# IGBT, 120 A, 1.6 V, 469 W, 650 V, TO-247, 3 Pins
**URL**: https://novapart.co/products/STGW80H65DFB/igbt-120-a-16-v-469-w-650-to-247-3-pins
**SKU**: STGW80H65DFB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.3900
**Stock**: 1000+
**Lead Time**: 120 days (indicative)
## Description
DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pin
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 469W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2807180/)
## **STGW80H65DFB, STGWT80H65DFB**
## Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Datasheet - production data
## **Features**
- Maximum junction temperature: TJ = 175 °C
**==> picture [175 x 91] intentionally omitted <==**
**----- Start of picture text -----**
TAB
3
\ 2
3
1
2
1
TO-247 TO-3P
**----- End of picture text -----**
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V(typ) @ IC = 80 A
- Safe paralleling
- Tight parameter distribution
- Low thermal resistance
- Very fast soft recovery antiparallel diode
## **Applications**
- Photovoltaic inverters
**Figure 1: Internal schematic diagram**
- High frequency converters
## **Description**
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW80H65DFB|GW80H65DFB|TO-247|Tube|
|STGWT80H65DFB|GWT80H65DFB|TO-3P|Tube|
This is information on a product in full production.
November 2016 DocID024366 Rev 8
1/18
_www.st.com_
|**Contents**
**STGW80H65DFB, STGWT80H65DFB**|**Contents**
**STGW80H65DFB, STGWT80H65DFB**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 12**|
|**4**|**Package information ..................................................................... 13**|
||4.1
TO-247 package information ........................................................... 13|
||4.2
TO-3P package information ............................................................ 15|
|**5**|**Revision history ............................................................................ 17**|
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|120_(1)_|A|
||Continuous collector current at TC= 100 °C|80||
|ICP_(2)(3)_|Pulsed collector current|300|A|
|VGE|Gate-emitter voltage|± 20|V|
|IF|Continuous forward current at TC= 25 °C|120_(1)_|A|
||Continuous forward current at TC= 100 °C|80||
|IFP_(2)(3)_|Pulsed forward current|300|A|
|PTOT|Total dissipation at TC= 25 °C|469|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||
## **Notes:**
- (1)Current level is limited by bond wires
- (2)Pulse width limited by maximum junction temperature. (tp < 1ms , TJ < 175 °C) (3)Defined by design, not tested.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.32|°C/W|
|RthJC|Thermal resistancejunction-case diode|0.66||
|RthJA|Thermal resistancejunction-ambient|50||
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 2 mA|650|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 80 A||1.6|2|V|
|||VGE= 15 V, IC= 80 A,
TJ= 125 °C||1.8|||
|||VGE= 15 V, IC= 80 A,
TJ= 175 °C||1.9|||
|VF|Forward on-voltage|IF= 80 A||1.9|2.3|V|
|||IF= 80 A, TJ= 125 °C||1.6|||
|||IF= 80 A, TJ= 175 °C||1.5|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||100|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ± 20 V|||±250|nA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|10524|-|pF|
|Coes|Output capacitance||-|385|-||
|Cres|Reverse transfer
capacitance||-|215|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 80 A,
VGE= 15 V (see_Figure 29:_
_" Gate charge test circuit"_)|-|414|-|nC|
|Qge|Gate-emitter charge||-|78|-||
|Qgc|Gate-collector charge||-|170|-||
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical characteristics**
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 80 A,
VGE= 15 V, RG= 10 Ω
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|84|-|ns|
|tr|Current rise time||-|52|-|ns|
|(di/dt)on|Turn-on current slope||-|1270|-|A/µs|
|td(off)|Turn-off-delaytime||-|280|-|ns|
|tf|Current fall time||-|31|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|2.1|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy||-|1.5|-|mJ|
|Ets|Total switchingenergy||-|3.6|-|mJ|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 80 A,
VGE= 15 V, RG= 10 Ω ,
TJ= 175 °C
(see_Figure 28: " Test_
_circuit for inductive load_
_switching"_)|-|77|-|ns|
|tr|Current rise time||-|51|-|ns|
|(di/dt)on|Turn-on current slope||-|1270|-|A/µs|
|td(off)|Turn-off-delaytime||-|328|-|ns|
|tf|Current fall time||-|30|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|4.4|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy||-|2.1|-|mJ|
|Ets|Total switchingenergy||-|6.5|-|mJ|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 80 A, VR= 400 V,
di/dt = 1000 A/µs
VGE= 15 V,
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|85|-|ns|
|Qrr|Reverse recoverycharge||-|1105|-|nC|
|Irrm|Reverse recoverycurrent||-|26|-|A|
|dIrr/dt|Peak rate of fall of reverse
recovery current during tb||-|722|-|A/µs|
|Err|Reverse recoveryenergy||-|267|-|µJ|
|trr|Reverse recoverytime|IF= 80 A, VR= 400 V,
VGE= 15 V ,TJ= 175 °C
di/dt = 1000 A/µs
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|149|-|ns|
|Qrr|Reverse recoverycharge||-|4920|-|nC|
|Irrm|Reverse recoverycurrent||-|66|-|A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|546|-|A/µs|
|Err|Reverse recovery energy||-|1172|-|µJ|
DocID024366 Rev 8
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**STGW80H65DFB, STGWT80H65DFB**
## **Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**Figure 2: Output characteristics (TJ= 25 °C)**
**==> picture [177 x 163] intentionally omitted <==**
**Figure 3: Output characteristics (TJ= 175 °C)**
**==> picture [179 x 163] intentionally omitted <==**
**Figure 4: Transfer characteristics**
**==> picture [180 x 162] intentionally omitted <==**
**Figure 5: Collector current vs. case temperature**
**==> picture [195 x 170] intentionally omitted <==**
**----- Start of picture text -----**
IC GIPD160920130941FSR
(A)
VGE = 15 V, TJ = 175 °C
120
100
80
60
40
20
0
0 25 50 75 100 125 150 TC(°C)
**----- End of picture text -----**
**==> picture [462 x 191] intentionally omitted <==**
**----- Start of picture text -----**
Figure 6: Power dissipation vs. case temperature Figure 7: VCE(sat) vs. junction temperature
PTOT GIPD160920130948FSR
(W) VGE = 15 V, TJ = 175 °C
400
300
200
100
0
0 50 100 150 TC(°C)
**----- End of picture text -----**
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical characteristics**
**Figure 8: VCE (sat) vs. collector current**
**Figure 9: Forward bias safe operating area**
**Figure 10: Diode VF vs. forward current**
**Figure 11: Normalized V(BR)CES vs. junction temperature**
**Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Gate charge vs. gate-emitter voltage**
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical characteristics**
**Figure 14: Switching energy vs. temperature**
**Figure 15: Switching energy vs. gate resistance**
**Figure 16: Switching energy vs. collector current**
**Figure 17: Switching energy vs. collector emitter voltage**
**Figure 18: Switching time vs. collector temperature**
**Figure 19: Switching time vs. gate resistance**
**==> picture [421 x 167] intentionally omitted <==**
**----- Start of picture text -----**
GIPD160920131533FSR GIPD160920131539FSR
t t
(ns) (ns) TJ= 175°C, VGE = 15V tdoff
tdoff VCC= 400V, IC= 80A
100 tdon
tdon
tr
100
tr
10 tf tf
TJ= 175°C, VGE = 15V
1 VCC= 400V, Rg= 10Ω 10
20 40 60 80 100 120 140 IC(A) 4 8 12 16 20 Rg(Ω)
**----- End of picture text -----**
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**Electrical characteristics**
**==> picture [199 x 49] intentionally omitted <==**
**----- Start of picture text -----**
Figure 20: Reverse recovery current vs. diode
current slope
Im GIPD160920131550FSR
=80A
A) VF= 400V, IF= 80A
**----- End of picture text -----**
**Figure 22: Reverse recovery charge vs. diode current slope**
**Figure 24: Capacitance variations**
**Figure 21: Reverse recovery time vs. diode current slope**
**Figure 23: Reverse recovery energy vs. diode current slope**
**==> picture [188 x 366] intentionally omitted <==**
**----- Start of picture text -----**
(Ww) r van
1200 / “Se cccceeessey-
/ T= 175°C SR
1000} / Ssy
,
800
Ve= 400V, IF= 80A
600
400
200
T= 25°C
0
) 500 1000 1500 2000 2500 di/dt(A/ys)
Figure 25: Collector current vs. switching
frequency
Ic[A] GIPD260520141426FSR
160
140
Tc=80°C
120 Tc=100 [°] C
100
80
rectangular current shape,
60 (dutycycle=0.5, VCC =400V,R =10G Ω,
VGE =0/15 V,TJ =175°C)
40
1 10 f [kHz]
**----- End of picture text -----**
**Figure 25: Collector current vs. switching frequency**
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**STGW80H65DFB, STGWT80H65DFB**
**Electrical characteristics**
**Figure 26: Thermal impedance for IGBT**
**==> picture [351 x 337] intentionally omitted <==**
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**Electrical characteristics**
**Figure 27: Thermal impedance for diode**
**==> picture [249 x 241] intentionally omitted <==**
DocID024366 Rev 8
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**STGW80H65DFB, STGWT80H65DFB**
**Test circuits**
## **3 Test circuits**
**Figure 28: Test circuit for inductive load switching**
**Figure 29: Gate charge test circuit**
**==> picture [169 x 132] intentionally omitted <==**
**----- Start of picture text -----**
A A
C
G L=100 µH
a
E B
B
C 3.3µF 1000µF VCC
G D.U.T
S$
+ RG E
-
AM01504v1
**----- End of picture text -----**
**Figure 30: Switching waveform**
**Figure 31: Diode reverse recovery waveform**
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**STGW80H65DFB, STGWT80H65DFB**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO-247 package information**
**Figure 32: TO-247 package outline**
DocID024366 Rev 8 13/18 ~~a~~
**Package information STGW80H65DFB, STGWT80H65DFB**
**Table 8: TO-247 package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|
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**Package information**
## **4.2 TO-3P package information**
**Figure 33: TO-3P package outline**
**==> picture [406 x 517] intentionally omitted <==**
**----- Start of picture text -----**
8045950_B
**----- End of picture text -----**
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**Package information STGW80H65DFB, STGWT80H65DFB**
**Table 9: TO-3P package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.60|4.80|5.00|
|A1|1.45|1.50|1.65|
|A2|1.20|1.40|1.60|
|b|0.80|1.00|1.20|
|b1|1.80|2.00|2.20|
|b2|2.80|3.00|3.20|
|c|0.55|0.60|0.75|
|D|19.70|19.90|20.10|
|D1|13.70|13.90|14.10|
|E|15.40|15.60|15.80|
|E1|13.40|13.60|13.80|
|E2|9.40|9.60|9.90|
|e|5.15|5.45|5.75|
|L|19.80|20.00|20.20|
|L1|3.30|3.50|3.70|
|L2|18.20|18.40|18.60|
|ØP|3.30|3.40|3.50|
|ØP1|3.10|3.20|3.30|
|Q|4.80|5.00|5.20|
|Q1|3.60|3.80|4|
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**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Mar-2013|1|First release.|
|18-Sep-2013|2|Document status promoted from preliminary to production data.
Added Section_2.1: Electrical characteristics (curves)_|
|20-Nov-2013|3|Added device in Max247. Modified_Table 1_accordingly.
Updated_Section 4: Package information._Minor text changes in
coverpage.|
|24-Jan-2014|4|Updated title and description in cover page.
Updated_Table 6: IGBT switching characteristics (inductive load),_
_Table 7: Diode switching characteristics (inductive load)_,_Figure 9:_
_Forward bias safe operating area_and_Figure 14: Switching energy_
_vs. temperature._|
|13-Jun-2014|5|Updated_Figure 5: Collector current vs. case temperature, Figure_
_6: Power dissipation vs. case temperature, Figure 18: Switching_
_times vs. collector current, Figure 19: Switching times vs._
_gateresistance_and_Figure 24: Capacitance variations._
Added_Figure 25: Collector current vs. switching frequency_.
Updated_Section 4: Package information_.
Minor text changes.|
|07-May-2015|6|Added TO-247 longleadspackage information.|
|21-Sep-2016|7|Updated_Figure 2: "Output characteristics (TJ= 25 °C) "_,_Figure 3:_
_"Output characteristics (TJ= 175 °C) "_,_Figure 4: "Transfer_
_characteristics "_,_Figure 7: "VCE(sat) vs. junction temperature"_
and_Figure 8: "VCE (sat) vs. collector current"_.
The part number STGY80H65DFB has been moved to a separate
datasheet.
Minor text changes.|
|17-Nov-2016|8|Updated_Table 2: "Absolute maximum ratings"_and_Figure 9:_
_"Forward bias safe operating area"_.
The part number STGWA80H65DFB has been moved to a
separate datasheet. Updated document accordingly.|
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**STGW80H65DFB, STGWT80H65DFB**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2016 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STGW80H65DFB/igbt-120-a-16-v-469-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw80h65dfb/igbt-single-650v-120a-to-247/dp/2807180)
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