# IGBT, 50 A, 1.6 V, 375 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2476592/)

**URL**: https://novapart.co/products/STGW25S120DF3/igbt-50-a-16-v-375-w-12-kv-to-247-3-pins
**SKU**: STGW25S120DF3
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €5.2100
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2476592/)

**STGW25S120DF3, STGWA25S120DF3** Trench gate field-stop IGBT, S series 1200 V, 25 A low drop 

**Datasheet** - **production data** 

## **Features** 

- 10 µs of short-circuit withstand time 

- VCE(sat) = 1.6 V (typ.) @ IC = 25 A 

- Tight parameter distribution 

- Safer paralleling 

- Low thermal resistance 

- Soft and fast recovery antiparallel diode 

## **Applications** 

- Industrial drives 

- UPS 

## **Figure 1. Internal schematic diagram** 

- Solar 

- Welding 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGW25S120DF3|G25S120DF3|TO-247|Tube|
|STGWA25S120DF3|G25S120DF3|TO-247 long leads|Tube|



_www.st.com_ 

December 2014 

DocID026374 Rev 2 

1/18 

This is information on a product in full production. 

**Contents** 

**STGW25S120DF3, STGWA25S120DF3** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**4**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
||4.1<br>TO-247, STGW25S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||4.2<br>TO-247 long leads, STGWA25S120DF3  . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current at TC= 25 °C|50|A|
|IC|Continuous collector current at TC= 100 °C|25|A|
|ICP<br>(1)|Pulsed collector current|100|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|50|A|
|IF|Continuous forward current at TC= 100 °C|25|A|
|IFP<br>(1)|Pulsed forward current|100|A|
|PTOT|Total dissipation at TC= 25 °C|375|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature|- 55 to 175|°C|



1. Pulse width limited by maximum junction temperature. 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case IGBT|0.4|°C/W|
|RthJC|Thermal resistance junction-case diode|0.96|°C/W|
|RthJA|Thermal resistance junction-ambient|50|°C/W|



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**STGW25S120DF3, STGWA25S120DF3** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## TJ = 25 °C unless otherwise specified 

**Table 4. Static characteristics** 

||**Table**|**4. Static characteristics**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)CES|Collector-emitter<br>breakdown voltage<br>(VGE= 0)|IC= 2 mA|1200|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 25 A||1.6|2.1|V|
|||VGE= 15 V, IC= 25 A,<br>TJ= 125 °C||1.8|||
|||VGE= 15 V, IC= 25 A<br>TJ= 175 °C||1.9|||
|VF|Forward on-voltage|IF= 25 A||2.95|4.1|V|
|||IF= 25 A TJ= 125 °C||2.25||V|
|||IF= 25 A TJ= 175 °C||1.9||V|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current<br>(VGE= 0)|VCE= 1200 V|||25|µA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE= ± 20 V|||250|nA|



**Table 5. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0|-|1600|-|pF|
|Coes|Output capacitance||-|125|-|pF|
|Cres|Reverse transfer<br>capacitance||-|61|-|pF|
|Qg|Total gate charge|VCC= 960 V, IC=25 A,<br>VGE= 15 V, see_Figure 30_|-|80|-|nC|
|Qge|Gate-emitter charge||-|11|-|nC|
|Qgc|Gate-collector charge||-|44|-|nC|



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**Electrical characteristics** 

**Table 6. IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|_VCE = 600 V, IC =_25_A,_<br>_VGE = 15 V, R_G_= 15_Ω<br>_seeFigure 29_|-|31|-|ns|
|tr|Current rise time||-|11.8|-|ns|
|(di/dt)on|Turn-on current slope||-|1661|-|A/µs|
|td(off)|Turn-off delay time||-|147|-|ns|
|tf|Current fall time||-|269|-|ns|
|Eon<br>(1)|Turn-on switching losses||-|0.83|-|mJ|
|Eoff<br>(2)|Turn-off switching losses||-|2.37|-|mJ|
|Ets|Total switching losses||-|3.2|-|mJ|
|td(on)|Turn-on delay time|_VCE = 600 V, IC =_25_A,_<br>_R_G_= 15_Ω,_VGE = 15 V,_<br>TJ= 175 °C, see_Figure 29_|-|28|-|ns|
|tr|Current rise time||-|15|-|ns|
|(di/dt)on|Turn-on current slope||-|1360|-|A/µs|
|td(off)|Turn-off delay time||-|156|-|ns|
|tf|Current fall time||-|437|-|ns|
|Eon<br>(1)|Turn-on switching losses||-|1.52|-|mJ|
|Eoff<br>(2)|Turn-off switching losses||-|3.36|-|mJ|
|Ets|Total switching losses||-|4.88|-|mJ|
|tsc|Short-circuit withstand time|VCC ≤ 600V, VGE= 15V, TJstart<br>≤150°C, VP< 1200V|10||-|µs|



1. Energy losses include reverse recovery of the diode. 

2. Turn-off losses also include the tail of the collector current. 

**Table 7. Diode switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recovery time|IF= 25 A, VR= 600 V,<br>VGE= 15 V,<br>di/dt = 1000 A/µs,<br>(see_Figure 29_)|-|265|-|ns|
|Qrr|Reverse recovery charge||-|1200|-|nC|
|Irrm|Reverse recovery current||-|19|-|A|
|dlrr//dt|Peak rate of fall of reverse<br>recovery current during tb||-|1090|-|A/µs|
|Err|Reverse recovery energy||-|0.22|-|mJ|
|trr|Reverse recovery time|IF= 25 A, VR= 600 V,<br>_V_GE = 15 V, TJ= 175 °C,<br>di/dt = 1000 A/µs,<br>(see_Figure 29_)|-|584|-|ns|
|Qrr|Reverse recovery charge||-|5000|-|nC|
|Irrm|Reverse recovery current||-|30|-|A|
|dIrr//dt|Peak rate of fall of reverse<br>recovery current during tb||-|270|-|A/µs|
|Err|Reverse recovery energy||-|0.75|-|mJ|



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**STGW25S120DF3, STGWA25S120DF3** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Power dissipation vs. case temperature** 

**Figure 3. Collector current vs. case temperature** 

**Figure 4. Output characteristics (TJ = 25** ° **C)** 

**Figure 5. Output characteristics (TJ = 175** ° **C)** 

**Figure 6. VCE(sat) vs. junction temperature** VcE(SAT) ~~GIPG101220141245LM~~ 

**Figure 7. VCE(sat) vs. collector current** VcE(SAr) ~~GIPG101220141232L~~ 

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**Electrical characteristics** 

**Figure 8. Collector current vs. switching frequency** 

**Figure 10. Transfer characteristics** 

**Figure 12. Normalized VGE(th) vs. junction temperature** 

**Figure 9. Forward bias safe operating area** 

**Figure 11. Diode VF vs. forward current** 

**Figure 13. Normalized VBR(CES) vs. junction temperature** 

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**Electrical characteristics** 

**Figure 14. Capacitance variations** 

**Figure 16. Switching loss vs. collector current** 

**Figure 18. Switching loss vs. temperature** 

**Figure 15. Gate charge vs. gate-emitter voltage** 

**Figure 17. Switching loss vs. gate resistance** 

**Figure 19. Switching loss vs. collector emitter voltage** 

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**Electrical characteristics** 

**Figure 20. Short-circuit time and current vs VGE Figure 21. Switching times vs. collector current** 

**Figure 22. Switching times vs. gate resistance** 

**Figure 23. Reverse recovery current vs. diode current slope** 

**Figure 24. Reverse recovery time vs. diode current slope** 

**Figure 25. Reverse recovery charge vs. diode current slope** 

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**STGW25S120DF3, STGWA25S120DF3** 

**Electrical characteristics** 

**Figure 26. Reverse recovery energy vs. diode current slope** 

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**Electrical characteristics** 

**Figure 27. Thermal impedance for IGBT** 

## **Figure 28. Thermal impedance for diode** 

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**STGW25S120DF3, STGWA25S120DF3** 

**Test circuits** 

## **3 Test circuits** 

**==> picture [462 x 371] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 29. Test circuit for inductive load  Figure 30. Gate charge test circuit<br>switching<br>AM01504v1 AM01505v1<br>Figure 31. Switching waveform Figure 32. Diode reverse recovery waveform<br>90% di/dt Qrr<br>VG 10% IF trr<br>90% ts tf<br>VCE Tr(Voff) 10%<br>Tcross t<br>10% IRRM<br>90%<br>IRRM<br>IC Td(on)Ton Tr(Ion) Td(offToff) Tf 10% VRRM<br>dv/dt<br>AM01506v1 AM01507v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO-247, STGW25S120DF3** 

**==> picture [120 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 33. TO-247 outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 8. TO-247 mechanical data** 

||**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|**Table 8. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Package information** 

## **4.2 TO-247 long leads, STGWA25S120DF3** 

**==> picture [167 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 34. TO-247 long lead outline<br>**----- End of picture text -----**<br>


**==> picture [405 x 491] intentionally omitted <==**

**----- Start of picture text -----**<br>
8463846_A_F<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 9. TO-247 long leads mechanical data** 

||**Table 9. TO-247 long leads mechanical data**|**Table 9. TO-247 long leads mechanical data**|**Table 9. TO-247 long leads mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.26|
|b2|||3.25|
|b3|||2.25|
|c|0.59||0.66|
|D|20.90|21.00|21.10|
|E|15.70|15.80|15.90|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|5.34|5.44|5.54|
|L|19.80|19.92|20.10|
|L1|||4.30|
|P|3.50|3.60|3.70|
|Q|5.60||6.00|
|S|6.05|6.15|6.25|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-May-2014|1|Initial release.|
|18-Dec-2014|2|Updated_Section 1: Electrical ratings_and_Section 2: Electrical_<br>_characteristics_.<br>Inserted_Section 2.1: Electrical characteristics (curves)_.<br>Updated_Section 4: Package information_.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

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