# IGBT, 60 A, 1.75 V, 260 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2729671/)

**URL**: https://novapart.co/products/STGWA30H65FB/igbt-60-a-175-v-260-w-650-to-247-3-pins
**SKU**: STGWA30H65FB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4500
**Stock**: 10+
**Lead Time**: 274 days (indicative)

## Description

DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 260W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2729671/)

## **STGWA30H65FB** 

Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package 

Datasheet - production data 

## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- High-speed switching series 

- Minimized tail current 

- VCE(sat) = 1.55 V(typ) @ IC  = 30 A 

- Safe paralleling 

- Tight parameter distribution 

- Low thermal resistance 

## **Applications** 

- Photovoltaic inverters 

- High-frequency converters 

**Figure 1: Internal schematic diagram** 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGWA30H65FB|GWA30H65FB|TO-247 longleads|Tube|



This is information on a product in full production. 

_www.st.com_ 

May 2017 

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|**Contents**<br>**STGWA30H65FB**|**Contents**<br>**STGWA30H65FB**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 10**|
|**4**|**Package information ..................................................................... 11**|
||4.1<br>TO-247 long leads package information ......................................... 11|
|**5**|**Revision history ............................................................................ 13**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|60|A|
||Continuous collector current at TC= 100 °C|30||
|ICP_(1)_|Pulsed collector current|120|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Total dissipation at TC= 25 °C|260|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175||
|**Notes:**<br>(1)Pulse width limited by maximum junction temperature||||



**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case|0.58|°C/W|
|RthJA|Thermal resistancejunction-ambient|50||



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 4: Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 2 mA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 30 A||1.55|2|V|
|||VGE= 15 V, IC= 30 A,<br>TJ= 125 °C||1.65|||
|||VGE= 15 V, IC= 30 A,<br>TJ= 175 °C||1.75|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 5: Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V|-|3659|-|pF|
|Coes|Output capacitance||-|101|-||
|Cres|Reverse transfer capacitance||-|76|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 30 A,<br>VGE= 0 to 15 V<br>(see_Figure 23: "Gate_<br>_charge test circuit"_)|-|149|-|nC|
|Qge|Gate-emitter charge||-|25|-||
|Qgc|Gate-collector charge||-|62|-||



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**Electrical characteristics** 

**Table 6: Switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 30 A,<br>VGE= 15 V, RG= 10 Ω<br>(see_Figure 22: "Test circuit for_<br>_inductive load switching"_)|-|37|-|ns|
|tr|Current rise time||-|14.6|-|ns|
|(di/dt)on|Turn-on current slope||-|1643|-|A/µs|
|td(off)|Turn-off-delaytime||-|146|-|ns|
|tf|Current fall time||-|23|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|151|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy||-|293|-|mJ|
|Ets|Total switchingenergy||-|444|-|mJ|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 30 A,<br>VGE= 15 V, RG= 10 Ω,<br>TJ= 175 °C<br>(see_Figure 22: "Test circuit for_<br>_inductive load switching"_)|-|35|-|ns|
|tr|Current rise time||-|16.1|-|ns|
|(di/dt)on|Turn-on current slope||-|1496|-|A/µs|
|td(off)|Turn-off-delaytime||-|158|-|ns|
|tf|Current fall time||-|65|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|175|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy||-|572|-|mJ|
|Ets|Total switchingenergy||-|747|-|mJ|



## **Notes:** 

(1)Including the reverse recovery of the diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W. 

(2)Including the tail of the collector current. 

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**Electrical characteristics** 

**2.1 Electrical characteristics (curves)** 

**Figure 2: Output characteristics (TJ = 25 °C)** 

**==> picture [165 x 162] intentionally omitted <==**

**Figure 3: Output characteristics (TJ = 175 °C)** 

**==> picture [164 x 162] intentionally omitted <==**

**Figure 4: Transfer characteristics** 

**==> picture [164 x 163] intentionally omitted <==**

**Figure 5: Collector current vs. case temperature** 

**==> picture [163 x 165] intentionally omitted <==**

**Figure 6: VCE(sat) vs. junction temperature** 

**==> picture [173 x 163] intentionally omitted <==**

**Figure 7: Power dissipation vs. case temperature** 

**==> picture [177 x 165] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 8: Forward bias safe operating area** 

**==> picture [169 x 164] intentionally omitted <==**

**Figure 9: Collector current vs. switching frequency** 

**==> picture [173 x 162] intentionally omitted <==**

**Figure 10: Normalized VGE(th) vs. junction temperature** 

**==> picture [182 x 164] intentionally omitted <==**

**Figure 11: Normalized V(BR)CES vs. junction temperature** 

**==> picture [190 x 166] intentionally omitted <==**

**==> picture [437 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12: Switching energy vs. temperature  Figure 13: Switching energy vs. gate resistance<br>GIPG280120141531FSR GIPG280120141535FSR<br>E (µJ) E (µJ)<br>VCC= 400V, VGE= 15V VCC= 400V, VGE= 15V<br>Rg= 10Ω, IC= 30A 1020 IC= 30A, TJ= 175 °C<br>EOFF EOFF<br>600<br>820<br>EON<br>400 620<br>420<br>EON<br>200<br>220<br>0<br>20 40 60 80 100 120 140 160 TJ(°C) 203 10 17 24 31 38 45 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 12: Switching energy vs. temperature** 

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**Electrical characteristics** 

**==> picture [436 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Switching energy vs. collector current  Figure 15: Switching energy vs. collector emitter<br>voltage<br>GIPG280120141605FSR GIPG280120141609FSR<br>E (µJ) E (µJ)<br>VCC= 400V, VGE= 15V TJ= 175°C, VGE= 15V<br>1200 Rg= 10Ω, TJ= 175°C Rg= 10Ω, IC= 30A<br>800<br>1000 EOFF EOFF<br>600<br>800<br>600<br>400<br>EON<br>400 EON<br>200<br>200<br>0 0<br>0 20 40 60 IC(A) 150 250 350 450 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 14: Switching energy vs. collector current** 

**Figure 16: Switching times vs. collector current** 

**==> picture [186 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG100720141533FSR<br>t<br>(ns)<br>TJ= 175°C, VGE= 15V,<br>RG= 10Ω, VCC= 400V<br>tdoff<br>100<br>tf<br>tdon<br>10<br>tr<br>1<br>0 10 20 30 40 50 IC(A)<br>**----- End of picture text -----**<br>


**Figure 17: Switching times vs. gate resistance** 

**==> picture [185 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPG100720141549FSR<br>t<br>(ns)<br>TJ= 175°C, VGE= 15V, tdoff<br>IC= 30A, VCC= 400V<br>tdon<br>100<br>tf<br>tr<br>10<br>0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 18: Capacitance variations** 

**==> picture [178 x 166] intentionally omitted <==**

**Figure 19: VCE(sat) vs. collector current** 

**==> picture [177 x 163] intentionally omitted <==**

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**Electrical characteristics** 

**Figure 20: Gate charge vs. gate-emitter voltage** 

**==> picture [203 x 174] intentionally omitted <==**

**Figure 21: Thermal impedance** 

**==> picture [178 x 179] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**==> picture [398 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22: Test circuit for inductive load  Figure 23: Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


**Figure 24: Switching waveform** 

**==> picture [147 x 72] intentionally omitted <==**

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 TO-247 long leads package information** 

**Figure 25: TO-247 long leads package outline** 

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**Package information** 

**Table 7: TO-247 long leads package mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



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**Revision history** 

## **5 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-May-2017|1|Initial release|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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