# IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:1542228/)

**URL**: https://novapart.co/products/STGW30NC120HD/igbt-60-a-275-v-220-w-12-kv-to-247-3-pins
**SKU**: STGW30NC120HD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1000
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.75V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 220W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1542228/)

**==> picture [61 x 39] intentionally omitted <==**

## **STGW30NC120HD** N-channel 1200V - 30A - TO-247 ver fast PowerMESH™ IGBT y 

## **Features** 

|**Type**|**VCES**|**VCE(sat)**<br>**@25°C**|**IC**<br>**@100°C**|
|---|---|---|---|
|STGW30NC120HD|1200V|< 2.75V|30A|



- Low on-losses 

- Low on-voltage drop (Vcesat) 

- High current capability 

**==> picture [76 x 86] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- High input impedance (voltage driven) 

- Low gate charge 

- Ideal for soft switching application 

## **Application** 

- Induction heating 

## **Description** 

Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. 

## **Figure 1. Internal schematic diagram** 

**==> picture [150 x 150] intentionally omitted <==**

## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW30NC120HD|GW30NC120HD|TO-247|Tube|



October 2007 

1/13 

Rev 9 

_www.st.com_ 

**STGW30NC120HD** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



2/13 

**STGW30NC120HD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VGS= 0)|1200|V|
|IC<br>(1)|Collector current (continuous) at 25°C|60|A|
|IC<br>(1)|Collector current (continuous) at 100°C|30|A|
|ICL<br>(2)|Collector current (pulsed)|135|A|
|VGE|Gate-emitter voltage|±25|V|
|PTOT|Total dissipation at TC= 25°C|220|W|
|If|Diode RMS forward current at TC= 25°C|30|A|
|Tj|Operating junction temperature|–55 to 150|°C|



1. Calculated according to the iterative formula: 

IC(TC) = ------------------------------------------------------------------------------------------------------RTHJ – C × TJMAXVCESAT– (TCMAX)([T] C,[I] C) 

2. Vclamp=80% of BVces, Tj=150°C, RG=10Ω, VGE=15V 

**Table 3. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case|0.57|°C/W|
|Rthj-amb|Thermal resistance junction-ambient (diode)|1.6|°C/W|
|Rthj-amb|Thermal resistance junction-ambient (IGBT)|30|°C/W|



3/13 

**STGW30NC120HD** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VBR(CES)|Collector-emitter<br>breakdown voltage|IC= 1mA, VGE= 0|1200|||V|
|VCE(SAT)|Collector-emitter saturation<br>voltage|VGE= 15V, IC= 20A, Tj= 25°C<br>VGE= 15V, IC= 20A, Tj=125°C||2.2<br>2.0|2.75|V<br>V|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250µA|3.75||5.75|V|
|ICES|Collector-emitter leakage<br>current (VGE= 0)|VCE=Max rating,Tc=25°C<br>VCE=Max rating, Tc=125°C|||500<br>10|µA<br>mA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE=± 20V, VCE= 0|||± 100|nA|
|gfs|Forward transconductance|VCE= 25V,IC= 20A||14||S|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25V, f = 1 MHz, VGE=0||2510<br>175<br>30||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 960V,<br>IC= 20A,VGE=15V||110<br>16<br>49||nC<br>nC<br>nC|



4/13 

**STGW30NC120HD** 

**Electrical characteristics** 

**Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj=25°C_(see Figure 17)_||29<br>11<br>1820||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj= 125°C_(see Figure 17)_||27<br>14<br>1580||ns<br>ns<br>A/µs|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj= 25°C_(see Figure 17)_||90<br>275<br>312||ns<br>ns<br>ns|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj= 125°C_(see Figure 17)_||150<br>336<br>592||ns<br>ns<br>ns|



## **Table 7. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj= 25°C_(see Figure 17)_||1660<br>4438<br>6098||µJ<br>µJ<br>µJ|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 960V, IC= 20A<br>RG= 10Ω, VGE= 15V,<br>Tj= 125°C_(see Figure 17)_||3015<br>6900<br>9915||µJ<br>µJ<br>µJ|



1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 

2. Turn-off losses include also the tail of the collector current 

## **Table 8. Collector-emitter diode** 

|**Table 8.**|**Collector-emitter diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Vf|Forward on-voltage|If = 20A, Tj = 25°C<br>If = 20A, Tj = 125°C||1.9<br>1.7|2.5|V<br>V|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|If = 20A, VR= 27V,<br>Tj= 125°C, di/dt = 100A/µs<br>_(see Figure 20)_||152<br>722<br>9||ns<br>nC<br>A|



5/13 

**STGW30NC120HD** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Output characteristics** 

## **Figure 3. Transfer characteristics** 

**==> picture [156 x 151] intentionally omitted <==**

**==> picture [155 x 154] intentionally omitted <==**

**Figure 4. Transconductance** 

**==> picture [164 x 157] intentionally omitted <==**

**Figure 6. Gate charge vs. gate-source voltage** 

**==> picture [166 x 151] intentionally omitted <==**

**Figure 5. Collector-emitter on voltage vs. temperature** 

**==> picture [164 x 151] intentionally omitted <==**

**Figure 7. Capacitance variations** 

**==> picture [164 x 155] intentionally omitted <==**

6/13 

**STGW30NC120HD** 

**Electrical characteristics** 

**Figure 8. Normalized gate threshold Figure 9. Collector-emitter on voltage voltage vs. temperature vs. collector current** 

**==> picture [164 x 150] intentionally omitted <==**

**==> picture [164 x 152] intentionally omitted <==**

**Figure 10. Normalized breakdown Figure 11. Switching losses vs. voltage vs. temperature temperature** 

**==> picture [164 x 154] intentionally omitted <==**

**==> picture [164 x 157] intentionally omitted <==**

**Figure 12. Switching losses vs. gate Figure 13. Switching losses vs. collector resistance current** 

**==> picture [164 x 155] intentionally omitted <==**

**==> picture [164 x 156] intentionally omitted <==**

7/13 

**STGW30NC120HD** 

**Electrical characteristics** 

**Figure 14. Thermal Impedance** 

**==> picture [158 x 153] intentionally omitted <==**

## **Figure 15. Turn-off SOA** 

**==> picture [155 x 155] intentionally omitted <==**

**Figure 16. Emitter-collector diode characteristics** 

**==> picture [164 x 151] intentionally omitted <==**

8/13 

**STGW30NC120HD** 

**Test circuit** 

## **3 Test circuit** 

**Figure 17. Test circuit for inductive load switching** 

**==> picture [197 x 137] intentionally omitted <==**

**Figure 19. Switching waveform** 

**==> picture [216 x 82] intentionally omitted <==**

**Figure 18. Gate charge test circuit** 

**==> picture [199 x 137] intentionally omitted <==**

**Figure 20. Diode recovery time waveform** 

**==> picture [201 x 131] intentionally omitted <==**

9/13 

**STGW30NC120HD** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

10/13 

**STGW30NC120HD** 

**Package mechanical data** 

## **TO-247 MECHANICAL DATA** 

|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.85||5.15|0.19||0.20|
|A1|2.20||2.60|0.086||0.102|
|b|1.0||1.40|0.039||0.055|
|b1|2.0||2.40|0.079||0.094|
|b2|3.0||3.40|0.118||0.134|
|c|0.40||0.80|0.015||0.03|
|D|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e||5.45|||0.214||
|L|14.20||14.80|0.560||0.582|
|L1|3.70||4.30|0.14||0.17|
|L2||18.50|||0.728||
|øP|3.55||3.65|0.140||0.143|
|øR|4.50||5.50|0.177||0.216|
|S||5.50|||0.216||
||||||||



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11/13 

**STGW30NC120HD** 

**Revision history** 

## **5 Revision history** 

**Table 9.** 

## **Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|23-Nov-2005|1|First issue.|
|17-Mar-2006|2|Complete version|
|05-May-2006|3|Modified value on_Table 2.: Absolute maximum ratings_|
|30-May-2006|4|New values on_Table 3: Thermal resistance_|
|23-Jun-2006|5|Modified value on_Table 4.: Static_|
|07-Sep-2006|6|Modified TJtemperature range to 150**°**C in<br>_Table 2.: Absolute maximum ratings_|
|14-Nov-2006|7|Modified_Figure 5._and_Figure 9._|
|26-Jan-2007|8|Typing error on first page.|
|04-Oct-2007|9|Modified test conditions in_Table 4.: Static_|



12/13 

**STGW30NC120HD** 

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