# IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-3P, 3 Pins

![Product image](https://novapart.co/image/farnell:2629743/)

**URL**: https://novapart.co/products/STGWT80V60DF/igbt-120-a-185-v-469-w-600-to-3p-3-pins
**SKU**: STGWT80V60DF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.1400
**Stock**: 10+
**Lead Time**: 239 days (indicative)

## Description

DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3P; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | V |
| Power Dissipation | 469W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3P |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629743/)

## **STGW80V60DF STGWT80V60DF** 

Trench gate field-stop IGBT, V series 600 V, 80 A very high speed 

**Datasheet** - **production data** 

## **Features** 

**==> picture [213 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2 3<br>1 2<br>ee 1<br>TO-247 TO-3P<br>Figure 1. Internal schematic diagram<br>**----- End of picture text -----**<br>


**==> picture [141 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (2 or TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


- Maximum junction temperature: TJ = 175 °C 

- Tail-less switching off 

- VCE(sat) = 1.85 V (typ.) @ IC = 80 A 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

- Very fast soft recovery antiparallel diode 

## **Applications** 

- Photovoltaic inverters 

- Uninterruptible power supply 

- Welding 

- Power factor correction 

- Very high frequency converters 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

**Order code Marking Package Packaging** STGW80V60DF GW80V60DF TO-247 Tube STGWT80V60DF GWT80V60DF TO-3P Tube ~~TT~~ 

_www.st.com_ 

January 2014 

DocID024362 Rev 2 

1/18 

This is information on a product in full production. 

|**Contents**|**STGW80V60DF, STGWT80V60DF**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



2/18 

DocID024362 Rev 2 

**STGW80V60DF, STGWT80V60DF** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|600<br>~~ee~~|V<br>~~ee~~|
|IC|Continuous collector current at TC= 25 °C|120(1)|A<br>~~—~~|
|IC<br>~~a~~<br>~~ee~~|Continuous collector current at TC= 100 °C<br>~~ee~~|80|A<br>~~ee~~<br>~~—~~|
|ICP<br>(2)<br>~~ee~~|Pulsed collector current<br>~~ee~~|240<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~—~~|
|VGE<br>~~ee~~|Gate-emitter voltage<br>~~ee~~|±20|V<br>~~ee~~<br>~~—~~|
|IF<br>~~a~~<br>~~a~~|Continuous forward current at TC= 25 °C|120(1)|A<br>~~ee~~|
|IF<br>~~a~~|Continuous forward current at TC= 100 °C|80<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|IFP<br>(2)<br>~~a~~|Pulsed forward current|360|A<br>~~ee~~<br>~~—~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|469|W|
|TSTG<br>~~a~~<br>~~a~~|Storage temperature range|- 55 to 150|°C<br>~~ee~~|
|TJ<br>~~a~~|Operating junction temperature|- 55 to 175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



1. Current level is limited by bond wires 

2. Pulse width limited by maximum junction temperature 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistance junction-case IGBT|0.32|°C/W|
|RthJC|Thermal resistance junction-case diode|0.66|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



DocID024362 Rev 2 

3/18 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

||**Table 4. Static characteristics**|**Table 4. Static characteristics**<br>~~a~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|V(BR)CES<br>~~ee~~<br>~~|)~~|Collector-emitter<br>breakdown voltage<br>(VGE= 0)<br>~~ee~~<br>~~|)~~|IC= 2 mA<br>~~ee~~<br>~~a~~<br>|600<br>~~ee~~<br>~~e~~~~**e**~~<br>|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>~~ee~~|
|VCE(sat)<br>~~|)~~<br>~~Pp~~|Collector-emitter saturation<br>voltage<br>~~|) ~~<br>~~Pp~~|VGE= 15 V, IC= 80 A<br>~~a~~<br>~~ee~~<br>~~Fr~~|~~ee~~<br>~~e~~~~**e**~~<br>~~Fr~~|1.85<br>~~ee~~<br>~~ee~~|2.3<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|||VGE= 15 V, IC= 80 A<br>TJ= 125 °C<br>~~Fr~~|~~e~~~~**e**~~<br>~~Fr~~|2.15<br>~~ee~~|~~ee~~||
|||VGE= 15 V, IC= 80 A<br>TJ= 175 °C<br> ~~Fr~~<br>~~UE~~|~~e~~~~**e**~~<br>~~Fr~~<br>~~UE~~<br>~~ee~~|2.4<br>~~ee~~<br>~~UE~~<br>~~ee~~|~~ee~~<br>~~UE~~<br>~~ee~~||
|VF<br>~~|)~~<br>~~Pp~~<br>~~ee~~|Forward on-voltage<br>~~|) ~~<br>~~Pp~~<br>~~es~~|IF= 80 A<br> <br>~~ee~~<br>~~err~~|~~e~~~~**e** ~~<br><br>~~ee~~<br>~~ee~~<br>~~err~~|1.9<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|2.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|V<br>~~ee~~<br>~~ee~~<br>~~err~~|
|||IF= 80 A TJ= 125 °C<br>~~err~~|~~ee~~<br>~~err~~<br>~~**ee**~~|1.6<br>~~ee~~<br>~~err~~<br>~~ee~~|~~ee~~<br>~~err~~<br>~~e~~~~**e**~~|V<br>~~ee~~<br>~~err~~<br>~~ee~~|
|||IF= 80 A TJ= 175 °C<br>~~err~~<br>~~es~~<br>~~ees~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~**ee**~~<br>~~ees~~|1.5<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~|
|VGE(th)<br>~~Pp~~<br>~~ee~~|Gate threshold voltage<br>~~Pp~~<br>~~es~~|VCE= VGE, IC= 1 mA<br>~~ees~~|5<br>~~ee ~~<br>~~**ee**~~<br>~~ees~~|6<br> ~~ee ~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|7<br> ~~ee~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~ee~~<br>~~ees~~|
|ICES<br>~~ee~~<br>~~a~~|Collector cut-off current<br>(VGE= 0)<br>~~es~~<br>~~a~~|VCE= 600 V<br>~~ees~~<br>~~a~~|~~**ee** ~~<br>~~ees~~<br>~~a~~|~~ee ~~<br>~~ees~~<br>~~Ge ~~<br>~~a~~|100<br> ~~e~~~~**e** ~~<br>~~ees~~<br> ~~e~~<br>~~a~~|μA<br> ~~ee~~<br>~~ees~~<br>~~a~~|
|IGES<br>~~ee~~|Gate-emitter leakage<br>current (VCE= 0)<br>~~ee~~|VGE= ± 20 V<br>~~ee~~|~~ee~~|~~ee~~|250<br>~~ee~~|nA<br>~~ee~~|



4/18 

DocID024362 Rev 2 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

**Table 5. Dynamic characteristics** 

**==> picture [392 x 127] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Test conditions|Min.|Typ.|Max.|Unit|
|Cies|Input capacitance|-|10800|-|nF|
|Coes|Output capacitance|VCE = 25 V, f = 1 MHz,|-|390|-|pF|
|Reverse transfer|VGE = 0|
|Cres|capacitance|-|220|-|pF|
|Qg|Total gate charge|-|448|-|nC|
|Qge|Gate-emitter charge|VVCC GE = 480 V, I= 15 V, see C = 80 A,|Figure 29|-|76|-|nC|
|Qgc|Gate-collector charge|-|184|-|nC|

**----- End of picture text -----**<br>


**Table 6. IGBT switching characteristics (inductive load)** 

**==> picture [405 x 307] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Test conditions|Min.|Typ.|Max.|Unit|
|a|ee|
|td(on)|Turn-on delay time|-|60|-|ns|
|ee|tr|Current rise time|||-|30|-|ns|
|a||||||
|(di/dt)on|Turn-on current slope|-|2200|-|A/μs|
|es|td(off)|Turn-off delay time|VCE = 400 V, IC = 80 A,|-|220|||-|||ns|
|esa|tf|Current fall time|ee|see RG = 5|Figure 28|Ω, VGE = 15 V,||_||-|||17||||-||||ns|
|Eon(1)|Turn-on switching losses|-|1.8|-|mJ|
|a||||||
|Eoff(2)|Turn-off switching losses|-|1|-|mJ|
|a||||||
|Ets|Total switching losses|-|2.8|-|mJ|
|a||||||
|td(on)|Turn-on delay time|-|60|-|ns|
|es|tr|Current rise time|-|30|||-|||ns|
|es|(di/dt)on|Turn-on current slope|ee|_|-|||2100|||-|||A/μs|
|a|ee||_|||||||
|a|td(off)|Turn-off delay time|VCE = 400 V, IC = 80 A,|||-|240|||-|||ns|
|RG = 5 Ω, VGE = 15 V|,|
|a|tf|Current fall time|TJ = 175 °C, see|Figure 28|||-|22|||-|||ns|
|Eon(1)|Turn-on switching losses|-|3.8|-|mJ|
|a||||||
|Eoff(2)|Turn-off switching losses|-|1.25|-|mJ|
|es|Ets|Total switching losses|-|5.05|||-|||mJ|
|es|ee|_|||||||
|1.|Energy losses include reverse recovery of the diode.|

**----- End of picture text -----**<br>


2. Turn-off losses include also the tail of the collector current. 

DocID024362 Rev 2 

5/18 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

**Table 7. Diode switching characteristics (inductive load)** 

|**Symbol**<br>~~a ee~~<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~eee~~|**Max.**<br>~~ee~~<br>~~eee~~|**Unit**<br>~~ee~~<br>~~eee~~|
|---|---|---|---|---|---|---|
|trr<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|IF= 80 A, VR= 400 V,<br>di/dt = 1000 A/μs,<br>VGE= 15 V_,_see_Figure 28_<br>~~ee~~<br>~~PF~~<br>~~ee~~<br>~~PF~~<br>~~P~~|-<br>~~PF~~<br>~~|~~<br>~~PF~~<br>~~|~~|60<br>~~eee~~<br>~~fl~~<br>~~|~~|-<br>~~eee~~<br>~~fl|~~|ns<br>~~eee~~<br>~~|~~|
|Qrr<br>~~ee~~<br>~~ee~~<br>~~oo~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~oo~~||-<br>~~PF~~<br>~~|~~<br>~~PF~~<br>~~|~~<br>~~oon~~|112<br>~~eee~~<br>~~fl~~<br>~~|~~<br>~~oon~~|-<br>~~eee~~<br>~~fl|~~<br>~~oon~~|nC<br>~~eee~~<br>~~|~~<br>~~oon~~|
|Irrm<br>~~ee~~<br>~~oo~~|Reverse recovery current<br>~~ee~~<br>~~oo~~||-<br>~~PF~~<br>~~|~~<br>~~oon~~|3.6<br><br>~~|~~<br>~~oon~~|-<br>~~|~~<br>~~oon~~|A<br>~~|~~<br>~~oon~~|
|dIrr//dt<br>~~oo~~<br>~~ee~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~oo~~<br>~~ee~~||-<br>~~oon~~<br>~~Pof~~|140<br>~~oon~~<br>~~of~~|-<br>~~oon~~|A/μs<br>~~oon~~|
|Err<br>~~oo~~<br>~~ee~~<br>~~ee~~|Reverse recovery energy<br>~~oo~~<br>~~ee~~<br>~~eee~~||-<br>~~oon~~<br>~~Pof~~<br>~~P|~~|70<br>~~oon~~<br>~~of~~<br>~~P|fy~~|-<br>~~oon~~<br>~~fy~~|μJ<br>~~oon~~<br>~~fy~~|
|trr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~eee~~<br>~~ee~~|IF= 80 A, VR= 400 V,<br>di/dt = 1000 A/μs,VGE= 15<br>V; TJ= 175 °C<br>see_Figure 28_<br>~~P~~<br>~~ee~~<br>~~Fo~~<br>~~PF~~|-<br>~~P of~~<br>~~P|~~<br>~~Fo|~~|340<br>~~of~~<br>~~P|fy~~<br>~~|~~|-<br>~~fy~~<br>|ns<br>~~fy~~<br>|
|Qrr<br>~~ee ~~<br>~~ee~~|Reverse recovery charge<br> ~~eee~~<br>~~ee~~||-<br>~~P|~~<br>~~Fo|~~|2200<br>~~P| fy~~<br>~~|fll~~|-<br>~~fy~~<br>~~fll~~|nC<br>~~fy~~<br>~~fll~~|
|Irrm<br>~~ee~~|Reverse recovery current<br>~~ee~~||-<br>~~Fo |~~|13<br>~~|~~|-<br>|A<br>|
|dIrr//dt<br>~~ee~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~ee~~||-<br>~~PFof~~|70<br>~~of~~|-<br>|A/μs<br>|
|Err<br>~~ee~~|Reverse recovery energy<br>~~ee~~||-<br>~~PFof~~|880<br>~~ofET~~|-<br>~~ET~~|μJ<br>~~ET~~|



6/18 

DocID024362 Rev 2 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

**==> picture [422 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ptot GIPD041120131017FSR IC GIPD011020131024FSR<br>(W) (A)<br>400 120<br>300 90<br>200 60<br>100 30<br>VGE ≥ 15V, TJ ≤ 175 °C<br>0 0<br>0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C)<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics (TJ = 25°C)** 

## **Figure 5. Output characteristics (TJ = 175°C)** 

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**----- Start of picture text -----**<br>
IC GIPD041120131118FSR IC GIPD281020131423FSR<br>(A) 11V (A)<br>VGE=15V 9V VGE=15V 13V 11V<br>120 120<br>9V<br>80 80<br>40 40<br>7V<br>0 0<br>0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 6. VCE(sat) vs. junction temperature** 

**Figure 7. VCE(sat) vs. collector current** 

**==> picture [433 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCE(sat) GIPD041120131129FSR VCE(sat) GIPD041120131136FSR<br>(V) IC= 160A (V)<br>VGE= 15V VGE= 15V TJ= 175°C<br>3.5 3.5<br>3 3<br>IC= 80A<br>2.5 2.5 TJ= 25°C<br>2 2<br>1.5 I C = 40A 1.5 TJ= -40°C<br>1 1<br>-50 0 50 100 150 TJ(°C) 20 40 60 80 100 120 140 IC(A)<br>**----- End of picture text -----**<br>


DocID024362 Rev 2 

7/18 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 9. Forward bias safe operating area** 

**==> picture [423 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ic [A] GIPD041120131144FSR IC GIPD041120131152FSR<br>(A)<br>160 Tc=80°C<br>100<br>120 Tc=100  [°] C<br>10 μs<br>80<br>10 Single pulse 100 μs<br>40 rectangular current shape, Tc= 25°C, T J <= 175°C<br>(duty cycle=0.5, VCC = 400V, RG=4.7Ω, VGE= 15V<br>V GE = 0/15 V, T J =175°C) 1 ms<br>01 10 f [kHz]  11 10 100 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 10. Transfer characteristics** 

**Figure 11. Diode VF vs. forward current** 

**==> picture [421 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC GIPD041120131324FSR VF (V) GIPD041120131336FSR<br>(A)<br>TJ=25°C TJ= -40°C<br>VCE=5V<br>2.4<br>120<br>TJ=-40°C TJ=175°C<br>2 TJ= 25 ° C<br>80<br>1.6<br>TJ= 175°C<br>40<br>1.2<br>0<br>6 7 8 9 VGE(V) 0.820 40 60 80 100 120 140 IF(A)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized VGE(th) vs junction temperature** 

**Figure 13. Normalized V(BR)CES vs. junction temperature** 

**==> picture [430 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE(th) GIPD041120131351FSR V(BR)CES GIPD041120131353FSR<br>(norm) (norm)<br>1.1 I C = 1mA<br>VCE= VGE 1.1<br>IC= 2mA<br>1.0<br>0.9<br>1.0<br>0.8<br>0.7<br>0.6-50 0 50 100 150 TJ(°C) 0.9-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


8/18 

DocID024362 Rev 2 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

**==> picture [453 x 595] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage<br>C GIPD041120131358FSR VGE GIPD041120131406FSR<br>(pF) (V)<br>16 IC= 80A<br>VCC= 480V<br>10000 Cies<br>12<br>8<br>1000<br>4<br>Coes<br>100 Cres 0<br>0.1 SH 1 Sti et 10 VCE(V) Bo 0 100 200 300 400 500 Qg(nC)<br>Figure 16. Switching loss vs collector current Figure 17. Switching loss vs gate resistance<br>E GIPD041120131413FSR E GIPD041120131419FSR<br>(μJ) (μJ)<br>VCC = 400V, VGE = 15V,<br>10000 RG = 10Ω, TJ = 175°C VCC = 400 V, VGE = 15 V,<br>8000 IC = 80 A, TJ = 175 °C<br>8000<br>EON 6000 EON<br>6000<br>EOFF<br>4000<br>4000<br>2000 E OFF<br>2000<br>0 0<br>20 40 60 80 100 120 140 IC(A) 0 10 20 30 40 RG(Ω)<br>Figure 18. Switching loss vs temperature Figure 19. Switching loss vs collector-emitter<br>voltage<br>E GIPD041120131424FSR E GIPD041120131428FSR<br>(μJ) VCC= 400V, VGE= 15V,  (μJ) TJ= 175°C, VGE= 15V,<br>RG= 10Ω, IC= 80A RG= 10Ω, IC= 80A<br>4000 6000<br>EON<br>EON<br>3000 4000<br>E OFF<br>EOFF<br>2000 2000<br>1000 0<br>0 50 100 150 TJ(°C) 150 250 350 450 VCE(V)<br>**----- End of picture text -----**<br>


DocID024362 Rev 2 

9/18 

**STGW80V60DF, STGWT80V60DF** 

**Electrical characteristics** 

## **Figure 20. Switching times vs. collector current** 

## **Figure 21. Switching times vs. gate resistance** 

**==> picture [416 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD041120131437FSR GIPD041120131444FSR<br>t t<br>(ns) TJ= 175 ° C, VGE= 15V,  (ns) TJ= 175°C, VGE= 15V,<br>RG= 10Ω, VCC= 400V tdoff I C = 80A, V CC = 400V tdoff<br>1000<br>tdon<br>100<br>tdon =<br>—— SS Se aera Te seer<br>- ser ~--<br>tr ae = 100 om - oo oerr = =o"<br>- ------7 “77 --- -- = pet - “7 - tr - --" 27 Pro - ? o2 ca Podort -<br>tf<br>tf<br>10 10<br>20 40 60 80 100 120 140 IC(A) 0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 22. Reverse recovery current vs. diode current slope** 

**Figure 23.  Reverse recovery time vs. diode current slope** 

**==> picture [417 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Irm GIPD041120131449FSR trr GIPD041120131511FSR<br>(A) (ns)<br>IF = 80A, Vr = 400V IF = 80A, Vr = 400V<br>120<br>300<br>100<br>TJ =175°C<br>80<br>200<br>60 TJ =175°C<br>40<br>100<br>TJ =25°C<br>20<br>TJ =25°C<br>0 0<br>0 500 1000 1500 2000 2500 di/dt(A/μs) 0 500 1000 1500 2000 2500 di/dt(A/μs)<br>**----- End of picture text -----**<br>


**Figure 24.  Reverse recovery charge vs. diode current slope** 

**==> picture [192 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD041120131516FSR<br>Qrr<br>(nC)<br>IF = 80A, Vr = 400V TJ =175°C<br>6000<br>4000<br>TJ =25°C<br>- a7<br>2000 o - --<br>eo<br>or 7<br>o° o° hen me<br>7<br>0 td<br>0 500 1000 1500 2000 2500 di/dt(A/μs)<br>**----- End of picture text -----**<br>


**Figure 25.  Reverse recovery energy vs. diode current slope** 

**==> picture [192 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Err GIPD041120131521FSR<br>(μJ) IF = 80A, Vr = 400V<br>1200<br>TJ =175°C<br>900<br>600<br>TJ=25 ° C<br>300<br>0<br>0 500 1000 1500 2000 2500 di/dt(A/μs)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 26. Thermal impedance for IGBT** 

**==> picture [272 x 236] intentionally omitted <==**

**----- Start of picture text -----**<br>
K a ZthTO2T_A<br>d=0.5<br>eaaTt TTeeeiiiieseeeniee| eeCTso" mematiTTT<br>o_O<br>0.2<br>CeeCT<br>lll<br>0.1<br>-1 net ILE<br>10<br>GA 0.05 Il<br>SS ek Ring 7<br>EY 0.02 5 = t,/ f<br>Fe Th P ll<br>0.01<br>at TH TPL. ll<br>Alt INE |<br>Single pulse T<br>10-2<br>10 Sum -5 10-4 ull 10-3 || 10 el -2 10-1 tp | [ (s)]<br>**----- End of picture text -----**<br>


**Figure 27. Thermal impedance for diode** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit switching** 

**==> picture [263 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01504v1 AM01505v1<br>**----- End of picture text -----**<br>


**Figure 30. Switching waveform** 

**Figure 31. Diode recovery time waveform** 

**==> picture [453 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% di/dt Qrr<br>VG fe 10% IF trr<br>90%<br>—_—e i ta TH tb<br>VCE Tr(Voff) 10%<br>| | Tcross L7 t<br>90%<br>IRRM IRRM<br>IC Td(on)Ton I- Tr(Ion === ) — — —,>= Td(offToff) Tf _—Ne 10% GyGY. C UA 2 5%<br>VF<br>dv/dt<br>AM01506v1 AM01507v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **Figure 32. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


**Table 8. TO-247 mechanical data** 

|**Dim.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|



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**Package mechanical data** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|b1<br>~~a~~|2.0|~~ee~~|2.40<br>~~ee~~|
|b2<br>~~a~~<br>~~a~~<br>~~es~~|3.0|~~ee ~~|3.40<br> ~~ee~~|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~<br>~~a~~|19.85||20.15|
|E<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~<br>~~es~~|3.70||4.30|
|L2<br>~~es~~||18.50||
|∅P<br>~~es~~<br>~~a~~|3.55||3.65|
|∅R<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Package mechanical data** 

## **Figure 33. TO-3P drawing** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_A<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**==> picture [150 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Table 9. TO-3P mechanical data<br>**----- End of picture text -----**<br>


||**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.60|~~ee ~~|5<br> ~~ee~~|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1|1.20|
|b1<br>~~a~~|1.80||2.20|
|b2<br>~~a~~<br>~~es~~|2.80||3.20|
|c<br>~~es~~|0.55|0.60|0.75|
|D<br>~~es~~<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~||13.90||
|E<br>~~a~~|15.40||15.80|
|E1<br>~~a~~||13.60||
|E2<br>~~a~~<br>~~es~~||9.60||
|e<br>~~es~~|5.15|5.45|5.75|
|L<br>~~es~~<br>~~a~~|19.50|20|20.50|
|L1<br>~~a~~||3.50||
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~|3.10||3.30|
|Q<br>~~a~~<br>~~es~~||5||
|Q1<br>~~es~~||3.80||



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Mar-2013|1|Initial release.|
|10-Jan-2014|2|Updated title, features and description in cover page.<br>Document status promoted from preliminary to production data.<br>Updated_Table 4: Static characteristics_,_Table 5: Dynamic_<br>_characteristics_,_Table 6: IGBT switching characteristics (inductive_<br>_load)_and_Table 7: Diode switching characteristics (inductive load)_.<br>Inserted_Section 2.1: Electrical characteristics (curves)_.|



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## **Please Read Carefully:** 

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DocID024362 Rev 2 



## Links

- [View this product on Novapart](https://novapart.co/products/STGWT80V60DF/igbt-120-a-185-v-469-w-600-to-3p-3-pins)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwt80v60df/igbt-single-600v-120a-to-3p-3/dp/2629743)
---

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