# IGBT, 30 A, 2.1 V, 259 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3366992/)

**URL**: https://novapart.co/products/STGWA15H120DF2/igbt-30-a-21-v-259-w-12-kv-to-247-3-pins
**SKU**: STGWA15H120DF2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6800
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | 1200V H |
| Power Dissipation | 259W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3366992/)

## **STGW15H120DF2, STGWA15H120DF2** Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 

**Datasheet** - **production data** 

## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- VCE(sat) = 2.1 V (typ.) @ IC = 15 A 

- 5 µs minimum short circuit withstand time at TJ=150 °C 

- Safe paralleling 

- Very fast recovery antiparallel diode 

- Low thermal resistance 

## **Figure 1. Internal schematic diagram** 

## **Applications** 

- Uninterruptible power supply 

- Welding machines 

- Photovoltaic inverters 

- Power factor correction 

- High frequency converters 

## **Description** 

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW15H120DF2|G15H120DF2|TO-247|Tube|
|STGWA15H120DF2|G15H120DF2|TO-247 long leads|Tube|



March 2015 

This is information on a product in full production. 

_www.st.com_ 

DocID023751 Rev 5 

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**Contents** 

**STGW15H120DF2, STGWA15H120DF2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
||4.1<br>TO-247, STGW15H120DF2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.2<br>TO-247 long leads, STGWA15H120DF2 . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current at TC= 25 °C|30|A|
||Continuous collector current at TC= 100 °C|15|A|
|ICP<br>(1)|Pulsed collector current|60|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous collector current at TC= 25 °C|30|A|
||Continuous collector current at TC= 100 °C|15|A|
|IFP<br>(1)|Pulsed forward current|60|A|
|PTOT|Total dissipation at TC= 25 °C|259|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature|-55 to 175|°C|



1. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.58|°C/W|
|RthJC|Thermal resistance junction-case diode|1.47|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

**Table 4. Static characteristics** 

||**Table**|**4. Static characteristics**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)CES|Collector-emitter<br>breakdown voltage<br>(VGE= 0)|IC= 2 mA|1200|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 15 A||2.1|2.6|V|
|||VGE= 15 V, IC= 15 A<br>TJ= 125 °C||2.4|||
|||VGE= 15 V, IC= 15 A<br>TJ= 175 °C||2.5|||
|VF|Forward on-voltage|IF= 15 A||3.5|4.4|V|
|||IF= 15 A, TJ= 125 °C||2.6|||
|||IF= 15 A, TJ= 175 °C||2.2|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 500 µA|5|6|7|V|
|ICES|Collector cut-off current<br>(VGE= 0)|VCE= 1200 V|||25|µA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE= ± 20 V|||250|nA|



**Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|1300|-|pF|
|Coes|Output capacitance||-|105|-|pF|
|Cres|Reverse transfer<br>capacitance||-|32|-|pF|
|Qg|Total gate charge|VCC= 960 V, IC= 15 A,<br>VGE= 15 V, see_Figure 29_|-|67|-|nC|
|Qge|Gate-emitter charge||-|8|-|nC|
|Qgc|Gate-collector charge||-|38|-|nC|



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**STGW15H120DF2, STGWA15H120DF2** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VCE= 600 V, IC= 15 A,<br>RG= 10Ω, VGE= 15 V,<br>see_Figure 28_|-|23|-|ns|
|tr|Current rise time||-|7.4|-|ns|
|(di/dt)on|Turn-on current slope||-|1621|-|A/µs|
|td(off)|Turn-off delay time|||111|-|ns|
|tf|Current fall time||-|111|-|ns|
|Eon<br>(1)|Turn-on switching losses||-|0.38|-|mJ|
|Eoff<br>(2)|Turn-off switching losses||-|0.37|-|mJ|
|Ets|Total switching losses||-|0.75|-|mJ|
|td(on)|Turn-on delay time|VCE= 600 V, IC= 15 A,<br>RG= 10Ω, VGE= 15 V,<br>TJ= 175 °C, see_Figure 28_|-|23.5|-|ns|
|tr|Current rise time||-|8|-|ns|
|(di/dt)on|Turn-on current slope||-|1525|-|A/µs|
|td(off)|Turn-off delay time||-|118|-|ns|
|tf|Current fall time||-|253|-|ns|
|Eon<br>(1)|Turn-on switching losses||-|0.65|-|mJ|
|Eoff<br>(2)|Turn-off switching losses||-|0.93|-|mJ|
|Ets|Total switching losses||-|1.58|-|mJ|
|tsc|Short-circuit withstand time|VCE= 600 V, VGE= 15 V,<br>TJ= 150 °C,|5||-|µs|



1. Energy losses include reverse recovery of the external diode. 

2. Turn-off losses include also the tail of the collector current. 

**Table 7. Diode switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recovery time|IF= 15 A, VR= 600 V,<br>di/dt=1000 A/µs,<br>VGE= 15 V,<br>see_Figure 28_|-|231|-|ns|
|Qrr|Reverse recovery charge||-|0.72|-|µC|
|Irrm|Reverse recovery current||-|14.5|-|A|
|dIrr//dt|Peak rate of fall of reverse<br>recovery current during tb||-|1200|-|A/µs|
|Err|Reverse recovery energy||-|0.4|-|mJ|
|trr|Reverse recovery time|IF= 15 A, VR= 600 V,<br>di/dt=1000 A/µs,<br>VGE= 15 V, TJ= 175 °C,<br>see_Figure 28_|-|414|-|ns|
|Qrr|Reverse recovery charge||-|2.2|-|µC|
|Irrm|Reverse recovery current||-|21.5|-|A|
|dIrr//dt|Peak rate of fall of reverse<br>recovery current during tb||-|632|-|A/µs|
|Err|Reverse recovery energy||-|1.3|-|mJ|



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**STGW15H120DF2, STGWA15H120DF2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

**Figure 4. Output characteristics (TJ = 25°C)** 

## **Figure 5. Output characteristics (TJ = 175°C)** 

**Figure 6. VCE(sat) vs. junction temperature** 

**Figure 7. VCE(sat) vs. collector current** 

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**STGW15H120DF2, STGWA15H120DF2** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 10. Transfer characteristics** 

**Figure 12. Normalized V(BR)CES vs. junction temperature** 

**Figure 9. Forward bias safe operating area** 

**Figure 11. Normalized VGE(th) vs junction temperature** 

**Figure 13. Capacitance variation** 

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**Electrical characteristics** 

## **Figure 14. Gate charge vs. gate-emitter voltage** 

**Figure 16. Switching loss vs gate resistance** 

**Figure 18. Switching loss vs collector-emitter voltage** 

## **Figure 15. Switching loss vs collector current** 

## **Figure 17. Switching loss vs temperature** 

**Figure 19. Switching times vs. gate resistance** 

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**Electrical characteristics** 

**Figure 20. Switching times vs. collector current** 

**Figure 22. Reverse recovery current vs. diode current slope** 

**Figure 24. Reverse recovery charge vs. diode current slope** 

**Figure 21. Diode VF vs. forward current** 

**Figure 23. Reverse recovery time vs. diode current slope** 

**Figure 25. Reverse recovery energy vs. diode current slope** 

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**Electrical characteristics** 

## **Figure 26. Thermal impedance for IGBT** 

**==> picture [330 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2<br>10<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


## **Figure 27. Thermal impedance for diode** 

**==> picture [270 x 261] intentionally omitted <==**

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**Test circuits** 

## **3 Test circuits** 

**Figure 28. Test circuit for inductive load Figure 29. Gate charge test circuit switching** 

**==> picture [220 x 145] intentionally omitted <==**

## **Figure 30. Switching waveform** 

**==> picture [228 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
k<br>k<br>k<br>k<br>k<br>k<br>AM01505v1<br>**----- End of picture text -----**<br>


**Figure 31. Diode reverse recovery waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% di/dt Qrr<br>VG 10% IF trr<br>90% ts tf<br>VCE Tr(Voff) 10%<br>Tcross t<br>10% IRRM<br>90%<br>IRRM<br>IC Td(on)Ton Tr(Ion) Td(offToff) Tf 10% VRRM<br>dv/dt<br>AM01506v1 AM01507v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 

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**Package mechanical data** 

## **4.1 TO-247, STGW15H120DF2** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 32. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Package mechanical data** 

## **4.2 TO-247 long leads, STGWA15H120DF2** 

**==> picture [178 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 33. TO-247 long leads drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 491] intentionally omitted <==**

**----- Start of picture text -----**<br>
8463846_A_F<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-247 long leads mechanical data** 

||**Table 9. TO-247 long leads mechanical data**|**Table 9. TO-247 long leads mechanical data**|**Table 9. TO-247 long leads mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Oct-2012|1|Initial release.|
|03-Mar-2014|2|Updated title and features in cover page.<br>Updated_Section 4: Package mechanical data_.<br>Minor text changes.|
|08-Apr-2014|3|Added_Section 2.1: Electrical characteristics (curves)_.<br>Minor text changes.|
|29-Jan-2015|4|Added_4.2: TO-247 long leads, STGWA15H120DF2_.<br>Updated_Figure 29.: Gate charge test circuit_.<br>Updated_Figure 30.: Switching waveform_and_Figure 31.: Diode_<br>_reverse recovery waveform_.<br>Minor text changes.|
|04-Mar-2015|5|Updated_Figure 5.: Output characteristics (TJ = 175°C)_<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

18/18 DocID023751 Rev 5 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgwa15h120df2/igbt-1-2kv-30a-175deg-c-259w/dp/3366992)
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