# IGBT, 80 A, 1.85 V, 375 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2629741/)

**URL**: https://novapart.co/products/STGW60V60DF/igbt-80-a-185-v-375-w-600-to-247-3-pins
**SKU**: STGW60V60DF
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1100
**Stock**: 1000+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | V |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629741/)

**STGW60V60DF, STGWA60V60DF STGWT60V60DF** Trench gate field-stop IGBT, V series 600 V, 60 A very high speed 

**Datasheet** - **production data** 

## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- Tail-less switching off 

**==> picture [185 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2 2 3<br>1 1<br>TO-247 TO-247 long leads<br>TAB<br>IAN<br>3<br>ANS 2<br>\ 1<br>TO-3P<br>**----- End of picture text -----**<br>


## **Figure 1. Internal schematic diagram** 

**==> picture [141 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (2 or TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


- VCE(sat) = 1.85 V (typ.) @ IC = 60 A 

- Tight parameter distribution 

- Safe paralleling 

- Low thermal resistance 

- Very fast soft recovery antiparallel diode 

## **Applications** 

- Photovoltaic inverters 

- Uninterruptible power supply 

- Welding 

- Power factor correction 

- Very high frequency converters 

## **Description** 

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW60V60DF|GW60V60DF|TO-247|Tube|
|STGWA60V60DF|G60V60DF|TO-247 long leads|Tube|
|STGWT60V60DF|GWT60V60DF|TO-3P|Tube|



September 2016 

DocID024154 Rev 7 

1/20 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
||4.1<br>TO-247 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.2<br>TO-247 long leads package information  . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||4.3<br>TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|



2/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|600<br>~~ee~~|V<br>~~ee~~|
|IC|Continuous collector current at TC= 25 °C|80(1)|A<br>~~—~~|
|IC<br>~~a~~<br>~~ee~~|Continuous collector current at TC= 100 °C<br>~~ee~~|60|A<br>~~ee~~<br>~~—~~|
|ICP<br>(2)<br>~~ee~~|Pulsed collector current<br>~~ee~~|240<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~—~~|
|VGE<br>~~ee~~|Gate-emitter voltage<br>~~ee~~|±20|V<br>~~ee~~<br>~~—~~|
|IF<br>~~a~~<br>~~a~~|Continuous forward current at TC= 25 °C|80(1)|A<br>~~ee~~|
|IF<br>~~a~~|Continuous forward current at TC= 100 °C|60<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|IFP<br>(2)<br>~~a~~|Pulsed forward current|240|A<br>~~ee~~<br>~~—~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|375|W|
|TSTG<br>~~a~~<br>~~a~~|Storage temperature range|- 55 to 150|°C<br>~~ee~~|
|TJ<br>~~a~~|Operating junction temperature range|- 55 to 175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



1. Current level is limited by bond wires 

2. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistance junction-case IGBT|0.4|°C/W|
|RthJC|Thermal resistance junction-case diode|1.14|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



DocID024154 Rev 7 

3/20 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

|||~~a~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|V(BR)CES<br>~~ee~~<br>~~|)~~|Collector-emitter<br>breakdown voltage<br>(VGE= 0)<br>~~ee~~<br>~~|)~~|IC= 2 mA<br>~~ee~~<br>~~a~~<br>|600<br>~~ee~~<br>~~e~~~~**e**~~<br>|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|VCE(sat)<br>~~|)~~<br>~~Pp~~|Collector-emitter saturation<br>voltage<br>~~ee~~<br>~~|) ~~<br>~~UE~~<br>~~Pp~~|VGE= 15 V, IC= 60 A<br>~~a~~<br>~~ee~~<br>~~Fr~~|~~ee~~<br>~~e~~~~**e**~~<br>~~Fr~~|1.85<br>~~ee~~<br>~~ee~~|2.3<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~UE~~<br>~~ee~~|
|||VGE= 15 V, IC= 60 A<br>TJ= 125 °C<br>~~Fr~~|~~e~~~~**e**~~<br>~~Fr~~|2.15<br>~~ee~~|~~ee~~||
|||VGE= 15 V, IC= 60 A<br>TJ= 175 °C<br> ~~Fr~~<br>~~UE~~|~~e~~~~**e**~~<br>~~Fr~~<br>~~UE~~<br>~~ee~~|2.35<br>~~ee~~<br>~~UE~~<br>~~ee~~|~~ee~~<br>~~UE~~<br>~~ee~~||
|VF<br>~~|)~~<br>~~Pp~~<br>~~ee~~|Forward on-voltage<br>~~|) ~~<br>~~ee~~<br>~~Pp~~<br>~~es~~<br>~~esees~~|IF= 60 A<br> <br>~~ee~~<br>~~err~~|~~e~~~~**e** ~~<br><br>~~ee~~<br>~~ee~~<br>~~err~~|2<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|2.6<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|
|||IF= 60 A TJ= 125 °C<br>~~err~~|~~ee~~<br>~~err~~<br>~~**ee**~~|1.7<br>~~ee~~<br>~~err~~<br>~~ee~~|~~ee~~<br>~~err~~<br>~~e~~~~**e**~~|V<br>~~ee~~<br>~~err~~<br>~~ee~~|
|||IF= 60 A TJ= 175 °C<br>~~err~~<br>~~es~~<br>~~ees~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~**ee**~~<br>~~ees~~|1.6<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~|
|VGE(th)<br>~~Pp~~<br>~~ee~~|Gate threshold voltage<br>~~Pp~~<br>~~esees~~|VCE= VGE, IC= 1 mA<br>~~ees~~|5<br>~~ee ~~<br>~~**ee**~~<br>~~ees~~|6<br> ~~ee ~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|7<br> ~~ee~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~ee~~<br>~~ees~~|
|ICES<br>~~ee~~<br>~~a~~|Collector cut-off current<br>(VGE= 0)<br>~~esees~~<br>~~a~~|VCE= 600 V<br>~~ees~~<br>~~a~~|~~**ee** ~~<br>~~ees~~<br>~~a~~|~~ee ~~<br>~~ees~~<br>~~Ge ~~<br>~~a~~|25<br> ~~e~~~~**e** ~~<br>~~ees~~<br> ~~e~~<br>~~a~~|µA<br> ~~ee~~<br>~~ees~~<br>~~a~~|
|IGES<br>~~ee~~|Gate-emitter leakage<br>current (VCE= 0)<br>~~ee~~|VGE= ± 20 V<br>~~ee~~|~~ee~~|~~ee~~|±250<br>~~ee~~|nA<br>~~ee~~|



## **Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|8000|-|pF|
|Coes|Output capacitance||-|280|-|pF|
|Cres|Reverse transfer<br>capacitance||-|170|-|pF|
|Qg|Total gate charge|VCC= 480 V, IC= 60 A,<br>VGE= 15 V, see_Figure 29_|-|334|-|nC|
|Qge|Gate-emitter charge||-|130|-|nC|
|Qgc|Gate-collector charge||-|58|-|nC|



4/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load)** 

|**Symbol**<br>~~ee~~<br>~~es~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~ee ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|td(on)<br>~~es~~<br>~~—————~~|Turn-on delay time<br>~~—————~~|VCE= 400 V, IC= 60 A,<br>RG= 4.7Ω, VGE= 15 V_,_<br>see_Figure 28_<br>~~ee ~~|-<br>~~ee~~<br>~~TT~~|60<br>~~ee ee~~<br>~~TT~~|-<br>~~ee~~<br>~~TT~~|ns<br>~~ee~~<br>~~TT~~|
|tr<br>~~es~~<br>~~—————~~<br>~~————~~|Current rise time<br>~~—————~~<br>~~————~~||-<br> ~~ee~~<br>~~TT~~<br>~~=~~|20<br>~~ee ee~~<br>~~TT~~<br>~~=~~|-<br>~~ee~~<br>~~TT~~<br>~~=~~|ns<br>~~ee~~<br>~~TT~~<br>~~=~~|
|(di/dt)on<br>~~—————~~<br>~~————~~<br>~~————~~|Turn-on current slope<br>~~—————~~<br>~~————~~<br>~~————~~||-<br>~~TT~~<br>~~=~~<br>~~ea~~|2365<br>~~TT~~<br>~~=~~<br>~~ea~~|-<br>~~TT~~<br>~~=~~<br>~~ea~~|A/µs<br>~~TT~~<br>~~=~~<br>~~ea~~|
|td(off)<br>~~————~~<br>~~————~~<br>~~————~~|Turn-off delay time<br>~~————~~<br>~~————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~<br>~~ea~~|208<br>~~=~~<br>~~ea~~<br>~~ea~~|-<br>~~=~~<br>~~ea~~<br>~~ea~~|ns<br>~~=~~<br>~~ea~~<br>~~ea~~|
|tf<br>~~————~~<br>~~————~~<br>~~ee~~|Current fall time<br>~~————~~<br>~~————~~||-<br>~~ea~~<br>~~ea~~<br>~~Tee~~|14<br>~~ea~~<br>~~ea~~<br>~~Tee~~|-<br>~~ea~~<br>~~ea~~<br>~~Tee~~|ns<br>~~ea~~<br>~~ea~~<br>~~Tee~~|
|Eon<br>(1)<br>~~————~~<br>~~ee~~<br>~~ee~~|Turn-on switching energy<br>~~————~~||-<br>~~ea~~<br>~~Tee~~|0.75<br>~~ea~~<br>~~Tee~~|-<br>~~ea~~<br>~~Tee~~|mJ<br>~~ea~~<br>~~Tee~~|
|Eoff<br>(2)<br>~~ee~~<br>~~ee~~<br>~~—————~~|Turn-off switching energy<br>~~—————~~||-<br>~~Tee~~<br>~~=~~|0.55<br>~~Tee~~<br>~~=~~|-<br>~~Tee~~<br>~~=~~|mJ<br>~~Tee~~<br>~~=~~|
|Ets<br>~~ee~~<br>~~—————~~<br>~~————~~|Total switching energy<br>~~—————~~<br>~~————~~||-<br>~~=~~<br>~~Te~~|1.3<br>~~=~~<br>~~Te~~|-<br>~~=~~<br>~~Te~~|mJ<br>~~=~~<br>~~Te~~|
|td(on)<br>~~—————~~<br>~~————~~<br>~~————~~|Turn-on delay time<br>~~—————~~<br>~~————~~<br>~~————~~|VCE= 400 V, IC= 60 A_,_<br>RG= 4.7Ω, VGE= 15 V,<br>TJ= 175 °C, see_Figure 28_|-<br>~~=~~<br>~~Te~~<br>~~ea~~|57<br>~~=~~<br>~~Te~~<br>~~ea~~|-<br>~~=~~<br>~~Te~~<br>~~ea~~|ns<br>~~=~~<br>~~Te~~<br>~~ea~~|
|tr<br>~~————~~<br>~~————~~<br>~~————~~|Current rise time<br>~~————~~<br>~~————~~<br>~~————~~||-<br>~~Te~~<br>~~ea~~<br>~~ea~~|23<br>~~Te~~<br>~~ea~~<br>~~ea~~|-<br>~~Te~~<br>~~ea~~<br>~~ea~~|ns<br>~~Te~~<br>~~ea~~<br>~~ea~~|
|(di/dt)on<br>~~————~~<br>~~————~~<br>~~ee~~|Turn-on current slope<br>~~————~~<br>~~————~~||-<br>~~ea~~<br>~~ea~~|2191<br>~~ea~~<br>~~ea~~|-<br>~~ea~~<br>~~ea~~|A/µs<br>~~ea~~<br>~~ea~~|
|td(off)<br>~~————~~<br>~~ee~~<br>~~ee~~|Turn-off delay time<br>~~————~~||-<br>~~ea~~|216<br>~~ea~~|-<br>~~ea~~|ns<br>~~ea~~|
|tf<br>~~ee~~<br>~~ee~~<br>~~—————~~|Current fall time<br>~~—————~~||-<br>~~=~~|27<br>~~=~~|-<br>~~=~~|ns<br>~~=~~|
|Eon<br>(1)<br>~~ee~~<br>~~—————~~<br>~~————~~|Turn-on switching energy<br>~~—————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~|1.5<br>~~=~~<br>~~ea~~|-<br>~~=~~<br>~~ea~~|mJ<br>~~=~~<br>~~ea~~|
|Eoff<br>(2)<br>~~—————~~<br>~~————~~<br>~~ae~~|Turn-off switching energy<br>~~—————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~<br>~~ETT~~|0.8<br>~~=~~<br>~~ea~~<br>~~ETT~~|-<br>~~=~~<br>~~ea~~<br>~~ETT~~|mJ<br>~~=~~<br>~~ea~~<br>~~ETT~~|
|Ets<br>~~————~~<br>~~ae~~|Total switching energy<br>~~————~~||-<br>~~ea~~<br>~~ETT~~|2.3<br>~~ea~~<br>~~ETT~~|-<br>~~ea~~<br>~~ETT~~|mJ<br>~~ea~~<br>~~ETT~~|



2. Including the tail of the collector current. 

**Table 7. Diode switching characteristics (inductive load)** 

|**Symbol**<br>~~a~~|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr<br>~~a~~<br>~~es~~|Reverse recovery time|IF= 60 A, VR= 400 V,<br>VGE= 15 V_,_<br>diF/dt = 1000 A/µs<br>see_Figure 28_<br>~~7~~<br>~~=~~<br>~~=~~<br>~~ptt~~<br>~~a~~<br>~~Ee~~|-<br>~~7~~|74<br>~~7~~|-<br>~~7~~|ns<br>~~7~~|
|Qrr<br>~~es~~<br>~~es~~|Reverse recovery charge||-<br>~~7~~<br>~~=~~|703<br>~~7~~<br>~~=~~|-<br>~~7~~<br>~~=~~|nC<br>~~7~~<br>~~=~~|
|Irrm<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~7~~<br>~~=~~<br>~~=~~|19<br>~~7~~<br>~~=~~<br>~~=~~|-<br>~~7~~<br>~~=~~<br>~~=~~|A<br>~~7~~<br>~~=~~<br>~~=~~|
|dIrr//dt<br>~~es~~<br>~~PP~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~PP~~||-<br>~~=~~<br>~~ptt~~|714<br>~~=~~<br>~~ptt~~|-<br>~~=~~<br>~~ptt~~|A/µs<br>~~=~~<br>~~ptt~~|
|Err<br>~~a~~<br>~~ee~~|Reverse recovery energy||-<br>~~a~~<br>~~Ee~~|184<br>~~a~~<br>~~Ee~~|-<br>~~a~~<br>~~Ee~~|µJ<br>~~a~~<br>~~Ee~~|
|trr<br>~~ee~~<br>~~es~~|Reverse recovery time|IF= 60 A, VR= 400 V,<br>VGE= 15 V<br>diF/dt = 1000 A/µs<br>TJ= 175 °C, see_Figure 28_<br>~~Ee~~<br>~~=~~<br>~~=~~<br>~~ptt~~<br>~~EE~~|-<br>~~Ee~~<br>~~=~~|131<br>~~Ee~~<br>~~=~~|-<br>~~Ee~~<br>~~=~~|ns<br>~~Ee~~<br>~~=~~|
|Qrr<br>~~ee~~<br>~~es~~<br>~~es~~|Reverse recovery charge||-<br>~~Ee~~<br>~~=~~<br>~~=~~|2816<br>~~Ee~~<br>~~=~~<br>~~=~~|-<br>~~Ee~~<br>~~=~~<br>~~=~~|nC<br>~~Ee~~<br>~~=~~<br>~~=~~|
|Irrm<br>~~es~~<br>~~es~~|Reverse recovery current||-<br>~~=~~<br>~~=~~|43<br>~~=~~<br>~~=~~|-<br>~~=~~<br>~~=~~|A<br>~~=~~<br>~~=~~|
|dIrr//dt<br>~~es~~<br>~~PP~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~PP~~||-<br>~~=~~<br>~~ptt~~|404<br>~~=~~<br>~~ptt~~|-<br>~~=~~<br>~~ptt~~|A/µs<br>~~=~~<br>~~ptt~~|
|Err<br>~~a~~|Reverse recovery energy||-<br>~~EE~~|821<br>~~EE~~|-<br>~~EE~~|µJ<br>~~EE~~|



DocID024154 Rev 7 

5/20 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 3. Collector current vs. temperature case** 

**==> picture [420 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2. Power dissipation vs. case  Figure 3. Collector current vs. temperature case<br>temperature<br>Ptot (W) AM17139v1 IC (A) AM17140v1<br>350 At | tt tt 80 PT TT [TT]<br>VGE > 15 V, T_ J < 175 °C_<br>70<br>300 PIN | | ft ft TT [Tu]<br>60 P| |INE|<br>250<br>50<br>200<br>SENSE 40 SEEN<br>150<br>BaeeNEee 30 TTT<br>100<br>20<br>50 10<br>0 HFE E EEENENS |  E 0 SE E ENER<br>0 25 50 75 100 125 150 175 TC (°C) 0 25 50 75 100 125 150 175 TC (°C)<br>Figure 4. Output characteristics @ 25 °C Figure 5. Output characteristics @ 175 °C<br>Ic (A) AM17141v1 IC(A) AM17142v1<br>VGE=15 V<br>TJ =25 °C VGE=15 V 13 V TJ =175 °C<br>200 | fi 200 ,| | {4<br>11 V<br>13 V 11 V<br>150<br>150<br>9 V 9 V<br>100 100<br>50 po 50 Ae<br>) Via<br>7 V 7 V<br>0 TAL | ft 0 van<br>0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE (V)<br>Figure 6. VCE(SAT) vs. junction temperatureCE(SAT) vs. junction temperature vs. junction temperature Figure 7. VCE(SAT) vs. collector current<br>VCE(sat) AM17143v1 VCE(sat) AM17144v1<br>(V) (V)<br>3.2 V GE  =15 V Ta IC= 120 A 3.2 V GE  = 15 V COO<br>3.0 3.0 T J = 175 °C<br>2.8 ea) 2.8 EE eth<br>2.6 FECES 2.6 PEE EEE<br>2.4 2.4 T J  = 25 °C<br>IC= 60 A<br>2.2 Coa 2.2 SEene7amagen<br>2.0 Oa 2.0 SE AnEeaaae<br>1.8 1.8<br>TJ = - 40 °C<br>1.6 ACERT I C = 30 A 1.6 foe<br>1.4 1.4<br>1.2 SECEEEELE 1.2 PEELE<br>-50 -25 0 25 50 75 100 125 150 175 TJ (ºC) 10 20 30 40 50 60 70 80 90 100 110 120 IC(A)<br>**----- End of picture text -----**<br>


**Figure 4. Output characteristics @ 25 °C** 

**Figure 5. Output characteristics @ 175 °C** 

**Figure 6. VCE(SAT) vs. junction temperatureCE(SAT) vs. junction temperature vs. junction temperature** 

6/20 DocID024154 Rev 7 ~~>~~ 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 9. Safe operating area** 

**==> picture [438 x 582] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM17145v1 IC (A) AM17146v1<br>Ic [A]<br>110 eetTT 1 μs<br>—<br>100 Tc=80°C 100 100 μs<br>90<br>80 rs Tc=100 °C TT e !<br>10 1 ms<br>70 — LTSTSKU bw<br>60 Nl<br>50 tT TTTENS 1<br>40 tT TTTTENE<br>30 0.1<br>rectangular current shape, (single pulse TC =25°C,<br>20 (duty cycle=0.5, VCC = 400V, RG=4.7Ω, TJ <=175 °C; VGE =15 V)<br>10 VGE = 0/15 V, TJ =175 ° C)<br>0.01<br>0 1 10 100 VCE (V)<br>1 10 f [kHz]<br>Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current<br>IC (A) AM17146v1 VF (V) AM17148v1<br>ee<br>ee TJ= - 40°C<br>VCE= 5V TJ= 25°C 2.8<br>200<br>a a pf | fe<br>ny 4 2.4 ft ||ea<br>150<br>ye SA<br>2<br>en) / e722<br>100<br>1.6<br>af LI<br>25°C<br>50<br>175 °C 1.2<br>pf VA eS<br>175°C<br>- 40 °C<br>0 2 an 0.8 Mafeee<br>6 7 8 9 10 11 VGE (V) 10 30 50 70 90 110 IF (A)<br>Figure 12. Normalized VGE(th) vs. junction  Figure 13. Normalized V(BR)CES vs. junction (BR)CES vs. junction  vs. junction<br>temperature temperature<br>VGE(th) AM17149v1 V(BR)ces AM17150v1<br>norm norm<br>VCE= VGE<br>1.1 IC= 1 mA IC = 2 mA<br>1.1<br>EEE HTT EAE<br>1.0<br>Nee pt fii | |e<br>NX eee 4<br>0.9<br>FEE NCEE 1.0 Uf<br>0.8<br>Fit tt} | ATT I AL<br>pit tt tA PITA TTT Tyr<br>0.7<br>0.6 T- EE EP E EESNE)Eee | 0.9 ECAEEEEE E EE<br>-50 -25 0 25 50 75 100 125 150 175 TJ (ºC) -50 -25 0 25 50 75 100 125 150 175 TJ(ºC)<br>**----- End of picture text -----**<br>


**Figure 13. Normalized V(BR)CES vs. junction (BR)CES vs. junction  vs. junction temperature** 

DocID024154 Rev 7 

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**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

**Figure 14. Capacitance variations** 

**==> picture [203 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (pF) AM17151v1<br>10000 C ies<br>C oes<br>1000 0)<br>C res<br>=F HH O P RS<br>100<br>| |S<br>f = 1MHz, VGE=0<br>10 ECO C-C<br>0.1 1 10 VCE (V)<br>**----- End of picture text -----**<br>


**Figure 15. Gate charge vs. gate-emitter voltage** 

**==> picture [209 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE (V) AM17152v1<br>16 VCC = 480V<br>IC = 60A<br>14<br>12<br>10<br>8<br>6 a a<br>4 aaa<br>2<br>fi | tf<br>0<br>0 100 200 300 Qg (nC)<br>**----- End of picture text -----**<br>


**Figure 16. Switching energy vs. collector current** 

**Figure 17. Switching energy vs. gate resistance** 

**==> picture [28 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM17154v1<br>**----- End of picture text -----**<br>


**==> picture [434 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
E (μJ)<br>E (μJ) AM17153v1<br>4500<br>4500 Coo VCC 400V, VGE= 15V,  4000 Pt V I CCC = 60 A, T =400V, V it) J = 175  GE= 15V, ° C | tt<br>4000 Rg=4.7Ω, T J = 175°C<br>3500<br>3500 ea[ EON aae<br>3000<br>3000 PL HAH none7eeenn<br>EEL ELT LYE 2500 nap daeeesa<br>2500 E ON<br>2000 ee eee 2000 VA + EOFF |<br>1500 PitPiptt TY ZAREERE| er 1500 Voteflr. fl|<br>1000 et ee 1000 vaGneeeee<br>500 E OFF 500<br>0 peZaeaTeee 0 4 10 20 30 40 RG (Ω)<br>0 10 20 30 40 50 60 70 80 90 100 110120 Ic (A)<br>**----- End of picture text -----**<br>


**Figure 18. Switchng energy vs.junction temperature** 

**Figure 19. Switching energy vs. collector emitter voltage** 

**==> picture [434 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
E (μJ) AM17156v1<br>E (μJ) AM17155v1 VGE = 15V,  TJ = 175°C<br>1500 2000 I C = 60 A, Rg = 4.7 Ω EON<br>1400 SS] V CC  =400V, V GE = 15V,  1800 o£ ee<br>1300 IC = 60 A, Rg = 4.7 Ω<br>1600<br>1200<br>Po aoe 1400 Ff | |[Ks]<br>1100<br>1000 paee EON ee ee 1200 PKL<br>900 EOFF<br>1000<br>800 ee ee A<br>700 An 800 P| A |LE<br>EOFF<br>600 —T_ 600 iA Lea<br>500<br>400<br>400 ame | 150 200 — 250 300 350 400 450 Vce (V)<br>25 50 75 100 125 150 TJ (ºC)<br>**----- End of picture text -----**<br>


8/20 DocID024154 Rev 7 ~~>~~ 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

## **Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance** 

**==> picture [455 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
t(ns) AM17157v1 t(ns) AM17159v1<br>VTj =175°C, Rg = 4.7 CC  = 400V, V GE  = 15V,  Ω VTj =175°CCC= 400V, VIc = 60 AGE = 15V,<br>2 —— —————<br>1000<br>— | FS<br>tdoff tdoff<br>100 ie S S t r =<br>tr tdon<br>| B E<br>100 tdon<br>Se esas<br>tf t f<br>10 =| | | ft [| 10 aee<br>0 20 40 60 80 100 Ic (A) 0 10 20 30 40 Rg (Ω)<br>Figure 22. Reverse recovery current vs. diode  Figure 23. Reverse recovery time vs. diode<br>current slope current slope<br>Irm (A) AM17158v1 trr (ns) AM17160v1<br>Vr= 400 V, IF = 60 A Vr = 400V, IF = 60 A<br>50<br>Pt A 200 Noo ELLE<br>40<br>175°C 150 175 °C<br>30 BEREEE an PNET<br>fap _aneee CPSC<br>100<br>20<br>TJ=25°C<br>10 Pope | 50 aa TJ REP =25°C<br>0 VeradeneneeeEa 0 FEEL —_ ELE<br>0 500 1000 1500 2000 di/dt (A/μs) 0 500 1000 1500 2000 di/dt (A/μs)<br>Figure 24. Reverse recovery charge vs. diode  Figure 25. Reverse recovery energy vs. diode<br>current slope current slope<br>Qrr (nC) AM17161v1 Err AM17162v1<br>(μJ)<br>Vr= 400V, IF = 60 A<br>1400 VCC = 400V, VGE = 15V, IF = 60A<br>2500<br>1200<br>2000 175 °C 175°C<br>ee] | 1000  Ee<br>1500 feof Lt 800 EEEae<br>600<br>1000<br>TJ=25°C<br>400<br>500 ACT TE TWEE LL<br>re 200 Sf<br>TJ=25°C<br>0 “tit tee 0 TT LL<br>0 500 1000 1500 2000 di/dt (A/μs) 0 500 1000 1500 2000 2500 3000 di/dt (A/μs)<br>**----- End of picture text -----**<br>


DocID024154 Rev 7 9/20 ~~[57~~ 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Electrical characteristics** 

**Figure 26. Thermal data for IGBT** 

**==> picture [273 x 237] intentionally omitted <==**

**----- Start of picture text -----**<br>
K a ZthTO2T_A<br>d=0.5 HTT TT TT rer | tT<br>= HEE1oomi ttTTT|<br>|<br>LUI TEEN TNT<br>0.2<br>A a<br>el 0.1 iy<br>-1 Br<br>10<br>TP27 0.05 MA7 H<br>ani) 7AMnsill Tr Zp=k Rye I<br>es) a il<br>0.02<br>Sono 6= tp/T ll<br>alt mil |<br>Se |<br>Att Lit 0.01 UEUT |<br>Single pulse T<br>10-2<br>“un -5 -4 ull -3 ff] “Pd -2 -1 |<br>10 10 10 10 10 tp [ (s)]<br>**----- End of picture text -----**<br>


## **Figure 27. Thermal data for diode** 

10/20 

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**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [424 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. Test circuit for inductive load  Figure 29. Gate charge test circuit<br>switching<br>> A OAI<br>c J 1 2V p u kQ ‘1 KO<br>o t SCLsL=100 pF 100 n nF<br>E oB<br>B I Cc 3.3 _|1000 Vv<br>LE pF —-£° VS Veuax |,=CONST 1000 |< 4D.U.T.<br>G\ K. ADUT ° 2200 O C<br>C)+R E aa 1" a7 kQCZ<br>- 47 kQ<br>Ww<br>Pp | 1kO<br>AM01504v1<br>Figure 30. Switching waveform Figure 31. Diode recovery time waveform<br>**----- End of picture text -----**<br>


DocID024154 Rev 7 

11/20 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

12/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Package information** 

## **4.1 TO-247 package information** 

**==> picture [163 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 32. TO-247 package outline<br>**----- End of picture text -----**<br>


DocID024154 Rev 7 13/20 ~~57~~ 

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**Package information** 

**Table 8. TO-247 package mechanical data** 

||**Table 8. TO-247 package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 8. TO-247 package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 8. TO-247 package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



14/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Package information** 

## **4.2 TO-247 long leads package information** 

## **Figure 33. TO-247 long leads package outline** 

DocID024154 Rev 7 

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**Package information** 

**Table 9. TO-247 long leads package mechanical data** 

||**Table 9. TO-247 long leads package mechanical datag leads package mechanical data leads package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 9. TO-247 long leads package mechanical datag leads package mechanical data leads package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|**Table 9. TO-247 long leads package mechanical datag leads package mechanical data leads package mechanical datapackage mechanical dataackage mechanical datage mechanical datae mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee~~<br>~~ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.90|5.00<br>~~ee~~|5.10<br>~~ee~~|
|A1<br>~~a~~|2.31|2.41|2.51|
|A2<br>~~a~~|1.90|2.00|2.10|
|b<br>~~a~~|1.16<br>||1.26<br>|
|b2<br>~~Ge~~|~~Ge~~|~~Ge~~|3.25<br>~~Ge~~|
|b3<br>~~Ge~~|~~Ge~~|~~Ge~~|2.25<br>~~Ge~~|
|c<br>~~a~~|0.59||0.66|
|D<br>~~a~~|20.90|21.00|21.10|
|E<br>~~a~~|15.70|15.80|15.90|
|E2<br>~~a~~|4.90<br>|5.00<br>|5.10<br>|
|E3<br>~~Ge~~|2.40<br>~~Ge~~|2.50<br>~~Ge~~|2.60<br>~~Ge~~|
|e<br>~~Ge~~|5.34<br>~~Ge~~|5.44<br>~~Ge~~|5.54<br>~~Ge~~|
|L<br>~~a~~|19.80|19.92|20.10|
|L1<br>~~a~~|||4.30|
|P<br>~~a~~|3.50|3.60|3.70|
|Q<br>~~a~~|5.60||6.00|
|S<br>~~a~~|6.05|6.15|6.25|



16/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Package information** 

## **4.3 TO-3P package information** 

**==> picture [158 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 34. TO-3P package outline<br>**----- End of picture text -----**<br>


**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_A<br>**----- End of picture text -----**<br>


DocID024154 Rev 7 

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**Package information** 

**Table 10. TO-3P mechanical data** 

||**Table 10. TO-3P mechanical data**|**Table 10. TO-3P mechanical data**|**Table 10. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.60|~~ee ~~|5<br> ~~ee~~|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1|1.20|
|b1<br>~~a~~|1.80||2.20|
|b2<br>~~a~~<br>~~es~~|2.80||3.20|
|c<br>~~es~~|0.55|0.60|0.75|
|D<br>~~es~~<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~||13.90||
|E<br>~~a~~|15.40||15.80|
|E1<br>~~a~~||13.60||
|E2<br>~~a~~<br>~~es~~||9.60||
|e<br>~~es~~|5.15|5.45|5.75|
|L<br>~~es~~<br>~~a~~|19.50|20|20.50|
|L1<br>~~a~~||3.50||
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~|3.10||3.30|
|Q<br>~~a~~<br>~~es~~||5||
|Q1<br>~~es~~||3.80||



18/20 

DocID024154 Rev 7 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

**Revision history** 

## **5 Revision history** 

**Table 11. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Jan-2013|1|Initial release.|
|23-Apr-2013|2|Added:<br>–<br>New order code STGWT60V60DF and new package<br>mechanical data TO-3P_Table 9 on page 16,_ _Figure 33_<br>_on page 15_.<br>–<br>_Section 2.1: Electrical characteristics (curves) on_<br>_page 6_.|
|04-Jun-2013|3|Updated_Table 4: Static characteristics_and_Figure 12 on page 7_.<br>Document status changed from preliminary to production data.|
|21-Jun-2013|4|Updated_Figure 3: Collector current vs. temperature case_.|
|12-Jul-2013|5|Updated RthJCvalue for Diode in_Table 3: Thermal data_.|
|21-Oct-2013|6|Updated title, features and description in cover page.|
|28-Sep-2016|7|Added part number STGWA60V60DF and_TO-247 long leads_<br>_package information_.<br>Updated_Table 2_ _Table 4_and_Table 6_.<br>Updated_Figure 10: Transfer characteristics._<br>Minor text changes.|



DocID024154 Rev 7 

19/20 

**STGW60V60DF, STGWA60V60DF,  STGWT60V60DF** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2016 STMicroelectronics – All rights reserved 

20/20 DocID024154 Rev 7 



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