# IGBT, 60 A, 2.1 V, 200 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2849654/)

**URL**: https://novapart.co/products/STGW30NC60KD/igbt-60-a-21-v-200-w-600-to-247-3-pins
**SKU**: STGW30NC60KD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.5400
**Stock**: 200+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pin

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2849654/)

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## **STGW30NC60KD** 

## 30 A - 600 V - short circuit ru ed IGBT gg 

## **Features** 

- Low on-voltage drop (VCE(sat)) 

- Low Cres / Cies ratio (no cross conduction susceptibility) 

- Short circuit withstand time 10 µs 

- IGBT co-packaged with ultra fast free-wheeling diode 

## **Applications** 

**==> picture [98 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- High frequency inverters 

- Motor drivers 

## **Description** 

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 

## **Figure 1. Internal schematic diagram** 

**==> picture [130 x 129] intentionally omitted <==**

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW30NC60KD|GW30NC60KD|TO-247|Tube|



1/14 

March 2008 

Rev 2 

_www.st.com_ 

**STGW30NC60KD** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



2/14 

**STGW30NC60KD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VGE= 0)|600|V|
|IC<br>(1)|Collector current (continuous) at TC= 25 °C|60|A|
|IC<br>(1)|Collector current (continuous) at TC= 100 °C|28|A|
|ICL<br>(2)|Turn-off latching current|125|A|
|ICP<br>(3)|Pulsed collector current|125|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Diode RMS forward current at TC= 25 °C|30|A|
|IFSM|Surge non repetitive forward current tp= 10 ms<br>sinusoidal|120|A|
|PTOT|Total dissipation at TC= 25 °C|200|W|
|tscw|Short circuit withstand time, VCE= 0.5 V(BR)CES<br>Tj= 125°C, RG= 10Ω,VGE= 12 V|10|µs|
|Tj|Operating junction temperature|– 55 to 150|°C|



1. Calculated according to the iterative formula: 

**==> picture [167 x 25] intentionally omitted <==**

2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V 

3. Pulse width limited by max. junction temperature allowed 

**Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case IGBT max.|0.625|°C/W|
||Thermal resistance junction-case diode max.|1.5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|



3/14 

**STGW30NC60KD** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)CES|Collector-emitter breakdown<br>voltage (VGE= 0)|IC= 1 mA|600|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 20 A<br>VGE= 15 V, IC= 20 A,<br>TC= 125 °C||2.1<br>1.9|2.7|V<br>V|
|ICES|Collector cut-off current<br>(VGE= 0)|VCE= 600 V<br>VCE= 600 V, TC= 125 °C|||150<br>1|µA<br>mA|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250 µA|4.5||6.5|V|
|IGES|Gate-emitter cut-off<br>current (VCE= 0)|VGE= ±20 V|||±100|nA|
|gfs (1)|Forward transconductance|VCE= 15 V,IC= 20 A||15||S|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

## **Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25 V, f = 1 MHz, VGE= 0||2170<br>230<br>46||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 480 V, IC= 20 A,<br>VGE= 15 V<br>_(see Figure 18)_||96<br>18<br>46||nC<br>nC<br>nC|



4/14 

**STGW30NC60KD** 

**Electrical characteristics** 

## **Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 480 V, IC= 20 A<br>RG=10Ω, VGE= 15 V,<br>_(see Figure 17)_||29<br>12<br>1520||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 480 V, IC= 20 A<br>RG=10Ω, VGE= 15 V,<br>TC= 125 °C_(see Figure 17)_||27<br>14<br>1360||ns<br>ns<br>A/µs|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 480 V, IC= 20 A<br>RG=10Ω, VGE= 15 V,<br>_(see Figure 17)_||36<br>120<br>85||ns<br>ns<br>ns|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|Vcc= 480 V, IC= 20 A,<br>RG= 10Ω, VGE= 15 V<br>TC= 125 °C<br>_(see Figure 17)_||75<br>160<br>130||ns<br>ns<br>ns|



## **Table 7. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>Eoff<br>(1)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 480 V, IC= 20 A<br>RG= 10Ω, VGE= 15 V,<br>_(see Figure 17)_||350<br>435<br>785||µJ<br>µJ<br>µJ|
|Eon<br>Eoff<br>(1)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 480 V, IC= 20 A<br>RG= 10Ω, VGE= 15 V,<br>TC= 125 °C<br>_(see Figure 17)_||590<br>845<br>1435||µJ<br>µJ<br>µJ|



1. Turn-off losses include also the tail of the collector current. 

5/14 

**STGW30NC60KD** 

**Electrical characteristics** 

**Table 8. Collector-emitter diode** 

|**Table 8.**|**Collector-emitter diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VF|Forward on-voltage|IF= 20 A<br>IF= 20 A, TC= 125 °C||2.6<br>1.6|3.1|V<br>V|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 20 A,VR= 50 V,<br>di/dt = 100 A/µs<br>_(see Figure 20)_||40<br>50<br>2.5||ns<br>nC<br>A|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 20 A,VR= 50 V,<br>TC=125 °C, di/dt = 100 A/µs<br>_(see Figure 20)_||80<br>180<br>4.5||ns<br>nC<br>A|



6/14 

**STGW30NC60KD** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Output characteristics** 

## **Figure 3. Transfer characteristics** 

**==> picture [156 x 155] intentionally omitted <==**

**==> picture [155 x 153] intentionally omitted <==**

**Figure 4. Transconductance** 

**==> picture [162 x 155] intentionally omitted <==**

**Figure 5. Collector-emitter on voltage vs temperature** 

**==> picture [169 x 155] intentionally omitted <==**

**Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations** 

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7/14 

**STGW30NC60KD** 

**Electrical characteristics** 

**Figure 8. Normalized gate threshold voltage Figure 9. Collector-emitter on voltage vs vs temperature collector current** 

**==> picture [191 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGE(th)1,15<br>(norm.)<br>1.05<br> IC = 250 µA<br>0.95<br>0.85<br>0.75<br>-75 -25 25 75 125 TC (°C)175<br>**----- End of picture text -----**<br>


**Figure 10. Normalized breakdown voltage vs temperature** 

**==> picture [181 x 155] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)CES1,10<br>(norm.)<br> IC = 1 mA<br>1.05<br>1.00<br>0.95<br>0.90<br>-75 -25 25 75 125 TC (°C)175<br>**----- End of picture text -----**<br>


**==> picture [165 x 155] intentionally omitted <==**

**Figure 11. Switching losses vs temperature** 

**==> picture [159 x 153] intentionally omitted <==**

**Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current** 

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8/14 

**STGW30NC60KD** 

**Electrical characteristics** 

## **Figure 14. Thermal Impedance** 

**==> picture [160 x 155] intentionally omitted <==**

## **Figure 15. Turn-off SOA** 

**==> picture [159 x 154] intentionally omitted <==**

## **Figure 16. Forward voltage drop versus forward current** 

**==> picture [227 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
IFM(A)<br>120<br>110 Tj=125˚C<br>(Maximum values)<br>100<br>90<br>80<br>Tj=125˚C<br>70 (Typical values)<br>60<br>Tj=25˚C<br>50 (Maximum values)<br>40<br>30<br>20<br>10 VFM(V)<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br>


9/14 

**STGW30NC60KD** 

**Test circuit** 

## **3 Test circuit** 

**Figure 17. Test circuit for inductive load Figure 18. Gate charge test circuit switching** 

**==> picture [446 x 153] intentionally omitted <==**

**Figure 19. Switching waveforms** 

**Figure 20. Diode recovery times waveform** 

**==> picture [450 x 141] intentionally omitted <==**

10/14 

**STGW30NC60KD** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

11/14 

**STGW30NC60KD** 

**Package mechanical data** 

## **TO-247 Mechanical data** 

||**Dim.**|**Min.**|**mm.**<br>**Typ**|**Max.**||
|---|---|---|---|---|---|
||A|4.85||5.15||
||A1|2.20||2.60||
||b|1.0||1.40||
||b1|2.0||2.40||
||b2|3.0||3.40||
||c|0.40||0.80||
||D|19.85||20.15||
||E|15.45||15.75||
||e||5.45|||
||L|14.20||14.80||
||L1|3.70||4.30||
||L2||18.50|||
||øP|3.55||3.65||
||øR|4.50||5.50||
||S||5.50|||



**==> picture [392 x 253] intentionally omitted <==**

12/14 

**STGW30NC60KD** 

**Revision history** 

## **5 Revision history** 

**Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Oct-2007|1|Initial release|
|07-Mar-2008|2|Updated_Figure 15: Turn-off SOA_|



13/14 

**STGW30NC60KD** 

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14/14 



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