# IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 4 Pins
**URL**: https://novapart.co/products/STGW60H65DFB-4/igbt-80-a-16-v-375-w-650-to-247-4-pins
**SKU**: STGW60H65DFB-4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.9800
**Stock**: 25+
**Lead Time**: 127 days (indicative)
## Description
DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | HB |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2778105/)
## **STGW60H65DFB-4**
## Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Datasheet - production data
## **Features**
- Maximum junction temperature: TJ = 175 °C
- Kelvin pin
- Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
## **Applications**
- Photovoltaic inverter
**Figure 1: Internal schematic diagram**
- High frequency converter
## **Description**
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW60H65DFB-4|G60H65DFB|TO247-4|Tube|
This is information on a product in full production.
March 2017 DocID029378 Rev 2
1/15
_www.st.com_
|**Contents**
**STGW60H65DFB-4**|**Contents**
**STGW60H65DFB-4**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 11**|
|**4**|**Package information ..................................................................... 12**|
||4.1
TO247-4 package information ......................................................... 12|
|**5**|**Revision history ............................................................................ 14**|
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**STGW60H65DFB-4**
**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|80_(1)_|A|
||Continuous collector current at TC= 100 °C|60||
|ICP_(2)_|Pulsed collector current|240|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|80_(1)_|A|
||Continuous forward current at TC= 100 °C|60||
|IFP_(2)_|Pulsed forward current|240|A|
|PTOT|Total dissipation at TC= 25 °C|375|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175||
## **Notes:**
- (1)Current level is limited by bond wires.
- (2)Pulse width is limited by maximum junction temperature.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.4|°C/W|
|RthJC|Thermal resistance junction-case diode|1.14||
|RthJA|Thermal resistance junction-ambient|50||
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**STGW60H65DFB-4**
**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 2 mA|650|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 60 A||1.6|2.0|V|
|||VGE= 15 V, IC= 60 A,
TJ= 125 °C||1.75|||
|||VGE= 15 V, IC= 60 A,
TJ= 175 °C||1.85|||
|VF|Forward on-voltage|IF= 60 A||2|2.6|V|
|||IF= 60 A, TJ= 125 °C||1.7|||
|||IF= 60 A, TJ= 175 °C||1.6|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|7792|-|nF|
|Coes|Output capacitance||-|262|-||
|Cres|Reverse transfer capacitance||-|158|-||
|Qg|Totalgate charge|VCC= 520 V, IC= 60 A,
VGE= 0 to 15 V
(see_Figure 29: " Gate_
_charge test circuit"_|-|306|-|nC|
|Qge|Gate-emitter charge||-|126|-||
|Qgc|Gate-collector charge||-|58|-||
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**Electrical characteristics**
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 60 A,
VGE= 15 V, RG= 10 Ω
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|65|-|ns|
|tr|Current rise time||-|26|-|ns|
|(di/dt)on|Turn-on current slope||-|1846|-|A/µs|
|td(off)|Turn-off-delaytime||-|261|-|ns|
|tf|Current fall time||-|21|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|346|-|µJ|
|Eoff_(2)_|Turn-off switchingenergy||-|1161|-|µJ|
|Ets|Total switchingenergy||-|1507|-|µJ|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 60 A,
VGE= 15 V, RG= 10 Ω
TJ= 175 °C
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|61|-|ns|
|tr|Current rise time||-|30|-|ns|
|(di/dt)on|Turn-on current slope||-|1640|-|A/µs|
|td(off)|Turn-off-delaytime||-|284|-|ns|
|tf|Current fall time||-|45|-|ns|
|Eon_(1)_|Turn-on switchingenergy||-|644|-|μJ|
|Eoff_(2)_|Turn-off switchingenergy||-|1633|-|μJ|
|Ets|Total switchingenergy||-|2277|-|μJ|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 60 A, VR= 400 V,
VGE= 15 V, di/dt = 1000 A/µs
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|60|-|ns|
|Qrr|Reverse recoverycharge||-|99|-|nC|
|Irrm|Reverse recoverycurrent||-|3.3|-|A|
|dIrr/dt|Peak rate of fall of reverse
recovery current during tb||-|187|-|A/µs|
|Err|Reverse recoveryenergy||-|68|-|µJ|
|trr|Reverse recoverytime|IF= 60 A, VR= 400 V,
VGE= 15 V, di/dt = 1000 A/µs,
TJ= 175 °C
(see_Figure 28: " Test circuit_
_for inductive load switching"_)|-|310|-|ns|
|Qrr|Reverse recoverycharge||-|1550|-|nC|
|Irrm|Reverse recoverycurrent||-|10|-|A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|59|-|A/µs|
|Err|Reverse recovery energy||-|674|-|µJ|
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**Electrical characteristics**
**2.1 Electrical characteristics (curves)**
**Figure 2: Power dissipation vs. case temperature**
**==> picture [172 x 168] intentionally omitted <==**
**Figure 3: Collector current vs. case temperature**
**==> picture [178 x 165] intentionally omitted <==**
**Figure 4: Output characteristics (TJ = 25 °C)**
**==> picture [197 x 164] intentionally omitted <==**
**Figure 5: Output characteristics (TJ = 175 °C)**
**==> picture [195 x 164] intentionally omitted <==**
**Figure 6: VCE(sat) vs. junction temperature**
**==> picture [192 x 169] intentionally omitted <==**
**Figure 7: VCE(sat) vs. collector current**
**==> picture [187 x 171] intentionally omitted <==**
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**Electrical characteristics**
**Figure 8: Collector current vs. switching frequency**
**==> picture [177 x 164] intentionally omitted <==**
**Figure 10: Transfer characteristics**
**==> picture [202 x 168] intentionally omitted <==**
**Figure 12: Normalized VGE(th) vs. junction temperature**
**==> picture [189 x 174] intentionally omitted <==**
**Figure 9: Forward bias safe operating area**
**==> picture [181 x 164] intentionally omitted <==**
**Figure 11: Diode VF vs. forward current**
**==> picture [174 x 166] intentionally omitted <==**
**Figure 13: Normalized V(BR)CES vs. junction temperature**
**==> picture [204 x 178] intentionally omitted <==**
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## **Electrical characteristics**
**Figure 14: Capacitance variations**
**==> picture [184 x 165] intentionally omitted <==**
**Figure 15: Gate charge vs. gate-emitter voltage**
**==> picture [186 x 164] intentionally omitted <==**
**Figure 16: Switching energy vs. collector current**
**==> picture [181 x 165] intentionally omitted <==**
**Figure 17: Switching energy vs. gate resistance**
**==> picture [181 x 165] intentionally omitted <==**
**Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage**
**==> picture [185 x 165] intentionally omitted <==**
**==> picture [183 x 165] intentionally omitted <==**
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**Electrical characteristics**
**Figure 20: Switching times vs. collector current**
**==> picture [174 x 163] intentionally omitted <==**
**Figure 22: Reverse recovery current vs. diode current slope**
**==> picture [180 x 165] intentionally omitted <==**
**Figure 24: Reverse recovery charge vs. diode current slope**
**==> picture [180 x 166] intentionally omitted <==**
**Figure 21: Switching times vs. gate resistance**
**==> picture [178 x 163] intentionally omitted <==**
**Figure 23: Reverse recovery time vs. diode current slope**
**==> picture [183 x 165] intentionally omitted <==**
**Figure 25: Reverse recovery energy vs. diode current slope**
**==> picture [183 x 166] intentionally omitted <==**
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**Electrical characteristics**
**Figure 26: Thermal impedance for IGBT**
**==> picture [213 x 213] intentionally omitted <==**
**Figure 27: Thermal impedance for diode**
**==> picture [219 x 213] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**==> picture [429 x 186] intentionally omitted <==**
**----- Start of picture text -----**
Figure 28: Test circuit for inductive load Figure 29: Gate charge test circuit
switching
**----- End of picture text -----**
**Figure 30: Switching waveform Figure 31: Diode reverse recovery waveform**
**==> picture [160 x 78] intentionally omitted <==**
**==> picture [209 x 127] intentionally omitted <==**
**----- Start of picture text -----**
di/dt Qrr
IF ts trr tf
IRRM t
10%
IRRM
VRRM
dv/dt
AM01507v1
**----- End of picture text -----**
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**STGW60H65DFB-4**
**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO247-4 package information**
**Figure 32: TO247-4 package outline**
**==> picture [407 x 481] intentionally omitted <==**
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**Package information**
**Table 8: TO247-4 mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.29|
|b1|1.15|1.20|1.25|
|b2|0||0.20|
|c|0.59||0.66|
|c1|0.58|0.60|0.62|
|D|20.90|21.00|21.10|
|D1|16.25|16.55|16.85|
|D2|1.05|1.20|1.35|
|D3|24.97|25.12|25.27|
|E|15.70|15.80|15.90|
|E1|13.10|13.30|13.50|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|2.44|2.54|2.64|
|e1|4.98|5.08|5.18|
|L|19.80|19.92|20.10|
|P|3.50|3.60|3.70|
|P1|||7.40|
|P2|2.40|2.50|2.60|
|Q|5.60||6.00|
|S||6.15||
|T|9.80||10.20|
|U|6.00||6.40|
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**STGW60H65DFB-4**
**Revision history**
## **5 Revision history**
**Table 9: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|30-May-2016|1|First release|
|21-Mar-2017|2|Updated_Table 2: "Absolute maximum ratings"_and_Table 6: "IGBT_
_switching characteristics (inductive load)"_.
Updated_Section 2.1: "Electrical characteristics (curves)"_.
Minor text changes|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
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