# IGBT, 16 A, 1.85 V, 167 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/STGWA8M120DF3/igbt-16-a-185-v-167-w-12-kv-to-247-3-pins
**SKU**: STGWA8M120DF3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3300
**Stock**: 10+
**Lead Time**: 120 days (indicative)
## Description
DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | M |
| Power Dissipation | 167W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 16A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2729672/)
## **STGW8M120DF3, STGWA8M120DF3**
## Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss
Datasheet - production data
## **Features**
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 8 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
## **Applications**
- Industrial drives
- UPS
- Solar
- Welding
**Figure 1: Internal schematic diagram**
## **Description**
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW8M120DF3|G8M120DF3|TO-247|Tube|
|STGWA8M120DF3||TO-247 long leads||
This is information on a product in full production.
October 2017 DocID029337 Rev 3
1/17
_www.st.com_
|**Contents**
**STGW8M120DF3, STGWA8M120DF3**|**Contents**
**STGW8M120DF3, STGWA8M120DF3**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 11**|
|**4**|**Package information ..................................................................... 12**|
||4.1
TO-247 package information ........................................................... 12|
||4.2
TO-247 long leads package information ......................................... 14|
|**5**|**Revision history ............................................................................ 16**|
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DocID029337 Rev 3
**STGW8M120DF3, STGWA8M120DF3**
**Electrical ratings**
## **1 Electrical ratings**
## **Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|1200|V|
|IC|Continuous collector current at TC= 25 °C|16|A|
|IC|Continuous collector current at TC= 100 °C|8|A|
|ICP_(1)_|Pulsed collector current|32|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|16|A|
|IF|Continuous forward current at TC= 100 °C|8|A|
|IFP_(1)_|Pulsed forward current|32|A|
|PTOT|Total dissipation at TC= 25 °C|167|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.9|°C/W|
|RthJC|Thermal resistancejunction-case diode|1.47|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|
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**STGW8M120DF3, STGWA8M120DF3**
**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 2 mA|1200|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 8 A||1.85|2.3|V|
|||VGE= 15 V, IC= 8 A,
TJ= 125 °C||2.1|||
|||VGE= 15 V, IC= 8 A,
TJ= 175 °C||2.2|||
|VF|Forward on-voltage|IF= 8 A||2.4|3.35|V|
|||IF= 8 A, TJ= 125 °C||1.75|||
|||IF= 8 A, TJ= 175 °C||1.55|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 500µA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 1200 V|||25|µA|
|IGES|Gate-emitter leakage current|VGE= ±20 V, VCE= 0 V|||±250|nA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|542|-|pF|
|Coes|Output capacitance||-|74.4|-||
|Cres|Reverse transfer capacitance||-|21|-||
|Qg|Totalgate charge|VCC= 960 V, IC= 8 A,
VGE= 0 to 15 V
(see_Figure 30: " Gate_
_charge test circuit"_)|-|32|-|nC|
|Qge|Gate-emitter charge||-|4.5|-||
|Qgc|Gate-collector charge||-|18.5|-||
4/17
DocID029337 Rev 3
**Electrical characteristics**
## **STGW8M120DF3, STGWA8M120DF3**
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 600 V, IC= 8 A,
VGE= 15 V, RG= 33 Ω
(see_Figure 29: " Test circuit_
_for inductive load switching"_)||20|-|ns|
|tr|Current rise time|||8.4|-|ns|
|(di/dt)on|Turn-on current slope|||800|-|A/µs|
|td(off)|Turn-off-delaytime|||126|-|ns|
|tf|Current fall time|||136|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.39|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.37|-|mJ|
|Ets|Total switchingenergy|||0.76|-|mJ|
|td(on)|Turn-on delaytime|VCE= 600 V, IC= 8 A,
VGE= 15 V, RG= 33 Ω,
TJ= 175 °C
(see_Figure 29: " Test circuit_
_for inductive load switching"_)||19|-|ns|
|tr|Current rise time|||9.8|-|ns|
|(di/dt)on|Turn-on current slope|||656|-|A/µs|
|td(off)|Turn-off-delaytime|||134|-|ns|
|tf|Current fall time|||222|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.66|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.58|-|mJ|
|Ets|Total switchingenergy|||1.24|-|mJ|
|tsc|Short-circuit withstand time|VCC≤ 600 V, VGE= 15 V,
TJstart≤ 150 °C|10||-|µs|
## **Notes:**
(1)Including the reverse recovery of the diode
(2)Including the tail of the collector current
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 8 A, VR= 600 V,
VGE= 15 V, RG= 33 Ω
(di/dt = 1000 A/µs)
(see_Figure 29: " Test circuit_
_for inductive load switching"_)|-|103|-|ns|
|Qrr|Reverse recoverycharge||-|0.87|-|µC|
|Irrm|Reverse recoverycurrent||-|19.2|-|A|
|dIrr/dt|Peak rate of fall of reverse
recovery current during tb||-|720|-|A/µs|
|Err|Reverse recoveryenergy||-|211|-|µJ|
|trr|Reverse recoverytime|IF= 8 A, VR= 600 V,
VGE= 15 V, TJ= 175 °C,
RG= 33 Ω (di/dt = 840 A/µs)
(see_Figure 29: " Test circuit_
_for inductive load switching"_)|-|280|-|ns|
|Qrr|Reverse recoverycharge||-|1.9|-|µC|
|Irrm|Reverse recoverycurrent||-|21.8|-|A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|450|-|A/µs|
|Err|Reverse recoveryenergy||-|404|-|µJ|
DocID029337 Rev 3
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**Electrical characteristics STGW8M120DF3, STGWA8M120DF3 2.1 Electrical characteristics (curves)**
**==> picture [458 x 190] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Power dissipation vs case temperature Figure 3: Collector current vs case temperature
**----- End of picture text -----**
**Figure 4: Output characteristics (TJ = 25 °C)**
**==> picture [178 x 164] intentionally omitted <==**
**Figure 5: Output characteristics (TJ = 175 °C)**
**==> picture [178 x 164] intentionally omitted <==**
**Figure 6: VCE(sat) vs junction temperature**
**==> picture [190 x 163] intentionally omitted <==**
**Figure 7: VCE(sat) vs collector current**
**==> picture [187 x 164] intentionally omitted <==**
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**==> picture [474 x 12] intentionally omitted <==**
**----- Start of picture text -----**
STGW8M120DF3, STGWA8M120DF3 Electrical characteristics
**----- End of picture text -----**
**==> picture [218 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Figure 8: Collector current vs switching frequency
**----- End of picture text -----**
**==> picture [176 x 163] intentionally omitted <==**
**==> picture [185 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Figure 9: Forward bias safe operating area
**----- End of picture text -----**
**==> picture [181 x 163] intentionally omitted <==**
**Figure 10: Transfer characteristics Figure 11: Diode VF vs forward current**
**==> picture [177 x 164] intentionally omitted <==**
**==> picture [171 x 162] intentionally omitted <==**
**==> picture [444 x 201] intentionally omitted <==**
**----- Start of picture text -----**
Figure 12: Normalized VGE(th) vs junction Figure 13: Normalized V(BR)CES vs junction
temperature temperature
**----- End of picture text -----**
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**==> picture [474 x 202] intentionally omitted <==**
**----- Start of picture text -----**
Electrical characteristics STGW8M120DF3, STGWA8M120DF3
Figure 14: Capacitance variations Figure 15: Gate charge vs gate-emitter voltage
**----- End of picture text -----**
**Figure 16: Switching energy vs collector current**
**==> picture [177 x 164] intentionally omitted <==**
**Figure 17: Switching energy vs gate resistance**
**==> picture [177 x 164] intentionally omitted <==**
**Figure 18: Switching energy vs temperature**
**==> picture [181 x 162] intentionally omitted <==**
**Figure 19: Switching energy vs collector emitter voltage**
**==> picture [181 x 164] intentionally omitted <==**
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**Electrical characteristics**
**Figure 20: Short-circuit time and current vs VGE**
**==> picture [180 x 163] intentionally omitted <==**
**Figure 21: Switching times vs collector current**
**==> picture [172 x 163] intentionally omitted <==**
**==> picture [452 x 198] intentionally omitted <==**
**----- Start of picture text -----**
Figure 22: Switching times vs gate resistance Figure 23: Reverse recovery current vs diode
current slope
**----- End of picture text -----**
**==> picture [445 x 199] intentionally omitted <==**
**----- Start of picture text -----**
Figure 24: Reverse recovery time vs diode Figure 25: Reverse recovery charge vs diode current
current slope slope
**----- End of picture text -----**
DocID029337 Rev 3
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**STGW8M120DF3, STGWA8M120DF3**
## **Electrical characteristics**
**Figure 26: Reverse recovery energy vs diode current slope**
**==> picture [196 x 164] intentionally omitted <==**
**Figure 27: Thermal impedance for IGBT**
**==> picture [163 x 165] intentionally omitted <==**
**Figure 28: Thermal impedance for diode**
**==> picture [175 x 169] intentionally omitted <==**
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**STGW8M120DF3, STGWA8M120DF3**
**Test circuits**
## **3 Test circuits**
**==> picture [401 x 174] intentionally omitted <==**
**----- Start of picture text -----**
Figure 29: Test circuit for inductive load Figure 30: Gate charge test circuit
switching
A A
C
G L=100 µH
E B
B
C 3.3µF 1000µF VCC
G D.U.T
+ RG E
-
AM01504v1
**----- End of picture text -----**
**Figure 31: Switching waveform**
**Figure 32: Diode reverse recovery waveform**
**==> picture [144 x 70] intentionally omitted <==**
DocID029337 Rev 3
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**STGW8M120DF3, STGWA8M120DF3**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO-247 package information**
**Figure 33: TO-247 package outline**
**==> picture [406 x 486] intentionally omitted <==**
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**STGW8M120DF3, STGWA8M120DF3**
**Package information**
**Table 8: TO-247 package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|
DocID029337 Rev 3
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**STGW8M120DF3, STGWA8M120DF3**
**Package information**
## **4.2 TO-247 long leads package information**
**Figure 34: TO-247 long leads package outline**
~~©~~ 14/17 DocID029337 Rev 3
**Package information**
## **STGW8M120DF3, STGWA8M120DF3**
**Table 9: TO-247 long leads package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|
DocID029337 Rev 3
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**STGW8M120DF3, STGWA8M120DF3**
**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-May-2016|1|First release.|
|19-Sep-2016|2|Datasheet promoted from preliminary to production data.
Updated_Table 2: "Absolute maximum ratings"_.
Updated_Section 2: "Electrical characteristics"_.
Added_Section 2.1: "Electrical characteristics (curves)"_.|
|31-Oct-2017|3|Updated package silhouette on cover page.
Updated_Table 4: "Static characteristics"_and_Table 5: "Dynamic_
_characteristics"_.
Minor text changes|
16/17
DocID029337 Rev 3
## **STGW8M120DF3, STGWA8M120DF3**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
DocID029337 Rev 3
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## Links
- [View this product on Novapart](https://novapart.co/products/STGWA8M120DF3/igbt-16-a-185-v-167-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwa8m120df3/igbt-single-1-2kv-16a-to-247-3/dp/2729672)
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