# Intelligent Power Module (IPM), IGBT, 600 V, 10 A, 2.5 kV, SDIP, SLLIMM

![Product image](https://novapart.co/image/farnell:2849801/)

**URL**: https://novapart.co/products/STGIPS10K60T/intelligent-power-module-ipm-igbt-600-v-10-a-25-kv
**SKU**: STGIPS10K60T
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €14.4300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Ipm Series | SLLIMM |
| Product Range | SLLIMM 2nd Series |
| Ipm Case Style | SDIP |
| Isolation Voltage | 2.5kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2849801/)

## ~~wo~~ **STGIPS10K60T** SLLIMM™ small low-loss intelligent molded module IPM, 3-phase inverter, 10 A, 600 V short-circuit rugged IGBT 

**Datasheet** - **production data** 

## **Applications** 

- 3-phase inverters for motor drives 

- Home appliances, such as washing machines, refrigerators, air conditioners and sewing machines 

## **Description** 

## **Features** 

**==> picture [40 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SDIP-25L<br>**----- End of picture text -----**<br>


This intelligent power module provides a compact, high performance AC motor drive in a simple, rugged design. Combining ST proprietary control ICs with the most advanced short-circuitrugged IGBT system technology, this device is ideal for 3-phase inverters in applications such as home appliances and air conditioners. SLLIMM™ is a trademark of STMicroelectronics. 

- IPM 10 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes 

- Short-circuit rugged IGBTs 

- VCE(sat) negative temperature coefficient 

- 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down / pull-up resistors 

- Undervoltage lockout 

- Internal bootstrap diode 

- Interlocking function 

- Shut down function 

- DBC substrate leading to low thermal resistance 

- Isolation rating of 2500 Vrms/min 

- 4.7 kΩ NTC for temperature control 

- UL recognized: UL1557 file E81734 

**Table 1. Device summary** 

|**Table 1. Device summaryy**|**Table 1. Device summaryy**|
|---|---|
|**Order code**<br>**Marking**<br>**Package**<br>**Packing**<br>STGIPS10K60T<br>GIPS10K60T<br>SDIP-25L<br>Tube<br>~~ee~~||
|April 2015<br>DocID018533 Rev 5|1/19|
|This is information on a product in full production.|_www.st.com_|



This is information on a product in full production. 

**Contents** 

**STGIPS10K60T** 

## **Contents** 

|**1**|**Internal block diagram and pin configuration  . . . . . . . . . . . . . . . . . . . . 3**|
|---|---|
|**2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5**|
||2.1<br>Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
||2.2<br>Thermal data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7**|
||3.1<br>Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||3.1.1<br>NTC thermistor  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||3.2<br>Waveforms definitions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**4**|**Applications information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
||4.1<br>Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**5**|**Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
||5.1<br>SDIP-25L package information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||5.2<br>Packing information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|



2/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Internal block diagram and pin configuration** 

## **1 Internal block diagram and pin configuration** 

**==> picture [152 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Internal block diagram<br>**----- End of picture text -----**<br>


**==> picture [391 x 404] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM09320v2<br>**----- End of picture text -----**<br>


DocID018533 Rev 5 

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**STGIPS10K60T** 

**Internal block diagram and pin configuration** 

**Table 2. Pin description** 

|||**Table 2. Pin description**|
|---|---|---|
|**Pin n°**|**Symbol**|**Description**|
|1|OUTU|High side reference output for U phase|
|2|Vboot U|Bootstrap voltage for U phase|
|3|LINU|Low side logic input for U phase|
|4|HINU|High side logic input for U phase|
|5|VCC|Low voltage power supply|
|6|OUTV|High side reference output for V phase|
|7|Vboot V|Bootstrap voltage for V phase|
|8|GND|Ground|
|9|LIN<br>V|Low side logic input for V phase|
|10|HINV|High side logic input for V phase|
|11|OUTW|High side reference output for W phase|
|12|Vboot W|Bootstrap voltage for W phase|
|13|LIN<br>W|Low side logic input for W phase|
|14|HINW|High side logic input for W phase|
|15|SD|Shut down logic input (active low)|
|16|T1|NTC thermistor terminal|
|17|NW|Negative DC input for W phase|
|18|W|W phase output|
|19|P|Positive DC input|
|20|NV|Negative DC input for V phase|
|21|V|V phase output|
|22|P|Positive DC input|
|23|NU|Negative DC input for U phase|
|24|U|U phase output|
|25|P|Positive DC input|
||**Figure 2. Pin layout(bottom view)**||
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4/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Electrical ratings** 

## **2 Electrical ratings** 

## **2.1 Absolute maximum ratings** 

**Table 3. Inverter part** 

||**Table 3. Inverterpart**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VPN|Supply voltage applied between P - NU, NV, NW|450|V|
|VPN(surge)|Supply voltage (surge) applied between P - NU,<br>NV, NW|500|V|
|VCES|Each IGBT collector emitter voltage (VIN<br>(1)= 0)|600|V|
|± IC<br>(2)|Each IGBT continuous collector current at<br>TC= 25°C|10|A|
|± ICP<br>(3)|Each IGBT pulsed collector current|20|A|
|PTOT|Each IGBT total dissipation at TC= 25°C|33|W|
|tscw|Short-circuit withstand time, VCE= 0.5 V(BR)CES<br>Tj= 125 °C, VCC= Vboot= 15 V, VIN (1)= 5 V|5|µs|



1. Applied between HINi, LINi and[ G] ND[for i = U, V, W.] 

2. Calculated according to the iterative formula: 

**==> picture [197 x 25] intentionally omitted <==**

3. Pulse width limited by max junction temperature. 

**Table 4. Control part** 

||**Table 4. Controlpart**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Min.**|**Max.**|**Unit**|
|VOUT|Output voltage applied between OUTU, OUTV,<br>OUTW- GND|Vboot- 21|Vboot+ 0.3|V|
|VCC|Low voltage power supply|- 0.3|21|V|
|Vboot|Bootstrap voltage|- 0.3|620|V|
|VIN|Logic input voltage applied between HIN, LIN<br>and<br>GND|- 0.3|15|V|
|VSD|SD voltage|- 0.3|15|V|
|dVOUT/dt|Allowed output slew rate||50|V/ns|



**Table 5. Total system** 

||**Table 5. Total system**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VISO|Isolation withstand voltage applied between each<br>pin and heatsink plate (AC voltage, t = 60 sec.)|2500|V|
|TC|Module case operation temperature|-40 to 125|°C|
|TJ|Power chips operating junction temperature|-40 to 150|°C|



DocID018533 Rev 5 5/19 

**STGIPS10K60T** 

**Electrical ratings** 

## **2.2 Thermal data** 

**Table 6. Thermal data** 

||**Table 6. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|RthJC|Thermal resistance junction-case single IGBT max.|3.8|°C/W|
||Thermal resistance junction-case single diode max.|5.5|°C/W|



6/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Electrical characteristics** 

## **3 Electrical characteristics** 

TJ = 25 °C unless otherwise specified. 

**Table 7. Inverter part** 

|**Symbol**|**Parameter**|**Test conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|VCE(sat)|Collector-emitter<br>saturation voltage|VCC= Vboot= 15 V,<br>VIN<br>(1)= 5 V,<br>IC= 5 A|-|2.1|2.5|V|
|||VCC= Vboot= 15 V,<br>VIN<br>(1)= 5 V,<br>IC= 5 A, Tj= 125 °C|-|1.8|||
|ICES|Collector-cut off current<br>(VIN<br>(1) = 0 “logic state”)|VCE= 550 V<br>VCC= Vboot= 15 V|-||150|µA|
|VF|Diode forward voltage|(VIN<br>(1) = 0 “logic state”), IC=<br>5 A|-||1.9|V|
|**Inductive**|**load switching time and energy**||||||
|ton|Turn-on time|VDD= 300 V,<br>VCC= Vboot= 15 V,<br>VIN<br>(1)= 0 ÷ 5 V,<br>IC= 5 A (see_Figure 4_)|-|320|-|ns|
|tc(on)|Crossover time (on)||-|70|-||
|toff|Turn-off time||-|430|-||
|tc(off)|Crossover time (off)||-|135|-||
|trr|Reverse recovery time||-|130|-||
|Eon|Turn-on switching losses||-|65|-|µJ|
|Eoff|Turn-off switching losses||-|75|-||
|<br>|||||||



1. Applied between HINi, LINi and GND for i = U, V, W (LIN inputs are active-low). 

_Note: tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition._ 

DocID018533 Rev 5 

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**STGIPS10K60T** 

**Electrical characteristics** 

## **Figure 3. Switching time test circuit** 

**==> picture [405 x 542] intentionally omitted <==**

**----- Start of picture text -----**<br>
INPUT<br>BOOT BUS<br>/Lin<br>+5V VBOOT>VCC<br>/SD<br>RSD HVG<br>Hin L<br>VCC OUT<br>Vcc IC<br>DT LVG<br>VCE<br>GND CP+<br>0<br>1 AM17167v1<br>Figure 4. Switching time definition<br>100% IC   100% IC<br>t rr<br>VCE IC IC VCE<br>VIN VIN<br>t ON t OFF<br>t C(ON) t C(OFF)<br>VIN(ON) 10% IC 90% IC 10% VCE VIN(OFF) 10% VCE 10% IC<br>(a) turn-on (b) turn-off AM09223V1<br>**----- End of picture text -----**<br>


_Note: Figure 4 "Switching time definition" refers to HIN inputs (active high). For LIN inputs (active low), VIN polarity must be inverted for turn-on and turn-off._ 

8/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Electrical characteristics** 

## **3.1 Control part** 

**Table 8. Low voltage power supply (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vcc_hys|VccUV hysteresis||1.2|1.5|1.8|V|
|Vcc_thON|VccUV turn ON threshold||11.5|12|12.5|V|
|Vcc_thOFF|VccUV turn OFF threshold||10|10.5|11|V|
|Iqccu|Undervoltage quiescent<br>supply current|VCC= 10 V<br>SD<br>= 5 V; LIN<br>= 5 V;<br>HIN= 0|||450|µA|
|Iqcc|Quiescent current|Vcc= 15 V<br>SD<br>= 5 V; LIN<br>= 5 V<br>HIN= 0|||3.5|mA|



**Table 9. Bootstrapped voltage (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VBS_hys|VBS UV hysteresis||1.2|1.5|1.8|V|
|VBS_thON|VBS UV turn ON threshold||11.1|11.5|12.1|V|
|VBS_thOFF|VBS UV turn OFF threshold||9.8|10|10.6|V|
|IQBSU|Undervoltage VBSquiescent<br>current|VBS< 9 V<br>SD<br>= 5 V; LIN<br>and<br>HIN = 5 V||70|110|µA|
|IQBS|VBSquiescent current|VBS= 15 V<br>SD<br>= 5 V; LIN<br>and<br>HIN = 5 V||200|300|µA|
|RDS(on)|Bootstrap driver on resistance|LVG ON||120||W|



**Table 10. Logic inputs (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vil|Low logic level voltage||0.8||1.1|V|
|Vih|High logic level voltage||1.9||2.25|V|
|IHINh|HIN logic “1” input bias current|HIN = 15 V|110|175|260|µA|
|IHINl|HIN logic “0” input bias current|HIN = 0 V|||1|µA|
|ILINl|LIN<br>logic “1” input bias current|LIN<br>= 0 V|3|6|20|µA|
|ILINh|LIN<br>logic “0” input bias current|LIN<br>= 15 V|||1|µA|
|ISDh|SD<br>logic “0” input bias current|SD<br>= 15 V|30|120|300|µA|
|ISDl|SD<br>logic “1” input bias current|SD<br>= 0 V|||3|µA|
|Dt|Dead time|see_Figure 9_||600||ns|



DocID018533 Rev 5 

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**STGIPS10K60T** 

**Electrical characteristics** 

**Table 11. Shut down characteristics (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|tsd|Shut down to high / low side<br>driver propagation delay|VOUT = 0, Vboot = VCC,<br>VIN = 0 to 3.3 V|50|125|200|ns|



**Table 12. Truth table** 

||**Table 12. Truth table**|**Table 12. Truth table**|**Table 12. Truth table**|||
|---|---|---|---|---|---|
|**Condition**|**Logic input (VI)**|||**Output**||
||**SD**|**LIN**|**HIN**|**LVG**|**HVG**|
|Shutdown enable<br>half-bridge tri-state|L|X|X|L|L|
|Interlocking<br>half-bridge tri-state|H|L|H|L|L|
|0 ‘’logic state”<br>half-bridge tri-state|H|H|L|L|L|
|1 “logic state”<br>low side direct driving|H|L|L|H|L|
|1 “logic state”<br>high side direct driving|H|H|H|L|H|



_Note: X: don’t care_ 

**Figure 5. Maximum IC(RMS) current vs. switching Figure 6. Maximum IC(RMS) current vs. fSINE** ~~**(1)**~~ **frequency[(1)]** 

**==> picture [435 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM03801v1 AM03802v1<br>IC (RMS) IC (RMS)<br>(A) (A) VPN = 300 V, Modulation index = 0.8,<br>VPN = 300 V, Modulation index = 0.8,  PF = 0.6, Tj  = 150 °C, Tc = 100 °C<br>PF = 0.6, Tj = 150 °C, f SINE = 60 Hz 8<br>12<br>7<br>10 TC = 80°C<br>fsw = 12 kHz<br>6<br>8 fsw = 16 kHz<br>TC = 100°C 5<br>fsw = 20 kHz<br>6 4<br>4 6 8 10 12 14 16 fsw(kHz) 1 10 fSINE(Hz)<br>**----- End of picture text -----**<br>


1. Simulated curves refer to typical IGBT parameters and maximum RthJC. 

10/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Electrical characteristics** 

## **3.1.1 NTC thermistor** 

**Table 13. NTC thermistor** 

|**Symbol**|**Paramete**|**r**<br>**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit.**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25 °C||4.7||kΩ|
|R125|Resistance|T = 125 °C||160||Ω|
|B|B-constant|T = 25 °C to 85 °C||3950||K|
|T|Operating temperature||-40||150|°C|



## **Equation 1: resistance variation vs. temperature** 

B [1] – -------1 **-**   T[---] 298  R(T) = R25 ⋅ e 

Where T are temperatures in Kelvins 

## **Figure 7. NTC resistance vs. temperature** 

**==> picture [204 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
NTC [kΩ] AM17168v1<br>180<br>160<br>140<br>120<br>100<br>80<br> MAX.<br>60<br> CENTER<br>40<br>20<br> MIN.<br>0<br>-40 -20 0 20 40 60 80 100 120 140 (°C)<br>**----- End of picture text -----**<br>


## **Figure 8. NTC resistance vs. temperature (zoom)** 

**==> picture [202 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
NTC [kΩ] AM17169v1<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br> MAX.<br>0.6<br> CENTER<br>0.4<br> MIN.<br>0.2<br>0.0<br>50 60 70 80 90 100 110 120 130 140 (°C)<br>**----- End of picture text -----**<br>


DocID018533 Rev 5 

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**STGIPS10K60T** 

**Electrical characteristics** 

## **3.2 Waveforms definitions** 

## **Figure 9. Dead time and interlocking waveforms definitions** 

**==> picture [396 x 360] intentionally omitted <==**

**----- Start of picture text -----**<br>
LIN<br>CONTROL SIGNAL EDGES HIN<br>OVERLAPPED:<br>INTERLOCKING + DEAD TIME LVG<br>DTLH DTHL<br>HVG<br>gate driver outputs OFF gate driver outputs OFF<br>(HALF-BRIDGE TRI-STATE) (HALF-BRIDGE TRI-STATE)<br>LIN<br>CONTROL SIGNALS EDGES HIN<br>SYNCHRONOUS (*):<br>DEAD TIME<br>LVG<br>DTLH DTHL<br>HVG<br>gate driver outputs OFF gate driver outputs OFF<br>(HALF-BRIDGE TRI-STATE) (HALF-BRIDGE TRI-STATE)<br>LIN<br>CONTROL SIGNALS EDGES HIN<br>NOT OVERLAPPED,<br>BUT INSIDE THE DEAD TIME: LVG<br>DEAD TIME<br>DTLH DTHL<br>HVG<br>gate driver outputs OFF gate driver outputs OFF<br>(HALF-BRIDGE TRI-STATE) (HALF-BRIDGE TRI-STATE)<br>LIN<br>CONTROL SIGNALS EDGES<br>NOT OVERLAPPED,  HIN<br>OUTSIDE THE DEAD TIME:<br>DIRECT DRIVING<br>LVG<br>DTLH DTHL<br>HVG<br>gate driver outputs OFF gate driver outputs OFF<br>(HALF-BRIDGE TRI-STATE) (HALF-BRIDGE TRI-STATE)<br>(*)  HIN and LIN can be connected together and driven by just one control signal<br>INTERLOCKING INTERLOCKING<br>**----- End of picture text -----**<br>


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DocID018533 Rev 5 

**STGIPS10K60T** 

**Applications information** 

## **4 Applications information** 

**==> picture [173 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 10. Typical application circuit<br>**----- End of picture text -----**<br>


**==> picture [395 x 532] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM09321v2<br>**----- End of picture text -----**<br>


DocID018533 Rev 5 

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**STGIPS10K60T** 

**Applications information** 

## **4.1 Recommendations** 

- Input signal HIN is active high logic. A 85 kΩ (typ.) pull down resistor is built-in for each high side input. If an external RC filter is used, for noise immunity, pay attention to the variation of the input signal level. 

- Input signal /LIN is active low logic. A 720 kΩ (typ.) pull-up resistor, connected to an internal 5 V regulator through a diode, is built-in for each low side input. 

- To prevent the input signals oscillation, the wiring of each input should be as short as possible. 

- By integrating an application specific type HVIC inside the module, direct coupling to MCU terminals without any opto-coupler is possible. 

- Each capacitor should be located as nearby the pins of IPM as possible. 

- Low inductance shunt resistors should be used for phase leg current sensing. 

- Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 

- The SD signal should be pulled up to 5 V / 3.3 V with an external resistor. 

**Table 14. Recommended operating conditions** 

|**Symbol**|**Parameter**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|VPN|Supply voltage|Applied between P-Nu, Nv, Nw||300|400|V|
|VCC|Control supply voltage|Applied between VCC-GND|13.5|15|18|V|
|VBS|High side bias voltage|Applied between VBOOTi-OUTifor<br>i = U, V, W|13||18|V|
|tdead|Blanking time to<br>prevent arm-short|For each input signal|1|||µs|
|fPWM|Pwm input signal|-40°C < Tc< 100°C<br>-40°C < Tj< 125°C|||20|kHz|
|TC|Case operation<br>temperature||||100|°C|



For further details, refer to AN3338. 

14/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Package information** 

## **5 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

Please refer to dedicated technical note TN0107 for mounting instructions. 

## **5.1 SDIP-25L package information** 

## **Figure 11. SDIP-25L package outline** 

**==> picture [342 x 426] intentionally omitted <==**

**----- Start of picture text -----**<br>
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DocID018533 Rev 5 

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**STGIPS10K60T** 

**Package information** 

**Table 15. SDIP-25L mechanical data** 

||**Table 15. SDIP-25L mechanical data**|**Table 15. SDIP-25L mechanical data**|**Table 15. SDIP-25L mechanical data**|
|---|---|---|---|
|**Dim.**|**mm**|||
||**Min.**|**Typ.**|**Max.**|
|A|43.90|44.40|44.90|
|A1|1.15|1.35|1.55|
|A2|1.40|1.60|1.80|
|A3|38.90|39.40|39.90|
|B|21.50|22.00|22.50|
|B1|11.25|11.85|12.45|
|B2|24.83|25.23|25.63|
|C|5.00|5.40|6.00|
|C1|6.50|7.00|7.50|
|C2|11.20|11.70|12.20|
|C3|2.90|3.00|3.10|
|e|2.15|2.35|2.55|
|e1|3.40|3.60|3.80|
|e2|4.50|4.70|4.90|
|e3|6.30|6.50|6.70|
|D||33.30||
|D1||5.55||
|E||11.20||
|E1||1.40||
|F|0.85|1.00|1.15|
|F1|0.35|0.50|0.65|
|R|1.55|1.75|1.95|
|T|0.45|0.55|0.65|
|V|0°||6°|



16/19 

DocID018533 Rev 5 

**STGIPS10K60T** 

**Package information** 

## **5.2 Packing information** 

**==> picture [193 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. SDIP-25L packing information<br>**----- End of picture text -----**<br>


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AM10488v1<br>8123127_E<br>Base quantity: 11 pcs Bulk quantity: 132 pcs<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

**Table 16. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-Mar-2011|1|Initial release.|
|14-Sep-2011|2|Modified_Section 3.1.1 on page 11_.|
|28-Aug-2012|3|Modified: Min. and Max. value_Table 4 on page 5_.<br>Updated:_Table 15 on page 15_,_Figure 11 on page 15_and<br>_Figure 12 on page 17_.<br>Added:_Figure 13 on page 18_.|
|30-Apr-2013|4|Modified:<br>–<br>description pin 15_Table 2 on page 4_,<br>VSDparameter_Table 4 on page 5_.<br>–<br>_Figure 3 on page 8_and_Figure 7 on page 11_.<br>Added:<br>–<br>_Figure 8 on page 11_.|
|14-Apr-2015|5|Text edits and formatting changes throughout document<br>Updated_Figure 2: Pin layout (bottom view)_<br>Updated_Section 5: Package information_|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STGIPS10K60T/intelligent-power-module-ipm-igbt-600-v-10-a-25-kv)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stgips10k60t/ipm-igbt-10a-2-5kv-sdip-25l/dp/2849801)
---

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