# IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2889926/)

**URL**: https://novapart.co/products/STGW60H65FB/igbt-80-a-16-v-375-w-650-to-247-3-pins
**SKU**: STGW60H65FB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.8500
**Stock**: 200+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2889926/)

## **STGW60H65FB STGWT60H65FB** Trench gate field-stop IGBT, HB series 650 V, 60 A high speed 

**Datasheet** - **production data** 

## **Features** 

**==> picture [211 x 329] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>3<br>2<br>1 2<br>ee 1<br>TO-247 TO-3P<br>Figure 1. Internal schematic diagram<br>C (2, TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- VCE(sat) = 1.6 V (typ.) @ IC = 60 A 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

## **Applications** 

- Photovoltaic inverters 

- High frequency converters 

## **Description** 

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW60H65FB|GW60H65FB|TO-247|Tube|
|STGWT60H65FB|GWT60H65FB|TO-3P|Tube|



April 2015 

DocID025187 Rev 4 

1/16 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STGW60H65FB, STGWT60H65FB** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
||4.1<br>TO-247 package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



2/16 

DocID025187 Rev 4 

**STGW60H65FB, STGWT60H65FB** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|650|V|
|IC|Continuous collector current at TC= 25 °C|80(1)|A|
||Continuous collector current at TC= 100 °C|60||
|ICP<br>(2)|Pulsed collector current|240|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Total dissipation at TC= 25 °C|375|W|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|-55 to 175||



1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data Symbol Parameter Value Unit** Rthj-C Thermal resistance junction-case 0.4 °C/W ~~rs~~ Rthj-A Thermal resistance junction-ambient 50 

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**STGW60H65FB, STGWT60H65FB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

**==> picture [140 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Table 4. Static characteristics<br>**----- End of picture text -----**<br>


**==> picture [404 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Test conditions Min. Typ. Max. Unit<br>Collector-emitter<br>V(BR)CES breakdown voltage IC = 2 mA 650 V<br>(VGE = 0)<br>ee<br>VGE = 15 V, IC = 60 A 1.60 2.0<br>ee<br>Collector-emitter saturation  VGE = 15 V, IC = 60 A 1.75<br>VCE(sat) voltage TJ = 125 °C V<br>VGE = 15 V, IC = 60 A<br>1.85<br>TJ = 175 °C<br>|) LTFre e ee<br>VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V<br>a es es en ee ee<br>Collector cut-off current<br>ICES (VGE = 0) VCE = 650 V 25 µA<br>i ae<br>Gate-emitter leakage<br>IGES current (VCE = 0) VGE = ± 20 V ±250 nA<br>i<br>**----- End of picture text -----**<br>


## **Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|7792|-|pF|
|Coes|Output capacitance||-|262|-||
|Cres|Reverse transfer<br>capacitance||-|158|-||
|Qg|Total gate charge|VCC= 520 V, IC= 60 A,<br>VGE= 15 V, see_Figure 23_|-|306|-|nC|
|Qge|Gate-emitter charge||-|126|-||
|Qgc|Gate-collector charge||-|58|-||



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**Electrical characteristics** 

**Table 6. Switching characteristics (inductive load)** 

|~~a~~|||~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~ee~~<br>~~|~~|**Max.**<br>~~ee~~<br>~~||~~|**Unit**<br>~~ee~~<br>~~|~~|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on delay time<br>~~ee~~|VCE= 400 V, IC= 60 A,<br>RG= 10Ω, VGE= 15 V,<br>see_Figure 22_|-<br>~~ee~~<br>~~|~~<br>~~|~~|66<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~||~~<br>~~|~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|tr<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|Current rise time<br>~~ee~~||-<br>~~ee ~~<br>~~|~~<br>~~|~~|38<br> ~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|(di/dt)on<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on current slope<br>~~ee~~||-<br>~~|~~<br>~~|~~|1216<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|A/µs<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|td(off)<br>~~a~~<br>~~a~~<br>~~es~~|Turn-off delay time||~~|~~|210<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|tf<br>~~a~~<br>~~es~~<br>~~es~~|Current fall time<br>~~ee~~||-<br>~~|~~<br>~~_|~~|20<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~|ns<br>~~|~~<br>~~|~~<br>~~|~~|
|Eon<br>(1)<br>~~es~~<br>~~es~~<br>~~a~~|Turn-on switching loss<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~|1590<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>||-<br>~~||~~<br>~~|~~<br>||µJ<br>~~|~~|
|Eoff<br>(2)<br>~~es~~<br>~~es~~<br>~~a~~<br>~~a~~|Turn-off switching loss<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~<br>~~|~~|900<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>|<br>~~|~~<br>~~||~~|µJ<br>~~|~~<br>~~|~~<br>~~||~~|
|Ets<br>~~es~~<br>~~a~~<br>~~a~~<br>~~a~~|Total switching loss<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_ |~~<br>~~_ |~~<br>~~|~~|2490<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>|<br>~~|~~<br>~~||~~<br>~~||~~|µJ<br>~~|~~<br>~~||~~<br>~~|~~|
|td(on)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on delay time<br>~~ee~~|VCE= 400 V, IC= 60 A,<br>RG= 10Ω, VGE= 15 V,<br>TJ= 175 °C, see_Figure 22_|-<br>~~|~~<br>~~|~~|59<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~| |~~<br>~~|~~<br>~~|~~<br>~~|~~|
|tr<br>~~a~~<br>~~a~~<br>~~es~~|Current rise time||-<br>~~|~~|40<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~||~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|(di/dt)on<br>~~a~~<br>~~es~~<br>~~es~~|Turn-on current slope<br>~~ee~~||-<br>~~|~~<br>~~_|~~|1230<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~|A/µs<br>~~|~~<br>~~|~~<br>~~|~~|
|td(off)<br>~~es~~<br>~~es~~<br>~~a~~|Turn-off delay time<br>~~ee~~<br>~~ee~~||~~_|~~<br>~~_|~~|242<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>||~~||~~<br>~~|~~<br>||ns<br>~~|~~|
|tf<br>~~es~~<br>~~es~~<br>~~a~~<br>~~a~~|Current fall time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_|~~<br>~~_|~~<br>~~_|~~|147<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>||-<br>~~| |~~<br>~~|~~<br>|<br>~~|~~|ns<br>~~|~~|
|Eon<br>(1)<br>~~es~~<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on switching loss<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~_ |~~<br>~~_ |~~<br>~~_|~~|2860<br>~~|~~<br>~~|~~<br>~~|~~<br>|<br>~~|~~<br>|<br>~~|~~|-<br>~~|~~<br>|<br>~~|~~<br>~~||~~|µJ<br>~~|~~|
|Eoff<br>(2)<br>~~a~~<br>~~a~~|Turn-off switching loss<br>~~ee~~||-<br>~~_ |~~<br>~~|~~|1255<br>~~|~~<br>|<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~||~~<br>~~||~~|µJ<br>~~|~~<br>~~|~~<br>~~|~~|
|Ets<br>~~a~~|Total switching loss||-<br>~~|~~|4115<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~| |~~<br>~~|~~<br>~~||~~|µJ<br>~~|~~<br>~~|~~<br>~~|~~|



2. Turn-off loss also includes the tail of the collector current. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curve)** 

**Figure 2. Output characteristics (TJ = 25°C)** 

## **Figure 3. Output characteristics (TJ = 175°C)** 

**Figure 4. Transfer characteristics** 

**Figure 5. Collector current vs. case temperature** 

**==> picture [184 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD270820131347FSR<br>IC<br>(A)<br>80<br>60<br>40<br>20<br>VGE = 15V, TJ = 175 °C<br>0<br>0 25 50 75 100 125 150 TC(°C)<br>**----- End of picture text -----**<br>


**Figure 6. Power dissipation vs. case temperature** 

**==> picture [185 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD270820131401FSR<br>Ptot<br>(W)<br>300<br>200<br>100<br>VGE = 15V, TJ = 175 °C<br>0<br>0 25 50 75 100 125 150 TC(°C)<br>**----- End of picture text -----**<br>


**Figure 7. VCE(sat) vs. junction temperature** 

**==> picture [203 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCE(sat) GIPD021020131457FSR<br>(V)<br>2.6 VGE= 15V<br>IC= 120A<br>2.4<br>2.2<br>2.0 IC= 60A<br>1.8<br>1.6 IC= 30A<br>1.4<br>1.2<br>-50 0 50 100 150 Tj(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8. VCE(sat) vs. collector current** 

**Figure 9. Forward bias safe operating area** 

**==> picture [195 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD270820131423FSR<br>VCE(sat)<br>(V) VGE= 15V<br>2.4<br>2.2<br>TJ= 25°C<br>2.0<br>1.8 TJ= 175 ° C<br>1.6<br>TJ= -40°C<br>1.4<br>1.20 20 40 60 80 100 IC(A)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized V(BR)CES vs. junction temperature** 

**==> picture [192 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280820131415FSR<br>V(BR)CES<br>(norm)<br>1.1<br>IC= 2mA<br>1.0<br>0.9<br>-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 11. Normalized VGE(th) vs. junction temperature** 

**==> picture [199 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280820131503FSR<br>VGE(th)<br>(norm)<br>IC= 1mA<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Gate charge vs. gate-emitter voltage** 

**Figure 13. Switching loss vs temperature** 

**==> picture [422 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE GIPD280820131507FSR E (μJ) GIPD290820131623FSR<br>(V) VCC= 520V, IC= 60A VCC= 400V, VGE= 15V<br>Ig= 1mA Rg= 10Ω, IC= 60A EON<br>14<br>2600<br>12<br>10<br>1800<br>8<br>EOFF<br>6<br>1000<br>4<br>2<br>00 50 100 150 200 250 300 350 Qg(nC) 20025 50 75 100 125 150 TJ(°C)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **Figure 14. Switching loss vs gate resistance** 

## **Figure 15. Switching loss vs collector current** 

GIPD280820131538FSR 

**==> picture [408 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280820131527FSR<br>E(μJ) E (μJ)<br>EON 7000 VCC= 400V, VGE= 15V<br>Rg= 10Ω, TJ= 175°C<br>2900 6000<br>5000<br>EON<br>2100 4000<br>EOFF<br>EOFF 3000<br>1300 2000<br>VCC = 400V, VGE = 15V<br>EEE IC = 60A, TJ = 175 °C 1000 ee<br>Cope ty waa<br>500<br>2 6 10 14 18 RG(Ω) 00 20 40 60 80 100 IC(A)<br>**----- End of picture text -----**<br>


**Figure 16. Switching loss vs collector emitter voltage** 

**Figure 17. Switching times vs collector current** 

**==> picture [418 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280820131554FSR GIPD280820131613FSR<br>E (μJ) t<br>4300 TJ= 175°C, VGE= 15V EON (ns)<br>Rg= 10Ω, IC= 60A tdof<br>3300<br>100<br>tdon<br>2300<br>t r<br>EOFF<br>10 tf<br>1300<br>TJ= 175°C, VGE= 15V<br>Rg= 10Ω, VCC= 400V<br>1<br>300150 250 350 450 VCE(V) 0 20 40 60 80 100 IC(A)<br>**----- End of picture text -----**<br>


**Figure 18. Switching times vs gate resistance** 

**Figure 19. Capacitance variations** 

**==> picture [414 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD280820131622FSR GIPD280820131518FSR<br>t C(pF)<br>(ns) T J = 175°C, V GE = 15V<br>f = 1 MHz<br>I C = 60A, V CC = 400V<br>10000<br>tdoff Cies<br>100 1000<br>tdon<br>tf 100 Coes<br>Cres<br>t r<br>10 10<br>4 8 12 16 20 Rg(Ω) 0.1 1 10 100 VCE(V)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 20. Collector current vs. switching frequency** 

**Figure 21. Thermal impedance** 

**==> picture [418 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ic (A) GIPD080120151105FSR K ZthTO2T_A<br>d=0.5 1 a a ee 0<br>SeYtSart TT SerieserrtTeases<br>eo eT<br>100 A<br>Tc=80°C 0.2<br>i<br>een A<br>0.1<br>80 EA<br>Tc=100  [°] C 10-1 LA<br>ail 77a 0.05 tt ec<br>SSA Ly ee ee<br>60 ae eo)<br>Ses260A 0.02 CHT [TP] [2p] |<br>0.01<br>40 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, ETAlta = = te/*  k Rinse<br>20 V GE = 0/15 V, T J =175°C) 10-2 Single pulse t<br>1 10 f (kHz) 10 = -5 un_cull_ 10-4 UM 10-3  UT IM 10 E -2 25 10 To -1 tp [ (s)]<br>**----- End of picture text -----**<br>


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**STGW60H65FB, STGWT60H65FB** 

**Test circuits** 

## **3 Test circuits** 

**Figure 22. Test circuit for inductive load switching** 

**Figure 23. Gate charge test circuit** 

**==> picture [261 x 129] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2V 47 k 0 k<br>| [1 a<br>100n F<br>V<br>ce | g=CONST<br>VjO =20V=Vem 39 00ax O 10 k N D.U.T.<br>k<br>iF | 2. 7 9 V g<br>iL | {7 I °<br>47 k O<br>JL c o<br>~~ WwW 1 k 0<br>AM01504v1 AM01505v1<br>**----- End of picture text -----**<br>


## **Figure 24. Switching waveform** 

**==> picture [223 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
90%<br>VG fe 10%<br>| ————~, _ 90%<br>VCE fo Tr(Voff) 10%<br>| *°V p |; EF. Tcross T<br>90%<br>| SS! |<br>IC Td(on)Ton Tr(Ion) Td(offToff) Tf 10%<br>~—t— —<br>AM01506v1<br>**----- End of picture text -----**<br>


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DocID025187 Rev 4 

**STGW60H65FB, STGWT60H65FB** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO-247 package information** 

**==> picture [163 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. TO-247 package outline<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


DocID025187 Rev 4 

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**STGW60H65FB, STGWT60H65FB** 

**Package information** 

**Table 7. TO-247 mechanical data** 

||**Table 7. TO-247 mechanical data**|**Table 7. TO-247 mechanical data**|**Table 7. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



12/16 

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**STGW60H65FB, STGWT60H65FB** 

**Package information** 

## **4.2 TO-3P package information** 

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**----- Start of picture text -----**<br>
Figure 26. TO-3P package outline<br>**----- End of picture text -----**<br>


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8045950_B<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 8. TO-3P mechanical data** 

||**Table 8. TO-3P mechanical data**|**Table 8. TO-3P mechanical data**|**Table 8. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.60|4.80<br>~~ee ~~|5<br> ~~ee~~|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1.00|1.20|
|b1<br>~~a~~|1.80|2.00|2.20|
|b2<br>~~a~~<br>~~es~~|2.80|3.00|3.20|
|c<br>~~es~~|0.55|0.60|0.75|
|D<br>~~es~~<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~|13.70|13.90|14.10|
|E<br>~~a~~|15.40|15.60|15.80|
|E1<br>~~a~~|13.40|13.60|13.80|
|E2<br>~~a~~<br>~~es~~|9.40|9.60|9.90|
|e<br>~~es~~|5.15|5.45|5.75|
|L<br>~~es~~<br>~~a~~|19.80|20|20.20|
|L1<br>~~a~~|3.30|3.50|3.70|
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~|3.30|3.40|3.50|
|øP1<br>~~a~~<br>~~es~~|3.10|3.20|3.30|
|Q<br>~~es~~|4.80|5|5.20|
|Q1<br>~~es~~<br>~~a~~|3.60|3.80|4|



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**Revision history** 

## **5 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|30-Aug-2013|1|Initial release.|
|28-Feb-2014|2|Updated title and features in cover page.|
|09-Jan-2015|3|Updated features in cover page,_Table 2: Absolute maximum ratings_,<br>_Table 4: Static characteristics_and_Table 6: Switching characteristics_<br>_(inductive load)_.<br>Updated_Figure 5: Collector current vs. case temperature_,_Figure 6:_<br>_Power dissipation vs. case temperature_,_Figure 8: VCE(sat) vs._<br>_collector current_,_Figure 17: Switching times vs collector current_,<br>_Figure 18: Switching times vs gate resistance_and_Figure 19:_<br>_Capacitance variations_.<br>Added_Figure 20: Collector current vs. switching frequency_.<br>Updated_Section 4: Package information_.<br>Minor text changes.|
|01-Apr-2015|4|Text edits throughout document<br>Updated_Table 2: Absolute maximum ratings_<br>Updated_Table 4: Static characteristics_<br>Updated_Table 6: Switching characteristics (inductive load)_<br>Updated_Section 2.1: Electrical characteristics (curve)_.|



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**STGW60H65FB, STGWT60H65FB** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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