# IGBT, 100 A, 1.5 V, 300 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3011597/)

**URL**: https://novapart.co/products/STGWA50IH65DF/igbt-100-a-15-v-300-w-650-to-247-3-pins
**SKU**: STGWA50IH65DF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6900
**Stock**: 200+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | IH |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3011597/)

## **STGWA50IH65DF** 

## Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package 

Datasheet - production data 

## **Features** 

- Designed for soft-commutation only 

- Maximum junction temperature: TJ = 175 °C 

- VCE(sat) = 1.5 V (typ.) @ IC = 50 A 

- Minimized tail current 

- Tight parameter distribution 

- Low thermal resistance 

- Low voltage drop freewheeling co-packaged diode 

## **Applications** 

- Induction heating 

**Figure 1: Internal schematic diagram** 

- Resonant converters 

- Microwave oven 

C (2) **Description** The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in G (1) conduction and switching losses for softcommutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications. Sc12850_no_tab E (3) 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGWA50IH65DF|G50IH65DF|TO-247 longleads|Tube|



October 2017 DocID029659 Rev 2 

1/14 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STGWA50IH65DF**|**Contents**<br>**STGWA50IH65DF**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 10**|
|**4**|**Package information ..................................................................... 11**|
||4.1<br>TO-247 long leads package information ......................................... 11|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|100|A|
||Continuous collector current at TC= 100 °C|50||
|ICP_(1)_|Pulsed collector current|150||
|VGE|Gate-emitter voltage|± 20|V|
|IF|Continuous forward current at TC= 25 °C|50|A|
||Continuous forward current at TC= 100 °C|25||
|IFP_(1)_|Pulsed forward current|150||
|PTOT|Total dissipation at TC= 25 °C|300|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||



## **Notes:** 

(1)Pulse width limited by maximum junction temperature. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.5|°C/W|
||Thermal resistancejunction-case diode|1.47||
|RthJA|Thermal resistance junction-ambient|50||



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 4: Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter<br>breakdown voltage|VGE= 0 V, IC= 250 μA|650|||V|
|VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 50 A||1.50|2.00||
|||VGE= 15 V, IC= 50 A, TJ= 125 °C||1.75|||
|||VGE= 15 V, IC= 50 A, TJ= 175 °C||1.90|||
|VF|Forward on-voltage|IF= 25 A||1.75|2.50||
|||IF= 25 A, TJ= 125 °C||1.50|||
|||IF= 25 A, TJ= 175 °C||1.40|||
|||IF= 50 A||2.15|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7||
|ICES|Collector cut-off<br>current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 5: Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz, VGE= 0 V|-|2980|-|pF|
|Coes|Output capacitance||-|150|-||
|Cres|Reverse transfer<br>capacitance||-|81|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 50 A,<br>VGE= 0 to 15 V<br>(see_Figure 24: "Gate charge test_<br>_circuit"_)|-|158|-|nC|
|Qge|Gate-emitter charge||-|25|-||
|Qgc|Gate-collector charge||-|72|-||



**Table 6: IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)|Turn-off-delaytime|VCC= 400 V, IC= 50 A,<br>VGE= 15 V, RG= 22 Ω<br>(see_Figure 22: "Test circuit for_<br>_inductive load switching"_)|-|260|-|ns|
|tf|Current fall time||-|17|-||
|td(off)|Turn-off-delaytime|VCC= 400 V, IC= 50 A,<br>VGE= 15 V, RG= 22 Ω TJ= 175 °C<br>(see_Figure 22: "Test circuit for_<br>_inductive load switching"_)|-|270|-|ns|
|tf|Current fall time||-|24|-||



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**Electrical characteristics** 

**Table 7: IGBT switching characteristics (snubbed inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eoff_(1)_|Turn-off switching<br>energy|VCC= 320 V, RG= 10 Ω, IC= 50 A,<br>L = 100 μH, Csnub= 22 nF<br>(see_Figure 23: "Test circuit for_<br>_capacitive load switching"_)|-|284|-|μJ|
|||VCC= 320 V, RG= 10 Ω, IC= 50 A,<br>L = 100 μH, Csnub= 22 nF<br>TJ= 175 °C<br>(see_Figure 23: "Test circuit for_<br>_capacitive load switching"_)|-|469|-||



## **Notes:** 

(1)Including the tail of the collector current. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**==> picture [458 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Power dissipation vs. case temperature   Figure 3: Collector current vs. case temperature<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics (TJ = 25 °C)** 

**==> picture [178 x 164] intentionally omitted <==**

**Figure 5: Output characteristics (TJ = 175 °C)** 

**==> picture [178 x 164] intentionally omitted <==**

**Figure 6: VCE(sat) vs. junction temperature** 

**==> picture [190 x 163] intentionally omitted <==**

**Figure 7: VCE(sat) vs. collector current** 

**==> picture [186 x 164] intentionally omitted <==**

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**Electrical characteristics** 

## **STGWA50IH65DF** 

**Figure 8: Forward bias safe operating area** 

**==> picture [196 x 163] intentionally omitted <==**

**==> picture [146 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9: Transfer characteristics<br>**----- End of picture text -----**<br>


**==> picture [178 x 163] intentionally omitted <==**

**==> picture [440 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10: Diode VF vs. forward current  Figure 11: Normalized VGE(th) vs. junction<br>temperature<br>**----- End of picture text -----**<br>


**==> picture [449 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12: Normalized V(BR)CES vs. junction  Figure 13: Capacitance variations<br>temperature<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 14: Gate charge vs. gate-emitter voltage Figure 15: Switching-off energy vs. collector current** 

**==> picture [183 x 163] intentionally omitted <==**

**==> picture [176 x 164] intentionally omitted <==**

**==> picture [457 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16: Switching-off energy vs. temperature  Figure 17: Switching-off energy vs. collector emitter<br>voltage<br>**----- End of picture text -----**<br>


**Figure 18: Switching-off times vs. collector current Figure 19: Switching-off energy vs snubber capacitance** 

**==> picture [173 x 164] intentionally omitted <==**

**==> picture [185 x 162] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 20: Thermal impedance** 

**==> picture [207 x 210] intentionally omitted <==**

**Figure 21: Thermal impedance for diode** 

**==> picture [224 x 216] intentionally omitted <==**

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**Test circuits** 

## **3** 

## **Test circuits** 

**Figure 22: Test circuit for inductive load switching Figure 23: Test circuit for snubbed inductive load switching** 

**==> picture [192 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


**Figure 24: Gate charge test circuit** 

**==> picture [224 x 141] intentionally omitted <==**

**==> picture [78 x 94] intentionally omitted <==**

**Figure 25: Switching waveform** 

**==> picture [161 x 79] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 TO-247 long leads package information** 

**Figure 26: TO-247 long leads package outline** 

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**Package information** 

**Table 8: TO-247 long leads package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



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**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|02-Sep-2016|1|First release.|
|05-Oct-2017|2|Modified title, silhouette, features and description.<br>Modified_Table 2: "Absolute maximum ratings"_,_Table 3: "Thermal_<br>_data"_,_Table 4: "Static characteristics"_,_Table 5: "Dynamic_<br>_characteristics"_,_Table 6: "IGBT switching characteristics (inductive_<br>_load)"_and_Table 7: "IGBT switching characteristics (snubbed inductive_<br>_load)"_.<br>Added_Section 2.1: "Electrical characteristics (curves)"_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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