# IGBT, 40 A, 1.55 V, 168 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2729673/)

**URL**: https://novapart.co/products/STGWT20HP65FB/igbt-40-a-155-v-168-w-650-to-247-3-pins
**SKU**: STGWT20HP65FB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2300
**Stock**: 10+
**Lead Time**: 274 days (indicative)

## Description

DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 168W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2729673/)

## **STGWT20HP65FB** 

## Trench gate field-stop IGBT, HB series 650 V, 20 A high speed 

Datasheet - production data 

**==> picture [115 x 103] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>1<br>TO-3P<br>**----- End of picture text -----**<br>


**Figure 1: Internal schematic diagram** 

## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- Minimized tail current 

- VCE(sat) = 1.55 V (typ.) @ IC = 20 A 

- Tight parameter distribution 

- Co-packed diode for protection 

- Safe paralleling 

- Low thermal resistance 

## **Applications** 

- Power factor corrector (PFC) 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGWT20HP65FB|GWT20HP65FB|TO-3P|Tube|



December 2016 

DocID029672 Rev 3 

1/15 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STGWT20HP65FB**|**Contents**<br>**STGWT20HP65FB**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 10**|
|**4**|**Package information ..................................................................... 11**|
||4.1<br>TO-3P package information ............................................................ 12|
|**5**|**Revision history ............................................................................ 14**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|40|A|
||Continuous collector current at TC= 100 °C|20||
|ICP_(1)_|Pulsed collector current|80|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C_(2)_|5|A|
||Continuous forward current at TC= 100 °C|5||
|IFP_(3)_|Pulsed forward current|10|A|
|PTOT|Total dissipation at TC= 25 °C|168|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175||



## **Notes:** 

- (1)Pulse width limited by maximum junction temperature 

- (2)Limited by wires 

- (3)Pulsed forward current 

||**Table 3: Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistancejunction-case IGBT|0.9|°C/W|
|RthJC|Thermal resistancejunction-case diode|5||
|RthJA|Thermal resistancejunction-ambient|50||



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**STGWT20HP65FB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

TJ = 25 °C unless otherwise specified 

## **Table 4: Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 2 mA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 20 A||1.55|2.0|V|
|||VGE= 15 V, IC= 20 A,<br>TJ= 125 °C||1.65|||
|||VGE= 15 V, IC= 20 A,<br>TJ= 175 °C||1.75|||
|VF|Forward on-voltage|IF= 5 A||2||V|
|||IF= 5 A, TJ= 125 °C||1.85|||
|||IF= 5 A, TJ= 175 °C||1.75|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 5: Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V|-|2764|-|pF|
|Coes|Output capacitance||-|80|-||
|Cres|Reverse transfer capacitance||-|60|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 20 A,<br>VGE= 15 V<br>(see_Figure 27: "Gate_<br>_charge test circuit"_)|-|120|-|nC|
|Qge|Gate-emitter charge||-|20|-||
|Qgc|Gate-collector charge||-|50|-||



**Table 6: IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)|Turn-off delaytime|VCE= 400 V, IC= 20 A,<br>VGE= 15 V, RG= 10 Ω<br>(see_Figure 26: "Test circuit_<br>_for inductive load_<br>_switching"_)|-|139|-|ns|
|tf|Current fall time||-|20|-|ns|
|Eoff_(1)_|Turn-off switching energy||-|170|-|µJ|
|td(off)|Turn-off-delaytime|VCE= 400 V, IC= 20 A,<br>VGE= 15 V, RG= 10 Ω,<br>TJ= 175 °C<br>(see_Figure 26: "Test circuit_<br>_for inductive load_<br>_switching"_)|-|147|-|ns|
|tf|Current fall time||-|38|-|ns|
|Eoff_(1)_|Turn-off switching energy||-|353|-|µJ|



## **Notes:** 

(1)Including the tail of the collector current 

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**Electrical characteristics** 

**Table 7: Diode switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 5 A, VR= 400 V,<br>VGE= 15 V, di/dt = 1000 A/µs<br>(see_Figure 26: "Test circuit_<br>_for inductive load switching"_)|-|140|-|ns|
|Qrr|Reverse recoverycharge||-|21|-|nC|
|Irrm|Reverse recoverycurrent||-|6.6|-|A|
|dIrr/dt|Peak rate of fall of reverse<br>recoverycurrent duringtb||-|430|-|A/µs|
|Err|Reverse recoveryenergy||-|1.6|-|µJ|
|trr|Reverse recoverytime|IF= 5 A, VR= 400 V,<br>VGE= 15 V, TJ= 175 °C,<br>di/dt = 1000 A/µs<br>(see_Figure 26: "Test circuit_<br>_for inductive load switching"_)|-|200|-|ns|
|Qrr|Reverse recoverycharge||-|47.3|-|nC|
|Irrm|Reverse recoverycurrent||-|9.6|-|A|
|dIrr/dt|Peak rate of fall of reverse<br>recovery current during tb||-|428|-|A/µs|
|Err|Reverse recoveryenergy||-|3.2|-|µJ|



DocID029672 Rev 3 

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**STGWT20HP65FB** 

**Electrical characteristics** 

**2.1 Electrical characteristics (curves)** 

**Figure 2: Output characteristics (TJ = 25 °C)** 

**==> picture [161 x 153] intentionally omitted <==**

**Figure 4: Transfer characteristics** 

**==> picture [162 x 152] intentionally omitted <==**

**Figure 6: VCE(sat) vs. junction temperature** 

**==> picture [187 x 164] intentionally omitted <==**

**Figure 3: Output characteristics (TJ = 175 °C)** 

**==> picture [155 x 154] intentionally omitted <==**

**Figure 5: Collector current vs. case temperature** 

**==> picture [162 x 152] intentionally omitted <==**

**Figure 7: Power dissipation vs. case temperature** 

**==> picture [175 x 161] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 8: Forward bias safe operating area** 

**==> picture [174 x 162] intentionally omitted <==**

**Figure 10: Normalized VGE(th) vs. junction temperature** 

**==> picture [173 x 156] intentionally omitted <==**

**Figure 12: Switching energy vs. collector current** 

**==> picture [171 x 158] intentionally omitted <==**

**Figure 9: Collector current vs. switching frequency** 

**==> picture [171 x 159] intentionally omitted <==**

**Figure 11: Normalized V(BR)CES vs. junction temperature** 

**==> picture [181 x 158] intentionally omitted <==**

**Figure 13: Switching energy vs. gate resistance** 

**==> picture [171 x 163] intentionally omitted <==**

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## **Electrical characteristics** 

**==> picture [448 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Switching energy vs. temperature  Figure 15: Switching energy vs. collector emitter<br>voltage<br>**----- End of picture text -----**<br>


**Figure 16: Switching times vs. collector current** 

**==> picture [177 x 168] intentionally omitted <==**

**Figure 17: Switching time vs. gate resistance** 

**==> picture [177 x 166] intentionally omitted <==**

**Figure 18: Capacitance variations** 

**==> picture [181 x 161] intentionally omitted <==**

**Figure 19: Gate charge vs. gate-emitter voltage** 

**==> picture [179 x 162] intentionally omitted <==**

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**Electrical characteristics** 

**==> picture [442 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20: Diode VF vs. forward current  Figure 21: Reverse recovery current vs. diode<br>current slope<br>**----- End of picture text -----**<br>


**==> picture [464 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22: Reverse recovery time vs. diode current  Figure 23: Reverse recovery charge vs. diode<br>slope  current slope<br>**----- End of picture text -----**<br>


**==> picture [452 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24: Reverse recovery energy vs. diode  Figure 25: Thermal impedance<br>current slope<br>ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>10-1<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>10 -2<br>10-5 10 -4 10-3 10 -2 10 -1 tp [(s)]<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [370 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26: Test circuit for inductive load  Figure 27: Gate charge test circuit<br>switching<br>**----- End of picture text -----**<br>


**==> picture [153 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A<br>C<br>G — L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G N D.U.T<br>+ RG se E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


## **Figure 28: Switching waveform** 

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

DocID029672 Rev 3 

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**STGWT20HP65FB** 

**Package information** 

## **4.1 TO-3P package information** 

**Figure 29: TO-3P package outline** 

**==> picture [406 x 517] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_B<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 8: TO-3P package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.60|4.80|5.00|
|A1|1.45|1.50|1.65|
|A2|1.20|1.40|1.60|
|b|0.80|1.00|1.20|
|b1|1.80|2.00|2.20|
|b2|2.80|3.00|3.20|
|c|0.55|0.60|0.75|
|D|19.70|19.90|20.10|
|D1|13.70|13.90|14.10|
|E|15.40|15.60|15.80|
|E1|13.40|13.60|13.80|
|E2|9.40|9.60|9.90|
|e|5.15|5.45|5.75|
|L|19.80|20.00|20.20|
|L1|3.30|3.50|3.70|
|L2|18.20|18.40|18.60|
|ØP|3.30|3.40|3.50|
|ØP1|3.10|3.20|3.30|
|Q|4.80|5.00|5.20|
|Q1|3.60|3.80|4|



DocID029672 Rev 3 

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**STGWT20HP65FB** 

**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|31-Aug-2016|1|First release.|
|28-Sep-2016|2|Datasheetpromoted frompreliminarytoproduction data.|
|13-Dec-2016|3|Updated_Figure 1: "Internal schematic diagram"_.<br>Updated_Table 4: "Static characteristics"_and_Table 7: "Diode switching_<br>_characteristics (inductive load)"_.<br>Added_Figure 20: "Diode VF vs. forward current"_,_Figure 21: "Reverse_<br>_recovery current vs. diode current slope"_,_Figure 22: "Reverse recovery_<br>_time vs. diode current slope"_,_Figure 23: "Reverse recovery charge vs._<br>_diode current slope"_and_Figure 24: "Reverse recovery energy vs. diode_<br>_current slope"_.<br>Updated_Figure 2: "Output characteristics (TJ = 25 °C)"_,_Figure 12:_<br>_"Switching energy vs. collector current"_and_Figure 17: "Switching time_<br>_vs. gate resistance"_.<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

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No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

DocID029672 Rev 3 

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