# IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:9512535/)

**URL**: https://novapart.co/products/STGW20NC60VD/igbt-60-a-25-v-200-w-600-to-247-3-pins
**SKU**: STGW20NC60VD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4500
**Stock**: 25+
**Lead Time**: 132 days (indicative)

## Description

DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; O

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9512535/)

30 A, 600 V, very fast IGBT 

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## **STGW20NC60VD** 

## **Features** 

- High current capability 

- High frequency operation up to 50 KHz 

- Very soft ultra fast recovery antiparallel diode 

## **Description** 

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 

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**----- Start of picture text -----**<br>
1  [23]<br>TO-247<br>**----- End of picture text -----**<br>


## **Applications** 

- High frequency inverters, UPS 

- Motor drive 

- SMPS and PFC in both hard switch and resonant topologies 

## **Figure 1. Internal schematic diagram** 

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## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGW20NC60VD|GW20NC60VD|TO-247|Tube|



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**STGW20NC60VD** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)           . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**STGW20NC60VD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VGE= 0)|600|V|
|IC<br>(1)|Continuous collector current at Tc= 25°C|60|A|
|IC<br>(1)|Continuous collector current at Tc= 100°C|30|A|
|ICP<br>(2)|Pulsed collector current|150|A|
|ICL<br>(3)|Turn-off latching current|100|A|
|VGE|Gate-emitter voltage|± 20|V|
|IF|Diode RMS forward current at Tc=25°C|30|A|
|IFSM|Surge not repetitive forward current<br>tp = 10 ms sinusoidal|120|A|
|PTOT|Total dissipation at TC= 25°C|200|W|
|Tj|Operating junction temperature|– 55 to 150|°C|
|Tstg|Storage temperature|||
|1.<br>Calculated according to the iterative formula:||||



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**----- Start of picture text -----**<br>
IC(TC) = ----------------------------------------------------------------------------------------------------------Tj(max) – TC<br>Rthj – c × VCE(sat)(max)( [T] j(max), [I] C( [T] C))<br>**----- End of picture text -----**<br>


2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. 

3. Vclamp = 80 % VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V. 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case IGBT|0.63|°C/W|
||Thermal resistance junction-case diode|1.5|°C/W|
|Rthj-amb|Thermal resistance junction-ambient|50|°C/W|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tj =25°C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)CES|Collector-emitter breakdown<br>voltage (VGE= 0)|IC= 1 mA|600|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE=15 V, IC=20 A<br>VGE=15 V, IC=20 A,Tj=125 °C||1.8<br>1.7|2.5|V<br>V|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250 µA|3.75||5.75|V|
|ICES|Collector-cut-off current<br>(VGE= 0)|VCE= 600 V<br>VCE=600 V, Tj= 125 °C|||250<br>1|µA<br>mA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE= ± 20V|||±100|nA|
|gfs|Forward transconductance|VCE= 15 V,IC= 20 A||15||S|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25V, f = 1 MHz, VGE= 0|-|2200<br>225<br>50||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 390V, IC= 20A,<br>VGE= 15V,<br>_(see Figure 18)_|-|100<br>16<br>45|140|nC<br>nC<br>nC|



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**Electrical characteristics** 

**Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)onf|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15V<br>_(see Figure 17)_|-|31<br>11<br>1600|-|ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15 V<br>Tj=125°C_(see Figure 17)_|-|31<br>11.5<br>1500|-|ns<br>ns<br>A/µs|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15 V<br>_(see Figure 17)_|-|28<br>100<br>75|-|ns<br>ns<br>ns|
|tr(Voff)<br>td(off)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15 V<br>Tj=125°C_(see Figure 17)_|-|66<br>150<br>130|-|ns<br>ns<br>ns|



## **Table 7. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>(1)<br>Eoff<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15 V,<br>_(see Figure 19)_|-|220<br>330<br>550|300<br>450<br>750|µJ<br>µJ<br>µJ|
|Eon<br>(1)<br>Eoff<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC=390 V, IC= 20 A,<br>RG=3.3Ω,VGE=15 V,<br>Tj= 125°C<br>_(see Figure 19)_|-|450<br>770<br>1220||µJ<br>µJ<br>µJ|



1. Eon is the turn-on losses when a typical diode is used in the test circuit in _Figure 19_ . Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C). 

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**Electrical characteristics** 

**Table 8. Collector-emitter diode** 

|**Table 8.**|**Collector-emitter diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|VF|Forward on-voltage|IF= 20 A<br>IF= 20 A, Tj= 125°C|-|2<br>1.6|-|V<br>V|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 20 A, VR= 40 V,<br>Tj= 25°C, di/dt =100 A/µs<br>_(see Figure 20)_|-|44<br>66<br>3|-|ns<br>nC<br>A|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|IF= 2 0A, VR= 40 V,<br>Tj= 125°C,<br>di/dt =100 A/µs<br>_(see Figure 20)_|-|88<br>237<br>5.4|-|ns<br>nC<br>A|



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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Output characteristics** 

**Figure 3. Transfer characteristics** 

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## **Figure 4. Transconductance** 

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**Figure 6. Collector-emitter on voltage vs collector current** 

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**Figure 5. Collector-emitter on voltage vs temperature** 

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**Figure 7. Normalized gate threshold vs temperature** 

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**Electrical characteristics** 

**Figure 8. Normalized breakdown voltage vs Figure 9. Gate charge vs gate-emitter voltage temperature** 

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**Figure 10. Capacitance variations** 

**Figure 11. Switching losses vs temperature** 

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**Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector** 

**current** 

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**Electrical characteristics** 

## **Figure 14. Thermal impedance** 

## **Figure 15. Turn-off SOA** 

## **Figure 16. Emitter-collector diode characteristics** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 17. Test circuit for inductive load switching** 

**Figure 18. Gate charge test circuit** 

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**Figure 19. Switching waveforms** 

**Figure 20. Diode recovery times waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-247 mechanical data** 

|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|
|---|---|---|---|
|||||
|||||
|**Dim.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|||
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|øP|3.55||3.65|
|øR|4.50||5.50|
|S||5.50||



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**Revision history** 

## **5 Revision history** 

|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|12-Jul-2004|4|Stylesheet updated.<br>Added switching losses maximum values in_Table 7: Switching_<br>_energy (inductive load)_.<br>Inserted_Figure 20: Diode recovery times waveform_.|
|09-Mar-2010|5|Inserted IFSMparameter on_Table 2: Absolute maximum_<br>_ratings_.<br>Updated_Figure 16: Emitter-collector diode characteristics_and<br>package mechanical data.<br>Minor text changes to improve readability.|



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