# Power MOSFET, N Channel, 600 V, 36 A, 0.07 ohm, H2PAK-2, Surface Mount

![Product image](https://novapart.co/image/farnell:3011599/)

**URL**: https://novapart.co/products/STH47N60DM6-2AG/power-mosfet-n-channel-600-v-36-a-007-ohm-h2pak-2
**SKU**: STH47N60DM6-2AG
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.2200
**Stock**: 10+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh DM6 |
| Qualification | AEC-Q101 |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H2PAK-2 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3011599/)

## **STH47N60DM6-2AG** 

Automotive N-channel 600 V, 0.070 Ω typ., 36 A MDmesh™ DM6 Power MOSFET in an H²PAK-2 package 

Datasheet - preliminary data 

## **Features** 

||**Order code**<br>**VDS**|**RDS(on) max.**||**ID**|
|---|---|---|---|---|
|STH47N60DM6-2AG<br>600 V||0.080 Ω||36 A|
|<br>|Designed for automotive applications<br>Fast-recovery body diode||Fr|Fr|



- Lower RDS(on) x area vs previous generation 

- Low gate charge, input capacitance and resistance 

- 100% avalanche tested 

- Extremely dv/dt ruggedness 

- Zener-protected 

**Figure 1: Internal schematic diagram** 

- Excellent switching performance thanks to the extra driving source pin 

## **Applications** 

- Switching applications 

## **Description** 

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STH47N60DM6-2AG|47N60DM6|H²PAK-2|Tape and reel|



This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

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|**Contents**<br>**STH47N60DM6-2AG**|**Contents**<br>**STH47N60DM6-2AG**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1<br>H²PAK-2 package information ......................................................... 10|
||4.2<br>H²PAK-2 packing information .......................................................... 12|
|**5**|**Revision history ............................................................................ 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|36|A|
|ID|Drain current (continuous) at TC= 100 °C|22|A|
|ID_(1)_|Drain current (pulsed)|137|A|
|PTOT|Total dissipation at TC= 25 °C|250|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|50|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|100||
|TJ|Operating junction temperature range|-55 to 150|°C|
|Tstg|Storage temperature range|||



## **Notes:** 

- (1)Pulse width limited by safe operating area 

(2)ISD ≤ 36 A, di/dt ≤ 800 A/μs, VDS peak < V(BR)DSS, VDD = 480 V 

- (3)VDS ≤ 480 V 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|0.5|°C/W|
|Rthj-pcb|Thermal resistance junction-pcb_(1)_|30||



## **Notes:** 

(1)When mounted on 1 inch² FR-4, 2 Oz copper board. 

**Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not repetitive<br>(pulse width limited byTjmax)|7|A|
|EAS|Single pulse avalanche energy<br>(startingTj= 25°C, ID= IAR, VDD= 100 V)|700|mJ|



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**STH47N60DM6-2AG** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 5: On/off-state** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||5|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C_(1)_|||100|µA|
|IGSS|Gate body leakage current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 18 A||0.070|0.080|Ω|



## **Notes:** 

(1)Defined by design, not subject to production test. 

**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|2350|-|pF|
|Coss|Output capacitance||-|160|-|pF|
|Crss|Reverse transfer<br>capacitance||-|2|-|pF|
|Coss<br>eq._(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|416|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz open drain|-|1.6|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 36 A,<br>VGS= 0 to 10 V<br>(see_Figure 14: "Test circuit_<br>_for gate charge behavior"_)|-|55|-|nC|
|Qgs|Gate-source charge||-|12|-|nC|
|Qgd|Gate-drain charge||-|31|-|nC|



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 18 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(see_Figure 13: "Test circuit_<br>_for resistive load switching_<br>_times"_and_Figure 18:_<br>_"Switching time waveform"_)|-|23|-|ns|
|tr|Rise time||-|5.5|-|ns|
|td(off)|Turn-off delaytime||-|57|-|ns|
|tf|Fall time||-|9|-|ns|



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**Electrical characteristics** 

**Table 8: Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||36|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||137|A|
|VSD_(2)_|Forward on voltage|ISD= 36 A, VGS= 0 V|-||1.6|V|
|trr|Reverse recoverytime|ISD= 36 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(see_Figure 15: "Test circuit_<br>_for inductive load switching_<br>_and diode recovery times"_)|-|115||ns|
|Qrr|Reverse recoverycharge||-|0.54||µC|
|IRRM|Reverse recovery current||-|9.5||A|
|trr|Reverse recoverytime|ISD= 36 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 15: "Test circuit_<br>_for inductive load switching_<br>_and diode recovery times"_)|-|210||ns|
|Qrr|Reverse recoverycharge||-|2.1||µC|
|IRRM|Reverse recovery current||-|20.4||A|



## **Notes:** 

- (1)Pulse width limited by safe operating area 

- (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

**Table 9: Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ±1 mA, ID= 0 A|±30|-|-|V|



The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [194 x 163] intentionally omitted <==**

**Figure 3: Thermal impedance** 

**==> picture [161 x 155] intentionally omitted <==**

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**----- Start of picture text -----**<br>
Figure 4: Output characteristics  Figure 5: Transfer characteristics<br>**----- End of picture text -----**<br>


**==> picture [451 x 190] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Gate charge vs gate-source voltage  Figure 7: Static drain-source on-resistance<br>**----- End of picture text -----**<br>


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**==> picture [437 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8: Capacitance variations  Figure 9: Normalized gate threshold voltage vs<br>temperature<br>**----- End of picture text -----**<br>


**Figure 10: Normalized on-resistance vs temperature** 

**==> picture [190 x 163] intentionally omitted <==**

**Figure 11: Normalized V(BR)DSS vs temperature** 

**==> picture [188 x 157] intentionally omitted <==**

**Figure 12: Source-drain diode forward characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 561] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Test circuit for resistive load  Figure 14: Test circuit for gate charge<br>switching times  behavior<br>Figure 15: Test circuit for inductive load  Figure 16: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 17: Unclamped inductive waveform  Figure 18: Switching time waveform<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**STH47N60DM6-2AG** 

**Package information** 

## **4.1 H²PAK-2 package information** 

**Figure 19: H²PAK-2 package outline** 

**==> picture [407 x 593] intentionally omitted <==**

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**Package information** 

**Table 10: H²PAK-2 package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.70|
|A1|0.03||0.20|
|C|1.17||1.37|
|e|4.98||5.18|
|E|0.50||0.90|
|F|0.78||0.85|
|H|10.00||10.40|
|H1|7.40||7.80|
|L|15.30||15.80|
|L1|1.27||1.40|
|L2|4.93||5.23|
|L3|6.85||7.25|
|L4|1.5||1.7|
|M|2.6||2.9|
|R|0.20||0.60|
|V|0°||8°|



**Figure 20: H²PAK-2 recommended footprint** 

**==> picture [407 x 259] intentionally omitted <==**

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**Package information** 

## **4.2 H²PAK-2 packing information** 

**Figure 21: Tape outline** 

**==> picture [407 x 338] intentionally omitted <==**

**Figure 22: Reel outline** 

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**----- Start of picture text -----**<br>
T<br>REE L DIMENS IONS<br>40 mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>G measured<br>Tape slot<br>In core for<br>Full radius At hub<br>Tape start<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 11: Tape and reel mechanical data** 

||**Tape**|||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**m**|**m**|**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Basequantity||1000|
|P2|1.9|2.1|Bulkquantity||1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Revision history** 

## **5 Revision history** 

**Table 12: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Aug-2017|1|Initial release|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/sth47n60dm6-2ag/mosfet-aec-q101-n-ch-600v-30a/dp/3011599)
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