# IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2490223/)

**URL**: https://novapart.co/products/STGP10M65DF2/igbt-20-a-155-v-115-w-650-to-220-3-pins
**SKU**: STGP10M65DF2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.5680
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:115W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 115W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2490223/)

## **STGP10M65DF2** 

## Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package 

Datasheet - production data 

## **Features** 

- 6 µs of short-circuit withstand time 

**==> picture [102 x 91] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>1  [23]<br>TO-220<br>**----- End of picture text -----**<br>


- VCE(sat) = 1.55 V (typ.) @ IC = 10 A 

- Tight parameter distribution 

- Safer paralleling 

- Positive VCE(sat) temperature coefficient 

- Low thermal resistance 

- Soft and very fast recovery antiparallel diode 

- Maximum junction temperature: TJ = 175 °C 

## **Applications** 

- Motor control 

**Figure 1: Internal schematic diagram** 

- UPS 

- PFC 

- General purpose inverter 

## **Description** 

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGP10M65DF2|G10M65DF2|TO-220|Tube|



_www.st.com_ 

April 2017 DocID027352 Rev 5 This is information on a product in full production. 

1/17 

|**Contents**<br>**STGP10M65DF2**|**Contents**<br>**STGP10M65DF2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ................................................................................... 12**|
|**4**|**Package information ..................................................................... 13**|
||4.1<br>TO-220 type A package information ................................................ 14|
|**5**|**Revision history ............................................................................ 16**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0 V)|650|V|
|IC|Continuous collector current at TC= 25 °C|20|A|
||Continuous collector current at TC= 100 °C|10||
|ICP_(1)_|Pulsed collector current|40|A|
|VGE|Gate-emitter voltage|±20|V|
|IF|Continuous forward current at TC= 25 °C|20|A|
||Continuous forward current at TC= 100 °C|10||
|IFP_(1)_|Pulsed forward current|40|A|
|PTOT|Total dissipation at TC= 25 °C|115|W|
|TSTG|Storage temperature range|- 55 to 150|°C|
|TJ|Operating junction temperature range|- 55 to 175||



## **Notes:** 

(1)Pulse width limited by maximum junction temperature. 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJC|Thermal resistancejunction-case IGBT|1.3|°C/W|
|RthJC|Thermal resistancejunction-case diode|2.08||
|RthJA|Thermal resistance junction-ambient|62.5||



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**STGP10M65DF2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

## **Table 4: Static characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 250 μA|650|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 10 A||1.55|2.0|V|
|||VGE= 15 V, IC= 10 A,<br>TJ= 125 °C||1.9|||
|||VGE= 15 V, IC= 10 A,<br>TJ= 175 °C||2.1|||
|VF|Forward on-voltage|IF= 10 A||1.5|2.25|V|
|||IF= 10 A, TJ= 125 °C||1.3|||
|||IF= 10 A, TJ= 175 °C||1.2|||
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250µA|5|6|7|V|
|ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA|
|IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±250|µA|



**Table 5: Dynamic characteristics** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Cies|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V|-|840|-|pF|
|Coes|||-|63|-||
|Cres|||-|16|-||
|Qg|Totalgate charge<br>Gate-emitter charge<br>Gate-collector charge|VCC= 520 V, IC= 10 A,<br>VGE= 0 to 15 V<br>(see_Figure 30: " Gate charge_<br>_test circuit"_)|-|28|-|nC|
|Qge|||-|6|-||
|Qgc|||-|12|-||



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**STGP10M65DF2** 

**Electrical characteristics** 

**Table 6: IGBT switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 10 A,<br>VGE= 15 V, RG= 22 Ω<br>(see_Figure 29: " Test circuit_<br>_for inductive load switching"_)||19|-|ns|
|tr|Current rise time|||7.4|-|ns|
|(di/dt)on|Turn-on current slope|||1086|-|A/µs|
|td(off)|Turn-off-delaytime|||91|-|ns|
|tf|Current fall time|||92|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.12|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.27|-|mJ|
|Ets|Total switchingenergy|||0.39|-|mJ|
|td(on)|Turn-on delaytime|VCE= 400 V, IC= 10 A,<br>VGE= 15 V, RG= 22 Ω,<br>TJ= 175 °C<br>(see_Figure 29: " Test circuit_<br>_for inductive load switching"_)||18|-|ns|
|tr|Current rise time|||9|-|ns|
|(di/dt)on|Turn-on current slope|||890|-|A/µs|
|td(off)|Turn-off-delaytime|||90|-|ns|
|tf|Current fall time|||170|-|ns|
|Eon_(1)_|Turn-on switchingenergy|||0.26|-|mJ|
|Eoff_(2)_|Turn-off switchingenergy|||0.4|-|mJ|
|Ets|Total switchingenergy|||0.66|-|mJ|
|tsc|Short-circuit withstand time|VCC≤ 400 V, VGE= 13 V,<br>TJstart= 150 °C|10||-|µs|
|||VCC≤ 400 V, VGE= 15 V,<br>TJstart= 150 °C|6||-|µs|



## **Notes:** 

(1)Including the reverse recovery of the diode. 

(2)Including the tail of the collector current. 

**Table 7: Diode switching characteristics (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|trr|Reverse recoverytime|IF= 10 A, VR= 400 V,<br>VGE= 15 V,<br>di/dt = 1000 A/µs<br>(see_Figure 29: " Test circuit_<br>_for inductive load switching"_)|-|96|-|ns|
|Qrr|Reverse recoverycharge||-|373|-|nC|
|Irrm|Reverse recoverycurrent||-|13|-|A|
|dIrr/dt|Peak rate of fall of reverse<br>recoverycurrent duringtb||-|661|-|A/µs|
|Err|Reverse recoveryenergy||-|52|-|µJ|
|trr|Reverse recoverytime|IF= 10 A, VR= 400 V,<br>VGE= 15 V,<br>di/dt = 1000 A/μs,<br>TJ= 175 °C<br>(see_Figure 29: " Test circuit_<br>_for inductive load switching"_)|-|201|-|ns|
|Qrr|Reverse recovery charge||-|1352|-|nC|
|Irrm|Reverse recoverycurrent||-|19|-|A|
|dIrr/dt|Peak rate of fall of reverse<br>recoverycurrent duringtb||-|405|-|A/µs|
|Err|Reverse recoveryenergy||-|150|-|µJ|



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**STGP10M65DF2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 2: Power dissipation vs. case temperature  Figure 3: Collector current vs. case temperature<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics (TJ = 25 °C)** 

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**Figure 5: Output characteristics (TJ = 175 °C)** 

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**Figure 6: VCE(sat) vs. junction temperature** 

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**Figure 7: VCE(sat) vs. collector current** 

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**Electrical characteristics** 

**Figure 8: Collector current vs. switching frequency** 

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**----- Start of picture text -----**<br>
Figure 9: Forward bias safe operating area<br>**----- End of picture text -----**<br>


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**Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current** 

**==> picture [182 x 168] intentionally omitted <==**

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**Figure 12: Normalized VGE(th) vs. junction Figure 13: Normalized V(BR)CES vs. junction temperature temperature** 

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## **Electrical characteristics** 

**Figure 14: Capacitance variations** 

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**Figure 16: Switching energy vs. collector current** 

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**Figure 18: Switching energy vs. temperature** 

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**Figure 15: Gate charge vs. gate-emitter voltage** 

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**Figure 17: Switching energy vs. gate resistance** 

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**Figure 19: Switching energy vs. collector emitter voltage** 

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8/17<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 20: Short-circuit time and current vs. VGE** 

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**Figure 21: Switching times vs. collector current** 

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**----- Start of picture text -----**<br>
Figure 22: Switching times vs. gate resistance  Figure 23: Reverse recovery current vs. diode<br>current slope<br>**----- End of picture text -----**<br>


**Figure 24: Reverse recovery time vs. diode current Figure 25: Reverse recovery charge vs. diode slope current slope** 

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**Electrical characteristics** 

**Figure 26: Reverse recovery energy vs. diode current slope** 

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**Figure 27: Thermal impedance for IGBT** 

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**----- Start of picture text -----**<br>
ZthTO2T_B<br>K<br>δ=0.5<br>0.2<br>0.1<br>0.05<br>-1<br>10<br>0.02<br>Zth=k Rthj-c<br>0.01 δ=tp/t<br>Single pulse tp<br>t<br>-2<br>10<br>-5 -4 -3 -2 -1<br>10 10 10 10 10 tp [(s)]<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 28: Thermal impedance for diode** 

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**Test circuits** 

## **3 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 29:  Test circuit for inductive load  Figure 30:  Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>


**Figure 31:  Switching waveform** 

**Figure 32:  Diode reverse recovery waveform** 

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**----- Start of picture text -----**<br>
di/dt Qrr<br>IF ts trr tf<br>IRRM t<br>10%<br>IRRM<br>VRRM<br>dv/dt<br>AM01507v1<br>**----- End of picture text -----**<br>


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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 TO-220 type A package information** 

**Figure 33: TO-220 type A package outline** 

~~©~~ 14/17 DocID027352 Rev 5 

**STGP10M65DF2** 

**Package information** 

**Table 8: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**STGP10M65DF2** 

**Revision history** 

## **5 Revision history** 

**Table 9: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Feb-2015|1|First release.|
|23-Apr-2015|2|Minor text edits throughout document<br>Document status promoted to 'Production data'<br>In Section 2 Electrical characteristics:<br>- updated Table 4: Static characteristics<br>- updated Table 5: Dynamic characteristics<br>- updated Table 6: IGBT switching characteristics (inductive load)<br>- updated Table 7: Diode switching characteristics (inductive load)<br>Added Section 2.1 Electrical characteristics (curves)|
|31-Jul-2015|3|Updated Table 7: Diode switchingcharacteristics (inductive load)|
|19-Oct-2015|4|Updated_Table 5: "Dynamic characteristics"_and_Table 6: "IGBT_<br>_switching characteristics (inductive load)"._<br>Updated_Figure 8: "Collector current vs. switching frequency"._|
|07-Apr-2017|5|Modified title, features and applications on cover page<br>Modified_Table 4: "Static characteristics"_,_Table 6: "IGBT switching_<br>_characteristics (inductive load)"_and_Table 7: "Diode switching_<br>_characteristics (inductive load)"_<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

DocID027352 Rev 5 

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