# IGBT, 40 A, 1.55 V, 168 W, 650 V, TO-3P, 3 Pins

![Product image](https://novapart.co/image/farnell:2889927/)

**URL**: https://novapart.co/products/STGWT20H65FB/igbt-40-a-155-v-168-w-650-to-3p-3-pins
**SKU**: STGWT20H65FB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.0100
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 168W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-3P |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2889927/)

## **STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

Trench gate field-stop IGBT, HB series 650 V, 20 A high speed 

**Datasheet** - **production data** 

**==> picture [186 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>1<br>TO-3P<br>1<br>3<br>3<br>2 2<br>1 1<br>TO-247 TO-3PF<br>**----- End of picture text -----**<br>


## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- VCE(sat) = 1.55 V (typ.) @ IC = 20 A 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

- Lead free package 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

**==> picture [132 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (2, TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


- Photovoltaic inverters 

- High frequency converters 

## **Description** 

These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGFW20H65FB|GFW20H65FB|TO-3PF|Tube|
|STGW20H65FB|GW20H65FB|TO-247|Tube|
|STGWT20H65FB|GWT20H65FB|TO-3P|Tube|



_www.st.com_ 

August 2014 

DocID026826 Rev 1 

1/20 

This is information on a product in full production. 

**Contents** 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
||4.1<br>TO-3PF, STGFW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.2<br>TO-247, STGW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||4.3<br>TO-3P, STGWT20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|



2/20 

DocID026826 Rev 1 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-247**<br>**TO-3P**|**TO-3PFP**||
|VCES|Collector-emitter voltage (VGE= 0)|650||V|
|IC|Continuous collector current at TC= 25 °C|40||A|
|IC|Continuous collector current at TC= 100 °C|20||A|
|ICP<br>(1)|Pulsed collector current|80||A|
|VGE|Gate-emitter voltage|±20||V|
|PTOT|Total dissipation at TC= 25 °C|168|52|W|
|TSTG|Storage temperature range|- 55 to 150||°C|
|TJ|Operating junction temperature|- 55 to 175||°C|



1. Pulse width limited by maximum junction temperature. **Table 3. Thermal data Value Symbol Parameter TO-247 Unit TO-3PF TO-3P** RthJC Thermal resistance junction-case 2.9 0.9 °C/W RthJA Thermal resistance junction-ambient 50 °C/W ~~—E~~ 

DocID026826 Rev 1 

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**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

**==> picture [404 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
Table 4. Static characteristics<br>Symbol Parameter Test conditions Min. Typ. Max. Unit<br>Collector-emitter<br>V(BR)CES breakdown voltage IC = 2 mA 650 V<br>(VGE = 0)<br>ee<br>VGE = 15 V, IC = 20 A 1.55 2<br>ee<br>Collector-emitter saturation  VGE = 15 V, IC = 20 A 1.65<br>VCE(sat) voltage TJ = 125 °C V<br>VGE = 15 V, IC = 20 A<br>1.75<br>TJ = 175 °C<br>|) LTFre e ee<br>VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V<br>a es es ee Ge ee<br>Collector cut-off current<br>ICES (VGE = 0) VCE = 650 V 25 µA<br>i<br>Gate-emitter leakage<br>IGES current (VCE = 0) VGE = ± 20 V 250 nA<br>i<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|2764|-|pF|
|Coes|Output capacitance||-|80|-|pF|
|Cres|Reverse transfer<br>capacitance||-|60|-|pF|
|Qg|Total gate charge|VCC= 520 V, IC= 20 A,<br>VGE= 15 V, see_Figure 27_|-|120|-|nC|
|Qge|Gate-emitter charge||-|20|-|nC|
|Qgc|Gate-collector charge||-|50|-|nC|



4/20 

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**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

|**Symbol**<br>~~a~~<br>~~es~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~|~~|**Max.**<br>~~ee~~<br>~~||~~|**Unit**<br>~~ee~~<br>~~|~~|
|---|---|---|---|---|---|---|
|td(on)<br>~~se~~<br>~~es~~<br>~~es~~|Turn-on delay time<br>~~se~~<br>~~ee~~|VCE= 400 V, IC= 20 A,<br>RG= 10Ω, VGE= 15 V,<br>see_Figure 26_|-<br>~~|~~<br>~~_|~~|30<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~||~~<br>~~|~~|ns<br>~~|~~<br>~~|~~|
|tr<br>~~se~~<br>~~es~~<br>~~es~~<br>~~a~~|Current rise time<br>~~se~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~_|~~<br>~~_|~~|11<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>||-<br>~~|~~<br>~~||~~<br>~~|~~<br>||ns<br>~~|~~<br>~~|~~|
|(di/dt)on<br>~~es~~<br>~~es~~<br>~~a~~<br>~~a~~|Turn-on current slope<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~<br>~~|~~|1400<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>|<br>~~|~~<br>~~||~~|A/µs<br>~~|~~<br>~~|~~<br>~~|~~|
|td(off)<br>~~es~~<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off delay time<br>~~ee~~<br>~~ee~~<br>~~ee~~||~~_ |~~<br>~~_ |~~<br>~~|~~|139<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>|<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~|
|tf<br>~~a~~<br>~~a~~<br>~~a~~|Current fall time<br>~~ee~~||-<br>~~|~~<br>~~|~~|20<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|Eon<br>(1)<br>~~a~~<br>~~a~~<br>~~es~~|Turn-on switching losses||-<br>~~|~~|77<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|µJ<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|Eoff<br>(2)<br>~~a~~<br>~~es~~<br>~~es~~|Turn-off switching losses<br>~~ee~~||-<br>~~|~~<br>~~_|~~|170<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~|µJ<br>~~|~~<br>~~|~~<br>~~|~~|
|Ets<br>~~es~~<br>~~es~~<br>~~a~~|Total switching losses<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~|247<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>||-<br>~~||~~<br>~~|~~<br>||µJ<br>~~|~~|
|td(on)<br>~~es~~<br>~~es~~<br>~~a~~<br>~~a~~|Turn-on delay time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VCE= 400 V, IC= 20 A,<br>RG= 10Ω, VGE= 15 V,<br>TJ= 175 °C, see_Figure 26_|-<br>~~_|~~<br>~~_|~~<br>~~|~~|29<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>|<br>~~|~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~|
|tr<br>~~es~~<br>~~a~~<br>~~a~~<br>~~a~~|Current rise time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_ |~~<br>~~_ |~~<br>~~|~~|12<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>|<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~|
|(di/dt)on<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on current slope<br>~~ee~~||-<br>~~|~~<br>~~|~~|1352<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|A/µs<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|td(off)<br>~~a~~<br>~~a~~<br>~~es~~|Turn-off delay time||-<br>~~|~~|147<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|tf<br>~~a~~<br>~~es~~<br>~~es~~|Current fall time<br>~~ee~~||-<br>~~|~~<br>~~_|~~|38<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~|ns<br>~~|~~<br>~~|~~<br>~~|~~|
|Eon<br>(1)<br>~~es~~<br>~~es~~<br>~~a~~|Turn-on switching losses<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~|88<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>||-<br>~~||~~<br>~~|~~<br>||µJ<br>~~|~~|
|Eoff<br>(2)<br>~~es~~<br>~~es~~<br>~~a~~|Turn-off switching losses<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~|353<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>|<br>~~||~~|µJ<br>~~|~~<br>~~|~~|
|Ets<br>~~es~~<br>~~a~~|Total switching losses<br>~~ee~~<br>~~ee~~||-<br>~~_ |~~<br>~~_ |~~<br>~~i~~|441<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~i~~<br>~~|~~|-<br>~~|~~<br>|<br>~~i~~<br>~~||~~|µJ<br>~~i~~<br>~~|~~|



2. Turn-off losses include also the tail of the collector current. 

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**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curve)** 

## **Figure 2. Output characteristics (TJ = 25°C)** 

## **Figure 3. Output characteristics (TJ = 175°C)** 

**==> picture [460 x 614] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG260820141108FSR GIPG260820141120FSR<br>IC IC<br>(A) (A)<br>70 VGE =15 V 13V 80 VGE =15 V 13V<br>11V<br>11V<br>60 60<br>9V 9V<br>50 50<br>40 40<br>30 30<br>20 20<br>7V<br>10 10<br>7V<br>0 0<br>0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)<br>Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature<br>for TO-247 and TO-3P<br>GIPG260820141127FSR GIPG260820141136FSR<br>IC IC<br>(A) (A)<br>25 °C<br>40<br>70<br>VCE =10 V 175 °C<br>60<br>30<br>50<br>20<br>40<br>30<br>10<br>20<br>VGE ≥ 15V, TJ ≤ 175 °C<br>10 0<br>VAS 7 8 9 10 VGE(V) 0 25 50 75 100 125 150 TC(°C)<br>Figure 6. Collector current vs. case temperature  Figure 7. VCE(sat) vs. junction temperature<br>for TO-3PF<br>GIPG260820141147FSR GIPG260820141153FSR<br>IC VCE(sat)<br>(A) (V) VGE= 15V<br>IC= 40A<br>25 2.2<br>20 2.0<br>15 1.8<br>IC= 20A<br>10 1.6<br>5 1.4<br>IC= 10A<br>VGE ≥ 15V, TJ ≤ 175 °C<br>0 1.2<br>NI 0 25 50 75 100 125 150 TC(°C) -50 0 50 100 150 TJ(°C)<br>6/20 DocID026826 Rev 1<br>**----- End of picture text -----**<br>


**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

**Figure 8. Power dissipation vs. case temperature for TO-247 and TO-3P** 

**Figure 9. Power dissipation vs. case temperature for TO-3PF** 

**==> picture [424 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG280120141359FSR GIPG260820141204FSR<br>Ptot Ptot<br>(W) (W)<br>160<br>50<br>140<br>120 40<br>100<br>30<br>80<br>60 20<br>40<br>10<br>20<br>VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C<br>0 0<br>0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C)<br>**----- End of picture text -----**<br>


**Figure 10. Forward bias safe operating area for TO-247 and TO-3P** 

**Figure 11. Forward bias safe operating area for TO-3PF** 

**==> picture [422 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG260820141333FSR GIPG260820141339FSR<br>IC IC<br>(A) NX sSSe=s (A)<br>= SK<br>|<br>“Fe N<br>10 10<br>10 μs 10 μs<br>oan<br>100 μs i 100 μs<br>!<br>1 1 ms 1 1 ms |<br>(single pulse T C = 25°C,  (single pulse TC= 25°C,<br>TJ ≤ 175°C; VGE=15V) TJ ≤ 175°C; VGE=15V)<br>0.1 0.1<br>1 10 100 VCE(V) 1 10 100 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 12. Collector current vs. switching frequency for TO-247 and TO-3P** 

**Figure 13. Collector current vs. switching frequency for TO-3PF** 

**==> picture [424 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ic [A] GIPG260820141342FSR Ic [A] GIPG260820141347FSR<br>60<br>Tc=80°C 20 Tc=80°C<br>50 :<br>40 wroreteretentet Tc=100  [°] C  | 15 —~PN il<br>XN XN Tc=100  [°] C<br>\<br>30 axa. NS 10 hi ‘ Hill<br>\<br>|<br>20 \ |<br>rectangular current shape, 5 rectangular current shape, IN aS<br>10 (duty cycle=0.5, V CC = 400V, R G =4.7Ω, (duty cycle=0.5, VCC = 400V, RG=4.7Ω,<br>VGE = 0/15 V, TJ =175°C) VGE = 0/15 V, TJ =175°C)<br>0 0 aihiii<br>1 10 f [kHz]  1 10 f [kHz]<br>**----- End of picture text -----**<br>


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**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

**Figure 14. Normalized VGE(th) vs. junction temperature** 

**Figure 15. Normalized V(BR)CES vs. junction temperature** 

**==> picture [429 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM16060v1 AM16059v1<br>VGE(th) V(BR)CES<br>(norm) (norm)<br>VCE= VGE 1.1 IC= 1mA<br>IC= 1mA<br>1.0<br>0.9<br>1.0<br>0.8<br>0.7<br>0.6 0.9<br>-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Switching losses vs temperature** 

**Figure 17. Switching losses vs gate resistance** 

**==> picture [427 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG260820141404FSR GIPG260820141408FSR<br>E (μJ) E (μJ)<br>VCC= 400V, VGE= 15V 550 VCC= 400V, VGE= 15V<br>350 R g = 10Ω, I C = 20A IC= 20A, TJ= 175 °C<br>EOFF<br>450<br>EOFF<br>250<br>350<br>EON<br>250<br>150 EON<br>150<br>50<br>20 40 60 80 100 120 140 160 TJ(°C) 503 10 17 24 31 38 45 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter voltage** 

**==> picture [426 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG260820141358FSR GIPG260820141413FSR<br>E (μJ) E (μJ)<br>VCC= 400V, VGE= 15V TJ= 175°C, VGE= 15V<br>EOFF<br>Rg= 10Ω, TJ= 175°C) EOFF 400 Rg= 10Ω, IC= 20A<br>600<br>300<br>400<br>200<br>EON<br>200<br>EON 100<br>0 0<br>0 10 20 30 40 IC(A) 150 250 350 450 VCE(V)<br>**----- End of picture text -----**<br>


8/20 

DocID026826 Rev 1 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

## **Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance** 

**==> picture [460 x 639] intentionally omitted <==**

**----- Start of picture text -----**<br>
t(ns) GIPG260820141417FSR t(ns) TJ= 175 ° C, VGE= 15V GIPG260820141422FSR<br>IC= 20A, VCC= 400V<br>tdoff<br>tdoff<br>100 100 tdon<br>tf<br>tdon<br>tf<br>10 10<br>tr<br>tr TJ= 175°C, VGE= 15V<br>Rg= 10Ω, VCC= 400V<br>1 10<br>0 10 20 30 40 IC(A) 0 10 20 30 40 Rg(Ω)<br>Figure 22. Capacitance variations Figure 23. Gate charge vs. gate-emitter voltage<br>GIPG260820141434FSR GIPG260820141445FSR<br>C(pF) VGE<br>10000 (V)16 VCC= 520V, IC= 20A<br>IG= 1mA<br>14<br>Cies<br>12<br>1000<br>10<br>8<br>6<br>100<br>4<br>Coes<br>Cres<br>2<br>10<br>0.1 1 10 VCE(V) 00 40 80 120 Qg(nC)<br>BA<br>DocID026826 Rev 1 9/20<br>**----- End of picture text -----**<br>


9/20 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

**==> picture [295 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. Thermal impedance for TO-247 and TO-3P<br>ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>et<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2<br>10<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


10/20 

DocID026826 Rev 1 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Electrical characteristics** 

**==> picture [309 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. Thermal impedance for TO-3PF<br>ZthTOF3T_A<br>K<br>=<br>δ 0.5<br>0.2<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2 ai<br>10 -5 -4 -3 -2 -1 0<br>10 10 10 10 10 10 tp [(s)]<br>**----- End of picture text -----**<br>


DocID026826 Rev 1 

11/20 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

**Test circuits** 

## **3 Test circuits** 

**Figure 26. Test circuit for inductive load Figure 27. Gate charge test circuit switching** 

**==> picture [263 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01504v1 AM01505v1<br>**----- End of picture text -----**<br>


**Figure 28. Switching waveform** 

**==> picture [223 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
90%<br>VG fe 10%<br>| ————~, _ 90%<br>VCE Tr(Voff) 10%<br>Tcross<br>| |; Ee.<br>90%<br>| SS! |<br>IC Td(on)Ton Tr(Ion) Td(offToff) Tf 10%<br>~——t— —<br>AM01506v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO-3PF, STGFW20H65FB** 

**Figure 29. TO-3PF drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7627132_D<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 7. TO-3PF mechanical data** 

||**Table 7. TO-3PF mechanical data**|**Table 7. TO-3PF mechanical data**|**Table 7. TO-3PF mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee~~<br>~~ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|5.30|~~ee~~|5.70<br>~~ee~~|
|C<br>~~a~~|2.80||3.20|
|D<br>~~a~~|3.10||3.50|
|D1<br>~~a~~|1.80<br>||2.20<br>|
|E<br>~~Ge~~|0.80<br>~~Ge~~|~~Ge~~|1.10<br>~~Ge~~|
|F<br>~~Ge~~|0.65<br>~~Ge~~|~~Ge~~|0.95<br>~~Ge~~|
|F2<br>~~a~~|1.80||2.20|
|G<br>~~a~~|10.30||11.50|
|G1<br>~~a~~||5.45||
|H<br>~~a~~|15.30<br>||15.70<br>|
|L<br>~~Ge~~|9.80<br>~~Ge~~|10<br>~~Ge~~|10.20<br>~~Ge~~|
|L2<br>~~Ge~~|22.80<br>~~Ge~~|~~Ge~~|23.20<br>~~Ge~~|
|L3<br>~~a~~|26.30||26.70|
|L4<br>~~a~~|43.20||44.40|
|L5<br>~~a~~|4.30||4.70|
|L6<br>~~a~~|24.30<br>||24.70<br>|
|L7<br>~~Ge~~|14.60<br>~~Ge~~|~~Ge~~|15<br>~~Ge~~|
|N<br>~~Ge~~|1.80<br>~~Ge~~|~~Ge~~|2.20<br>~~Ge~~|
|R<br>~~a~~|3.80||4.20|
|Dia<br>~~a~~|3.40||3.80|



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**Package mechanical data** 

## **4.2 TO-247, STGW20H65FB** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 30. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Package mechanical data** 

## **4.3 TO-3P, STGWT20H65FB** 

**==> picture [121 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 31. TO-3P drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-3P mechanical data** 

||**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.60|4.80<br>~~ee ~~|5<br> ~~ee~~|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1.00|1.20|
|b1<br>~~a~~|1.80|2.00|2.20|
|b2<br>~~a~~<br>~~es~~|2.80|3.00|3.20|
|c<br>~~es~~|0.55|0.60|0.75|
|D<br>~~es~~<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~|13.70|13.90|14.10|
|E<br>~~a~~|15.40|15.60|15.80|
|E1<br>~~a~~|13.40|13.60|13.80|
|E2<br>~~a~~<br>~~es~~|9.40|9.60|9.90|
|e<br>~~es~~|5.15|5.45|5.75|
|L<br>~~es~~<br>~~a~~|19.80|20|20.20|
|L1<br>~~a~~|3.30|3.50|3.70|
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~|3.30|3.40|3.50|
|øP1<br>~~a~~<br>~~es~~|3.10|3.20|3.30|
|Q<br>~~es~~|4.80|5|5.20|
|Q1<br>~~es~~<br>~~a~~|3.60|3.80|4|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**||**Changes**|
|---|---|---|---|
|28-Aug-2014|1|Initial release.||



DocID026826 Rev 1 

19/20 

**STGFW20H65FB, STGW20H65FB, STGWT20H65FB** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

20/20 DocID026826 Rev 1 



## Links

- [View this product on Novapart](https://novapart.co/products/STGWT20H65FB/igbt-40-a-155-v-168-w-650-to-3p-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwt20h65fb/igbt-single-650v-40a-to-3p/dp/2889927)
---

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