# IGBT, 80 A, 1.6 V, 283 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3132710/)

**URL**: https://novapart.co/products/STGW40H60DLFB/igbt-80-a-16-v-283-w-600-to-247-3-pins
**SKU**: STGW40H60DLFB
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.7200
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | HB |
| Power Dissipation | 283W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132710/)

## **STGW40H60DLFB, STGWT40H60DLFB** Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 

**Datasheet** - **production data** 

## **Features** 

**==> picture [207 x 120] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>2<br>3<br>1<br>2<br>2 e 1<br>TO-247 TO-3P<br>**----- End of picture text -----**<br>


- Maximum junction temperature: TJ = 175 °C 

- High speed switching series 

- Minimized tail current 

- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A 

- Tight parameters distribution 

- Safe paralleling 

- Low thermal resistance 

- Low VF soft recovery co-packaged diode 

- Lead free package 

## **Figure 1. Internal schematic diagram** 

**==> picture [141 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
C (2 or TAB)<br>G (1)<br>E (3)<br>**----- End of picture text -----**<br>


## **Applications** 

- Induction heating 

- Microwave oven 

- Resonant converters 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW40H60DLFB|GW40H60DLFB|TO-247|Tube|
|STGWT40H60DLFB|GWT40H60DLFB|TO-3P|Tube|



March 2014 

DocID024370 Rev 4 

1/17 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STGW40H60DLFB, STGWT40H60DLFB** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
||4.1<br>TO-247, STGW40H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
||4.2<br>TO-3P, STGWT40H60DLFB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**|



2/17 

DocID024370 Rev 4 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|VCES<br>~~a~~|Collector-emitter voltage (VGE= 0)|600<br>~~ee~~|V<br>~~ee~~|
|IC|Continuous collector current at TC= 25 °C|80|A<br>~~—~~|
|IC<br>~~a~~<br>~~ee~~|Continuous collector current at TC= 100 °C<br>~~ee~~|40|A<br>~~ee~~<br>~~—~~|
|ICP<br>(1)<br>~~ee~~|Pulsed collector current<br>~~ee~~|160<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~—~~|
|VGE<br>~~ee~~|Gate-emitter voltage<br>~~ee~~|±20|V<br>~~ee~~<br>~~—~~|
|IF<br>~~a~~<br>~~a~~|Continuous forward current at TC= 25 °C|80|A<br>~~ee~~|
|IF<br>~~a~~|Continuous forward current at TC= 100 °C|40<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|IFP<br>(1)<br>~~a~~|Pulsed forward current|160|A<br>~~ee~~<br>~~—~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|283|W|
|TSTG<br>~~a~~<br>~~a~~|Storage temperature range|- 55 to 150|°C<br>~~ee~~|
|TJ<br>~~a~~|Operating junction temperature|- 55 to 175<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



1. Pulse width limited by maximum junction temperature 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.53|°C/W|
|RthJC|Thermal resistance junction-case diode|1.47|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



DocID024370 Rev 4 

3/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified. 

|||~~a~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~<br>~~a~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|V(BR)CES<br>~~ee~~<br>~~|)~~|Collector-emitter<br>breakdown voltage<br>(VGE= 0)<br>~~ee~~<br>~~|)~~|IC= 2 mA<br>~~ee~~<br>~~a~~<br>|600<br>~~ee~~<br>~~e~~~~**e**~~<br>|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|VCE(sat)<br>~~|)~~|Collector-emitter saturation<br>voltage<br>~~ee~~<br>~~|) ~~<br>~~UE~~|VGE= 15 V, IC= 40 A<br>~~a~~<br>~~ee~~<br>~~Fr~~|~~ee~~<br>~~e~~~~**e**~~<br>~~Fr~~|1.6<br>~~ee~~<br>~~ee~~|2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~UE~~<br>~~eee~~|
|||VGE= 15 V, IC= 40 A<br>TJ= 125 °C<br>~~Fr~~|~~e~~~~**e**~~<br>~~Fr~~|1.7<br>~~ee~~|~~ee~~||
|||VGE= 15 V, IC= 40 A<br>TJ= 175 °C<br> ~~Fr~~<br>~~UE~~|~~e~~~~**e**~~<br>~~Fr~~<br>~~UE~~<br>~~ee~~|1.8<br>~~ee~~<br>~~UE~~<br>~~eee~~|~~ee~~<br>~~UE~~<br>~~eee~~||
|VF<br>~~|)~~<br>~~ee~~|Forward on-voltage<br>~~|) ~~<br>~~ee~~<br>~~ee~~<br>~~esees~~|IF= 40 A<br> <br>~~ee~~|~~e~~~~**e** ~~<br><br>~~ee~~<br>~~ee~~|1.55<br> ~~ee~~<br>~~ee~~<br>~~eee~~|1.8<br>~~ee~~<br>~~ee~~<br>~~eee~~|V<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ees~~|
|||IF= 40 A TJ= 125 °C|~~ee ~~<br>~~**e**~~|1.3<br> ~~eee~~<br>~~**e**e~~|~~eee~~<br>~~ee~~||
|||IF= 40 A TJ= 175 °C<br>~~ee~~<br>~~ees~~|~~ee~~<br>~~**e**~~<br>~~ees~~<br>~~e~~|1.25<br>~~ee~~<br>~~**e**e~~<br>~~ees~~<br>~~Ge~~|~~ee~~<br>~~ee~~<br>~~ees~~<br>~~ee~~||
|VGE(th)<br>~~ee~~|Gate threshold voltage<br>~~esees~~|VCE= VGE, IC= 1 mA<br>~~ees~~|5<br>~~**e**~~<br>~~ees~~<br>~~e~~|6<br>~~**e**e~~<br>~~ees~~<br>~~Ge~~|7<br>~~ee~~<br>~~ees~~<br>~~ee~~|V<br>~~ee~~<br>~~ees~~|
|ICES<br>~~ee~~<br>~~a~~|Collector cut-off current<br>(VGE= 0)<br>~~esees~~<br>~~a~~|VCE= 600 V<br>~~ees~~<br>~~a~~|~~**e**~~<br>~~ees~~<br>~~e ~~<br>~~a~~|~~**e**e ~~<br>~~ees~~<br> ~~Ge ~~<br>~~a~~|25<br> ~~ee~~<br>~~ees~~<br> ~~ee~~<br>~~a~~|µA<br>~~ee~~<br>~~ees~~<br>~~a~~|
|IGES<br>~~ee~~|Gate-emitter leakage<br>current (VCE= 0)<br>~~ee~~|VGE= ± 20 V<br>~~ee~~|~~ee~~|~~ee~~|250<br>~~ee~~|nA<br>~~ee~~|



## **Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|5412|-|pF|
|Coes|Output capacitance||-|198|-|pF|
|Cres|Reverse transfer<br>capacitance||-|107|-|pF|
|Qg|Total gate charge|VCC= 480 V, IC= 40 A,<br>VGE= 15 V, see_Figure 27_|-|210|-|nC|
|Qge|Gate-emitter charge||-|39|-|nC|
|Qgc|Gate-collector charge||-|82|-|nC|



4/17 

DocID024370 Rev 4 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit** td(off) Turn-off delay time VCE = 400 V, IC = 40 A, 142 ns tf Current fall time RG = 10 Ω , VGE = 15 V, see - 27.6 - ns Eoff(1) Turn-off switching losses _Figure 25_ - 363 - µJ td(off) Turn-off delay time VCE = 400 V, IC = 40 A, 141 ns tf Current fall time RG = 10 Ω , VGE = 15 V, - 61 - ns Eoff(1) Turn-off switching losses TJ = 175 °C, see _Figure 25_ - 764 - µJ ~~==~~ 1. Turn-off losses include also the tail of the collector current. **Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions Min. Typ. Max. Unit** VCC = 320 V, RG = 10 Ω , IC = 40 A, L = 100 µH, - 190 - Csnub = 20 nF, see _Figure 26_ Eoff(1) Turn-off switching losses VCC = 320 V, RG = 10 Ω , µJ IC = 40 A, L = 100 µH, - 290 - Csnub = 20 nF, TJ = 175 °C, see _Figure 26_ ~~ioe~~ 1. Turn-off losses include also the tail of the collector current. 

DocID024370 Rev 4 

5/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

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**----- Start of picture text -----**<br>
Ptot GIPD011020131205FSR IC GIPD011020131155FSR<br>(W) (A)<br>80<br>250<br>70<br>200 60<br>50<br>150<br>40<br>100 30<br>20<br>50 VGE ≥ 15V, TJ ≤ 175 °C<br>10<br>0 0<br>0 25 50 75 100 125 150 175 TC(°C) 0 25 50 75 100 125 150 175 TC(°C)<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics (TJ = 25°C)** 

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**----- Start of picture text -----**<br>
IC GIPD011020131123FSR<br>(A)<br>VGE=15V<br>140 11V<br>120<br>100<br>80<br>9V<br>60<br>40<br>20<br>0<br>0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


## **Figure 5. Output characteristics (TJ = 175°C)** 

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**----- Start of picture text -----**<br>
IC GIPD011020131135FSR<br>(A)<br>140<br>VGE=15V<br>11V<br>120<br>100 9V<br>80<br>60<br>40<br>7V<br>20<br>0<br>0 1 2 3 4 VCE(V)<br>**----- End of picture text -----**<br>


**Figure 6. VCE(sat) vs. junction temperature** 

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**----- Start of picture text -----**<br>
VCE(sat) GIPD011020131319FSR<br>(V)<br>2.6 VGE= 15V<br>IC= 80A<br>2.4<br>2.2<br>2 IC= 40A<br>1.8<br>1.6 I C = 20A<br>1.4<br>1.2<br>-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 7. VCE(sat) vs. collector current** 

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**----- Start of picture text -----**<br>
VCE(sat) GIPD011020131325FSR<br>(V)<br>TJ= 175°C<br>2.4 VGE= 15V<br>2.2<br>TJ= 25°C<br>2<br>1.8<br>1.6<br>TJ= -40 ° C<br>1.4<br>1.2<br>1.0<br>0 20 40 60 80 IC(A)<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

6/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

## **Figure 9. Forward bias safe operating area** 

**==> picture [459 x 581] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD011020131340FSR GIPD011020131351FSR<br>IC IC<br>(A) (A)<br>100<br>TC= 80°C 100<br>80<br>TC= 100°C<br>10 μs<br>60 10<br>100 μs<br>40 1 ms<br>Single pulse<br>1<br>Tc= 25°C, TJ<= 175°C<br>20 Rectangular current shape VGE= 15V<br>(duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,<br>VGE = 0/15 V, TJ = 175 °C)<br>0 1 10 f(kHz) 0.11 10 100 VCE(V)<br>Figure 10. Transfer characteristics Figure 11. Diode VF vs. forward current<br>IC GIPD011020131146FSR VF GIPD011020131402FSR<br>(A) (V) TJ= -40°C<br>140 VCE=5V<br>-40°C<br>120 2.1<br>100 TJ= 25°C<br>TJ=175°C<br>80 1.7<br>60<br>40 1.3<br>20 25°C T J = 175°C<br>0 0.9<br>ale 6 7 8 9 10 VGE(V) 20 30 40 50 60 70 IF(A)<br>Figure 12. Normalized VGE(th) vs junction  Figure 13. Normalized V(BR)CES vs. junction<br>temperature temperature<br>VGE(th) GIPD011020131418FSR V(BR)CES GIPD011020131412FSR<br>(norm) (norm)<br>1.1 IC= 2mA<br>VCE= VGE 1.1<br>IC= 2mA<br>1.0<br>0.9<br>1.0<br>0.8<br>0.7<br>0.6-50 0 50 100 150 TJ(°C) 0.9-50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

7/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

**==> picture [460 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage<br>C GIPD011020131431FSR VGE GIPD011020131424FSR<br>(pF) (V)<br>10000<br>16<br>Ciss IC= 40A<br>14<br>IGE= 1mA<br>VCC= 520V<br>12<br>1000<br>10<br>8<br>100 Coes 6<br>Cres 4<br>2<br>10 0<br>PS 0.1 1 10 VCE(V) 0 50 100 150 200 Qg(nC)<br>Figure 16. Switching-off loss vs collector  Figure 17. Switching-off loss vs gate resistance<br>current<br>E GIPD011020131448FSR E GIPD011020131439FSR<br>(μJ) VCC = 400V, VGE = 15V,  (μJ)<br>1800<br>RG = 10Ω, TJ = 175°C VCC = 400 V, VGE = 15 V,<br>1100<br>1600 IC = 40 A, TJ = 175 °C<br>1400<br>1000<br>1200<br>1000 900<br>EOFF EOFF<br>800<br>800<br>600<br>400<br>700<br>200<br>0 600<br>0 20 40 60 80 IC(A) 2 6 10 14 18 22 RG(Ω)<br>Figure 18. Switching-off loss vs temperature Figure 19. Switching-off loss vs collector-<br>emitter voltage<br>E GIPD011020131454FSR E GIPD011020131503FSR<br>(μJ) (μJ)<br>VCC= 400V, VGE= 15V,  TJ= 175°C, VGE= 15V,<br>R G = 10Ω, I C = 40A R G = 10Ω, I C = 40A<br>700 800<br>500 600<br>EOFF EOFF<br>300 400<br>100 200<br>EaVa -50 0 50 100 150 TJ(°C) 150 250 350 450 VCE(V)<br>8/17 DocID024370 Rev 4<br>**----- End of picture text -----**<br>


**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

**Figure 20. Switching times vs. collector current** 

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**----- Start of picture text -----**<br>
GIPD011020131517FSR<br>t<br>(ns) °<br>TJ= 175 C, VGE= 15V,<br>RG= 10Ω, VCC= 400V<br>tdoff<br>100<br>tf<br>10<br>10 30 50 70 IC(A)<br>**----- End of picture text -----**<br>


## **Figure 21. Switching times vs. gate resistance** 

**==> picture [186 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD011020131523FSR<br>t<br>(ns)<br>TJ= 175°C, VGE= 15V,<br>IC= 40A, VCC= 400V<br>tdoff<br>100<br>tf<br>10<br>2 6 10 14 18 22 RG(Ω)<br>**----- End of picture text -----**<br>


**Figure 22. Switching-off losses vs. capacitive load** 

**==> picture [186 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
E GIPD071020131330FSR<br>(μJ) Lsnub= 0.1mH, VGE= 15V,<br>VCC= 320V, IC= 40A, Rg= 10Ω<br>450<br>350<br>TJ= 175°C<br>250<br>150<br>TJ= 25°C<br>50<br>0 20 40 60 80 Csnub(nF)<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

9/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Electrical characteristics** 

**Figure 23. Thermal impedance for IGBT** 

**==> picture [279 x 269] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2<br>10<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


**Figure 24. Thermal impedance for diode** 

10/17 

DocID024370 Rev 4 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Test circuits** 

## **3 Test circuits** 

**Figure 25. Test circuit for inductive load Figure 26. Test circuit for capacitive load switching switching** ~~A A A OA~~ Cc Cc o | ~~L~~ =100ube ~~H~~ o IX ~~L~~ -=100y ~~H E~~ B 3 ~~.~~ 3 1000 ~~E~~ B 3 ~~.~~ 3 | 1000 B C EF ELF Veo B C van ELF Vec Go \K. AD.U.T. co \K. AD.U.T. Csnub + Ro ~~E~~ + Ro ~~E~~ AM01504v1 AM17096v1 

## **Figure 27. Gate charge test circuit** 

**Figure 28. Switching waveform** 

**==> picture [263 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
ee 90%<br>K a VG f =o ~~ i H N 10%<br>| ————~, _ 90%<br>VCE Tr(Voff) 10%<br>Tcross<br>|| |; f j<br>| es on 90%<br>V IC Td(on)Ton | Tr(Ion) | Td(offToff) 4 Tf 10%<br>Ve ._— ~ -- eae<i<br>AM01505v1 AM01506v1<br>**----- End of picture text -----**<br>


## **Figure 29. Diode recovery time waveform** 

**==> picture [197 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
di/dt Qrr<br>IF trr Z L<br>ta Z| tb<br>IRRM ’” Gi z IRRM t<br>Gi| 25%<br>VF<br>dv/dt<br>AM01507v1<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

11/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO-247, STGW40H60DLFB** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~<br>|||
||**Min.**<br>~~ee~~<br>|**Typ.**<br>~~ee~~<br>~~ee~~<br>|**Max.**<br>~~ee~~<br>|
|A<br>~~a~~|4.85<br>~~CD~~|~~ee~~<br>~~CD~~|5.15<br>~~CD~~|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~<br>~~es~~|1.0||1.40|
|b1<br>~~es~~|2.0||2.40|
|b2<br>~~es~~<br>~~a~~|3.0||3.40|
|c<br>~~a~~|0.40||0.80|
|D<br>~~a~~|19.85||20.15|
|E<br>~~a~~|15.45||15.75|
|e<br>~~a~~<br>~~es~~|5.30|5.45|5.60|
|L<br>~~es~~|14.20||14.80|
|L1<br>~~es~~<br>~~a~~|3.70||4.30|
|L2<br>~~a~~||18.50||
|∅P<br>~~a~~|3.55||3.65|
|∅R<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



12/17 

DocID024370 Rev 4 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Package mechanical data** 

## **Figure 30. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

13/17 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Package mechanical data** 

## **4.2 TO-3P, STGWT40H60DLFB** 

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**----- Start of picture text -----**<br>
Table 9. TO-3P mechanical data<br>**----- End of picture text -----**<br>


||**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|**Table 9. TO-3P mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~<br>~~ee~~|**Typ.**<br>~~a~~<br>~~ee~~<br>~~ee~~|**Max.**<br>~~a~~<br>~~ee~~|
|A<br>~~a~~|4.60|~~ee~~|5|
|A1<br>~~a~~|1.45|1.50|1.65|
|A2<br>~~a~~|1.20|1.40|1.60|
|b<br>~~a~~|0.80|1|1.20|
|b1<br>~~a~~<br>~~es~~|1.80||2.20|
|b2<br>~~es~~|2.80||3.20|
|c<br>~~es~~<br>~~a~~|0.55|0.60|0.75|
|D<br>~~a~~|19.70|19.90|20.10|
|D1<br>~~a~~||13.90||
|E<br>~~a~~|15.40||15.80|
|E1<br>~~a~~<br>~~es~~||13.60||
|E2<br>~~es~~||9.60||
|e<br>~~es~~<br>~~a~~|5.15|5.45|5.75|
|L<br>~~a~~|19.50|20|20.50|
|L1<br>~~a~~||3.50||
|L2<br>~~a~~|18.20|18.40|18.60|
|øP<br>~~a~~<br>~~es~~|3.10<br>||3.30<br>|
|Q<br>~~es~~||5<br>||
|Q1<br>~~esa~~|~~a~~|3.80<br>~~a~~|~~a~~|



14/17 DocID024370 Rev 4 ~~2~~ 

**STGW40H60DLFB, STGWT40H60DLFB** 

**Package mechanical data** 

## **Figure 31. TO-3P drawing** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8045950_A<br>**----- End of picture text -----**<br>


DocID024370 Rev 4 

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**STGW40H60DLFB, STGWT40H60DLFB** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Mar-2013|1|Initial release.|
|07-Oct-2013|2|Document status changed from preliminary to production data.<br>Added_Section 2.1: Electrical characteristics (curves)_.<br>Minor text changes.|
|13-Mar-2014|3|Updated title and description in cover page.|
|18-Mar-2014|4|Updated title in cover page and_Section 4: Package mechanical data_.|



16/17 

DocID024370 Rev 4 

**STGW40H60DLFB, STGWT40H60DLFB** 

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DocID024370 Rev 4 

17/17 



## Links

- [View this product on Novapart](https://novapart.co/products/STGW40H60DLFB/igbt-80-a-16-v-283-w-600-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw40h60dlfb/igbt-600v-80a-175deg-c-283w/dp/3132710)
---

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