# IGBT, 145 A, 1.55 V, 441 W, 650 V, TO-247, 4 Pins

![Product image](https://novapart.co/image/farnell:3581058/)

**URL**: https://novapart.co/products/STGW100H65FB2-4/igbt-145-a-155-v-441-w-650-to-247-4-pins
**SKU**: STGW100H65FB2-4
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.6400
**Stock**: 25+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | HB2 |
| Power Dissipation | 441W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 145A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3581058/)

**STGW100H65FB2-4** 

Datasheet 

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package 

**==> picture [55 x 51] intentionally omitted <==**

## **Features** 

- Maximum junction temperature: TJ = 175 °C 

- Low VCE(sat) = 1.55 V(typ.) @ IC = 100 A 

- Minimized tail current 

- Tight parameter distribution 

**==> picture [126 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 [34]<br>1<br>TO247-4<br>C(1,TAB)<br>G(4)<br>K(3)<br>E(2)<br>NG4K3E2C1TAB_no_diode<br>**----- End of picture text -----**<br>


- Low thermal resistance 

- Positive VCE(sat) temperature coefficient 

- Excellent switching performance thanks to the extra driving kelvin pin 

## **Applications** 

- Welding 

- Power factor correction 

- UPS 

- Solar inverters 

- Chargers 

## **Description** 

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. 

## **Product status link** 

STGW100H65FB2-4 

## **Product summary** 

|**Product summary**|**Product summary**|
|---|---|
|**Order code**|STGW100H65FB2-4|
|**Marking**|G100H65FB2|
|**Package**|TO247-4|
|**Packing**|Tube|



**DS13447** - **Rev 2** - **September 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STGW100H65FB2-4 Electrical ratings** 

**1 Electrical ratings** 

**Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|145|A|
||Continuous collector current at TC= 100 °C|91||
|ICP(1)|Pulsed collector current (tp≤ 1 μs, TJ< 175 °C)|300||
|VGE|Gate-emitter voltage|±20|V|
||Transient gate-emitter voltage (tp≤ 10 μs)|±30||
|PTOT|Total power dissipation at TC= 25 °C|441|W|
|TSTG|Storage temperature range|-55 to 150|°C|
|TJ|Operating junction temperature range|-55 to 175||



_1. Defined by design, not subject to production test._ 

**Table 2. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistance junction-case|0.34|°C/W|
|RthJA|Thermal resistance junction-ambient|50||



**DS13447** - **Rev 2** 

**page 2/14** 

**STGW100H65FB2-4 Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 3. Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 1 mA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 100 A||1.55|2|V|
|||VGE= 15 V, IC= 100 A,<br>TJ= 125 °C||1.8|||
|||VGE= 15 V, IC= 100 A,<br>TJ= 175 °C||1.9|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|nA|



**Table 4. Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V|-|6227|-|pF|
|Coes|Output capacitance||-|318|-||
|Cres|Reverse transfer capacitance||-|165|-||
|Qg|Total gate charge|VCC= 520 V, IC= 100 A,<br>VGE= 0 to 15 V<br>(seeFigure 22.  Gate charge test<br>circuit)|-|288|-|nC|
|Qge|Gate-emitter charge||-|48|-||
|Qgc|Gate-collector charge||-|120|-||



**DS13447** - **Rev 2** 

**page 3/14** 

**STGW100H65FB2-4 Electrical characteristics** 

**Table 5. Switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VCC= 400 V, IC= 100 A,<br>VGK= 15 V, RG(on)= 8.2 Ω,<br>RG(off)= 3.3 Ω<br>(seeFigure 21.  Test circuit for<br>inductive load switching)|-|23|-|ns|
|tr|Current rise time||-|28|-|ns|
|Eon(1)|Turn-on switching energy||-|1059|-|μJ|
|td(off)|Turn-off delay time||-|141|-|ns|
|tf|Current fall time||-|13|-|ns|
|Eoff(2)|Turn-off switching energy||-|1137|-|µJ|
|td(on)|Turn-on delay time|VCC= 400 V, IC= 100 A,<br>VGK= 15 V, RG(on)= 8.2 Ω,<br>RG(off)= 3.3 Ω,<br>TJ= 175 °C<br>(seeFigure 21.  Test circuit for<br>inductive load switching)|-|19|-|ns|
|tr|Current rise time||-|30|-|ns|
|Eon(1)|Turn-on switching energy||-|2061|-|μJ|
|td(off)|Turn-off delay time||-|176|-|ns|
|tf|Current fall time||-|79|-|ns|
|Eoff (2)|Turn-off switching energy||-|2154|-|µJ|



_1. Including the reverse recovery of the diode. The diode is the same of the co-packed STGWA100H65DFB2._ 

_2. Including the tail of the collector current._ 

**DS13447** - **Rev 2** 

**page 4/14** 

**STGW100H65FB2-4 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Power dissipation vs case temperature Figure 2. Collector current vs case temperature** 

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**----- Start of picture text -----**<br>
PTOT GADG050320201002PDT IC GADG050320201002CCT<br>(W)  (A)<br>400<br>150<br>350<br>300 120<br>250<br>90<br>200<br>150 60<br>100<br>30<br>50 V GE  ≥ 15 V, T J  ≤ 175 °C VGE ≥ 15 V, TJ ≤ 175 °C<br>0 0<br>25 75 125 175 TC (°C) 25 75 125 175 TC (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 3. Output characteristics (TJ = 25 °C) Figure 4. Output characteristics (TJ = 175 °C)<br>IC GADG050320201003OC25 IC GADG050320201003OC175<br>(A)  VGE = 15 V 13 V (A)  VGE = 15 V 13 V<br>11 V<br>250 250<br>11 V<br>9 V<br>200 200<br>9 V<br>150 150<br>100 100<br>7 V<br>50 50<br>7 V<br>0 0<br>0 1 2 3 4 5 VCE (V) 0 1 2 3 4 5 VCE (V)<br>Figure 5. VCE(sat) vs junction temperature Figure 6. VCE(sat) vs collector current<br>VCE(SAT) GADG050320201004VCET VCE(SAT) GADG050320201004VCEC<br>(V)  (V)<br>2.7 VGE = 15 V 3.6 VGE = 15V<br>IC = 200 A 3.2 TJ = 175°C<br>2.3 2.8<br>1.9 IC = 100 A 2.4 TJ = 25°C<br>2.0<br>1.5 1.6 TJ = -40°C<br>IC = 50 A 1.2<br>1.1<br>0.8<br>0.7 0.4<br>-50 0 50 100 150 TJ (°C) 0 50 100 150 200 250 IC (A)<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 5/14** 

**STGW100H65FB2-4 Electrical characteristics (curves)** 

**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Collector current vs switching frequency Figure 8. Forward bias safe operating area<br>IC GADG050320201016CCS IC GADG050320201005FSOA<br>(A)  (A)<br>160<br>140<br>120 10  [2 ]<br>100 TC = 80 °C<br>80 TC = 100 °C<br>60 10  [1 ]<br>40<br>20 Rectangular current shape  Single pulse t P  =1µs<br>0 (RG = 2.2 Ω, VGE = 0/15 V , TJ = 175 °C)duty cycle = 0.5, VCC = 400 V, 10  [0 ] TC =25°C, TJ ≤175°C,VGE =15V<br>10  [0 ] 10  [1 ] 10  [2 ] f (kHz) 10  [0 ] 10  [1 ] 10  [2 ] VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Transfer characteristics Figure 10. Normalized VGE(th) vs junction temperature<br>IC GADG050320201005TCH VGE(th) IGBT090420181403NVGE<br>(A)  (norm.)<br>VCE =6 V<br>250 1.1<br>VCE=VGE<br>200 1.0<br>IC=1mA<br>150 0.9<br>TJ =175°C<br>100 0.8<br>TJ =25°C<br>50 0.7<br>0 0.6<br>4 6 8 10 12 VGE (V) -50 0 50 100 150 TJ (°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 11. Normalized V(BR)CES vs junction temperature Figure 12. Capacitance variations<br>V(BR)CES IGBT090420181404NVBR C  GADG050320201006CVR<br>(norm.) (pF)<br>f=1MHz<br>1.08<br>10  [4 ]<br>CIES<br>IC =1mA<br>1.04<br>10  [3 ]<br>1.00<br>10  [2 ] COES<br>0.96<br>CRES<br>0.92 10  [1 ]<br>-50 0 50 100 150 TJ (°C) 10  [-1 ] 10  [0 ] 10  [1 ] 10  [2 ] VCE (V)<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 6/14** 

**STGW100H65FB2-4 Electrical characteristics (curves)** 

**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Gate charge vs gate-emitter voltage Figure 14. Switching energy vs collector current<br>VGE GADG050320201007GCGE E  GADG210820201152SLC<br>(V)  VCC = 520V, IC = 100A, IG = 12mA (mJ)  VCC = 400V, RGon = 8.2Ω,<br>RGoff = 3.3Ω, VGK = 15V, TJ = 175°C<br>15<br>8<br>12 Etot<br>6<br>9<br>Eoff<br>4<br>6<br>Eon<br>2<br>3<br>0 0<br>0 50 100 150 200 250 300 Qg (nC) 0 50 100 150 IC (A)<br>**----- End of picture text -----**<br>


**==> picture [513 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 15. Switching energy vs temperature Figure 16. Switching energy vs collector emitter voltage<br>E  GADG210820201153SLT E  GADG210820201154SLV<br>(mJ)  VCC = 400V, IC = 100A, (mJ)  IC = 100A, RGon = 8.2Ω,<br>4.0 RGon = 8.2Ω, RGoff = 3.3Ω, R Goff  = 3.3Ω, V GK  = 15V, T J  = 175°C<br>VGK = 15V 5.5<br>3.5<br>4.5<br>3.0<br>Etot Etot<br>3.5<br>2.5<br>2.5<br>2.0<br>Eoff Eoff<br>1.5<br>1.5<br>Eon<br>1.0 0.5 Eon<br>0 50 100 150 TJ (°C) 150 250 350 450 VCE (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 17. Switching energy vs gate resistance Figure 18. Switching times vs collector current<br>E  GADG210820201155SLG t  GADG210820201156STC<br>(mJ)  IC = 100A, VCC = 400V, (ns)<br>VGK = 15V, TJ = 175°C<br>7<br>td(off)<br>6<br>10  [2 ]<br>Etot tf<br>5<br>t r<br>4<br>td(on)<br>10  [1 ]<br>3<br>Eoff<br>2<br>Eon VCC = 400V, VGK = 15V,<br>RGon = 8.2Ω, RGoff = 3.3Ω, TJ = 175°C<br>1 10  [0 ]<br>0 5 10 15 20 RG (Ω) 0 50 100 150 IC (A)<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 7/14** 

**STGW100H65FB2-4 Electrical characteristics (curves)** 

**==> picture [195 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Switching times vs gate resistance<br>t  GADG210820201156STR<br>(ns)<br>td(off)<br>10  [2 ]<br>tf<br>tr<br>VCC = 400V, VGK = 15V,<br>10  [1 ] td(on) IC = 100A, TJ = 175°C<br>0 5 10 15 20 RG (Ω)<br>**----- End of picture text -----**<br>


## **Figure 20. Thermal impedance** 

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**----- Start of picture text -----**<br>
ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>10-1<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>10-2<br>10-5 10-4 10-3 10-2 10-1 tp [(s)]<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 8/14** 

**STGW100H65FB2-4 Test circuits** 

## **3 Test circuits** 

**==> picture [513 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 21.  Test circuit for inductive load switching Figure 22.  Gate charge test circuit<br>A A<br>C<br>L=100 μH<br>G<br>E B<br>B<br>C 3.3μF 1000μF VCC<br>G D.U.T<br>RG<br>K E<br>GND1 GND2<br>(signal ground) (power ground) HB650_4_leads GADG030820201115SA<br>**----- End of picture text -----**<br>


**Figure 23.  Switching waveform** 

**==> picture [226 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
90%<br>VG 10%<br>90%<br>VCE tr(Voff) 10%<br>tcross<br>90%<br>IC td(on)ton tr(Ion) td(off)toff tf 10%<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
AM01506v1<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 9/14** 

**STGW100H65FB2-4 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **4.1 TO247-4 package information** 

**Figure 24. TO247-4 package outline** 

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**==> picture [31 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
8405626_2<br>**----- End of picture text -----**<br>


**DS13447** - **Rev 2** 

**page 10/14** 

**STGW100H65FB2-4 TO247-4 package information** 

**Table 6. TO247-4 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.90|5.00|5.10|
|A1|2.31|2.41|2.51|
|A2|1.90|2.00|2.10|
|b|1.16||1.29|
|b1|1.15|1.20|1.25|
|b2|0||0.20|
|c|0.59||0.66|
|c1|0.58|0.60|0.62|
|D|20.90|21.00|21.10|
|D1|16.25|16.55|16.85|
|D2|1.05|1.20|1.35|
|D3|24.97|25.12|25.27|
|E|15.70|15.80|15.90|
|E1|13.10|13.30|13.50|
|E2|4.90|5.00|5.10|
|E3|2.40|2.50|2.60|
|e|2.44|2.54|2.64|
|e1|4.98|5.08|5.18|
|L|19.80|19.92|20.10|
|P|3.50|3.60|3.70|
|P1|||7.40|
|P2|2.40|2.50|2.60|
|Q|5.60||6.00|
|S||6.15||
|T|9.80||10.20|
|U|6.00||6.40|



**DS13447** - **Rev 2** 

**page 11/14** 

**STGW100H65FB2-4** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|09-Sep-2020|1|First release.|
|10-Sep-2020|2|Updated product status link in cover page.|



**DS13447** - **Rev 2** 

**page 12/14** 

**STGW100H65FB2-4 Contents** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|---|---|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**|
||**4.1**<br>TO247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12**||



**DS13447** - **Rev 2** 

**page 13/14** 

**STGW100H65FB2-4** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS13447** - **Rev 2** 

**page 14/14** 



## Links

- [View this product on Novapart](https://novapart.co/products/STGW100H65FB2-4/igbt-145-a-155-v-441-w-650-to-247-4-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgw100h65fb2-4/igbt-650v-145a-to-247/dp/3581058)
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