# IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:1293660/)

**URL**: https://novapart.co/products/STGW39NC60VD/igbt-80-a-25-v-250-w-600-to-247-3-pins
**SKU**: STGW39NC60VD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.7700
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Te

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1293660/)

40 A - 600 V - ver fast IGBT y 

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## **STGW39NC60VD** 

## **Features** 

- Low CRES / CIES ratio (no cross conduction susceptibility) 

- IGBT co-packaged with ultra fast free-wheeling diode 

## **Applications** 

- High frequency inverters 

- UPS 

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3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Motor drivers 

- Induction heating 

## **Description** 

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 

## **Figure 1. Internal schematic diagram** 

**==> picture [130 x 129] intentionally omitted <==**

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW39NC60VD|GW39NC60VD|TO-247|Tube|



1/15 

July 2008 

Rev 8 

_www.st.com_ 

**Contents** 

**STGW39NC60VD** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|---|---|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)           . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
||2.2<br>Frequency applications  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



2/15 

**STGW39NC60VD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|600|V|
|IC<br>(1)|Collector current (continuous) at 25 °C|80|A|
|IC<br>(1)|Collector current (continuous) at 100 °C|40|A|
|ICL<br>(2)|Turn-off latching current|220|A|
|ICP<br>(3)|Pulsed collector current|220|A|
|VGE|Gate-emitter voltage|± 20|V|
|IF|Diode RMS forward current at TC= 25 °C|30|A|
|IFSM|Surge non repetitive forward current<br>(tp=10 ms sinusoidal)|120|A|
|PTOT|Total dissipation at TC= 25 °C|250|W|
|Tj|Operating junction temperature|– 55 to 150|°C|



1. Calculated according to the iterative formula: 

IC ( TC ) = ---------------------------------------------------------------------------------------------------RTHJ – C × TJMAXVCESAT– TC ( MAX ) ([T] C ,[I] C) 

2. Vclamp = 80%(VCES) , Tj = 150 °C, RG = 10 Ω , VGE= 15 V 

3. Pulse width limited by max. junction temperature allowed 

**Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case (IGBT) max|0.5|°C/W|
|Rthj-case|Thermal resistance junction-case (diode) max|1.5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|



3/15 

**STGW39NC60VD** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)CES|Collector-emitter breakdown<br>voltage (VGE= 0)|IC= 1 mA|600|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 30 A<br>VGE= 15 V, IC= 30 A,<br>TC=125 °C||1.8<br>1.7|2.4|V<br>V|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC=1 mA|3.75||5.75|V|
|ICES|Collector cut-off current<br>(VGE= 0)|VCE= 600 V<br>VCE= 600 V, TC= 125 °C|||500<br>5|µA<br>mA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE= ± 20 V|||±100|nA|
|gfs (1)|Forward transconductance|VCE= 15 V,IC= 30 A||20||S|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

## **Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max. **|**Unit**|
|---|---|---|---|---|---|---|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25 V, f = 1 MHz, VGE= 0||2900<br>298<br>59||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 390 V, IC= 30 A,<br>VGE= 15 V<br>_(see Figure 19)_||126<br>16<br>46||nC<br>nC<br>nC|



4/15 

**STGW39NC60VD** 

**Electrical characteristics** 

**Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)onf|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 390 V, IC= 30 A,<br>RG=10Ω,VGE= 15 V<br>_(see Figure 18)_||33<br>13<br>2500||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 390 V, IC= 30 A,<br>RG=10Ω,VGE=15 V<br>TC=125 °C<br>_(see Figure 18)_||32<br>14<br>2280||ns<br>ns<br>A/µs|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 390 V, IC= 30 A,<br>RG=10Ω,VGE=15 V<br>_(see Figure 18)_||33<br>178<br>65||ns<br>ns<br>ns|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 390 V, IC= 30 A,<br>RG=10Ω,VGE=15 V<br>TC=125 °C<br>_(see Figure 18)_||68<br>238<br>128||ns<br>ns<br>ns|



## **Table 7. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 390 V, IC= 30 A<br>RG= 10Ω, VGE= 15 V,<br>_(see Figure 20)_||333<br>537<br>870||µJ<br>µJ<br>µJ|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 390 V, IC= 30 A<br>RG= 10Ω, VGE= 15 V,<br>TC= 125 °C<br>_(see Figure 20)_||618<br>1125<br>1743||µJ<br>µJ<br>µJ|



1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 

2. Turn-off losses include also the tail of the collector current 

5/15 

**STGW39NC60VD** 

**Electrical characteristics** 

**Table 8. Collector-emitter diode** 

|**Table 8.**|**Collector-emitter diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VF|Forward on-voltage|IF= 30 A<br>IF= 30 A, TC= 125 °C||2.4<br>1.8||V<br>V|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 30 A, VR= 50 V,<br>di/dt =100 A/µs<br>_(see Figure 21)_||45<br>56<br>2.55||ns<br>nC<br>A|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 30 A, VR= 50 V,<br>TC= 125 °C,<br>di/dt =100 A/µs<br>_(see Figure 21)_||100<br>290<br>5.8||ns<br>nC<br>A|



6/15 

**STGW39NC60VD** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Output characteristics** 

## **Figure 3. Transfer characteristics** 

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## **Figure 4. Transconductance** 

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**Figure 6. Collector-emitter on voltage vs collector current** 

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**Figure 5. Collector-emitter on voltage vs temperature** 

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**Figure 7. Normalized gate threshold vs temperature** 

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7/15 

**STGW39NC60VD** 

**Electrical characteristics** 

**Figure 8. Normalized breakdown voltage vs Figure 9. Gate charge vs gate-emitter voltage temperature** 

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**Figure 10. Capacitance variations** 

**Figure 11. Switching losses vs temperature** 

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**Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector** 

**current** 

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8/15 

**STGW39NC60VD** 

**Electrical characteristics** 

## **Figure 14. Thermal impedance** 

## **Figure 15. Turn-off SOA** 

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## **Figure 16. Emitter-collector diode characteristics** 

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**----- Start of picture text -----**<br>
IFM(A)<br>120<br>110 Tj=125°C<br>(Maximum values)<br>100<br>90<br>80<br>Tj=125°C<br>70 (Typical values)<br>60<br>Tj=25°C<br>50 (Maximum values)<br>40<br>30<br>20<br>10 VFM(V)<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br>


**Figure 17. IC vs. frequency** 

**==> picture [159 x 154] intentionally omitted <==**

## **2.2 Frequency applications** 

For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: 

fMAX = (PD - PC) / (EON + EOFF) 

- The maximum power dissipation is limited by maximum junction to case thermal resistance: 

## **Equation 1** 

PD = ∆ T / RTHJ-C 

considering ∆ T = TJ - TC = 125 °C - 75 °C = 50 °C 

- The conduction losses are: 

9/15 

**STGW39NC60VD** 

**Electrical characteristics** 

## **Equation 2** 

PC = IC * VCE(SAT) * δ 

with 50% of duty cycle, VCESAT typical value @125 °C. 

- Power dissipation during ON & OFF commutations is due to the switching frequency: 

## **Equation 3** 

PSW = (EON + EOFF) * freq.Typical values @ 125 °C for switching losses are used (test conditions: VCE = 390 V, VGE = 15 V, RG = 10 Ω ). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3). 

10/15 

**STGW39NC60VD** 

**Test circuit** 

## **3 Test circuit** 

**Figure 18. Test circuit for inductive load switching** 

**Figure 19. Gate charge test circuit** 

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**Figure 20. Switching waveforms** 

**Figure 21. Diode recovery times waveform** 

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11/15 

**STGW39NC60VD** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

12/15 

**STGW39NC60VD** 

**Package mechanical data** 

**TO-247 mechanical data** 

|**Dim.**||**mm.**||
|---|---|---|---|
||**Min.**|**Typ**|**Max .**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|øP|3.55||3.65|
|øR|4.50||5.50|
|S||5.50||



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13/15 

**STGW39NC60VD** 

**Revision history** 

## **5 Revision history** 

## **Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|17-Nov-2005|1|First release|
|05-May-2006|2|Inserted curves|
|10-Jul-2006|3|Modified value on_Absolute maximum ratings_|
|01-Dec-2006|4|Modified value on_Dynamic_|
|16-May-2007|5|New curves updated:_Figure 5_and_Figure 6_|
|22-Aug-2007|6|Added new_Figure 17_and new section_2.2: Frequency_<br>_applications_|
|31-Jan-2008|7|Modified:_Table 8: Collector-emitter diode_|
|29-Jul-2008|8|Updated VCE(sat)on_Table 4_|



14/15 

**STGW39NC60VD** 

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15/15 



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