# IGBT, 80 A, 2.1 V, 468 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/STGW40H120DF2/igbt-80-a-21-v-468-w-12-kv-to-247-3-pins
**SKU**: STGW40H120DF2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.7000
**Stock**: 500+
**Lead Time**: 120 days (indicative)
## Description
DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:468W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pin
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | H |
| Power Dissipation | 468W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2807176/)
## **STGW40H120DF2, STGWA40H120DF2**
## Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datasheet - production data
## **Features**
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 2.1 V (typ.) @ IC = 40 A
- 5 μs minimum short circuit withstand time at TJ=150 °C
- Safe paralleling
- Very fast recovery antiparallel diode
- Low thermal resistance
## **Applications**
- Uninterruptible power supply
**Figure 1: Internal schematic diagram**
- Welding machines
- Photovoltaic inverters
- Power factor correction
- High frequency converters
## **Description**
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW40H120DF2|G40H120DF2|TO-247|Tube|
|STGWA40H120DF2|G40H120DF2|TO-247 longleads|Tube|
June 2016
DocID023753 Rev 5
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This is information on a product in full production.
_www.st.com_
|**Contents**
**STGW40H120DF2, STGWA40H120DF2**|**Contents**
**STGW40H120DF2, STGWA40H120DF2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 11**|
|**4**|**Package information ..................................................................... 12**|
||4.1
TO-247 package information ........................................................... 12|
||4.2
TO-247 long leads package information ......................................... 14|
|**5**|**Revision history ............................................................................ 16**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current at TC= 25 °C|80|A|
|IC|Continuous collector current at TC= 100 °C|40|A|
|ICP_(1)_|Pulsed collector current|160|A|
|VGE|Gate-emitter voltage|±20|V|
|VGE|Transientgate-emitter voltage (tp≤ 10 μs, D ≤ 0.01)|±30|V|
|IF|Continuous forward current at TC= 25 °C|80|A|
|IF|Continuous forward current at TC= 100 °C|40|A|
|IFP_(1)_|Pulsed forward current|160|A|
|PTOT|Total dissipation at TC= 25 °C|468|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|0.32|°C/W|
|RthJC|Thermal resistance junction-case diode|1.3|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|
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**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
## **Table 4: Static characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown
voltage|VGE= 0 V, IC= 2 mA|1200|||V|
|VCE(sat)|Collector-emitter saturation
voltage|VGE= 15 V, IC= 40 A||2.1|2.6|V|
|||VGE= 15 V, IC= 40 A,
TJ= 125 °C||2.4|||
|||VGE= 15 V, IC= 40 A,
TJ= 175 °C||2.5|||
|VF|Forward on-voltage|IF= 40 A||3.9|4.9|V|
|||IF= 40 A, TJ= 125 °C||3.05|||
|||IF= 40 A, TJ= 175 °C||2.8|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 2 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 1200 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|
**Table 5: Dynamic characteristics**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,
VGE= 0 V|-|3200|-|pF|
|Coes|Output capacitance||-|220|-||
|Cres|Reverse transfer
capacitance||-|80|-||
|Qg|Totalgate charge|VCC= 960 V, IC= 40 A,
VGE= 15 V (see_Figure 30: "_
_Gate charge test circuit"_)|-|158|-|nC|
|Qge|Gate-emitter charge||-|17|-||
|Qgc|Gate-collector charge||-|85|-||
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**Electrical characteristics**
**Table 6: IGBT switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 600 V, IC= 40 A,
VGE= 15 V, RG= 10 Ω
(see_Figure 31: " Switching_
_waveform"_)||18|-|ns|
|tr|Current rise time|||37|-|ns|
|(di/dt)on|Turn-on current slope|||1755|-|A/µs|
|td(off)|Turn-off-delaytime|||152|-|ns|
|tf|Current fall time|||83|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||1|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||1.32|-|mJ|
|Ets|Total switchingenergy|||2.32|-|mJ|
|td(on)|Turn-on delaytime|VCE= 600 V, IC= 40 A,
VGE= 15 V, RG= 10 Ω
TJ= 175 °C
(see_Figure 31: " Switching_
_waveform"_)||36|-|ns|
|tr|Current rise time|||20|-|ns|
|(di/dt)on|Turn-on current slope|||1580|-|A/µs|
|td(off)|Turn-off-delaytime|||161|-|ns|
|tf|Current fall time|||190|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||1.81|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||2.46|-|mJ|
|Ets|Total switchingenergy|||4.27|-|mJ|
|tsc|Short-circuit withstand time|VCC= 600 V, VGE= 15 V,
TJstart= 150 °C|5||-|µs|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
**Table 7: Diode switching characteristics (inductive load)**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 40 A, VR= 600 V,
VGE= 15 V
(see_Figure 31: " Switching_
_waveform"_) di/dt = 500 A/µs|-|488||ns|
|Qrr|Reverse recoverycharge||-|2.59||µC|
|Irrm|Reverse recoverycurrent||-|11.6||A|
|dIrr/dt|Peak rate of fall of reverse
recovery current during tb||-|406||A/µs|
|Err|Reverse recoveryenergy||-|0.38||mJ|
|trr|Reverse recoverytime|IF= 40 A, VR= 600 V,
VGE= 15 V TJ= 175 °C
(see_Figure 31: " Switching_
_waveform"_) di/dt = 500 A/µs|-|484||ns|
|Qrr|Reverse recoverycharge||-|4.5||µC|
|Irrm|Reverse recoverycurrent||-|18.6||A|
|dIrr/dt|Peak rate of fall of reverse
recoverycurrent duringtb||-|170||A/µs|
|Err|Reverse recoveryenergy||-|0.94||mJ|
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**Electrical characteristics**
## **2.2 Electrical characteristics (curves)**
**==> picture [390 x 177] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Power dissipation vs. case Figure 3: Collector current vs. case
temperature temperature
Ptot GIPG130320141053FSR IC GIPG130320141109FSR
(W) (A)
450 80
VGE ≥15V, TJ ≤175 °C VGE ≥ 15V, TJ ≤ 175 °C
400
70
350
60
300
50
250
40
200
30
150
100 20
50 10
0 0
0 25 50 75 100 125 150 175 TC(°C) 0 50 100 150 TC(°C)
**----- End of picture text -----**
**==> picture [382 x 166] intentionally omitted <==**
**----- Start of picture text -----**
Figure 4: Output characteristics (TJ = 25 °C) J = 25 °C) = 25 °C) Figure 5: Output characteristics (TJ = 175 °C)
IC GIPG130320141114FSR IC GIPG130320141127FSR
(A) 13V (A)
VGE=15V 11V
140 140 VGE=15V
13V
120 120
11V
100 100
80 80
9V
60 60
9V
40 40
20 20
7V 7V
0 0
0 1 2 3 4 5 VCE(V) 0 1 2 3 4 5 VCE(V)
**----- End of picture text -----**
**Figure 4: Output characteristics (TJ = 25 °C) J = 25 °C) = 25 °C)**
**==> picture [390 x 167] intentionally omitted <==**
**----- Start of picture text -----**
Figure 6: VCE(sat) vs. junction temperature CE(sat) vs. junction temperature vs. junction temperature Figure 7: VCE(sat) vs. collector current
VCE(sat)(V) GIPG130320141146FSRIC= 80A VCE(sat)(V) GIPG190320151413RV
3.4 VGE= 15V 5.0 VGE= 15V TJ= 175°C
3.0 4.2
TJ= 25°C
IC= 40A
2.6 3.4
2.2 IC= 20A 2.6
TJ= - 40°C
1.8 1.8
1.4 1.0
-50 0 50 100 150 TJ(°C) 0 30 60 90 120 150 IC(A)
**----- End of picture text -----**
**Figure 6: VCE(sat) vs. junction temperature CE(sat) vs. junction temperature vs. junction temperature**
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**Electrical characteristics**
**==> picture [392 x 168] intentionally omitted <==**
**----- Start of picture text -----**
Figure 8: Collector current vs. switching Figure 9: Forward bias safe operating area
frequency
Ic[A] GIPG130320141328FSR IC GIPG130320141339FSR
(A)
120
100 100 oy +taire SS=maie iE 1 µs
Tc=80°C
80 iin saes SA 10 µs
Tc=100 [°] C 10 x SSXN
60 S 100 µs
IN
1 ms
40 Single pulse
1
rectangular current shape, Tc= 25°C, TJ<= 175°C
20 (dutycycle=0.5, VCC = 600V,R =10G Ω, VGE= 15V
VGE =0/15 V,TJ =175°C)
01 10 f [kHz] 0.11 10 100 1000 VCE(V)
**----- End of picture text -----**
**Figure 10: Transfer characteristics**
**Figure 11: Diode VF vs. forward current**
**==> picture [161 x 142] intentionally omitted <==**
**----- Start of picture text -----**
IC GIPG130320141348FSR
(A)
140 VCE=10V
120
TJ=25°C
100
80
TJ=175°C
60
40
20
0 7
5 7 9 11 VGE(V)
**----- End of picture text -----**
**Figure 12: Normalized VGE(th) vs. junction temperature**
**Figure 13: Normalized V(BR)CES vs. junction temperature**
**==> picture [382 x 147] intentionally omitted <==**
**----- Start of picture text -----**
VGE(th) GIPG130320141400FSR V(BR)CES GIPG130320141405FSR
(norm) (norm)
IC= 2mA 1.06
1.1 VCE= VGE
IC= 2mA
1.0 1.02
0.9
0.98
0.8
0.94
0.7
0.6 0.9
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)
**----- End of picture text -----**
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## **Electrical characteristics**
**Figure 14: Capacitance variations**
**Figure 15: Gate charge vs. gate-emitter voltage**
**==> picture [371 x 147] intentionally omitted <==**
**----- Start of picture text -----**
C GIPG190320151507RV VGE GIPG200320151700RV
(pF) (V)
Cies
15 VCC
f=1 MHz,VGE=0V IC 40A
1000 12 IG 1mA
9
100 Coes 6
Cres 3
10 0
0.1 1 10 100 VCE(V) 0 30 60 90 120 150 Qg(nC)
**----- End of picture text -----**
**Figure 16: Switching energy vs. collector current**
**Figure 17: Switching energy vs. gate resistance**
**==> picture [373 x 146] intentionally omitted <==**
**----- Start of picture text -----**
E GIPG130320141432FSR E GIPG130320141439FSR
5000(µJ) VCC = 600V, VGE = 15V, (µJ)
RG = 10Ω, TJ = 175°C 4000 EOFF va ° :
4000 ¢ 7 ¢ G 35003000 : Pid va 7 EON
EOFF v7 va a
3000 4 2500 77
7 2
4 / EON 2000 ae
7 “i
2000 / / 1500 , ‘
1000 ? a ¢ 7 1000 VCCIC = 40 A, T = 600 V, VJ = 175 °CGE = 15 V,
ea
eC a 500
0 0
0 20 40 60 80 IC(A) 0 10 20 30 40 RG(Ω)
**----- End of picture text -----**
**Figure 18: Switching energy vs. temperature**
**Figure 19: Switching energy vs. collector emitter voltage**
**==> picture [373 x 146] intentionally omitted <==**
**----- Start of picture text -----**
E GIPG130320141450FSR E GIPG130320141459FSR
(µJ) VCC= 600V, VGE= 15V, (µJ) TJ= 175°C, VGE= 15V,
2500 RG= 10Ω, IC= 40A RG= 10Ω, IC= 40A 4
3200 7
2300 / ¢
4
2100 EOFF 2600 EOFF ¢ 4 4
1900 7 7
1700 a a a o 2000 ae 7
EON 7
1500 -7 Pid a 1400 ¢ ma a
EON
1300 va a ? 7
L rae a 800 7 ¢ 7
1100 : a
a
900 200
0 50 100 150 TJ(°C) 200 400 600 800 VCE(V)
**----- End of picture text -----**
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**Electrical characteristics**
## **STGW40H120DF2, STGWA40H120DF2**
**==> picture [416 x 373] intentionally omitted <==**
**----- Start of picture text -----**
Figure 20: Short-circuit time and current vs. Figure 21: Switching times vs. collector
VGE current
tsc30 GIPG190320151623RVIsc t GIPG140320141159FSR
(µs) (A) (ns) TJ= 175°C, VGE= 15V,
26 tSC VTCCJ ≤150 °C ≤ 600 V ISC 320 RG= 10Ω, VCC= 600V tf
100 tdoff
22 260
tdon
18 200
10
tr
14 140
10 80
1
10 11 12 13 14 VGE(V) 0 20 40 60 80 IC(A)
Figure 22: Switching times vs. gate Figure 23: Reverse recovery current vs. diode
resistance current slope
t GIPG140320141205FSR Irm GIPG140320141215FSR
(ns) TJ= 175°C, VGE= 15V, tdoff (A) IF = 40A, VCC = 600V,
IC= 40A, VCC= 600V 30 VGE = 15V
tf
25
100
tdon 20 TJ =175°C
15
tr
10
10
5
1 0
0 10 20 30 40 RG(Ω) 0 400 800 1200 1600 di/dt(A/µs)
**----- End of picture text -----**
**==> picture [404 x 177] intentionally omitted <==**
**----- Start of picture text -----**
Figure 24: Reverse recovery time vs. diode Figure 25: Reverse recovery charge vs. diode
current slope current slope
GIPG140320141222FSR GIPG140320141238FSR
trr Qrr
(ns) IF = 40A, VCC = 600V, (nC) IF = 40A, VCC = 600V,
1400 VGE = 15V 6000 VGE = 15V
1200
5500
1000
5000
800
4500
600
TJ =175°C 4000 TJ =175°C
400
3500
200
0 3000
0 400 800 1200 1600 di/dt(A/µs) 0 400 800 1200 1600 di/dt(A/µs)
**----- End of picture text -----**
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**Electrical characteristics**
**==> picture [257 x 160] intentionally omitted <==**
**----- Start of picture text -----**
Figure 26: Reverse recovery energy vs. diode current slope
Err GIPG140320141247FSR
(µJ) IF = 40A, VCC = 600V,
VGE = 15V
1400
1200
1000
800
TJ =175°C
600
400
0 400 800 1200 1600 di/dt(A/µs)
**----- End of picture text -----**
**Figure 27: Thermal impedance for IGBT**
**==> picture [140 x 144] intentionally omitted <==**
**Figure 28: Thermal impedance for diode**
**==> picture [143 x 143] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**==> picture [392 x 20] intentionally omitted <==**
**----- Start of picture text -----**
Figure 29: Test circuit for inductive load Figure 30: Gate charge test circuit
switching
**----- End of picture text -----**
**==> picture [417 x 153] intentionally omitted <==**
**----- Start of picture text -----**
VCC
A A
C 12 V 47 kΩ 1 kΩ
G L=100 µH 100 nF
E B
B
G C D.U.T 3.3µF 1000µF VCC Vi ≤ VGMAX IG=CONST 100 Ω D.U.T.
2200
+ RG E µF 2.7 kΩ VG
- 47 kΩ
PW 1 kΩ
AM01504v1 AM01505v1
**----- End of picture text -----**
**Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform**
**==> picture [122 x 69] intentionally omitted <==**
**==> picture [193 x 132] intentionally omitted <==**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO-247 package information**
**Figure 33: TO-247 package outline**
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**Package information**
**Table 8: TO-247 package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|
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**Package information**
## **4.2 TO-247 long leads package information**
**Figure 34: TO-247 long lead package outline**
~~©~~ 14/17 DocID023753 Rev 5
**STGW40H120DF2, STGWA40H120DF2**
**Package information**
**Table 9: TO-247 long lead package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|
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**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|03-Oct-2012|1|First release.|
|29-Jan-2014|2|Updated features in cover page.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics (inductive
load).
Minor text changes.|
|24-Mar-2014|3|Updated title and description in cover page.
Updated Table 4: Static characteristics, Table 5: Dynamic
characteristics and Table 7: Diode switching characteristics (inductive
load).
Added Section 2.1: Electrical characteristics (curves).|
|31-Mar-2015|4|Added device in TO-247 long leads.
Updated 4: Package information.
Updated Figure 7, Figure 11, Figure 14, Figure 15, Figure 20, Figure 21
and added Figure 26.
Minor text changes.|
|28-Jun-2016|5|Modified:_Table 2: "Absolute maximum ratings"_,_Section 2: "Electrical_
_characteristics"_,_Table 6: "IGBT switching characteristics (inductive_
_load)"_
Minor text changes.|
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## **STGW40H120DF2, STGWA40H120DF2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2016 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STGW40H120DF2/igbt-80-a-21-v-468-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw40h120df2/igbt-single-1-2kv-80a-to-247/dp/2807176)
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