# IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2470028/)

**URL**: https://novapart.co/products/STGW40M120DF3/igbt-80-a-185-v-468-w-12-kv-to-247-3-pins
**SKU**: STGW40M120DF3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.3800
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 468W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2470028/)

**STGW40M120DF3 STGWA40M120DF3** Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 

**Datasheet** - **production data** 

## **Features** 

- 10 µs of short-circuit withstand time 

- VCE(sat) = 1.85 V (typ.) @ IC = 40 A 

- Tight parameters distribution 

- Safer paralleling 

- Low thermal resistance 

- Soft and fast recovery antiparallel diode 

## **Applications** 

- Industrial drives 

- UPS 

- Solar 

## **Figure 1.Internal schematic diagram** 

- Welding 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW40M120DF3|G40M120DF3|TO-247|Tube|
|STGWA40M120DF3|G40M120DF3|TO-247 long leads|Tube|



November 2014 

DocID026224 Rev 3 

1/18 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STGW40M120DF3, STGWA40M120DF3** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
||4.1<br>TO-247, STGW40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.2<br>TO-247 long leads, STGWA40M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



2/18 

DocID026224 Rev 3 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|1200<br>~~ee~~|V<br>~~ee~~|
|IC|Continuous collector current at TC= 25 °C|80|A<br>~~—~~|
|IC<br>~~a~~<br>~~ee~~|Continuous collector current at TC= 100 °C<br>~~ee~~|40|A<br>~~ee~~<br>~~—~~|
|ICP<br>(1)<br>~~ee~~|Pulsed collector current<br>~~ee~~|160<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~—~~|
|VGE<br>~~ee~~|Gate-emitter voltage<br>~~ee~~|±20|V<br>~~ee~~<br>~~—~~|
|IF<br>~~a~~<br>~~a~~|Continuous forward current at TC= 25 °C|80|A<br>~~ee~~|
|IF<br>~~a~~|Continuous forward current at TC= 100 °C|40<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|IFP<br>(1)<br>~~a~~|Pulsed forward current|160|A<br>~~ee~~<br>~~—~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|468|W|
|TSTG<br>~~a~~<br>~~a~~|Storage temperature range|- 55 to 150|°C<br>~~ee~~|
|TJ<br>~~a~~|Operating junction temperature|- 55 to 175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



1. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.32|°C/W|
|RthJC|Thermal resistance junction-case diode|0.74|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



DocID026224 Rev 3 

3/18 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

|||~~a~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|V(BR)CES<br>~~ee~~<br>~~|)~~|Collector-emitter<br>breakdown voltage<br>(VGE= 0)<br>~~ee~~<br>~~|)~~|IC= 2 mA<br>~~ee~~<br>~~a~~<br>|1200<br>~~ee~~<br>~~e~~~~**e**~~<br>|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|VCE(sat)<br>~~|)~~<br>~~Pp~~|Collector-emitter saturation<br>voltage<br>~~ee~~<br>~~|) ~~<br>~~UE~~<br>~~Pp~~|VGE= 15 V, IC= 40 A<br>~~a~~<br>~~ee~~<br>~~Fr~~|~~ee~~<br>~~e~~~~**e**~~<br>~~Fr~~|1.85<br>~~ee~~<br>~~ee~~|2.3<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~UE~~<br>~~ee~~|
|||VGE= 15 V, IC= 40 A,<br>TJ= 125 °C<br>~~Fr~~|~~e~~~~**e**~~<br>~~Fr~~|2.2<br>~~ee~~|~~ee~~||
|||VGE= 15 V, IC= 40 A<br>TJ= 175 °C<br> ~~Fr~~<br>~~UE~~|~~e~~~~**e**~~<br>~~Fr~~<br>~~UE~~<br>~~ee~~|2.3<br>~~ee~~<br>~~UE~~<br>~~ee~~|~~ee~~<br>~~UE~~<br>~~ee~~||
|VF<br>~~|)~~<br>~~Pp~~<br>~~ee~~|Forward on-voltage<br>~~|) ~~<br>~~ee~~<br>~~Pp~~<br>~~es~~<br>~~esees~~|IF= 40 A<br> <br>~~ee~~<br>~~err~~|~~e~~~~**e** ~~<br><br>~~ee~~<br>~~ee~~<br>~~err~~|2.85<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|3.95<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~err~~|
|||IF= 40 A TJ= 125 °C<br>~~err~~|~~ee~~<br>~~err~~<br>~~**ee**~~|2.25<br>~~ee~~<br>~~err~~<br>~~ee~~|~~ee~~<br>~~err~~<br>~~e~~~~**e**~~|V<br>~~ee~~<br>~~err~~<br>~~ee~~|
|||IF= 40 A TJ= 175 °C<br>~~err~~<br>~~es~~<br>~~ees~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~**ee**~~<br>~~ees~~|2.1<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|~~ee~~<br>~~err~~<br>~~es~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~err~~<br>~~es~~<br>~~ee~~<br>~~ees~~|
|VGE(th)<br>~~Pp~~<br>~~ee~~|Gate threshold voltage<br>~~Pp~~<br>~~esees~~|VCE= VGE, IC= 2 mA<br>~~ees~~|5<br>~~ee ~~<br>~~**ee**~~<br>~~ees~~|6<br> ~~ee ~~<br>~~ee~~<br>~~ees~~<br>~~Ge~~|7<br> ~~ee~~<br>~~e~~~~**e**~~<br>~~ees~~<br>~~e~~|V<br>~~ee~~<br>~~ee~~<br>~~ees~~|
|ICES<br>~~ee~~<br>~~a~~|Collector cut-off current<br>(VGE= 0)<br>~~esees~~<br>~~a~~|VCE= 1200 V<br>~~ees~~<br>~~a~~|~~**ee** ~~<br>~~ees~~<br>~~a~~|~~ee ~~<br>~~ees~~<br>~~Ge ~~<br>~~a~~|25<br> ~~e~~~~**e** ~~<br>~~ees~~<br> ~~e~~<br>~~a~~|µA<br> ~~ee~~<br>~~ees~~<br>~~a~~|
|IGES<br>~~ee~~|Gate-emitter leakage<br>current (VCE= 0)<br>~~ee~~|VGE= ± 20 V<br>~~ee~~|~~ee~~|~~ee~~|250<br>~~ee~~|nA<br>~~ee~~|



## **Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|2500|-|pF|
|Coes|Output capacitance||-|275|-|pF|
|Cres|Reverse transfer<br>capacitance||-|95|-|pF|
|Qg|Total gate charge|VCC= 960 V, IC=40 A,<br>VGE= 15 V, see_Figure 30_|-|125|-|nC|
|Qge|Gate-emitter charge||-|15|-|nC|
|Qgc|Gate-collector charge||-|75|-|nC|



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DocID026224 Rev 3 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load)** 

|**Symbol**<br>~~ee~~<br>~~es~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Typ.**<br>~~ee~~<br>~~ee ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|td(on)<br>~~es~~<br>~~—————~~|Turn-on delay time<br>~~—————~~|VCE= 600 V, IC= 40 A,<br>VGE= 15 V_,_RG= 10Ω<br>_seeFigure 29_<br>~~ee ~~|-<br>~~ee~~<br>~~TT~~|35<br>~~ee ee~~<br>~~TT~~|-<br>~~ee~~<br>~~TT~~|ns<br>~~ee~~<br>~~TT~~|
|tr<br>~~es~~<br>~~—————~~<br>~~————~~|Current rise time<br>~~—————~~<br>~~————~~||-<br> ~~ee~~<br>~~TT~~<br>~~=~~|15<br>~~ee ee~~<br>~~TT~~<br>~~=~~|-<br>~~ee~~<br>~~TT~~<br>~~=~~|ns<br>~~ee~~<br>~~TT~~<br>~~=~~|
|(di/dt)on<br>~~—————~~<br>~~————~~<br>~~————~~|Turn-on current slope<br>~~—————~~<br>~~————~~<br>~~————~~||-<br>~~TT~~<br>~~=~~<br>~~ea~~|2100<br>~~TT~~<br>~~=~~<br>~~ea~~|-<br>~~TT~~<br>~~=~~<br>~~ea~~|A/µs<br>~~TT~~<br>~~=~~<br>~~ea~~|
|td(off)<br>~~————~~<br>~~————~~<br>~~————~~|Turn-off delay time<br>~~————~~<br>~~————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~<br>~~ea~~|140<br>~~=~~<br>~~ea~~<br>~~ea~~|-<br>~~=~~<br>~~ea~~<br>~~ea~~|ns<br>~~=~~<br>~~ea~~<br>~~ea~~|
|tf<br>~~————~~<br>~~————~~<br>~~ee~~|Current fall time<br>~~————~~<br>~~————~~||-<br>~~ea~~<br>~~ea~~<br>~~Tee~~|135<br>~~ea~~<br>~~ea~~<br>~~Tee~~|-<br>~~ea~~<br>~~ea~~<br>~~Tee~~|ns<br>~~ea~~<br>~~ea~~<br>~~Tee~~|
|Eon<br>(1)<br>~~————~~<br>~~ee~~<br>~~ee~~|Turn-on switching losses<br>~~————~~||-<br>~~ea~~<br>~~Tee~~|1.5<br>~~ea~~<br>~~Tee~~|-<br>~~ea~~<br>~~Tee~~|mJ<br>~~ea~~<br>~~Tee~~|
|Eoff<br>(2)<br>~~ee~~<br>~~ee~~<br>~~—————~~|Turn-off switching losses<br>~~—————~~||-<br>~~Tee~~<br>~~=~~|2.25<br>~~Tee~~<br>~~=~~|-<br>~~Tee~~<br>~~=~~|mJ<br>~~Tee~~<br>~~=~~|
|Ets<br>~~ee~~<br>~~—————~~<br>~~————~~|Total switching losses<br>~~—————~~<br>~~————~~||-<br>~~=~~<br>~~Te~~|3.75<br>~~=~~<br>~~Te~~|-<br>~~=~~<br>~~Te~~|mJ<br>~~=~~<br>~~Te~~|
|td(on)<br>~~—————~~<br>~~————~~<br>~~————~~|Turn-on delay time<br>~~—————~~<br>~~————~~<br>~~————~~|VCE= 600 V, IC= 40 A,<br>RG= 10Ω, VGE= 15 V_,_<br>TJ= 175 °C, see_Figure 29_|-<br>~~=~~<br>~~Te~~<br>~~ea~~|35<br>~~=~~<br>~~Te~~<br>~~ea~~|-<br>~~=~~<br>~~Te~~<br>~~ea~~|ns<br>~~=~~<br>~~Te~~<br>~~ea~~|
|tr<br>~~————~~<br>~~————~~<br>~~————~~|Current rise time<br>~~————~~<br>~~————~~<br>~~————~~||-<br>~~Te~~<br>~~ea~~<br>~~ea~~|18<br>~~Te~~<br>~~ea~~<br>~~ea~~|-<br>~~Te~~<br>~~ea~~<br>~~ea~~|ns<br>~~Te~~<br>~~ea~~<br>~~ea~~|
|(di/dt)on<br>~~————~~<br>~~————~~<br>~~ee~~|Turn-on current slope<br>~~————~~<br>~~————~~||-<br>~~ea~~<br>~~ea~~|1800<br>~~ea~~<br>~~ea~~|-<br>~~ea~~<br>~~ea~~|A/µs<br>~~ea~~<br>~~ea~~|
|td(off)<br>~~————~~<br>~~ee~~<br>~~ee~~|Turn-off delay time<br>~~————~~||-<br>~~ea~~|150<br>~~ea~~|-<br>~~ea~~|ns<br>~~ea~~|
|tf<br>~~ee~~<br>~~ee~~<br>~~—————~~|Current fall time<br>~~—————~~||-<br>~~=~~|240<br>~~=~~|-<br>~~=~~|ns<br>~~=~~|
|Eon<br>(1)<br>~~ee~~<br>~~—————~~<br>~~————~~|Turn-on switching losses<br>~~—————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~|2.8<br>~~=~~<br>~~ea~~|-<br>~~=~~<br>~~ea~~|mJ<br>~~=~~<br>~~ea~~|
|Eoff<br>(2)<br>~~—————~~<br>~~————~~<br>~~————~~|Turn-off switching losses<br>~~—————~~<br>~~————~~<br>~~————~~||-<br>~~=~~<br>~~ea~~<br>~~ea~~|3.45<br>~~=~~<br>~~ea~~<br>~~ea~~|-<br>~~=~~<br>~~ea~~<br>~~ea~~|mJ<br>~~=~~<br>~~ea~~<br>~~ea~~|
|Ets<br>~~————~~<br>~~————~~|Total switching losses<br>~~————~~<br>~~————~~||-<br>~~ea~~<br>~~ea~~|6.25<br>~~ea~~<br>~~ea~~|-<br>~~ea~~<br>~~ea~~|mJ<br>~~ea~~<br>~~ea~~|
|tsc<br>~~————~~<br>~~a~~|Short-circuit withstand time<br>~~————~~<br>~~a~~|VCC ≤ 600V, VGE= 15V,<br>TJstart= 150°C<br>~~ee~~|10<br>~~ea~~<br>~~ee~~|~~ea~~<br>~~ee~~|-<br>~~ea~~<br>~~ee~~|µs<br>~~ea~~<br>~~ee~~|



**Table 7. Diode switching characteristics (inductive load)** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~eee~~|**Min.**<br>~~eee~~|**Typ.**<br>~~eee~~|**Max.**<br>~~eee~~|**Unit**<br>~~eee~~|
|---|---|---|---|---|---|---|
|trr<br>~~ee~~<br>~~a~~|Reverse recovery time<br>~~ee~~|IF= 40 A, VR= 600 V,<br>VGE= 15 V, see_Figure 29_<br>di/dt = 1000 A/µs<br>~~eee~~<br>~~TT~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~Ee~~<br>~~ptt~~<br>~~=~~<br>~~=~~|-<br>~~eee~~<br>~~TT~~|355<br>~~eee~~<br>~~TT~~|-<br>~~eee~~<br>~~TT~~|ns<br>~~eee~~<br>~~TT~~|
|Qrr<br>~~a~~|Reverse recovery charge<br>~~a~~||-<br>~~a~~<br>~~a~~|2575<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|
|Irrm<br>~~a~~|Reverse recovery current<br>~~a~~||-<br>~~a~~<br>~~Ee~~|25<br>~~a~~<br>~~Ee~~|-<br>~~a~~<br>~~Ee~~|A<br>~~a~~<br>~~Ee~~|
|dIrr//dt<br>~~PP~~<br>~~es~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~PP~~||-<br>~~ptt~~<br>~~=~~|1110<br>~~ptt~~<br>~~=~~|-<br>~~ptt~~<br>~~=~~|A/µs<br>~~ptt~~<br>~~=~~|
|Err<br>~~es~~<br>~~es~~|Reverse recovery energy||-<br>~~=~~<br>~~=~~|1.12<br>~~=~~<br>~~=~~|-<br>~~=~~<br>~~=~~|mJ<br>~~=~~<br>~~=~~|
|trr<br>~~es~~<br>~~es~~|Reverse recovery time|IF= 40 A, VR= 600 V,<br>VGE= 15 V, TJ= 175 °C,<br>see_Figure 29_<br>di/dt = 1000 A/µs<br>~~=~~<br>~~=~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~Ee~~<br>~~ptt~~<br>~~i~~|-<br>~~=~~<br>~~=~~|667<br>~~=~~<br>~~=~~|-<br>~~=~~<br>~~=~~|ns<br>~~=~~<br>~~=~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse recovery charge<br>~~a~~||-<br>~~=~~<br>~~a~~<br>~~a~~|8500<br>~~=~~<br>~~a~~<br>~~a~~|-<br>~~=~~<br>~~a~~<br>~~a~~|nC<br>~~=~~<br>~~a~~<br>~~a~~|
|Irrm<br>~~a~~|Reverse recovery current<br>~~a~~||-<br>~~a~~<br>~~Ee~~|37<br>~~a~~<br>~~Ee~~|-<br>~~a~~<br>~~Ee~~|A<br>~~a~~<br>~~Ee~~|
|dIrr//dt<br>~~PP~~<br>~~es~~|Peak rate of fall of reverse<br>recovery current during tb<br>~~PP~~||-<br>~~ptt~~<br>~~i~~|450<br>~~ptt~~<br>~~i~~|-<br>~~ptt~~<br>~~i~~|A/µs<br>~~ptt~~<br>~~i~~|
|Err<br>~~es~~|Reverse recovery energy||-<br>~~i~~|3.9<br>~~i~~|-<br>~~i~~|mJ<br>~~i~~|



DocID026224 Rev 3 5/18 ~~Be~~ 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

**Figure 4. Output characteristics (TJ = 25°C)** 

## **Figure 5. Output characteristics (TJ = 175°C)** 

**Figure 6. VCE(sat) vs. junction temperature** 

**Figure 7. VCE(sat) vs. collector current** 

DocID026224 Rev 3 

6/18 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 10. Transfer characteristics** 

**Figure 12. Normalized VGE(th) vs junction temperature** 

**Figure 9. Forward bias safe operating area** 

**Figure 11. Diode VF vs. forward current** 

**Figure 13. Normalized V(BR)CES vs. junction temperature** 

DocID026224 Rev 3 

7/18 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

**Figure 14. Capacitance variation** 

**Figure 16. Switching loss vs collector current** 

**Figure 18. Switching loss vs temperature** 

## **Figure 15. Gate charge vs. gate-emitter voltage** 

**Figure 17. Switching loss vs gate resistance** 

**Figure 19. Switching loss vs collector-emitter voltage** 

8/18 

DocID026224 Rev 3 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

**Figure 20. Short circuit time and current vs VGE Figure 21. Switching times vs collector current** 

**Figure 22. Switching times vs. gate resistance** 

**Figure 23.  Reverse recovery current vs. diode current slope** 

**Figure 24.  Reverse recovery time vs. diode current slope** 

**Figure 25.  Reverse recovery charge vs. diode current slope** 

DocID026224 Rev 3 

9/18 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

T 

**Figure 26. Reverse recovery energy vs. diode current slope** 

10/18 

DocID026224 Rev 3 

**STGW40M120DF3, STGWA40M120DF3** 

**Electrical characteristics** 

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Figure 27.Thermal data for IGBT<br>K ZthTO2T_A<br>d=0.5<br>SEeeeiimemstiieHY=dl=> ameteee an<br>reA |<br>A<br>0.2<br>AHHH<br>2a<br>0.1<br>-1 et INL<br>10<br>TOA TT 0.05 ak Ryell2<br>oT 0.02 6g = t,/ f<br>ae Th P ll<br>0.01<br>eli ll<br>Zlth UIE JUL |<br>Single pulse T<br>10-2<br>10 um -5 10-4 ule 10-3 |l| 10 tel -2 10-1 tp | [ (s)]<br>**----- End of picture text -----**<br>


## **Figure 28.Thermal data for diode** 

DocID026224 Rev 3 

11/18 

**STGW40M120DF3, STGWA40M120DF3** 

**Test circuits** 

## **3 Test circuits** 

**Figure 29. Test circuit for inductive load Figure 30. Gate charge test circuit switching** 

**==> picture [261 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
k<br>k<br>12 V i 47 9 100n F i 1 a<br>V ee | g=CONST<br>Vj = 2 0V=Vem ax ° 1 k a<br>k<br>iF | 2. 7 9 V g<br>° 3200 jena N D.U.T.<br>_ | 47{7 k a I °<br>JL c o<br>Py 1 k 0<br>AM01504v1 AM01505v1<br>**----- End of picture text -----**<br>


**Figure 31. Switching waveform** 

**Figure 32. Diode recovery times waveform** 

**==> picture [453 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
90% di/dt Qrr<br>VG fe 10% IF trr<br>90% ts tf<br>VCE f F f Tr(Voff) oF*e 10% / _|<br>Tcross t<br>10% IRRM<br>90%<br>IRRM<br>IC Td(on)Ton Tr(Ion) Td(offToff) “3 Tf 10% J VRRM<br>dv/dt<br>AM01506v1 AM01507v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO-247, STGW40M120DF3** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 33. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~eeee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.85|~~ee ~~|5.15<br> ~~ee~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Package mechanical data** 

## **4.2 TO-247 long leads, STGWA40M120DF3** 

## **Figure 34. TO-247 long leads drawing** 

**==> picture [35 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
8463846_A_F<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-247 long leads mechanical data** 

||**Table 9. TO-247 long leads mechanical datag leads mechanical data leads mechanical data**|**Table 9. TO-247 long leads mechanical datag leads mechanical data leads mechanical data**|**Table 9. TO-247 long leads mechanical datag leads mechanical data leads mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee~~<br>~~ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.90|5.00<br>~~ee~~|5.10<br>~~ee~~|
|A1<br>~~a~~|2.31|2.41|2.51|
|A2<br>~~a~~|1.90|2.00|2.10|
|b<br>~~a~~|1.16<br>||1.26<br>|
|b2<br>~~Ge~~|~~Ge~~|~~Ge~~|3.25<br>~~Ge~~|
|b3<br>~~Ge~~|~~Ge~~|~~Ge~~|2.25<br>~~Ge~~|
|c<br>~~a~~|0.59||0.66|
|D<br>~~a~~|20.90|21.00|21.10|
|E<br>~~a~~|15.70|15.80|15.90|
|E2<br>~~a~~|4.90<br>|5.00<br>|5.10<br>|
|E3<br>~~Ge~~|2.40<br>~~Ge~~|2.50<br>~~Ge~~|2.60<br>~~Ge~~|
|e<br>~~Ge~~|5.34<br>~~Ge~~|5.44<br>~~Ge~~|5.54<br>~~Ge~~|
|L<br>~~a~~|19.80|19.92|20.10|
|L1<br>~~a~~|||4.30|
|P<br>~~a~~|3.50|3.60|3.70|
|Q<br>~~a~~|5.60||6.00|
|S<br>~~a~~|6.05|6.15|6.25|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Apr-2014|1|Initial release.|
|16-Sep-2014|2|Document status promoted from preliminary to production data.<br>Added_Section 2.1: Electrical characteristics (curves)_.|
|10-Nov-2014|3|Updated VFvalue in_Table 4: Static characteristics_and_Figure 32:_<br>_Diode recovery times waveform_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STGW40M120DF3/igbt-80-a-185-v-468-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw40m120df3/igbt-single-1-2kv-80a-to-247-3/dp/2470028)
---

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