# IGBT, 80 A, 1.5 V, 238 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3011596/)

**URL**: https://novapart.co/products/STGWA40IH65DF/igbt-80-a-15-v-238-w-650-to-247-3-pins
**SKU**: STGWA40IH65DF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3900
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | IH |
| Power Dissipation | 238W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3011596/)

**STGWA40IH65DF** 

Datasheet 

Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT ‑ in a TO 247 long leads package 

## **Features** 

- Designed for soft commutation only 

- Maximum junction temperature: TJ = 175 °C 

- VCE(sat) = 1.5 V (typ.) @ IC = 40 A 

- Minimized tail current 

- Tight parameter distribution 

- Low thermal resistance 

- Low drop voltage freewheeling co-packaged diode 

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**----- Start of picture text -----**<br>
C(2, TAB)<br>G(1)<br>E(3) NG1E3C2T<br>**----- End of picture text -----**<br>


- Positive VCE(sat) temperature coefficient 

## **Applications** 

- Induction heating 

- Resonant converters 

- Microwave ovens 

## **Description** 

|**Product status link**|
|---|
|STGWA40IH65DF|
||
|**Product summary**|
|**Order code**<br>STGWA40IH65DF|
|**Marking**<br>G40IH65DF|
|**Package**<br>TO-247 long leads|
|**Packing**<br>Tube|



The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications. 

**DS11801** - **Rev 3** - **September 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STGWA40IH65DF Electrical ratings** 

**1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|80|A|
||Continuous collector current at TC= 100 °C|40||
|ICP(1)|Pulsed collector current|120|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|40|A|
||Continuous forward current at TC= 100 °C|20||
|IFP(1)|Pulsed forward current|120||
|PTOT|Total power dissipation at TC= 25 °C|238|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||



_1. Pulse width limited by maximum junction temperature._ 

**Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.63|°C/W|
||Thermal resistance junction-case diode|2.08||
|RthJA|Thermal resistance junction-ambient|50||



**DS11801** - **Rev 3** 

**page 2/15** 

**STGWA40IH65DF Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 3. Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 250 μA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 40 A||1.50|2.00|V|
|||VGE= 15 V, IC= 40 A,<br>TJ= 125 °C||1.75|||
|||VGE= 15 V, IC= 40 A,<br>TJ= 175 °C||1.90|||
|VF|Forward on-voltage|IF= 20 A||1.85|2.65|V|
|||IF= 20 A, TJ= 125 °C||1.60|||
|||IF= 20 A, TJ= 175 °C||1.55|||
|||IF= 40 A||2.30|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 4. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz, VGE= 0 V|-|2210|-|pF|
|Coes|Output capacitance||-|105|-||
|Cres|Reverse transfer capacitance||-|63|-||
|Qg|Total gate charge|VCC= 520 V, IC= 40 A,<br>VGE= 0 to 15 V<br>(seeFigure 23. Gate charge test<br>circuit)|-|114|-|nC|
|Qge|Gate-emitter charge||-|21|-||
|Qgc|Gate-collector charge||-|49|-||



**DS11801** - **Rev 3** 

**page 3/15** 

**STGWA40IH65DF Electrical characteristics** 

**Table 5. IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)|Turn-off delay time|VCC= 400 V, IC= 40 A,<br>VGE= 15 V, RG= 22 Ω<br>(seeFigure 21. Test circuit for<br>inductive load switching)|-|210|-|ns|
|tf|Current fall time||-|12.5|-||
|td(off)|Turn-off delay time|VCC= 400 V, IC= 40 A,<br>VGE= 15 V, RG= 22 Ω,<br>TJ= 175 °C<br>(seeFigure 21. Test circuit for<br>inductive load switching)|-|216|-|ns|
|tf|Current fall time||-|47|-|ns|



**Table 6. IGBT switching characteristics (capacitive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eoff(1)|Turn-off switching energy|VCC= 320 V, RG= 10 Ω,<br>IC= 40 A, L = 100 μH,<br>Csnub= 22 nF<br>(seeFigure 22. Test circuit for<br>snubbed inductive load switching)|-|190|-|μJ|
|||VCC= 320 V, RG= 10 Ω,<br>IC= 40 A, L = 100 μH,<br>Csnub= 22 nF, TJ= 175 °C<br>(seeFigure 22. Test circuit for<br>snubbed inductive load switching)|-|385|-||



_1. Including the tail of the collector current._ 

**DS11801** - **Rev 3** 

**page 4/15** 

**STGWA40IH65DF Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

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Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature<br>PTOT IGBT100820181013PDT IC IGBT100820181014CCT<br>(W)  (A)<br>VGE = 15 V, TJ = 175 °C<br>VGE = 15 V, TJ = 175 °C 80<br>240<br>60<br>160<br>40<br>80<br>20<br>0 0<br>-50 0 50 100 150 TC (°C) -50 0 50 100 150 TC (°C)<br>**----- End of picture text -----**<br>


**Figure 3. Output characteristics (TJ = 25 °C)** 

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IC IGBT080820181006OC25<br>(A)  VGE = 15 V<br>11 V<br>100<br>13 V<br>80<br>9 V<br>60<br>40<br>20<br>7 V<br>0<br>0 1 2 3 4 5 VCE (V)<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics (TJ = 175 °C)** 

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IC IGBT080820181006OC175<br>(A)  VGE = 15 V<br>11 V<br>100<br>13 V<br>80<br>9 V<br>60<br>40<br>20<br>7 V<br>0<br>0 1 2 3 4 5 VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 6. VCE(sat) vs collector current<br>Figure 5. VCE(sat) vs junction temperature<br>VCE(sat) IGBT100820181015VCET<br>(V)  VGE = 15 V VCE(sat)(V)  IGBT080820181006VCEC<br>VGE = 15 V TJ = 175 °C<br>3.0<br>2.5<br>IC = 80 A<br>2.5<br>TJ = 25 °C<br>2<br>IC = 40 A 2.0<br>1.5 IC = 20 A 1.5 TJ = -40 °C<br>1.0<br>1<br>-50 0 50 100 150 TJ (°C) 0.5<br>0 20 40 60 80 100 IC (A)<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 5/15** 

**STGWA40IH65DF Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 7. Forward bias safe operating area Figure 8. Transfer characteristics<br>IC IGBT080820181007FSOA IC IGBT100820181015TCH<br>(A)  Single pulse, TC = 25 °C, (A)  V CE  = 6 V<br>TJ ≤ 175 °C, VGE = 15 V  100<br>10  [2 ] 80<br>tp = 1 µs<br>60<br>tp = 10 µs TJ = 175  ° C<br>10  [1 ] 40<br>tp = 100 µs<br>tp = 1 ms 20 TJ = 25  ° C<br>10  [0 ] 0<br>10  [0 ] 10  [1 ] 10  [2 ] VCE (V) 5 6 7 8 9 10 VGE (V)<br>**----- End of picture text -----**<br>


**Figure 9. Diode VF vs forward current Figure 10. Normalized VGE(th) vs junction temperature** 

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VF IGBT080820181007DVF VGE(th) IGBT100820181016NVGE<br>(V)  (Norm.)<br>3.0 T J = 25 °C VCE = VGEE<br>1.1<br>IC = 1 mA<br>2.5 TJ = -40 °C<br>1<br>2.0<br>TJ = 175 °C 0.9<br>1.5<br>0.8<br>1.0<br>0.7<br>0.5<br>0 0.6<br>0 20 40 60 IF (A) -50 0 50 100 150 TJ (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 11. Normalized V(BR)CES vs junction temperature Figure 12. Capacitance variations<br>V(BR)CES IGBT100820181016NVBR C  IGBT080820181008CVR<br>(Norm.)  (pF)<br>1.08 IC = 250 μA CIES<br>10  [3 ]<br>1.04<br>1.00<br>10  [2 ]<br>0.96<br>COES<br>CRES<br>0.92 10  [1 ]<br>-50 0 50 100 150 TJ (°C) 10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] VCE (V)<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 6/15** 

**STGWA40IH65DF Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current<br>VGE GADG080820181009QVG E  IGBT080820181009SLC<br>(V)  (μJ)<br>15 VCC = 400 V, IC = 40 A, IG = 1 mA 2400 VV CCGE  = 400 V, R = 15 V, T J  = 175 °C G  = 22 Ω,<br>2000<br>12<br>1600<br>Eoff<br>9<br>1200<br>6<br>800<br>3<br>400<br>0 0<br>0 20 40 60 80 100 Qg (nC) 0 20 40 60 80 IC (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage<br>E  IGBT080820181009SLT E  IGBT080820181009SLV<br>(μJ)  VCC = 400 V, RG = 22 Ω,  (μJ)  IC = 40 A, RG = 22 Ω,<br>VGE = 15 V, IC = 40 A VGE = 15 V, TJ = 175 °C<br>1200<br>900<br>1000<br>800 Eoff<br>Eoff<br>800<br>700<br>600<br>600 400<br>0 50 100 150 TJ (°C) 150 250 350 450 VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 17. Switching times vs collector current Figure 18. Switching energy vs snubber capacitance<br>t  IGBT080820181010STC E  IGBT080820181011SSC<br>(ns)  VCC = 400 V, RG = 22 Ω,  (μJ)  VCC = 320 V, RG = 10 Ω,<br>VGE = 15 V, TJ = 175  ° C 500 VGE = 15 V, IC = 40 A, Lsnub = 0.1 mH<br>td(off)<br>400<br>10  [2 ] 300<br>TJ = 175 °C<br>tf<br>200<br>100<br>TJ = 25 °C<br>10  [1 ] 0<br>0 20 40 60 80 IC (A) 0 30 60 90 Csnub (nF)<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 7/15** 

**STGWA40IH65DF Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 19. Thermal impedance for IGBT Figure 20. Thermal impedance for diode<br>ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>10-1<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>10-2<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 8/15** 

**STGWA40IH65DF Test circuits** 

## **3 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 21. Test circuit for inductive load switching<br>Figure 22. Test circuit for snubbed inductive load<br>A A switching<br>C<br>G L=100µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 23. Gate charge test circuit<br>VCC Figure 24. Switching waveform<br>RL 90%<br>VG 10%<br>Vi ≤ VGMAX IG = CONST 100 Ω  90%<br>D.U.T.<br>VCE 10%<br>2200  2.7 kΩ TcrossTr(Voff)<br>μF 90%<br>47 kΩ IC Td(on)Ton Tr(Ion) Td(off)Toff Tf 10%<br>1 kΩ AM01506v1<br>PW<br>GADG160420181048IG<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 9/15** 

**STGWA40IH65DF Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS11801** - **Rev 3** 

**page 10/15** 

**STGWA40IH65DF TO-247 long leads package information** 

## **4.1 TO-247 long leads package information** 

**Figure 25. TO-247 long leads package outline** 

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8463846_2_F<br>**----- End of picture text -----**<br>


**DS11801** - **Rev 3** 

**page 11/15** 

**STGWA40IH65DF TO-247 long leads package information** 

**Table 7. TO-247 long leads package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



**DS11801** - **Rev 3** 

**page 12/15** 

**STGWA40IH65DF** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|02-Sep-2016|1|First release.|
|10-Aug-2018|2|Updated features on cover page.<br>Updated_Section 1 Electrical ratings_and_Section 2 Electrical characteristics_.<br>Added_Section 2.1 Electrical characteristics (curves)_.<br>Minor text changes.|
|24-Sep-2018|3|Updated schematic on cover page.<br>UpdatedSection 2.1 Electrical characteristics (curves).<br>Minor text changes|



**DS11801** - **Rev 3** 

**page 13/15** 

**STGWA40IH65DF Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**|
||**4.1**<br>TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13**||



**DS11801** - **Rev 3** 

**page 14/15** 

**STGWA40IH65DF** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS11801** - **Rev 3** 

**page 15/15** 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwa40ih65df/igbt-650v-80a-238w-to-247/dp/3011596)
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