Fall time||-|21|-|ns|
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**Electrical characteristics**
**Table 7: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||6|A|
|ISDM_(1)_|Source-drain current (pulsed)||-||24|A|
|VSD_(2)_|Forward on voltage|ISD= 6 A, VGS= 0|-||1.6|V|
|trr|Reverse recoverytime|ISD= 6 A,
di/dt = 100 A/µs
VDD= 60 V|-|372||ns|
|Qrr|Reverse recoverycharge||-|4||µC|
|IRRM|Reverse recoverycurrent||-|22||A|
|trr|Reverse recoverytime|ISD= 6 A,
di/dt = 100 A/µs
VDD= 60 V, Tj= 150 °C|-|522||ns|
|Qrr|Reverse recoverycharge||-|5||µC|
|IRRM|Reverse recovery current||-|20||A|
## **Notes:**
- (1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
**Table 8: Gate-source Zener diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ± 1mA, ID=0|30|-|-|V|
The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**==> picture [391 x 166] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Safe operating area Figure 3: Thermal impedance
ID GIPG220120151710ALS K CG20930
(A)
δ = 0.5
10
δ = 0.2
100µs δ = 0.1
1 10 [-1]
1ms
10ms Zδ = tZδ th th = = k R = k R t p p// Ƭ Ƭ thj-C� thj-C�
0.1 δ = 0.05
δ = 0.02
0.01 TT Single pulsejC =150°C=25°C 10 [-2] SINGLE PULSE δ = 0.01 tt pp ƬƬ
0.1 1 10 100 VDS(V) 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp(s)
Operation in this area
DS(on)
is limited by max R
**----- End of picture text -----**
**==> picture [380 x 166] intentionally omitted <==**
**----- Start of picture text -----**
Figure 4: Output characteristics Figure 5: Transfer characteristics
(A)ID VGS=10V AM07108v1 (A)ID AM07109v1
12
8
10
6
8
7V VDS=15V
6 4
4
6V 2
2
5V
0 0
0 5 10 15 20 25 VDS(V) 0 2 4 6 8 VGS(V)
**----- End of picture text -----**
**==> picture [409 x 166] intentionally omitted <==**
**----- Start of picture text -----**
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
V(V)GS AM07110v1 V(V)DS (Ohm)RDS(on) AM07111v1
12 V DS 700 1.03
1.01
600
10
VDD=760V 500 0.99 V GS =10V
8 I D =6A 0.97
400
0.95
6
300
0.93
4 200 0.91
2 100 0.89
0 0 0.87
0 2 4 6 8 10 12 14 Qg(nC) 0.5 1.0 1.5 2.0 2.5 3.0 ID(A)
**----- End of picture text -----**
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**Electrical characteristics**
**==> picture [386 x 156] intentionally omitted <==**
**----- Start of picture text -----**
Figure 8: Capacitance variations Figure 9: Output capacitance stored energy
(pF)C AM07112v1 E(µJ)oss AM07113v1
20
1000
Ciss 16
100 12
10 Coss 8
Crss 4
1 ESS
0.1 1 10 100 VDS(V) 0 0 200 400 600 800 VDS(V)
**----- End of picture text -----**
**==> picture [392 x 167] intentionally omitted <==**
**----- Start of picture text -----**
Figure 10: Normalized gate threshold voltage Figure 11: Normalized on-resistance vs
vs temperature temperature
VGS(th) AM07114v1 RDS(on) AM07115v1
(norm) (norm)
1.2
2.5
1.1
1.0 ID=100 µA 2.0 V GS =10V
0.9
1.5
0.8
0.7 1.0
0.6
0.5
0.5
0.4 0
-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 Tj(°C)
**----- End of picture text -----**
## **Figure 12: Source-drain diode forward Figure 13: Normalized V(BR)DSS vs characteristics temperature**
**==> picture [365 x 146] intentionally omitted <==**
**----- Start of picture text -----**
V(V)SD V(norm)(BR)DSS AM07116v1
1.2
0.95
1.1 I D =1 mA
0.85
1.0
0.75
0.9
0.65
0.8
0.55 0.7
2.0 3.0 4.0 5.0 6.0 ISD(A) -75 -25 25 75 125 Tj(°C)
**----- End of picture text -----**
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**STH6N95K5-2**
**Electrical characteristics**
**==> picture [227 x 183] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Maximum avalanche energy vs starting Tj
EAS AM07117v1
(mJ)
100
80
VDDID=3 A=50 V
60
40
20
0
0 20 40 60 80 100 120 140 Tj(°C)
**----- End of picture text -----**
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**Test circuits**
## **3 Test circuits**
**==> picture [463 x 185] intentionally omitted <==**
**----- Start of picture text -----**
Figure 15: Switching times test circuit for resistive Figure 16: Gate charge test circuit
load VDD
12 V 47 kΩ
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS 100 Ω D.U.T.
2.7 k Ω VG
2200 μ F
47 kΩ
1 kΩ
PW
AM01469v1
**----- End of picture text -----**
**Figure 17: Test circuit for inductive load switching and diode recovery times**
**==> picture [221 x 131] intentionally omitted <==**
**----- Start of picture text -----**
A A A
D
FAST L=100 µH
G D.U.T. DIODE
S B 3.3 1000
25 Ω B B D µF µF VDD
G D.U.T.
RG S
AM01470v1
**----- End of picture text -----**
**Figure 18: Unclamped inductive load test circuit**
**==> picture [161 x 147] intentionally omitted <==**
**Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform**
**==> picture [446 x 150] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS t on toff
t d(on) t r t d(off) t f
VD
90% 90%
I DM
10%
I D 0 10% VDS
VDD VDD
90%
VGS
AM01472v1 0 10% AM01473v1
**----- End of picture text -----**
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**Package mechanical** data
## **4 Package mechanical data**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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**Package mechanical** data
## **4.1 Package mechanical data**
**Figure 21: H²PAK-2 outline**
**==> picture [406 x 597] intentionally omitted <==**
**----- Start of picture text -----**
8159712_D
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**==> picture [91 x 8] intentionally omitted <==**
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**==> picture [29 x 8] intentionally omitted <==**
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11/17
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**STH6N95K5-2**
**Package mechanical** data
**Table 9: H²PAK-2 mechanical data**
|||**mm**||
|---|---|---|---|
|**Dim.**||||
||**Min.**|**Typ.**|**Max.**|
|||||
|A|4.30|-|4.80|
|A1|0.03||0.20|
|C|1.17||1.37|
|e|4.98||5.18|
|E|0.50||0.90|
|F|0.78||0.85|
|H|10.00||10.40|
|H1|7.40||7.80|
|L|15.30||15.80|
|L1|1.27||1.40|
|L2|4.93||5.23|
|L3|6.85||7.25|
|L4|1.5||1.7|
|M|2.6||2.9|
|R|0.20||0.60|
|V|0°||8°|
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**Package mechanical** data
**Figure 22: H²PAK-2 recommended footprint**
**==> picture [406 x 389] intentionally omitted <==**
**----- Start of picture text -----**
8159712_D
**----- End of picture text -----**
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**Packing information**
## **5 Packing information**
**Figure 23: Tape outline**
**==> picture [407 x 338] intentionally omitted <==**
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**Packing information**
**Figure 24: Reel outline**
**==> picture [406 x 258] intentionally omitted <==**
**----- Start of picture text -----**
T
REE L DIMENS IONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius At hub
Tape start
**----- End of picture text -----**
**Table 10: Tape and reel mechanical data**
||**Tape**|||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**m**|**m**
**Max.**||**mm**||
||||**Dim.**|||
||**Min.**|||**Min.**|**Max.**|
|||||||
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|0.35
24.3||||
|T|0.25|||||
|W|23.7|||||
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**STH6N95K5-2**
**Revision history**
## **6 Revision history**
**Table 11: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|23-Jan-2015|1|First release.|
|04-Feb-2015|2|Updated_Section 2: "Electrical characteristics"_|
|12-Mar-2015|3|Document status changed from preliminary to producion data.|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2015 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STH6N95K5-2/power-mosfet-n-channel-950-v-6-a-1-ohm-h2pak-2)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/sth6n95k5-2/mosfet-n-ch-950v-6a-150deg-c-110w/dp/3132747)
---
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