# IGBT, 40 A, 1.55 V, 159 W, 650 V, TO-247LL, 3 Pins

![Product image](https://novapart.co/image/farnell:3581060/)

**URL**: https://novapart.co/products/STGWA20IH65DF/igbt-40-a-155-v-159-w-650-to-247ll-3-pins
**SKU**: STGWA20IH65DF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.5900
**Stock**: 50+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | IH |
| Power Dissipation | 159W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247LL |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3581060/)

**STGWA20IH65DF** 

Datasheet 

Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT ‑ in a TO 247 long leads package 

## **Features** 

- Designed for soft-commutation 

- Maximum junction temperature: TJ = 175 °C 

- VCE(sat) = 1.55 V (typ.) @ IC = 20 A 

- Minimized tail current 

- Tight parameter distribution 

- Low thermal resistance 

- Low drop voltage freewheeling co-packaged diode 

**==> picture [119 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
C(2, TAB)<br>G(1)<br>E(3) NG1E3C2T<br>**----- End of picture text -----**<br>


- Positive VCE(sat) temperature coefficient 

## **Applications** 

- Induction heating 

- Resonant converters 

- Microwave ovens 

## **Description** 

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications. 

## **Product status link** 

STGWA20IH65DF 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STGWA20IH65DF|
|**Marking**|G20IH65DF|
|**Package**|TO-247 long leads|
|**Packing**|Tube|



**DS13310** - **Rev 1** - **April 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STGWA20IH65DF Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|40|A|
||Continuous collector current at TC= 100 °C|20||
|ICP(1)|Pulsed collector current|60||
|VGE|Gate-emitter voltage|±20|V|
||Transient gate-emitter voltage (tp≤ 10 μs)|±30||
|IF|Continuous forward current at TC= 25 °C|20|A|
||Continuous forward current at TC= 100 °C|10||
|IFP(1)|Pulsed forward current|60||
|PTOT|Total power dissipation at TC= 25 °C|159|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||



_1. Pulse width limited by maximum junction temperature._ 

## **Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.94|°C/W|
||Thermal resistance junction-case diode|2.08||
|RthJA|Thermal resistance junction-ambient|50||



**DS13310** - **Rev 1** 

**page 2/14** 

**STGWA20IH65DF Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 3. Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 250 μA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 20 A||1.55|2.05|V|
|||VGE= 15 V, IC= 20 A,<br>TJ= 125 °C||1.80|||
|||VGE= 15 V, IC= 20 A,<br>TJ= 175 °C||1.95|||
|VF|Forward on-voltage|IF= 10 A||1.50|2.15|V|
|||IF= 10 A, TJ= 125 °C||1.35|||
|||IF= 10 A, TJ= 175 °C||1.25|||
|||IF= 20 A||1.85|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 4. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz, VGE= 0 V|-|1000|-|pF|
|Coes|Output capacitance||-|62|-||
|Cres|Reverse transfer capacitance||-|25|-||
|Qg|Total gate charge|VCC= 520 V, IC= 20 A,<br>VGE= 0 to 15 V<br>(seeFigure 23. Gate charge test<br>circuit)|-|56|-|nC|
|Qge|Gate-emitter charge||-|9.6|-||
|Qgc|Gate-collector charge||-|26.5|-||



**DS13310** - **Rev 1** 

**page 3/14** 

**STGWA20IH65DF Electrical characteristics** 

**Table 5. IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(off)|Turn-off delay time|VCC= 400 V, IC= 20 A,<br>VGE= 15 V, RG= 22 Ω<br>(seeFigure 21. Test circuit for<br>inductive load switching)|-|121|-|ns|
|tf|Current fall time||-|38|-||
|td(off)|Turn-off delay time|VCC= 400 V, IC= 20 A,<br>VGE= 15 V, RG= 22 Ω,<br>TJ= 175 °C<br>(seeFigure 21. Test circuit for<br>inductive load switching)|-|140|-||
|tf|Current fall time||-|90|-||



**Table 6. IGBT switching characteristics (capacitive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eoff(1)|Turn-off switching energy|VCC= 320 V, RG= 10 Ω,<br>IC= 20 A, L = 100 μH,<br>Csnub= 22 nF<br>(seeFigure 22. Test circuit for<br>snubbed inductive load switching)|-|110|-|μJ|
|||VCC= 320 V, RG= 10 Ω,<br>IC= 20 A, L = 100 μH,<br>Csnub= 22 nF, TJ= 175 °C<br>(seeFigure 22. Test circuit for<br>snubbed inductive load switching)|-|230|-||



_1. Including the tail of the collector current._ 

**DS13310** - **Rev 1** 

**page 4/14** 

**STGWA20IH65DF Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature** 

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PTOT GADG100420200844PDT IC GADG100420200844CCT<br>(W)  (A)<br>VGE ≥ 15 V, TJ ≤ 175 °C  VGE ≥ 15 V, TJ ≤ 175 °C<br>160 40<br>120 30<br>80 20<br>40 10<br>0 0<br>25 75 125 175 TC (°C) 25 75 125 175 TC (°C)<br>**----- End of picture text -----**<br>


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Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)<br>IC GADG100420200845OC25 IC GADG100420200845OC175<br>(A)  VGE = 15 V (A)  VGE = 15 V<br>11 V<br>50 50<br>11 V<br>13 V 13 V<br>40 40<br>9 V 9 V<br>30 30<br>20 20<br>10 10<br>7 V<br>7 V<br>0 0<br>0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current<br>VCE(sat) GADG100420200846VCET VCE(sat) GADG100420200846VCEC<br>(V)  (V)<br>VGE = 15 V VGE = 15 V<br>2.8 2.8<br>TJ = 175 °C<br>2.4 2.4<br>IC = 40 V TJ = 25 °C<br>2.0 2.0<br>IC = 20 V<br>1.6 1.6<br>TJ = -40 °C<br>IC = 10 V<br>1.2 1.2<br>0.8 0.8<br>-50 0 50 100 150 TJ (°C) 0 10 20 30 40 50 IC (A)<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 5/14** 

**STGWA20IH65DF Electrical characteristics (curves)** 

**Figure 7. Forward bias safe operating area** 

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**----- Start of picture text -----**<br>
IC IGBT100420200847FSOA<br>(A)<br>tp = 1 µs<br>10  [1 ] tp = 10 µs<br>tp = 100 µs<br>tp = 1 ms<br>10  [0 ]<br>Single pulse, TC = 25 °C,<br>T J  ≤ 175 °C, V GE  = 15 V<br>10  [-1 ]<br>10  [0 ] 10  [1 ] 10  [2 ] VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 8. Transfer characteristics<br>IC GADG170420201008TCH<br>(A)<br>VCE = 6 V<br>50<br>40<br>30<br>TJ = 175 °C<br>20<br>TJ = 25 °C<br>10<br>0<br>5 6 7 8 9 10 VGE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Diode VF vs forward current Figure 10. Normalized VGE(th) vs junction temperature<br>VF GADG100420200852DVF VGE(th) IGBT100820181016NVGE<br>(V)  (Norm.)<br>3.0 VCE = VGEE<br>1.1<br>IC = 1 mA<br>TJ = 25 °C<br>2.5<br>1.0<br>2.0 TJ = -40 °C<br>0.9<br>1.5<br>TJ = 175 °C<br>0.8<br>1.0<br>0.5 0.7<br>0.0 0.6<br>0 10 20 30 IF (A) -50 0 50 100 150 TJ (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 11. Normalized V(BR)CES vs junction temperature Figure 12. Capacitance variations<br>V(BR)CES IGBT100820181016NVBR C  GADG100420200853CVR<br>(Norm.)  (pF)<br>1.08<br>IC = 250 μA 10  [3 ] Cies<br>1.04<br>10  [2 ]<br>1.00<br>Coes<br>10  [1 ]<br>0.96 f = 1 MHz Cres<br>0.92 10  [0 ]<br>-50 0 50 100 150 TJ (°C) 10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] VCE (V)<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 6/14** 

**STGWA20IH65DF Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current<br>VGE GADG170420201009GCGE Eoff GADG100420200853SLC<br>(V)  VCC = 520 V, IC = 20 A, (mJ) VCC = 400 V, RG = 22 Ω,<br>IG = 1.3 mA VGE = 15 V, TJ=175  ℃<br>15<br>0.8<br>12<br>0.6<br>9<br>Eoff<br>0.4<br>6<br>0.2<br>3<br>0 0.0<br>0 15 30 45 60 Qg (nC) 0 10 20 30 40 IC (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage<br>Eoff GADG100420200854SLT Eoff GADG100420200856SLV<br>(mJ) VCC = 400 V, IC = 20 A,  (mJ) IC = 20 A, Rg = 22 Ω,<br>Rg = 22 Ω, VGE = 15 V VGE = 15 V, TJ=175 °C<br>0.5 0.6<br>0.4 0.5<br>Eoff<br>Eoff<br>0.3 0.4<br>0.2 0.3<br>0.1 0.2<br>0 50 100 150 TJ (°C) 150 250 350 450 VCE (V)<br>**----- End of picture text -----**<br>


**Figure 17. Switching times vs collector current** 

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t GADG100420200857STC<br>(ns) VCC = 400 V, RG = 22 Ω,<br>VGE = 15 V, TJ=175  ℃<br>td(off)<br>10 [3]<br>10 [2]<br>tf<br>10 [1]<br>0 10 20 30 40 IC (A)<br>**----- End of picture text -----**<br>


**Figure 18. Switching energy vs snubber capacitance** 

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**----- Start of picture text -----**<br>
Eoff GADG170420201024SSC<br>(mJ) VCC = 320 V, IC = 20 A,<br>Rg = 10 Ω, VGE = 15 V<br>0.3<br>0.2<br>TJ = 175 °C<br>0.1<br>TJ = 25 °C<br>0.0<br>0 20 40 60 80 100 Csnub (nF)<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 7/14** 

**STGWA20IH65DF Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 19. Thermal impedance for IGBT Figure 20. Thermal impedance for diode<br>ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>10-1<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>10-2<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 8/14** 

**STGWA20IH65DF Test circuits** 

## **3 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 22. Test circuit for snubbed inductive load<br>Figure 21. Test circuit for inductive load switching<br>switching<br>A A<br>C<br>G L=100µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1 AM17096v1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 23. Gate charge test circuit Figure 24. Switching waveform<br>VCC<br>RL<br>90%<br>Vi ≤ VGMAX IG = CONST 100 Ω  VG 10%<br>D.U.T. 90%<br>2200  2.7 kΩ VCE tr(Voff) 10%<br>μF tcross<br>90%<br>1 kΩ 47 kΩ IC td(on)ton tr(Ion) td(off)toff tf 10%<br>PW<br>AM01506v1<br>GADG160420181048IG<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 9/14** 

**STGWA20IH65DF Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**4.1 TO-247 long leads package information** 

**Figure 25. TO-247 long leads package outline** 

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8463846_2_F<br>**----- End of picture text -----**<br>


**DS13310** - **Rev 1** 

**page 10/14** 

**STGWA20IH65DF TO-247 long leads package information** 

**Table 7. TO-247 long leads package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



**DS13310** - **Rev 1** 

**page 11/14** 

**STGWA20IH65DF** 

## **Revision history** 

**Table 8. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Apr-2020|1|First release.|



**DS13310** - **Rev 1** 

**page 12/14** 

**STGWA20IH65DF Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**|
||**4.1**<br>TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12**||



**DS13310** - **Rev 1** 

**page 13/14** 

**STGWA20IH65DF** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS13310** - **Rev 1** 

**page 14/14** 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwa20ih65df/igbt-650v-40a-to-247ll/dp/3581060)
---

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