# Power MOSFET, N Channel, 100 V, 180 A, 2100 µohm, H2PAK, Surface Mount

![Product image](https://novapart.co/image/farnell:2451118/)

**URL**: https://novapart.co/products/STH315N10F7-6/power-mosfet-n-channel-100-v-180-a-2100-ohm-h2pak
**SKU**: STH315N10F7-6
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9700
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 315W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | H2PAK |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 2100µohm |
| Gate Source Threshold Voltage Max | 3.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2451118/)

**STH315N10F7-2, STH315N10F7-6** Automotive-grade N-channel 100 V, 2.1 m Ω typ., 180 A STri FET™ F7 Power MOSFETs p **Datasheet** - **production data Features Order codes VDS RDS(on) max. ID** TAB TAB STH315N10F7-2 100 V 2.3 m Ω 180 A STH315N10F7-6 2 7 1 3 1 • Designed for automotive applications and AEC-Q101 qualified **H PAK-22 H PAK-62** • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity ~~oe~~ • High avalanche ruggedness **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

## **Description** 

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 

**Table 1. Device summary** 

|**Order codes**<br>~~ee~~|**Marking**<br>~~ee~~|**Package**<br>~~ee~~|**Packaging**<br>~~ee~~|
|---|---|---|---|
|STH315N10F7-2<br>315N10F7<br>STH315N10F7-6<br>~~ee~~|315N10F7<br>~~ee~~|H2PAK-2<br>~~ee~~|Tape and reel<br>~~ee~~|
|||H2PAK-6<br>~~ee~~||



This is information on a product in full production. 

1/19 _www.st.com_ 

**Contents** 

**STH315N10F7-2, STH315N10F7-6** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
||4.1<br>H2PAK-2, STH315N10F7-2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||4.2<br>H2PAK-6, STH315N10F7-6  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage|100|V|
|VGS|Gate-source voltage|± 20|V|
|ID<br>(1)|Drain current (continuous) at TC= 25°C|180|A|
|ID<br>(1)|Drain current (continuous) at TC=100°C|120|A|
|IDM<br>(2)|Drain current (pulsed)|720|A|
|PTOT|Total dissipation at TC= 25°C|315|W|
||Derating factor|2.1|W/°C|
|EAS<br>(3)|Single pulse avalanche energy<br>(TJ= 25 °C, L=0.55 mH, Ias= 65 A)|1|J|
|Tj<br>Tstg|Operating junction temperature<br>storage temperature|- 55 to 175|°C|



1. Current limited by package. 

2. Pulse width limited by safe operating area. 

3. Starting TJ=25°C, ID=60 A, VDD=50 V 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|0.48|°C/W|
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|35|°C/W|



1. When mounted on 1 inch² FR-4 board, 2oz Cu 

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**STH315N10F7-2, STH315N10F7-6** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0, ID= 250 µA|100|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0, VDS= 100 V|||1|µA|
|||VGS= 0, VDS= 100 V,<br>TC= 125°C|||100|µA|
|IGSS|Gate body leakage current|VDS= 0, VGS= 20 V|||100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2.5|3.5|4.5|V|
|RDS(on)|Static drain-source<br>on- resistance|VGS= 10 V, ID= 60 A||2.1|2.3|mΩ|



**Table 5. Dynamic** 

|||**Table 5. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VGS= 0, VDS= 25 V,<br>f = 1 MHz|-|12800|-|pF|
|Coss|Output capacitance||-|3500|-|pF|
|Crss|Reverse transfer<br>capacitance||-|170|-|pF|
|Qg|Total gate charge|VDD= 50 V, ID= 180 A,<br>VGS= 10 V<br>(see_Figure 14_)|-|180|-|nC|
|Qgs|Gate-source charge||-|78|-|nC|
|Qgd|Gate-drain charge||-|34|-|nC|



**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 50 V, ID= 90 A<br>RG= 4.7ΩVGS= 10 V<br>(see_Figure 13_,<br>_Figure 18_)|-|62|-|ns|
|tr|Rise time||-|108|-|ns|
|td(off)|Turn-off delay time||-|148|-|ns|
|tf|Fall time||-|40|-|ns|



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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||180|A|
|ISDM<br>(1)|Source-drain current<br>(pulsed)||-||720|A|
|VSD<br>(2)|Forward on voltage|ISD=60 A, VGS=0|-||1.5|V|
|trr|Reverse recovery time|ISD=180 A,<br>di/dt = 100 A/µs,<br>VDD=80 V, Tj=150°C<br>(see_Figure 15_)|-|85||ns|
|Qrr|Reverse recovery charge||-|200||nC|
|IRRM|Reverse recovery current||-|4.7||A|



1. Pulse width limited by safe operating area. 

2. Pulse duration = 300µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15430v1 K 280tok<br>(A) δ=0.5<br>100 0.2<br>0.1<br>0.05<br>10 100µs 10-1<br>0.02<br>Tj=175 ° C Zth=k Rthj-c<br>1 Tc=25°C 1ms 0.01 δ=tp/τ<br>Sinlge 10ms<br>pulse Single pulse tp<br>τ<br>0.1 10-2<br>0.1 1 10 VDS(V) 10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

## **Figure 5. Transfer characteristics** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM14734v1 AM14735v1<br>ID ID<br>(A) VGS=10V (A)<br>VDS = 2V<br>350<br>300<br>8V<br>7V 300<br>250<br>250<br>200<br>200<br>150<br>150<br>100 6V 100<br>50 50<br>5V<br>0 0<br>0 2 4 6 8 VDS(V) 0 1 2 3 4 5 6 7 8 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 6. Gate charge vs gate-source voltage** 

## **Figure 7. Static drain-source on-resistance** 

**==> picture [462 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM14736v1 RDS(on) AM15431v1<br>(V) (mΩ)<br>VDD=50V<br>10 2.25 VGS=10V<br>ID=180A<br>8 2.20<br>6 2.15<br>4 2.10<br>2 2.05<br>0 2<br>0 50 100 150 Qg(nC) 0 40 80 120 160 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 9. Capacitance variations** 

**Figure 8. Normalized V(BR)DSS vs temperature** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS AM14742v1 C AM14738v1<br>(norm) (pF)<br>ID = 1mA<br>14000<br>1.04<br>Ciss<br>12000<br>1.02<br>10000<br>1.00 8000<br>6000<br>0.98<br>4000<br>0.96 2000 Crss<br>Coss<br>0.94 0<br>-75 -25 0 25 75 125 TJ(°C) 0 20 40 60 80 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Source-drain diode forward characteristics** 

**Figure 11. Normalized gate threshold voltage vs temperature** 

**==> picture [462 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM14739v1 VGS(th) AM14741v1<br>(V) (norm)<br>1.05 ID = 250µA<br>TJ=-50°C 1.0<br>0.95<br>0.90<br>0.85<br>TJ=25°C<br>0.75<br>0.80<br>0.65<br>0.70<br>TJ=150°C<br>0.55<br>0.45 0.60<br>0 40 80 120 160 ISD(A) -75 -25 0 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized on-resistance vs temperature** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM14740v1<br>(norm)<br>2.0<br>ID = 60A<br>1.6<br>1.2<br>0.8<br>0.4<br>-75 -25 0 25 75 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 14. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 346] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **4.1 H[2] PAK-2, STH315N10F7-2** 

**Figure 19. H²PAK-2 drawing** 

**==> picture [405 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
8159712_C 8159712_C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
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**Package mechanical data** 

**Table 8. H²PAK-2 mechanical data** 

||**Table 8. H²PAK-2 mechanical data**|**Table 8. H²PAK-2 mechanical data**||
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.80|
|A1|0.03||0.20|
|C|1.17||1.37|
|e|4.98||5.18|
|E|0.50||0.90|
|F|0.78||0.85|
|H|10.00||10.40|
|H1|7.40||7.80|
|L|15.30||15.80|
|L1|1.27||1.40|
|L2|4.93||5.23|
|L3|6.85||7.25|
|L4|1.5||1.7|
|M|2.6||2.9|
|R|0.20||0.60|
|V|0°||8°|



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**Package mechanical data** 

## **Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)** 

**==> picture [405 x 388] intentionally omitted <==**

**----- Start of picture text -----**<br>
8159712_C<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4.2 H[2] PAK-6, STH315N10F7-6** 

## **Figure 21. H²PAK-6 drawing** 

**==> picture [405 x 446] intentionally omitted <==**

**----- Start of picture text -----**<br>
8159693_Rev_F<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. H²PAK-6 mechanical data** 

||**Table 9. H²PAK-6 mechanical data**|**Table 9. H²PAK-6 mechanical data**||
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.80|
|A1|0.03||0.20|
|C|1.17||1.37|
|e|2.34||2.74|
|e1|4.88||5.28|
|e2|7.42||7.82|
|E|0.45||0.60|
|F|0.50||0.70|
|H|10.00||10.40|
|H1|7.40||7.80|
|L|14.75||15.25|
|L1|1.27||1.40|
|L2|4.35||4.95|
|L3|6.85||7.25|
|L4|1.5||1.75|
|M|1.90||2.50|
|R|0.20||0.60|
|V|0°||8°|



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**Package mechanical data** 

**Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)** 

**==> picture [405 x 458] intentionally omitted <==**

**----- Start of picture text -----**<br>
footprint_Rev_F<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

## **Figure 23. Tape** 

**==> picture [353 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>1 So od oo lb ON<br>F<br>K0 W<br>B0<br>f P t [IIE]<br>A0 P1 D1<br>ps<br>User direction of feed<br>R<br>See Oe<br>ee<br>ts Bending radius<br>User direction of feed<br>AM08852v2<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

**Table 10. Tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**<br>**Min.**<br>**Max.**||**Dim.**|**mm**||
||**Min.**|||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|0.35<br>24.3||||
|T|0.25|||||
|W|23.7|||||



## **Figure 24. Reel** 

**==> picture [405 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|02-Aug-2013|1|Initial release.|
|03-Sep-2013|2|– Modified:_Table 1_, RDS(on)typical value in_Table 4_<br>– Minor text changes|
|27-May-2014|3|– Modified: title and_Features_in cover page<br>– Updated:_Section 4: Package mechanical data_<br>– Minor text changes|
|12-Sep-2014|4|– Modified: title, features and description in cover page.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID025090 Rev 4 

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## Links

- [View this product on Novapart](https://novapart.co/products/STH315N10F7-6/power-mosfet-n-channel-100-v-180-a-2100-ohm-h2pak)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/sth315n10f7-6/mosfet-n-ch-100v-180a-h2pak-7/dp/2451118)
---

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