# IGBT, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:1293658/)

**URL**: https://novapart.co/products/STGW35NB60SD/igbt-70-a-17-v-200-w-600-to-247-3-pins
**SKU**: STGW35NB60SD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.5100
**Stock**: 10+
**Lead Time**: 274 days (indicative)

## Description

DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Te

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 70A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1293658/)

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## **STGW35NB60SD** 

## N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH™ IGBT 

## **General features** 

|**Type**|**VCES**|**VCE(sat)**<br>**(Max)@ 25°C**|**IC **<br>**@100°C**|
|---|---|---|---|
|STGW35NB60SD|600V|< 1.7V|35A|



- LOW ON-VOLTAGE DROP (VCEsat) 

- LOW INPUT CAPACITANCE 

- HIGH CURRENT CAPABILITY 

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**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


## **Description** 

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH[™ ] IGBTs, with outstanding performances. 

## **Applications** 

- LIGHT DIMMER 

- HID 

- WELDING 

## **Internal schematic diagram** 

**==> picture [90 x 90] intentionally omitted <==**

- MOTOR CONTROL 

- STATIC RELAYS 

## **Order codes** 

|**Order codes**||||
|---|---|---|---|
|**Sales Type**|**Marking**|**Package**|**Packaging**|
|STGW35NB60SD|GW35NB60SD|TO-247|TUBE|



Rev 1 1/13 

November 2005 

_www.st.com_ 

**STGW35NB60SD** 

1 Electrical ratings 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|VCES|Collector-Emitter Voltage (VGS= 0)|600|||V|
|IC_Note_4|Collector Current (continuous) at 25°C|70|||A|
|IC_Note_4|Collector Current (continuous) at 100°C|35|||A|
|ICM _Note_ 1|Collector Current (pulsed)|250|||A|
|VGE|Gate-Emitter Voltage|± 20|||V|
|If|Diode RMS Forward Current at TC= 25°C|30|||A|
|PTOT|Total Dissipation at TC= 25°C|200|||W|
|Tj|Operating Junction Temperature|– 55 to 150|||°C|
|Tstg|Storage Temperature|||||
|TL|Maximum Lead Temperature for Soldering<br>Purpose (1.6mm from case, for 10sec.)|300|||°C|
|**Table 2.**<br>**Thermal resistance**||||||
|||**Min.**|**Typ.**|**Max.**|**Unit**|
|Rthj-case|Thermal Resistance Junction-case (IGBT)|--|--|0.625|°C/W|
|Rthj-case|Thermal Resistance Junction-case (DIODE)|--|--|1.5|°C/W|
|Rthj-amb|Thermal Resistance Junction-ambient|--|--|50|°C/W|



2/13 

**STGW35NB60SD** 

2 Electrical characteristics 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 3. Static** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VBR(CES)|Collectro-Emitter Breakdown<br>Voltage|IC= 1mA, VGE= 0|600|||V|
|VCE(SAT)|Collector-Emitter Saturation<br>Voltage|VGE= 15V, IC= 20A, Tj= 25°C<br>VGE= 15V, IC= 20A, Tj= 125°C||1.25<br>1.2|1.7|V<br>V|
|VGE(th)|Gate Threshold Voltage|VCE= VGE, IC= 250µA|2.5||5|V|
|ICES|Collector-Emitter Leakage<br>Current (VGE= 0)|VCE= Max Rating,Tc=25°C<br>VCE= Max Rating, Tc=125°C|||10<br>100|µA<br>µA|
|IGES|Gate-Emitter Leakage<br>Current (VCE= 0)|VGE= ± 20V , VCE= 0|||± 100|nA|
|gfs|Forward Transconductance|VCE= 10V,IC= 18A||20||S|



## **Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies<br>Coes<br>Cres|Input Capacitance<br>Output Capacitance<br>Reverse Transfer Capacitance|VCE= 25V, f = 1 MHz, VGE= 0||1820<br>167<br>27||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total Gate Charge<br>Gate-Emitter Charge<br>Gate-Collector Charge|VCE= 480V, IC= 20A,<br>VGE= 15V,<br>(see Figure 17)||83<br>10<br>27|115|nC<br>nC<br>nC|
|ICL|Turn-Off SOA Minimum<br>Current|Vclamp= 480V,Tj = 125°C<br>RG= 100Ω|80|||A|



3/13 

**STGW35NB60SD** 

2 Electrical characteristics 

## **Table 5. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)on|Turn-on Delay Time<br>Current Rise Time<br>Turn-on Current Slope|VCC= 480V, IC= 20A<br>RG= 100Ω, VGE= 15V, Tj= 25°C<br>(see Figure 3)||92<br>70<br>340||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on Delay Time<br>Current Rise Time<br>Turn-on Current Slope|VCC= 480V, IC= 20A<br>RG= 100Ω, VGE= 15V, Tj= 125°C<br>(see Figure 3)||80<br>73<br>320||ns<br>ns<br>A/µs|
|tr(Voff)<br>td(off)<br>tf|Off Voltage Rise Time<br>Turn-off Delay Time<br>Current Fall Time|Vcc= 480V, IC= 20A,<br>RGE= 100Ω, VGE= 5V,TJ=25°C<br>(see Figure 18)||0.78<br>1.1<br>0.79||µs<br>µs<br>µs|
|tr(Voff)<br>td(off)<br>tf|Off Voltage Rise Time<br>Turn-off Delay Time<br>Current Fall Time|Vcc= 480V, IC= 20A,<br>RGE=100Ω,VGE=15V, Tj=125°C<br>(see Figure 18)||1.1<br>2.4<br>1.2||µs<br>µs<br>µs|



## **Table 6. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eon _Note_2<br>Eoff_Note_ 3<br>Ets|Turn-on Switching Losses<br>Turn-off Switching Losses<br>Total Switching Losses|VCC= 480V, IC= 20A<br>RG=100Ω, VGE= 15V, Tj= 25°C<br>(see Figure 18)||0.84<br>7.4<br>8.24||mJ<br>mJ<br>mJ|
|Eon _Note_2<br>Eoff_Note_  3<br>Ets|Turn-on Switching Losses<br>Turn-off Switching Losses<br>Total Switching Losses|VCC= 480V, IC= 20A<br>RG=100Ω, VGE= 15V, Tj= 125°C<br>(see Figure 18)||0.86<br>11.5<br>12.4||mJ<br>mJ<br>mJ|



4/13 

**STGW35NB60SD** 

2 Electrical characteristics 

**Table 7. Collector-emitter diode** 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vf|Forward On-Voltage|If = 10A<br>If = 10A, Tj = 125°C||1.3<br>1|2|V<br>V|
|trr<br>ta<br>Qrr<br>Irrm<br>S|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current<br>Softness factor of the diode|If = 20A, VR= 40V,<br>Tj= 25°C, di/dt = 100A/µs<br>(see Figure 19)||44<br>32<br>66<br>3<br>0.375||ns<br>ns<br>nC<br>A|
|trr<br>ta<br>Qrr<br>Irrm<br>S|Reverse Recovery Time<br>Reverse Recovery Charge<br>Reverse Recovery Current<br>Softness factor of the diode|If = 20A, VR= 40V,<br>Tj= 125°C, di/dt = 100A/µs<br>(see Figure 19)||88<br>56<br>237<br>5.4<br>0.57||ns<br>ns<br>nC<br>A|



(1)Pulse width limited by max. junction temperature 

(2) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 

(3) Turn-off losses include also the tail of the collector current 

(4) Calculated according to the iterative formula: 

IC ( TC ) = RTHJ--------------------------------------------------------------------------------------------------– C × TJMAXVCESAT– ( TCMAX ) ([T] C ,[I] C) 

5/13 

**STGW35NB60SD** 

2 Electrical characteristics 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Output Characteristics** 

## **Figure 2. Transfer Characteristics** 

**==> picture [164 x 159] intentionally omitted <==**

**Figure 3. Transconductance** 

**==> picture [164 x 157] intentionally omitted <==**

**Figure 5. Collector-Emitter on Voltage vs Collector Current** 

**==> picture [164 x 153] intentionally omitted <==**

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**Figure 4. Normalized Collector-Emitter On Voltage vs Temperature** 

**==> picture [164 x 151] intentionally omitted <==**

**Figure 6. Gate Threshold vs Temperature** 

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6/13 

**STGW35NB60SD** 

2 Electrical characteristics 

**Figure 7. Normalized Breakdown Voltage vs Figure 8. Gate Charge vs Gate-Emitter Temperature Voltage** 

**==> picture [164 x 155] intentionally omitted <==**

**Figure 9. Capacitance Variations** 

**==> picture [164 x 151] intentionally omitted <==**

**Figure 10. Switching Losses vs Gate Charge** 

**==> picture [164 x 155] intentionally omitted <==**

**Figure 11. Switching Losses vs Temperature** 

**==> picture [164 x 155] intentionally omitted <==**

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**Figure 12. Switching Losses vs Collector Current** 

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7/13 

**STGW35NB60SD** 

2 Electrical characteristics 

## **Figure 13. Thermal Impedance** 

**==> picture [143 x 143] intentionally omitted <==**

## **Figure 14. Turn-Off SOA** 

**==> picture [164 x 165] intentionally omitted <==**

## **Figure 15. Emitter-Collector Diode Characteristics** 

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8/13 

**STGW35NB60SD** 

3 Test Circuits 

## **3 Test Circuits** 

## **Figure 16. Test Circuit for Inductive Load Switching** 

**==> picture [164 x 114] intentionally omitted <==**

**Figure 18. Switching Waveform** 

**==> picture [171 x 65] intentionally omitted <==**

**Figure 17. Gate Charge Test Circuit** 

**==> picture [168 x 115] intentionally omitted <==**

**Figure 19. Diode Recovery Time Waveform** 

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9/13 

**STGW35NB60SD** 

4 Package mechanical data 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 

10/13 

**STGW35NB60SD** 

4 Package mechanical data 

|||||||||||||**inch**<br>**TYP.**<br>**MAX.**<br>0.20<br>0.102<br>0.055<br>0.094<br>0.134<br>0.03<br>0.793<br>0.620<br>0.214<br>0.582<br>0.17<br>0.728<br>0.143<br>0.216<br>0.216|**inch**<br>**TYP.**<br>**MAX.**<br>0.20<br>0.102<br>0.055<br>0.094<br>0.134<br>0.03<br>0.793<br>0.620<br>0.214<br>0.582<br>0.17<br>0.728<br>0.143<br>0.216<br>0.216|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||**TO-247 MECHANICAL DATA**||||||||
|||||||||||||||
||**DIM.**|||||**mm.**||||||**inch**||
|||**MIN.**||||**TYP**||**MAX.**|||**MIN.**|**TYP.**|**MAX.**|
||A|4.85||||||5.15|||0.19||0.20|
||A1|2.20||||||2.60|||0.086||0.102|
||b|1.0||||||1.40|||0.039||0.055|
||b1|2.0||||||2.40|||0.079||0.094|
||b2|3.0||||||3.40|||0.118||0.134|
||c|0.40||||||0.80|||0.015||0.03|
||D|19.85||||||20.15|||0.781||0.793|
||E|15.45||||||15.75|||0.608||0.620|
||e|||||5.45||||||0.214||
||L|14.20||||||14.80|||0.560||0.582|
||L1|3.70|||||||4.30||0.14||0.17|
||L2|||||18.50||||||0.728||
||øP|3.55|||||||3.65||0.140||0.143|
||øR|4.50|||||||5.50||0.177||0.216|
||S|||||5.50||||||0.216||
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11/13 

**STGW35NB60SD** 

5 Revision History 

## **5 Revision History** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Nov-2005|1|Initial release.|



12/13 

**STGW35NB60SD** 

5 Revision History 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 

© 2005 STMicroelectronics - All rights reserved 

STMicroelectronics group of companies 

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**www.st.com** 

13/13 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw35nb60sd/igbt-to-247/dp/1293658)
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