# IGBT, 80 A, 1.6 V, 283 W, 650 V, TO-3P, 3 Pins
**URL**: https://novapart.co/products/STGWT40HP65FB/igbt-80-a-16-v-283-w-650-to-3p-3-pins
**SKU**: STGWT40HP65FB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3200
**Stock**: 500+
**Lead Time**: 120 days (indicative)
## Description
DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 283W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3P |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3132711/)
## **STGWT40HP65FB**
## Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
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TAB
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## **Features**
- Maximum junction temperature: TJ = 175 °C
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
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3
2
1
TO-3P
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**Figure 1: Internal schematic diagram**
- Co-packed diode for protection
- Safe paralleling
- Low thermal resistance
## **Applications**
- Power factor corrector (PFC)
## **Description**
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGWT40HP65FB|GWT40HP65FB|TO-3P|Tube|
_www.st.com_
July 2016 DocID028465 Rev 3
1/17
This is information on a product in full production.
|**Contents**
**STGWT40HP65FB**|**Contents**
**STGWT40HP65FB**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 12**|
|**4**|**Package information ..................................................................... 13**|
||4.1
TO-3P package information ............................................................ 14|
|**5**|**Revision history ............................................................................ 16**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|80|A|
||Continuous collector current at TC= 100 °C|40||
|ICP_(1)_|Pulsed collector current|160|A|
|VGE|Gate-emitter voltage|± 30|V|
|IF_(2)_|Continuous forward current at TC= 25 °C|5|A|
||Continuous forward current at TC= 100 °C|5||
|IFP_(3)_|Pulsed forward current|10|A|
|PTOT|Total dissipation at TC= 25 °C|283|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||
## **Notes:**
- (1)Pulse width limited by maximum junction temperature.
- (2)Limited by wires.
- (3)Pulsed forward current.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.53|°C/W|
|RthJC|Thermal resistancejunction-case diode|5||
|RthJA|Thermal resistancejunction-ambient|50||
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**STGWT40HP65FB**
**Electrical characteristics**
## **2 Electrical characteristics**
TJ = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 2 mA|650|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 40 A||1.6|2.0|V|
|||VGE= 15 V, IC= 40 A,
TJ= 125 °C||1.7|||
|||VGE= 15 V, IC= 40 A,
TJ= 175 °C||1.8|||
|VF|Forward on-voltage|IF= 5 A||2||V|
|||IF= 5 A, TJ= 125 °C||1.85|||
|||IF= 5 A, TJ= 175 °C||1.75|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|5412|-|pF|
|Coes|Output capacitance||-|198|-||
|Cres|Reverse transfer capacitance||-|107|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 40 A,
VGE= 15 V (see_Figure 29:_
_"Gate charge test circuit"_)|-|210|-|nC|
|Qge|Gate-emitter charge||-|39|-||
|Qgc|Gate-collector charge||-|82|-||
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)|Turn-off-delaytime|VCE= 400 V, IC= 40 A,
VGE= 15 V, RG= 5 Ω (see
_Figure 28: "Test circuit for_
_inductive load switching"_)|-|142|-|ns|
|tf|Current fall time||-|27|-|ns|
|Eoff_(1)_|Turn-off switching energy||-|363|-|µJ|
|td(off)|Turn-off-delaytime|VCE= 400 V, IC= 40 A,
VGE= 15 V, RG= 5 Ω
TJ= 175 °C (see_Figure 28:_
_"Test circuit for inductive_
_load switching"_)|-|141|-|ns|
|tf|Current fall time||-|61|-|ns|
|Eoff|Turn-off switching energy||-|764|-|µJ|
**Notes:**
(1)Including the tail of the collector current.
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**Electrical characteristics**
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 5 A, VR= 400 V,
VGE= 15 V (see_Figure_
_28: "Test circuit for_
_inductive load switching"_)
di/dt = 1000 A/µs|-|140||ns|
|Qrr|Reverse recoverycharge||-|21||nC|
|Irrm|Reverse recoverycurrent||-|6.6||A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|430||A/µs|
|Err|Reverse recoveryenergy||-|1.6||µJ|
|trr|Reverse recoverytime|IF= 5 A, VR= 400 V,
VGE= 15 V TJ= 175 °C
(see_Figure 28: "Test_
_circuit for inductive load_
_switching"_)
di/dt = 1000 A/µs|-|200||ns|
|Qrr|Reverse recoverycharge||-|47.3||nC|
|Irrm|Reverse recoverycurrent||-|9.6||A|
|dIrr/dt|Peak rate of fall of reverse
recovery current during tb||-|428||A/µs|
|Err|Reverse recoveryenergy||-|3.2||µJ|
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
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Figure 2: Power dissipation vs. case Figure 3: Collector current vs. case
temperature temperature
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**Figure 4: Output characteristics (TJ = 25°C)**
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**Figure 5: Output characteristics (TJ = 175°C)**
**==> picture [156 x 142] intentionally omitted <==**
**Figure 6: VCE(sat) vs. junction temperature**
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**Figure 7: VCE(sat) vs. collector current**
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**Electrical characteristics**
**Figure 8: Collector current vs. switching Figure 9: Forward bias safe operating area frequency**
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**Figure 10: Transfer characteristics**
**==> picture [156 x 142] intentionally omitted <==**
**Figure 11: Diode VF vs. forward current**
**==> picture [152 x 142] intentionally omitted <==**
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Figure 12: Normalized VGE(th) vs junction Figure 13: Normalized V(BR)CES vs. junction
temperature temperature
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**Electrical characteristics**
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Figure 15: Gate charge vs. gate-emitter
Figure 14: Capacitance variations
voltage
Figure 16: Switching energy vs collector Figure 17: Switching energy vs gate
current resistance
Figure 19: Switching energy vs. collector
Figure 18: Switching energy vs temperature
emitter voltage
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**Electrical characteristics**
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**----- Start of picture text -----**
Figure 20: Switching times vs. collector Figure 21: Switching times vs. gate
current resistance
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**==> picture [410 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 22: Reverse recovery current vs. diode Figure 23: Reverse recovery time vs. diode
current slope current slope
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**==> picture [409 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 24: Reverse recovery charge vs. diode Figure 25: Reverse recovery energy vs. diode
current slope current slope
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**Electrical characteristics**
**Figure 26: Thermal impedance**
**==> picture [308 x 295] intentionally omitted <==**
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**Electrical characteristics**
**Figure 27: Thermal impedance for diode**
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**Test circuits**
## **3 Test circuits**
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**----- Start of picture text -----**
Figure 28: Test circuit for inductive load
switching
Figure 29: Gate charge test circuit
VCC
A A
C
12 V 47 kΩ
G L=100 µH 1 kΩ
100 nF
E B
B
C 3.3µF 1000µF VCC
G D.U.T Vi ≤ VGMAX IG=CONST 100 Ω D.U.T.
+ RG E 2200
µF 2.7 kΩ VG
-
47 kΩ
PW 1 kΩ
AM01504v1
AM01505v1
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**Figure 30: Switching waveform**
**==> picture [112 x 63] intentionally omitted <==**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
DocID028465 Rev 3
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**STGWT40HP65FB**
**Package information**
## **4.1 TO-3P package information**
**Figure 31: TO-3P package outline**
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8045950_B
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**Package information**
**Table 8: TO-3P package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.60|4.80|5.00|
|A1|1.45|1.50|1.65|
|A2|1.20|1.40|1.60|
|b|0.80|1.00|1.20|
|b1|1.80|2.00|2.20|
|b2|2.80|3.00|3.20|
|c|0.55|0.60|0.75|
|D|19.70|19.90|20.10|
|D1|13.70|13.90|14.10|
|E|15.40|15.60|15.80|
|E1|13.40|13.60|13.80|
|E2|9.40|9.60|9.90|
|e|5.15|5.45|5.75|
|L|19.80|20.00|20.20|
|L1|3.30|3.50|3.70|
|L2|18.20|18.40|18.60|
|ØP|3.30|3.40|3.50|
|ØP1|3.10|3.20|3.30|
|Q|4.80|5.00|5.20|
|Q1|3.60|3.80|4|
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**STGWT40HP65FB**
**Revision history**
## **5 Revision history**
**Table 9: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Oct-2015|1|First release.|
|01-Mar-2016|2|Updated features in cover page.
Inserted_Section 2.1: "Electrical characteristics (curves)"_.
Minor text changes|
|13-Jul-2016|3|Document statuspromoted frompreliminarytoproduction data.|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2016 STMicroelectronics – All rights reserved
DocID028465 Rev 3
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## Links
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwt40hp65fb/igbt-650v-80a-175deg-c-283w/dp/3132711)
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