# Intelligent Power Module (IPM), 3-Phase, IGBT, 600 V, 3 A, 1 kV, NDIP, SLLIMM

![Product image](https://novapart.co/image/farnell:2807348/)

**URL**: https://novapart.co/products/STGIPN3H60AT/intelligent-power-module-ipm-3-phase-igbt-600-v-a
**SKU**: STGIPN3H60AT
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €3.6500
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):3A; Isolation Voltage:1kV; IPM Case Style:NDIP; IPM Series:SLLIMM; Product Range:SLLIMM Nano Series;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | SLLIMM |
| Product Range | SLLIMM Nano Series |
| Ipm Case Style | NDIP |
| Ipm Power Device | IGBT |
| Isolation Voltage | 1kV |
| Current Rating (Ic / Id) | 3A |
| Voltage Rating (Vces / Vdss) | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807348/)

## **STGIPN3H60AT** 

SLLIMM™-nano small low-loss intelligent molded module IPM, 3 A, 600 V, 3-phase IGBT inverter bridge 

Datasheet - production data 

## **Applications** 

- 3-phase inverters for motor drives 

- Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps 

## **Description** 

## **Features** 

- IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes 

- Optimized for low electromagnetic interference 

- VCE(sat) negative temperature coefficient 

This intelligent power module implements a compact, high performance AC motor drive in a simple, rugged design. It is composed of six IGBTs with freewheeling diodes and three halfbridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and compactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, completely uncommitted, and a comparator that can be used to design a fast and efficient protection circuit. SLLIMM™ is a trademark of STMicroelectronics. 

- 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down resistors 

- Undervoltage lockout 

- Internal bootstrap diode 

- Interlocking function 

- Optimized pinout for easy board layout 

- 85 kΩ NTC for temperature control (UL1434 CA 2 and 4) 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGIPN3H60AT|GIPN3H60AT|NDIP-26L|Tube|



September 2016 DocID026945 Rev 2 

This is information on a product in full production. 

_www.st.com_ 

1/19 

**Contents** 

**STGIPN3H60AT** 

|**Contents**<br>**STGIPN3H60AT**|**Contents**<br>**STGIPN3H60AT**|
|---|---|
|**Contents**||
|**1**|**Internal schematic diagram and pin configuration ....................... 3**|
|**2**|**Electrical ratings ............................................................................. 6**|
||2.1<br>Absolute maximum ratings ................................................................ 6|
||2.2<br>Thermal data ..................................................................................... 6|
|**3**|**Electrical characteristics ................................................................ 7**|
||3.1<br>Inverter part ....................................................................................... 7|
||3.2<br>Control part ....................................................................................... 9|
||3.2.1<br>NTC thermistor ................................................................................. 10|
|**4**|**Application circuit example .......................................................... 12**|
||4.1<br>Guidelines ....................................................................................... 13|
|**5**|**Package information ..................................................................... 14**|
||5.1<br>NDIP-26L type C package information ............................................ 15|
||5.2<br>NDIP-26L packing information ........................................................ 17|
|**6**|**Revision history ............................................................................ 18**|



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**Internal schematic** diagram and pin configuration 

## **1 Internal schematic diagram and pin configuration** 

**Figure 1: Internal schematic diagram** 

**==> picture [463 x 461] intentionally omitted <==**

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**STGIPN3H60AT** 

**Internal schematic** diagram and pin configuration 

**Table 2: Pin description** 

|**Pin**|**Symbol**|**Description**|
|---|---|---|
|1|GND|Ground|
|2|T|NTC thermistor terminal|
|3|VCCW|Low voltagepower supplyWphase|
|4|HIN W|High side logic input for Wphase|
|5|LIN W|Low side logic input for Wphase|
|6|T|NTC thermistor terminal|
|7|NC|Not connected|
|8|NC|Not connected|
|9|VCCV|Low voltagepower supplyVphase|
|10|HIN V|High side logic input for Vphase|
|11|LIN V|Low side logic input for Vphase|
|12|NC|Not connected|
|13|VCCU|Low voltagepower supplyfor Uphase|
|14|HIN U|High side logic input for Uphase|
|15|T|NTC thermistor terminal|
|16|LIN U|Low side logic input for Uphase|
|17|VBOOTU|Bootstrapvoltage for Uphase|
|18|P|Positive DC input|
|19|U|Uphase output|
|20|NU|Negative DC input for Uphase|
|21|VBOOTV|Bootstrapvoltage for Vphase|
|22|V|V phase output|
|23|NV|Negative DC input for Vphase|
|24|VBOOTW|Bootstrapvoltage for Wphase|
|25|W|Wphase output|
|26|NW|Negative DC input for W phase|



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**STGIPN3H60AT Internal schematic** diagram and pin configuration 

**Figure 2: Pin layout (top view)** 

**==> picture [406 x 239] intentionally omitted <==**

**----- Start of picture text -----**<br>
PIN26 (*) (*) PIN17<br>PIN #1 ID<br>PIN1 PIN16<br>(*) Dummy pin internally connected to P (positive DC input). AM09368V1<br>**----- End of picture text -----**<br>


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**STGIPN3H60AT** 

**Electrical ratings** 

## **2 Electrical ratings** 

## **2.1 Absolute maximum ratings** 

**Table 3: Inverter part** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Each IGBT collector emitter voltage (VIN_(1)_= 0)|600|V|
|± IC_(2)_|Each IGBT continuous collector current at TC= 25°C|3|A|
|± ICP_(3)_|Each IGBTpulsed collector current|18|A|
|PTOT|Each IGBT total dissipation at TC= 25°C|8|W|



## **Notes:** 

(1)Applied between HINi, LINi and GND for i = U, V, W. 

- (2)Calculated according to the iterative formula: 

(3)Pulse width limited by max junction temperature. 

**Table 4: Control part** 

|**Symbol**|**Parameter**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|
|VOUT|Output voltage applied between OUTU, OUTV, OUTW-<br>GND|Vboot- 18|Vboot+ 0.3|V|
|VCC|Low voltagepower supply|- 0.3|18|V|
|Vboot|Bootstrapvoltage|- 0.3|618|V|
|VIN|Logic input voltage applied between HINi, LINiand GND<br>for i = U, V, W|- 0.3|VCC+ 0.3|V|
|∆VOUT/dT|Allowed output slew rate||50|V/ns|



**Table 5: Total system** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VISO|Isolation withstand voltage applied between each pin and<br>heatsinkplate (AC voltage, t = 60 s.)|1000|V|
|Tj|Power chips operating junction temperature range|-40 to 150|°C|
|TC|Module operation case temperature range|-40 to 125|°C|



## **2.2 Thermal data** 

## **Table 6: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RthJA|Thermal resistancejunction-ambient|50|°C/W|



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**Electrical characteristics** 

## **3 Electrical characteristics** 

## **3.1 Inverter part** 

TJ = 25 °C unless otherwise specified. 

**Table 7: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VCE(sat)|Collector-emitter<br>saturation voltage|VCC= Vboot= 15 V, VIN_(1)_= 0 to 5 V, IC= 1 A|-|2.15|2.6|V|
|||VCC= Vboot= 15 V, VIN_(1)_= 0 to 5 V, IC= 1 A,<br>TJ= 125 °C|-|1.65|||
|ICES|Collector-cut off current<br>(VIN_(1)_= 0 “logic state”)|VCE= 550 V, VCC= VBoot= 15 V|-||250|µA|
|VF|Diode forward voltage|VIN_(1)_= 0 “logic state”, IC= 1 A|-||1.7|V|



## **Notes:** 

(1)Applied between HINi, LINi and GND for i = U, V, W (LIN inputs are active-low). 

**Table 8: Inductive load switching time and energy** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ton_(1)_|Turn-on time|VDD= 300 V,<br>VCC= Vboot= 15 V,<br>VIN_(2)_= 0 to 5 V,<br>IC= 1 A<br>(see_Figure 4: "Switching time definition"_)|-|275|-|ns|
|tc(on)_(1)_|Crossover time (on)||-|90|-||
|toff_(1)_|Turn-off time||-|890|-||
|tc(off)_(1)_|Crossover time (off)||-|125|-||
|trr|Reverse recoverytime||-|50|-||
|Eon|Turn-on switchingenergy||-|18|-|µJ|
|Eoff|Turn-off switchingenergy||-|13|-||



## **Notes:** 

(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. 

(2)Applied between HINi, LINi and GND for i = U, V, W (LIN inputs are active-low). 

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**Electrical characteristics** 

**Figure 3: Switching time test circuit** 

**==> picture [358 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
INPUT<br>Lin BOOT VBOOT>VCC <___] BUS<br>HVG<br>Hin L<br>VCC OUT<br>Vcc<br>IC<br>LVG<br>VCE<br>GND<br>t f- #<br>0<br>1<br>Figure 4: Switching time definition<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

## **3.2 Control part** 

**Table 9: Low voltage power supply (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VCC_thON|Undervoltage turn-on threshold||9.1|9.6|10.1|V|
|VCC_thOFF|Undervoltage turn-off threshold||7.9|8.3|8.8|V|
|VCC_hys|Undervoltage hystereses||0.9|||V|
|Iqccu|Undervoltagequiescent supplycurrent|VCC< 7.9 V||250|330|µA|
|Iqcc|Quiescent current|VCC= 15 V||350|450|µA|



**Table 10: Bootstrapped voltage (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vboot_thON|Undervoltage turn-on threshold||8.5|9.5|10.5|V|
|Vboot_thOFF|Undervoltage turn-off threshold||7.2|8.3|9.2|V|
|Vboothys|Undervoltage hystereses||0.9|||V|
|Iqboot|Quiescent current||||250|µA|
|RDS(on)|Bootstrapdriver on-resistance|VCC> 12.5 V||125||Ω|



**Table 11: Logic inputs (VCC = 15 V unless otherwise specified)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vil|Low level logic input voltage||||1.1|V|
|Vih|High level logic input voltage||1.8|||V|
|Iil|Low level logic input current_(1)_|VIN= 0 V_(1)_|-1|||µA|
|Iih|High level logic input current_(1)_|VIN= 15 V_(1)_||20|70|µA|
|Dt|Dead time_(2)_|||320||ns|



## **Notes:** 

(1)Applied between HINi, LINi and GND for i = U, V, W 

> (2)See _Figure 5: "Dead time and interlocking definition"_ 

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**STGIPN3H60AT** 

**Electrical characteristics** 

**Figure 5: Dead time and interlocking definition** 

## **3.2.1 NTC thermistor** 

**Table 12: NTC thermistor** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25 °C||85||kΩ|
|R100|Resistance|T = 100 °C||5388||Ω|
|B|B-constant|T = 25 °C to 100 °C||4092||K|
|T|Operating temperature||-25||125|°C|



−[1] 𝑇 298) 𝑅(𝑇) = 𝑅25 × 𝑒[𝐵] ~~[(]~~[1] 

Where T are temperatures in Kelvins 

**Figure 6: NTC resistance vs. temperature** 

**==> picture [312 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
NTC [kΩ]<br>3.500<br>3.000<br>2.500<br>2.000<br>1.500<br>Max<br>1.000<br>Min<br>500 Typ<br>0<br>-40 -20 0 20 40 60 80 100 120 140 [°C]<br>GIPD17220131349FSR<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 7: NTC resistance vs. temperature (zoom)** 

**==> picture [406 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
NTC [kΩ]<br>40<br>35<br>30<br>25<br>20<br>Max<br>15 Min<br>10 Typ<br>5<br>0<br>50 70 90 110 130 150[°C]<br>GIPD17220131350FSR<br>**----- End of picture text -----**<br>


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**Application circuit** example 

**4 Application circuit example** 

**Figure 8: Application circuit example** 

**==> picture [463 x 563] intentionally omitted <==**

Application designers are free to use a different scheme according with the specifications of the device. 

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**Application circuit** example 

## **4.1 Guidelines** 

- Input signals HIN, LIN are active-high logic. A 500 kΩ (typ.) pull-down resistor is builtin for each input. To prevent input signal oscillation, the wiring of each input should be as short as possible and the use of RC filters (R1, C1) on each input signal is suggested. The filters should be done with a time constant of about 100ns and must be placed as close as possible to the IPM input pins. 

- The bypass capacitor Cvcc (aluminum or tantalum) is recommended to reduce the transient circuit demand on the power supply. In addition, a decoupling capacitor C2 (from 100 to 220 nF, ceramic with low ESR) is suggested, to reduce high frequency switching noise distributed on the power supply lines. It must be placed as close as possible to each Vcc pin and in parallel to the bypass capacitor. 

- The use of RC filter (RSF, CSF) for current monitoring is recommended to improve noise immunity. The filter must be placed as close as possible to the microcontroller or to the Op-amp. 

- The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR), in parallel to each Cboot, is recommended in order to filter high frequency disturbances. 

- The Zener diodes DZ1 between the Vcc pins and GND and in parallel to each Cboot is suggested in order to prevent overvoltage. 

- The decoupling capacitor C4 (from 100 to 220 nF, ceramic with low ESR) in parallel to the electrolytic capacitor Cvdc is recommended, in order to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc). 

- By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible. 

- Low inductance shunt resistors should be used for phase leg current sensing. 

- In order to avoid malfunctions, the wiring between N pins, the shunt resistor and PWR_GND should be as short as possible. 

- It is recommended to connect SGN_GND to PWR_GND at only one point (near the terminal of shunt resistor), in order to avoid any malfunction due to power ground fluctuation. 

These guidelines are useful for application design to ensure the specifications of the device. For further details, please refer to the relevant application note AN4043. 

**Table 13: Recommended operating conditions** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supplyvoltage|Applied between P-Nu, Nv, Nw||300|500|V|
|VCC|Control supplyvoltage|Applied between VCC-GND|12|15|17|V|
|VBS|High side bias voltage|Applied between VBOOTi-OUTi<br>for i = U, V, W|11.5||17|V|
|tdead|Blanking time to prevent<br>Arm-short|For each input signal|1.5|||µs|
|fPWM|PWM input signal|-40°C < Tc< 100 °C<br>-40°C < Tj< 125 °C|||25|kHz|
|TC|Case operation<br>temperature||||100|°C|



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**Package information** 

## **5 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **5.1 NDIP-26L type C package information** 

**Figure 9: NDIP-26L type C package outline** 

**==> picture [463 x 522] intentionally omitted <==**

**----- Start of picture text -----**<br>
8278949_7<br>**----- End of picture text -----**<br>


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**Package information** 

**Table 14: NDIP-26L type C mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|||4.40|
|A1|0.80|1.00|1.20|
|A2|3.00|3.10|3.20|
|A3|1.70|1.80|1.90|
|A4|5.70|5.90|6.10|
|b|0.53||0.72|
|b1|0.52|0.60|0.68|
|b2|0.83||1.02|
|b3|0.82|0.90|0.98|
|c|0.46||0.59|
|c1|0.45|0.50|0.55|
|D|29.05|29.15|29.25|
|D1|0.50|0.77|1.00|
|D2|0.35|0.53|0.70|
|D3|||29.55|
|E|12.35|12.45|12.55|
|e|1.70|1.80|1.90|
|e1|2.40|2.50|2.60|
|eB1|16.10|16.40|16.70|
|eB2|21.18|21.48|21.78|
|L|1.24|1.39|1.54|



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**Package information** 

## **5.2 NDIP-26L packing information** 

**Figure 10: NDIP-26L tube dimensions (dimensions are in mm)** 

**==> picture [433 x 30] intentionally omitted <==**

**----- Start of picture text -----**<br>
Notes:<br>1- Material: extrused/transparent PVC 0.80°°' mm thickness 10E6~10E11/SQ PVC<br>2- General tolerance unless otherwise specified: +0.25 mm<br>8313150_3<br>**----- End of picture text -----**<br>


**Table 15: Shipping details** 

|**Parameter**|**Value**|
|---|---|
|Basequantity|17pcs|
|Bulkquantity|476pcs|



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**Revision history** 

## **6 Revision history** 

**Table 16: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|30-Sep-2014|1|Initial release.|
|13-Sep-2016|2|Updated_Section 5.1: "NDIP-26L type C package information"_and<br>_Section 5.2: "NDIP-26L packing information"_<br>Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stgipn3h60at/ipm-module-igbt-3a-600v-ndip-26/dp/2807348)
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