# IGBT, 80 A, 1.6 V, 375 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3366990/)

**URL**: https://novapart.co/products/STGW60H60DLFB/igbt-80-a-16-v-375-w-600-to-247-3-pins
**SKU**: STGW60H60DLFB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.8500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Product Range | 650V HB |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3366990/)

## **STGW60H60DLFB STGWT60H60DLFB** Trench gate field-stop IGBT, HB series 600 V, 60 A high speed 

**Datasheet** - **production data** 

## **Features** 

**==> picture [207 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>3<br>1<br>2<br>2 eo 1<br>TO-247 TO-3P<br>**----- End of picture text -----**<br>


- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- VCE(sat) = 1.6 V (typ.) @ IC = 60 A 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

- Low VF soft recovery co-packaged diode 

- Lead free package 

## **Figure 1. Internal schematic diagram** 

## **Applications** 

- Induction heating 

**==> picture [95 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (2 or TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


- Microwave oven 

- Resonant converters 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW60H60DLFB|GW60H60DLFB|TO-247|Tube|
|STGWT60H60DLFB|GWT60H60DLFB|TO-3P|Tube|



February 2014 

DocID024403 Rev 3 

1/17 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STGW60H60DLFB, STGWT60H60DLFB**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



2/17 

DocID024403 Rev 3 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|600<br>~~ee~~|V<br>~~ee~~|
|IC|Continuous collector current at TC= 25 °C|80(1)|A<br>~~—~~|
|IC<br>~~a~~<br>~~ee~~|Continuous collector current at TC= 100 °C<br>~~ee~~|60|A<br>~~ee~~<br>~~—~~|
|ICP<br>(2)<br>~~ee~~|Pulsed collector current<br>~~ee~~|240<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~—~~|
|VGE<br>~~ee~~|Gate-emitter voltage<br>~~ee~~|±20|V<br>~~ee~~<br>~~—~~|
|IF<br>~~a~~<br>~~a~~|Continuous forward current at TC= 25 °C|80(1)|A<br>~~ee~~|
|IF<br>~~a~~|Continuous forward current at TC= 100 °C|60<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|IFP<br>(2)<br>~~a~~|Pulsed forward current|240|A<br>~~ee~~<br>~~—~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|375|W|
|TSTG<br>~~a~~<br>~~a~~|Storage temperature range|- 55 to 150|°C<br>~~ee~~|
|TJ<br>~~a~~|Operating junction temperature|- 55 to 175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



1. Current level is limited by bond wires 

2. Pulse width limited by maximum junction temperature 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistance junction-case IGBT|0.4|°C/W|
|RthJC|Thermal resistance junction-case diode|1.47|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



DocID024403 Rev 3 

3/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

|||~~a~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|V(BR)CES<br>~~ee~~<br>~~|)~~|Collector-emitter<br>breakdown voltage<br>(VGE= 0)<br>~~ee~~<br>~~|)~~|IC= 2 mA<br>~~ee~~<br>~~a~~<br>|600<br>~~ee~~<br>~~e~~~~**e**~~<br>|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|VCE(sat)<br>~~|)~~|Collector-emitter saturation<br>voltage<br>~~ee~~<br>~~|) ~~<br>~~UE~~|VGE= 15 V, IC= 60 A<br>~~a~~<br>~~ee~~<br>~~Fr~~|~~ee~~<br>~~e~~~~**e**~~<br>~~Fr~~|1.6<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~UE~~<br>~~eee~~|
|||VGE= 15 V, IC= 60 A<br>TJ= 125 °C<br>~~Fr~~|~~e~~~~**e**~~<br>~~Fr~~|1.75<br>~~ee~~|~~ee~~||
|||VGE= 15 V, IC= 60 A<br>TJ= 175 °C<br> ~~Fr~~<br>~~UE~~|~~e~~~~**e**~~<br>~~Fr~~<br>~~UE~~<br>~~ee~~|1.85<br>~~ee~~<br>~~UE~~<br>~~eee~~|~~ee~~<br>~~UE~~<br>~~eee~~||
|VF<br>~~|)~~<br>~~ee~~|Forward on-voltage<br>~~|) ~~<br>~~ee~~<br>~~ee~~<br>~~esees~~|IF= 60 A<br> <br>~~ee~~|~~e~~~~**e** ~~<br><br>~~ee~~<br>~~ee~~|1.8<br> ~~ee~~<br>~~ee~~<br>~~eee~~|2.1<br>~~ee~~<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ees~~|
|||IF= 60 A TJ= 125 °C|~~ee ~~<br>~~**e**~~|1.55<br> ~~eee~~<br>~~**e**e~~|~~eee~~<br>~~ee~~||
|||IF= 60 A TJ= 175 °C<br>~~ee~~<br>~~ees~~|~~ee~~<br>~~**e**~~<br>~~ees~~<br>~~e~~|1.5<br>~~ee~~<br>~~**e**e~~<br>~~ees~~<br>~~Ge~~|~~ee~~<br>~~ee~~<br>~~ees~~<br>~~ee~~||
|VGE(th)<br>~~ee~~|Gate threshold voltage<br>~~esees~~|VCE= VGE, IC= 1 mA<br>~~ees~~|5<br>~~**e**~~<br>~~ees~~<br>~~e~~|6<br>~~**e**e~~<br>~~ees~~<br>~~Ge~~|7<br>~~ee~~<br>~~ees~~<br>~~ee~~|V<br>~~ee~~<br>~~ees~~|
|ICES<br>~~ee~~<br>~~a~~|Collector cut-off current<br>(VGE= 0)<br>~~esees~~<br>~~a~~|VCE= 600 V<br>~~ees~~<br>~~a~~|~~**e**~~<br>~~ees~~<br>~~e ~~<br>~~a~~|~~**e**e ~~<br>~~ees~~<br> ~~Ge ~~<br>~~a~~|25<br> ~~ee~~<br>~~ees~~<br> ~~ee~~<br>~~a~~|µA<br>~~ee~~<br>~~ees~~<br>~~a~~|
|IGES<br>~~ee~~|Gate-emitter leakage<br>current (VCE= 0)<br>~~ee~~|VGE= ± 20 V<br>~~ee~~|~~ee~~|~~ee~~|250<br>~~ee~~|nA<br>~~ee~~|



## **Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|7792|-|pF|
|Coes|Output capacitance||-|262|-|pF|
|Cres|Reverse transfer<br>capacitance||-|158|-|pF|
|Qg|Total gate charge|VCC= 480 V, IC= 60 A,<br>VGE= 15 V, see_Figure 27_|-|306|-|nC|
|Qge|Gate-emitter charge||-|126|-|nC|
|Qgc|Gate-collector charge||-|58|-|nC|



4/17 

DocID024403 Rev 3 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit** td(off) Turn-off delay time VCE = 400 V, IC = 60 A, 160 ns tf Current fall time RG = 5 Ω , VGE = 15 V, see - 18 - ns Eoff(1) Turn-off switching losses _Figure 25_ - 626 - µJ td(off) Turn-off delay time VCE = 400 V, IC = 60 A, 184 ns tf Current fall time RG = 5 Ω , VGE = 15 V, - 117 - ns Eoff(1) Turn-off switching losses TJ = 175 °C, see _Figure 25_ - 1017 - µJ ~~==~~ 1. Turn-off losses include also the tail of the collector current. **Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions Min. Typ. Max. Unit** VCC = 320 V, RG = 10 Ω , IC = 60 A, L = 100 µH, - 450 - Csnub = 20 nF, see _Figure 26_ Eoff(1) Turn-off switching losses VCC = 320 V, RG = 10 Ω , µJ IC = 60 A, L = 100 µH, - 785 - Csnub = 20 nF, TJ = 175 °C, see _Figure 26_ ~~ioe~~ 1. Turn-off losses include also the tail of the collector current. 

DocID024403 Rev 3 

5/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**==> picture [459 x 426] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.1  Electrical characteristics (curves)<br>Figure 2. Power dissipation vs. case  Figure 3. Collector current vs. case temperature<br>temperature<br>Ptot GIPD021020131435FSR IC GIPD021020131439FSR<br>(W) (A)<br>350 80<br>70<br>300<br>60<br>250<br>50<br>200<br>40<br>150<br>30<br>100<br>20<br>VGE ≥ 15V, TJ ≤ 175 °C<br>50 10<br>0 0<br>INU 0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C)<br>Figure 4. Output characteristics (TJ = 25°C) Figure 5. Output characteristics (TJ = 175°C)<br>IC GIPD021020131443FSR IC GIPD021020131448FSR<br>(A) (A)<br>VGE=15V 11V VGE=15V 11V<br>200 200<br>150 150<br>100 100 9V<br>9V<br>50 50<br>7V<br>0 0<br>0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 6. VCE(sat) vs. junction temperature** 

**Figure 7. VCE(sat) vs. collector current** 

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**----- Start of picture text -----**<br>
VCE(sat) GIPD021020131457FSR VCE(sat) GIPD021020131500FSR<br>(V) (V)<br>TJ= 175°C<br>2.6 VGE= 15V 2.4 V GE = 15V<br>IC= 120A<br>2.2<br>2.4<br>T J = 25°C<br>2<br>2.2<br>1.8<br>2 IC= 60A<br>C 1.6<br>1.8 TJ= -40°C<br>1.4<br>1.6 IC= 30A<br>1.2<br>1.4 1.0<br>1.2 0.8<br>-50 0 50 100 150 TJ(°C) 0 20 40 60 80 100 120 IC(A)<br>**----- End of picture text -----**<br>


DocID024403 Rev 3 

6/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 9. Forward bias safe operating area** 

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**----- Start of picture text -----**<br>
GIPD021020131506FSR GIPD021020131512FSR<br>IC IC<br>(A) (A)<br>120<br>TC= 80°C 100<br>100<br>80 TC= 100°C 10 μs<br>10<br>100 μs<br>60<br>1 ms<br>40 Single pulse<br>1<br>Tc= 25°C, TJ<= 175°C<br>Rectangular current shape VC GE [= 25°C, ] = 15V<br>20 (duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,<br>VGE = 0/15 V, TJ = 175 °C)<br>0 1 10 f(kHz) 0.11 10 100 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 10. Transfer characteristics** 

**Figure 11. Diode VF vs. forward current** 

**==> picture [424 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC GIPD021020131522FSR VF GIPD021020131534FSR<br>(A) (V) TJ= -40°C<br>PF | tT |<br>VCE=10V<br>200 2.4 Pe<br>-40°C TJ= 25°C<br>150 // 2 PoenOMSK<br>TJ=175 ° C<br>AA<br>100 1.6 SAA |<br>50 1.2<br>TJ= 175°CJ<br>25°C<br>0 VA Aeyy EEeee<br>7 9 11 13 VGE(V) 0.820 40 60 80 100 120 IF(A)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized VGE(th) vs junction temperature** 

**Figure 13. Normalized V(BR)CES vs. junction temperature** 

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**----- Start of picture text -----**<br>
VGE(th) GIPD021020131540FSR V(BR)CES GIPD021020131546FSR<br>(norm) (norm)<br>1.1 IC= 1mA<br>VCE= VGE 1.1<br>IC= 2mA<br>1.0<br>0.9<br>1.0<br>0.8<br>0.7<br>0.6-50 0 50 100 150 TJ(°C) 0.9-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


DocID024403 Rev 3 

7/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**==> picture [459 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage<br>C GIPD021020131619FSR VGE GIPD021020131623FSR<br>(pF) (V)<br>10000<br>Cies 16<br>IC= 60A<br>14<br>IGE= 1mA<br>VCC= 520V<br>12<br>1000<br>10<br>8<br>Coes<br>6<br>100<br>Cres<br>4<br>2<br>10 0<br>Fal 0.1 1 10 VCE(V) 0 100 200 300 Qg(nC)<br>Figure 16. Switching-off loss vs collector  Figure 17. Switching-off loss vs gate resistance<br>current<br>E GIPD021020131627FSR E GIPD021020131631FSR<br>(μJ) (μJ)<br>VCC = 400V, VGE = 15V,<br>3000 RG = 10Ω, TJ = 175°C V CC  = 400 V, V GE  = 15 V,<br>IC = 60 A, TJ = 175 °C<br>2000<br>2500<br>2000<br>1500<br>1500 EOFF EOFF<br>1000<br>1000<br>500<br>0 500<br>0 20 40 60 80 100 120 IC(A) 2 6 10 14 18 22 RG(Ω)<br>Figure 18. Switching-off loss vs temperature Figure 19. Switching-off loss vs collector-<br>emitter voltage<br>E GIPD021020131634FSR E GIPD041020131010FSR<br>(μJ) VCC= 400V, VGE= 15V,  1700(μJ) TJ= 175°C, VGE= 15V,<br>RG= 10Ω, IC= 60A RG= 10Ω, IC= 60A<br>2100<br>1400<br>1100<br>EOFF 1100 EOFF<br>1000<br>800<br>900<br>800 500<br>EAI] 25 50 75 100 125 150 TJ(°C) 100 200 300 400 500 VCE(V)<br>8/17 DocID024403 Rev 3<br>**----- End of picture text -----**<br>


**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**Figure 20. Switching times vs. collector current** 

**==> picture [186 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD021020131641FSR<br>t<br>(ns)<br>tdoff<br>100<br>t f<br>10<br>TJ= 175°C, VGE= 15V,<br>RG= 10Ω, VCC= 400V<br>1<br>0 40 80 120 160 IC(A)<br>**----- End of picture text -----**<br>


## **Figure 21. Switching times vs. gate resistance** 

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**----- Start of picture text -----**<br>
GIPD021020131653FSR<br>t<br>(ns)<br>TJ= 175°C, VGE= 15V,<br>IC= 60A, VCC= 400V<br>tdoff<br>100<br>tf<br>10<br>2 6 10 14 18 22 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 22. Switching-off losses vs. capacitive load** 

**==> picture [185 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
E GIPD021020131657FSR<br>(μJ)<br>900 Rg= 10Ω, VGE= 15V,<br>IC= 60A, VCC= 320V,<br>800 Lsnub= 0.1mH<br>700<br>600<br>TJ= 175°C<br>500<br>400<br>TJ= 25°C<br>300<br>200<br>100<br>0 20 40 60 80 100 Csnub(nF)<br>**----- End of picture text -----**<br>


DocID024403 Rev 3 

9/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Electrical characteristics** 

**==> picture [188 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. Thermal impedance for IGBT<br>**----- End of picture text -----**<br>


**==> picture [314 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthTO2T_A<br>K<br>d=0.5<br>= ASRSHe}=tp tt tt tt oecr th<br>ee 0 |<br>eA |<br>o_O<br>0.2<br>ap meee? MR<br>teAEE<br>0.1<br>TE-ty<br>-1 LA<br>10 amlAl<br>OH 0.05 H HH<br>Ann) 7AM Tt Zi=k Ry. Fl<br>ee 96) Hl<br>0.02<br>Sere 6= tp /T ll<br>AAA Bal ll<br>a 0.01 |<br>iin lll JUL |<br>Single pulse T<br>10-2 um cull [abel |<br>10-5 10-4 10-3 10-2 10-1 tp [ (s)]<br>**----- End of picture text -----**<br>


**Figure 24. Thermal impedance for diode** 

10/17 

DocID024403 Rev 3 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Test circuits** 

## **3 Test circuits** 

**Figure 25. Test circuit for inductive load Figure 26. Test circuit for capacitive load switching switching** ~~A A A OA~~ Cc Cc o | ~~L~~ =100ube ~~H~~ o IX ~~L~~ -=100y ~~H E~~ B 3 ~~.~~ 3 1000 ~~E~~ B 3 ~~.~~ 3 | 1000 B C EF ELF Veo B C van ELF Vec Go \K. AD.U.T. co \K. AD.U.T. Csnub + Ro ~~E~~ + Ro ~~E~~ AM01504v1 AM17096v1 

## **Figure 27. Gate charge test circuit** 

**Figure 28. Switching waveform** 

**==> picture [263 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee 90%<br>K a VG f =o ~~ i H N 10%<br>| ————~, _ 90%<br>VCE Tr(Voff) 10%<br>Tcross<br>|| |; f j<br>| es on 90%<br>V IC Td(on)Ton | Tr(Ion) | Td(offToff) 4 Tf 10%<br>Ve ._— ~ -- eae<i<br>AM01505v1 AM01506v1<br>**----- End of picture text -----**<br>


## **Figure 29. Diode recovery time waveform** 

**==> picture [197 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
di/dt Qrr<br>IF trr Z L<br>ta Z| tb<br>IRRM ’” Gi z IRRM t<br>Gi| 25%<br>VF<br>dv/dt<br>AM01507v1<br>**----- End of picture text -----**<br>


DocID024403 Rev 3 

11/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 30. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


12/17 DocID024403 Rev 3 ~~Le~~ 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Package mechanical data** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



DocID024403 Rev 3 

13/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Package mechanical data** 

## **Figure 31. TO-3P drawing** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_A<br>**----- End of picture text -----**<br>


14/17 

DocID024403 Rev 3 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Package mechanical data** 

**Table 9. TO-3P mechanical data** 

||**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.60|~~ee ~~|5<br> ~~ee~~|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1|1.20|
|b1<br>~~a~~|1.80||2.20|
|b2<br>~~a~~<br>~~es~~|2.80||3.20|
|c<br>~~es~~|0.55|0.60|0.75|
|D<br>~~es~~<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~||13.90||
|E<br>~~a~~|15.40||15.80|
|E1<br>~~a~~||13.60||
|E2<br>~~a~~<br>~~es~~||9.60||
|e<br>~~es~~|5.15|5.45|5.75|
|L<br>~~es~~<br>~~a~~|19.50|20|20.50|
|L1<br>~~a~~||3.50||
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~|3.10||3.30|
|Q<br>~~a~~<br>~~es~~||5||
|Q1<br>~~es~~||3.80||



DocID024403 Rev 3 

15/17 

**STGW60H60DLFB, STGWT60H60DLFB** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Apr-2013|1|Initial release.|
|04-Oct-2013|2|Document status changed from preliminary to production data.<br>Added_Section 2.1: Electrical characteristics (curves)_.<br>Minor text changes.|
|24-Feb-2014|3|Updated title and description in cover page.|



16/17 

DocID024403 Rev 3 

**STGW60H60DLFB, STGWT60H60DLFB** 

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DocID024403 Rev 3 

17/17 



## Links

- [View this product on Novapart](https://novapart.co/products/STGW60H60DLFB/igbt-80-a-16-v-375-w-600-to-247-3-pins)
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw60h60dlfb/igbt-600v-80a-175deg-c-375w/dp/3366990)
---

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