# Intelligent Power Module (IPM), IGBT, 600 V, 12 A, 1.5 kV, DIP, SLLIMM

![Product image](https://novapart.co/image/farnell:2767841/)

**URL**: https://novapart.co/products/STGIB8CH60TS-E/intelligent-power-module-ipm-igbt-600-v-12-a-15-kv
**SKU**: STGIB8CH60TS-E
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €6.4900
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):12A; Isolation Voltage:1.5kV; IPM Case Style:DIP; IPM Series:SLLIMM; Product Range:SLLIMM-2nd Ser

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | SLLIMM |
| Product Range | SLLIMM-2nd Series |
| Ipm Case Style | DIP |
| Ipm Power Device | IGBT |
| Isolation Voltage | 1.5kV |
| Current Rating (Ic / Id) | 12A |
| Voltage Rating (Vces / Vdss) | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2767841/)

## **STGIB8CH60TS-E** 

SLLIMM™ - 2[nd] series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBT 

Datasheet - preliminary data 

## **Applications** 

- 3-phase inverters for motor drives 

- Home appliances such as washing machines, refrigerators, air conditioners and sewing machines 

## **Description** 

## **Features** 

- IPM 12 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes 

This second series of SLLIMM (small low-loss intelligent molded module) provides a compact, high performance AC motor drive in a simple, rugged design. It combines new ST proprietary control ICs (one LS and one HS driver) with an improved short-circuit rugged trench gate fieldstop (TFS) IGBT, making it ideal for 3-phase inverter systems such as home appliances and air conditioners. SLLIMM™ is a trademark of STMicroelectronics. 

- 3.3 V, 5 V TTL/CMOS inputs with hysteresis 

- Internal bootstrap diode 

- Undervoltage lockout of gate drivers 

- Smart shutdown function 

- Short-circuit protection 

- Shutdown input/fault output 

- Separate open emitter outputs 

- Built-in temperature sensor 

- Comparator for fault protection 

- Short-circuit rugged TFS IGBTs 

- Very fast, soft recovery diodes 

- 85 kΩ NTC UL 1434 CA 4 recognized 

- Fully isolated package 

- Isolation rating of 1500 Vrms/min 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STGIB8CH60TS-E|GIB8CH60TS-E|SDIP2B-26L|Tube|



This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 

_www.st.com_ 

October 2016 DocID029830 Rev 1 

1/24 

|**Contents**<br>**STGIB8CH60TS-E**|**Contents**<br>**STGIB8CH60TS-E**|
|---|---|
|**Contents**||
|**1**|**Internal schematic and pin description ......................................... 3**|
|**2**|**Absolute maximum ratings ............................................................. 5**|
|**3**|**Electrical characteristics ................................................................ 6**|
||3.1<br>Inverter part ....................................................................................... 6|
||3.2<br>Control / protection part ..................................................................... 8|
|**4**|**Fault management ......................................................................... 10**|
||4.1<br>TSO output ...................................................................................... 11|
||4.2<br>Smart shutdown function ................................................................. 11|
|**5**|**Application circuit example .......................................................... 14**|
|**6**|**Guidelines ...................................................................................... 15**|
|**7**|**NTC thermistor .............................................................................. 17**|
|**8**|**Electrical characteristics (curves) ................................................ 19**|
|**9**|**Package information ..................................................................... 21**|
||9.1<br>SDIP2B-26L type E ......................................................................... 21|
|**10**|**Revision history ............................................................................ 23**|



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**STGIB8CH60TS-E** 

**Internal** schematic and pin description 

## **1 Internal schematic and pin description** 

**Figure 1: Internal schematic diagram and pin configuration** 

**==> picture [408 x 457] intentionally omitted <==**

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**STGIB8CH60TS-E** 

**Internal** schematic and pin descriptio 

**Table 2: Pin description** 

|**Pin**|**Symbol**|**Description**|
|---|---|---|
|1|NC||
|2|VBOOTu|Bootstrapvoltage for Uphase|
|3|VBOOTv|Bootstrapvoltage for Vphase|
|4|VBOOTw|Bootstrapvoltage for Wphase|
|5|HINu|High-side logic input for Uphase|
|6|HINv|High-side logic input for Vphase|
|7|HINw|High-side logic input for Wphase|
|8|VCCH|High-side low voltagepower supply|
|9|GND|Ground|
|10|LINu|Low-side logic input for Uphase|
|11|LINv|Low-side logic input for Vphase|
|12|LINw|Low-side logic input for Wphase|
|13|VCCL|Low-side low voltagepower supply|
|14|SD<br>̅̅̅̅/OD|Shutdown logic input (active low) / open-drain (comparator output)|
|15|CIN|Comparator input|
|16|GND|Ground|
|17|TSO|Temperature sensor output|
|18|NW|Negative DC input for Wphase|
|19|NV|Negative DC input for Vphase|
|20|NU|Negative DC input for Uphase|
|21|W|Wphase output|
|22|V|V phase output|
|23|U|Uphase output|
|24|P|Positive DC input|
|25|T2|NTC thermistor terminal 2|
|26|T1|NTC thermistor terminal 1|



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**STGIB8CH60TS-E** 

**Absolute** maximum ratings 

## **2 Absolute maximum ratings** 

**Table 3: Absolute maximum ratings (TJ = 25 °C unless otherwise noted)** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VPN|Supplyvoltage between P -NU, -NV, -NW|450|V|
|VPN(surge)|Supplyvoltage surge between P -NU, -NV, -NW|500|V|
|VCES|Collector-emitter voltage each IGBT|600|V|
|±IC|Continuous collector current each IGBT (TC= 25 °C)|12|A|
||Continuous collector current each IGBT (TC= 80 °C)|8||
|±ICP|Peak collector current each IGBT (less than 1ms)|24|A|
|PTOT|Total dissipation at TC=25°C each IGBT|50|W|
|tscw|Short circuit withstand time, VCE= 300V, TJ= 125 °C,<br>VCC= Vboot= 15 V, VIN= 0 to 5 V|5|μs|



**Table 4: Control parts** 

|**Symbol**|**Parameter**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|
|VCC|Supply voltage between VCCH-GND, VCCL-GND|-0.3|20|V|
|VBOOT|Bootstrap voltage|-0.3|619|V|
|VOUT|Output voltage between U, V, W and GND|VBOOT- 21|VBOOT+ 0.3|V|
|VCIN|Comparator input voltage|-0.3|20|V|
|VIN|Logic input voltage applied between HINx, LINx and<br>GND|-0.3|15|V|
|~~V~~SD<br>OD<br>⁄|Open drain voltage|-0.3|7|V|
|~~I~~SD<br>OD<br>⁄|Open drain sink current||10|mA|
|VTSO|Temperature sensor output voltage|-0.3|5.5|V|
|ITSO|Temperature sensor output current||7|mA|



## **Table 5: Total system** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VISO|Isolation withstand voltage applied between each pin and heat sink<br>plate (AC voltage, t = 60 sec.)|1500|Vrms|
|TJ|Power chips operating junction temperature|-40 to 175|°C|
|TC|Module case operation temperature|-40 to 125|°C|



## **Table 6: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rth(j-c)|Thermal resistancejunction-case single IGBT|3|°C/W|
||Thermal resistancejunction-case single diode|6||



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**STGIB8CH60TS-E** 

**Electrical** characteristics 

## **3 Electrical characteristics** 

(Tj= 25°C unless otherwise noted). 

## **3.1 Inverter part** 

**Table 7: Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICES|Collector-cut off current|VCE= 600 V,<br>VCC= Vboot= 15 V|-||100|µA|
|VCE(sat)|Collector-emitter saturation<br>voltage|VCC= Vboot= 15 V,<br>VIN_(1)_= 0 to 5 V, IC= 8 A|-|1.68|2.18|V|
|||VCC= Vboot= 15 V,<br>VIN_(1)_= 0 to 5 V,<br>IC= 12 A|-|1.91|||
|VF|Diode forward voltage|VIN_(1)_= 0, IC= 8 A|-|1.55|2.1|V|
|||VIN_(1)_= 0, IC= 12 A|-|1.7||V|



## **Notes:** 

(1)Applied between HINx, LINx and GND for x = U, V, W. 

**Table 8: Inductive load switching time and energy** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ton_(1)_|Turn-on time|VDD= 300 V,<br>VCC= Vboot= 15 V,<br>VIN_(2)_= 0 to 5 V,<br>IC= 8 A|-|280|-|ns|
|tc(on)_(1)_|Cross-over time on||-|142|-||
|toff_(1)_|Turn-off time||-|400|-||
|tc(off)_(1)_|Cross-over time off||-|85|-||
|trr|Reverse recoverytime||-|215|-||
|Eon|Turn-on switchingenergy||-|201|-|µJ|
|Eoff|Turn-off switchingenergy||-|102|-||
|Err|Reverse recoveryenergy||-|8.1|-||
|ton_(1)_|Turn-on time|VDD= 300 V,<br>VCC= Vboot= 15 V,<br>VIN_(2)_= 0 to 5 V,<br>IC= 12 A|-|300|-|ns|
|tc(on)_(1)_|Cross-over time on||-|175|-||
|toff_(1)_|Turn-off time||-|380|-||
|tc(off)_(1)_|Cross-over time off||-|85|-||
|trr|Reverse recovery time||-|220|-||
|Eon|Turn-on switching energy||-|340|-|µJ|
|Eoff|Turn-off switching energy||-|160|-||
|Err|Reverse recovery energy||-|10.2|-||



## **Notes:** 

(1)ton and toff include the propagation delay time of the internal drive. tC(on) and tC(off) are the switching time of the IGBT itself under the internally given gate driving condition. 

> (2)Applied between HINx, LINx and GND for x = U, V, W. 

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**Electrical** characteristics 

**Figure 2: Switching time test circuit** 

**Figure 3: Switching time definition** 

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**STGIB8CH60TS-E** 

**Electrical** characteristics 

## **3.2 Control / protection part** 

**Table 9:  High and low side drivers** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Vil|Low logic level voltage||||0.8|V|
|Vih|High logic level voltage||2|||V|
|IINh|IN logic “1” input bias<br>current|INx= 15 V|80|150|200|µA|
|IINl|IN logic “0” input bias<br>current|INx= 0 V|||1|µA|
|**High side**|||||||
|VCC_hys|VCCUV hysteresis||1.2|1.4|1.7|V|
|VCCH_th(on)|VCCHUV turn-on threshold||11|11.5|12|V|
|VCCH_th(off)|VCCHUV turn-off threshold||9.6|10.1|10.6|V|
|VBS_hys|VBSUV hysteresis||0.5|1|1.6|V|
|VBS_th(on)|VBSUV turn-on threshold||10.1|11|11.9|V|
|VBS_th(off)|VBSUV turn-off threshold||9.1|10|10.9|V|
|IQBSU|Under voltage VBS<br>quiescent current|VBS= 9 V, HINx_(1)_= 5 V||55|75|µA|
|IQBS|VBSquiescent current|VCC= 15 V, HINx_(1)_= 5 V||125|170|µA|
|Iqccu|Undervoltage quiescent<br>supplycurrent|VCC= 9 V, HINx_(1)_= 0||190|250|µA|
|Iqcc|Quiescent current|VCC= 15 V, HINx_(1)_= 0||560|730|µA|
|RDS(on)|BS driver ON resistance|||150||Ω|
|**Low side**|||||||
|VCC_hys|VCCUV hysteresis||1.1|1.4|1.6|V|
|VCCL_th(on)|VCCLUV turn-on threshold||10.4|11.6|12.4|V|
|VCCL_th(off)|VCCLUV turn-off threshold||9.0|10.3|11|V|
|Iqccu|Undervoltage quiescent<br>supply current|VCC= 10 V, SD<br>pulled<br>to 5 V through<br>RSD = 10 kΩ,<br>CIN= LINx_(1)_= 0||600|800|µA|
|Iqcc|Quiescent current|VCC= 15 V, SD<br>= 5 V,<br>CIN= LINx_(1)_= 0||700|900|µA|
|VSSD|SmartSD<br>̅̅̅̅unlatch threshold||0.5|0.6|0.75|V|
|ISDh|SD<br>̅̅̅̅logic “1” input bias<br>current|SD<br>̅̅̅̅= 5 V|25|50|70|µA|
|ISDl|SD<br>̅̅̅̅logic “0” input bias<br>current|SD<br>̅̅̅̅= 0 V|||1|µA|



## **Notes:** 

(1)Applied between HINx, LINx and GND for x = U, V, W. 

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**Electrical** characteristics 

||**Table 10: Temperature sensor output**|**Table 10: Temperature sensor output**|**Table 10: Temperature sensor output**||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VTSO|Temperature sensor output voltage|Tj= 25 °C|0.974|1.16|1.345|V|
|ITSO_SNK|Temperature sensor sink current capability|||0.1||mA|
|ITSO_SRC|Temperature sensor source current capability||4|||mA|



**Table 11: Sense comparator (VCC = 15 V, unless otherwise is specified)** 

|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICIN|CINinput bias current|VCIN=1 V|-0.2||0.2|μA|
|Vref|Internal reference voltage||460|510|560|mV|
|VOD|Open drain low level output<br>voltage|Iod= 5 mA|||500|mV|
|tCIN_SD|CINcomparator delay toSD<br>̅̅̅̅|SD<br>̅̅̅̅pulled to 5 V through<br>RSD= 10 kΩ; measured applying a<br>voltage step 0-1 V to Pin CIN 50 %<br>CIN to 90 %SD<br>̅̅̅̅|240|320|410|ns|
|SRSD|SD<br>̅̅̅̅fall slew rate|SD<br>̅̅̅̅pulled to 5 V through<br>RSD= 10 kΩ; CL= 1 nF throughSD<br>̅̅̅̅<br>and ground; 90%SD<br>̅̅̅̅to 10%SD<br>̅̅̅̅||25||V/μs|



_“Please keep in mind that comparator remains enabled even if VCC is in UVLO condition but higher than 4 V”._ 

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**Fault** management 

## **4 Fault management** 

The device integrates an open-drain output connected to the ̅̅̅̅SD pin. As soon as a fault occurs, the open-drain is activated and LVGx outputs are forced low. Two types of fault can be pointed out: 

- Overcurrent (OC) sensed by the internal comparator (see more detail in _Section 1: "Internal schematic and pin description"_ ); 

- Undervoltage on supply voltage (VCC); 

Each fault enables the SD open drain for a specified time, as described in the following table. 

|**Symbol**|**Parameter**|**Event time**|**SD open-drain enable**<br>**time result**|
|---|---|---|---|
|OC|Overcurrent event|≤ 20 μs|20 μs|
|||≥ 20 μs|OC time|
|UVLO|Undervoltage lockout event|≤ 50 μs|50 μs|
|||≥ 50 μs until the VCC_LS exceed the<br>VCC_LS UV turn ON threshold|UVLO time|



Actually, the device remains in a fault condition (disabled) for a time also depending on RC network connected to the ̅̅̅̅ SD at low logic level and LVGx outputs ̅̅̅̅SD pin. The network generates a time contribute, which is added to the internal value. 

**Figure 4: Overcurrent timing (without contribution of RC network on** 𝐒𝐃̅̅̅̅ **)** 

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GIPG120520141638FSR<br>**----- End of picture text -----**<br>


~~eS~~ 10/24 DocID029830 Rev 1 

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**Fault** management 

**==> picture [285 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5: UVLO timing (without contribution of RC network on  𝐒𝐃̅̅̅̅ )<br>**----- End of picture text -----**<br>


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GIPG120520141644FSR<br>**----- End of picture text -----**<br>


## **4.1 TSO output** 

The device integrates a temperature sensor. A voltage proportional to the die temperature is available on the TSO pin. When this function is not used, the pin can be left floating. 

## **4.2** 

## **Smart shutdown function** 

The device integrates a comparator committed to the fault sensing function. The comparator input can be connected to an external shunt resistor in order to implement a simple overcurrent detection function. The output signal of the comparator is fed to an integrated MOSFET with the open drain output available on ̅̅̅̅SD input. When the comparator triggers, the device is set to shutdown state and its outputs are all set to low level. 

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**Fault** management 

**Figure 6: Smart shutdown timing waveforms in case of overcurrent event)** 

**==> picture [407 x 565] intentionally omitted <==**

_Note: RON_OD=VOD/5 mA see Table 11: "Sense comparator (VCC = 15 V, unless otherwise is specified)"; RPD_SD (typ) =5 V/ISDh._ 

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**Fault** management 

In common overcurrent protection architectures, the comparator output is usually connected to the ̅̅̅̅SD input and an RC network is connected to this ̅̅̅̅SD line in order to provide a mono-stable circuit which implements a protection time that follows the fault condition. Differently from the common fault detection systems, the device Smart shutdown architecture allows to immediately turn-off the outputs gate driver in case of fault, by minimizing the propagation delay between the fault detection event and the actual outputs switch-off. In fact the time delay between the fault and the outputs turn off is no more dependent on the RC value of the external network connected to the pin. In the smart shutdown circuitry, the fault signal has a preferential path which directly switches off the outputs after the comparator triggering. At the same time the internal logic turns on the open drain output and holds it on until the ̅̅̅̅SD voltage goes below the VSSD threshold and toc time is elapsed. The driver outputs restart following the input pins as soon as the voltage at the ̅̅̅̅SD pin reaches the higher threshold of the ̅̅̅̅SD logic input. The Smart shutdown system provides the possibility to increase the time constant of the external RC network (that is the disable time after the fault event) up to very large values without increasing the delay time of the protection. 

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**Application** circuit example 

**==> picture [270 x 16] intentionally omitted <==**

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5  Application circuit example<br>**----- End of picture text -----**<br>


**Figure 7: Application circuit example** 

**==> picture [465 x 520] intentionally omitted <==**

Application designers are free to use a different scheme based on the specifications of the device. 

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**Guidelines** 

## **6 Guidelines** 

1. Input signals HIN and LIN are active-high logic. A 100 kΩ (typ.) pull-down resistor is built in for each input pin. To prevent input signal oscillation, the wiring of each input should be as short as possible and the use of RC filters (R1, C1) on each input signal is recommended. The filters should be implemented with a time constant of about 100 ns and placed as close as possible to the IPM input pins. 

2. The use of a bypass capacitor CVCC (aluminum or tantalum) can help reduce the transient circuit demand on the power supply. Also, to reduce high frequency switching noise distributed on the power lines, placing a decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) as close as possible to each Vcc pin and in parallel with the bypass capacitor is recommended. 

3. The use of RC filter (RSF, CSF) for preventing protection circuit malfunction is recommended. The time constant (RSF x CSF) should be set to 1 μs and the filter must be placed as close as possible to the CIN pin. 

4. The is an input/output pin (open drain type if used as output). It is recommended that it be pulled up to a power supply (i.e., MCU bias at 3.3/5 V) by a resistor value capable of keeping the Iod no higher than 5 mA (Vis ON). The filter on event and placed as close as possible to the ̅̅̅̅SD should be sized to obtain a desired restart time after a fault OD ≤ 500 mV when the open drain MOSFET ̅̅̅̅SD pin. 

5. A decoupling capacitor CTSO between 1 nF and 10 nF can be used to increase the noise immunity of the TSO thermal sensor; a similar decoupling capacitor COT (between 10 nF and 100 nF) can be implemented if the NTC thermistor is available and used. In both cases, their effectiveness is improved if the capacitors are placed close to the MCU. 

6. The decoupling capacitor C3 (100 to 220 nF with low ESR and low ESL) in parallel with each Cboot is useful to filter high frequency disturbances. Both Cboot and C3 (if present) should be placed as close as possible to the U,V,W and Vboot pins. Bootstrap negative electrodes should be connected to U,V,W terminals directly and separated from the main output wires. 

7. To prevent overvoltage on the VCC pin, a Zener diode (Dz1) can be used. Similarly on the Vboot pin, a Zener diode (Dz2) can be placed in parallel with each Cboot. 

8. The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the electrolytic capacitor Cvdc is useful to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc). 

9. By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible. 

10. Low inductance shunt resistors should be used for phase leg current sensing 

11. In order to avoid malfunctions, the wiring between N pins, the shunt resistor and PWR_GND should be as short as possible. 

12. The connection of SGN_GND to PWR_GND at only one point (close to the shunt resistor terminal) can help to reduce the impact of power ground fluctuation. 

These guidelines are useful for application design to ensure the specifications of the device. For further details, please refer to the relevant application note. 

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**Guidelines** 

**STGIB8CH60TS-E** 

**Table 13: Recommended operating conditions** 

|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supply voltage|Applied between P-Nu, NV, Nw||300|400|V|
|VCC|Control supply voltage|Applied between VCC-GND|13.5|15|18|V|
|VBS|High side bias voltage|Applied between VBOOTi-OUTifor i = U, V, W|13||18|V|
|tdead|Blanking time to prevent<br>Arm-short|For each input signal|1.0|||μs|
|fPWM|PWM input signal|-40 °C < TC< 100 °C -40 °C < Tj< 125 °C|||20|kHz|
|TC|Case operation<br>temperature||||100|°C|



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**NTC** thermistor 

## **7 NTC thermistor** 

**Table 14: NTC thermistor** 

|**Symbol**|**Parameter**|**Test condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25 °C||85||kΩ|
|R125|Resistance|T = 125 °C||2.6||kΩ|
|B|B-constant|T = 25 °C to 100 °C||4092||K|
|T|Operating temperature range||-40||125|°C|



**Figure 8: NTC resistance vs. temperature** 

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(k<br>3000<br>2500<br>2000<br>1500<br>\<br>1000<br>500<br>PPE<br>0<br>-50 -25 0 25 50 75 100 125 (°C)<br>GIPG120520142249FSR<br>**----- End of picture text -----**<br>


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**NTC** thermistor 

**STGIB8CH60TS-E** 

**Figure 9: NTC resistance vs. temperature - zoom** 

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(kΩ)<br>30<br>25<br>20<br>Max<br>Typ<br>15 Min<br>10<br>5<br>0<br>50 60 70 80 90 100 110 120 (°C)<br>GIPG120520141304FSR<br>**----- End of picture text -----**<br>


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**Electrical** characteristics (curves) 

## **8 Electrical characteristics (curves)** 

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Figure 10: Output characteristics  Figure 11: Vce(sat) vs collector current<br>I C IGBT141220151035OC25 V CE(SAT) IGBT141220151055VCEC<br>(A) V CC= 18 V (V)<br>3.2 V CC= 15 V<br>20<br>15 V 13 V<br>2.8<br>16 T J= 175 °C<br>2.4<br>12<br>2<br>8 1.6 T J= 25 °C<br>4<br>1.2<br>0 0.8<br>0 0.5 1 1.5 2 2.5 V CE(V) 0 4 8 12 16 20 I C(A)<br>Figure 12: Diode VF vs forward current  Figure 13: Eon switching energy vs collector<br>current<br>V F IGBT141220151056DVF<br>(V)<br>T J= 25 °C<br>2<br>1.6<br>T J= 175 °C<br>1.2<br>0.8<br>0.4<br>0<br>0 4 8 12 16 20 I F(A)<br>**----- End of picture text -----**<br>


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**Electrical** characteristics (curves) 

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Figure 14: Eoff switching energy vs collector current  Figure 15: VTSO output characteristics vs LVIC<br>temperature<br>**----- End of picture text -----**<br>


**Figure 16: Thermal impedance for SDIP2B-26L IGBT** 

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K GIPD290720151032FSR<br>10 -1<br>10 -2<br>10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p(s)<br>**----- End of picture text -----**<br>


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**Package** information 

## **9 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **9.1 SDIP2B-26L type E** 

**Figure 17: SDIP2B-26L type E package outline** 

**==> picture [465 x 359] intentionally omitted <==**

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**Package** information 

**Table 15: SDIP2B-26L type E package mechanical data (dimensions are in mm)** 

|**Ref.**|**Dimensions**|
|---|---|
|A|38.00 ± 0.50|
|A1|1.22 ± 0.25|
|A2|1.22 ± 0.25|
|A3|35.00 ± 0.30|
|c|1.50 ± 0.05|
|B|24.00 ± 0.50|
|B1|12.00|
|B2|14.40 ± 0.50|
|B3|29.20 ± 0.50|
|B4|33.70 ± 0.50|
|C|3.50 ± 0.20|
|C1|5.50 ± 0.50|
|C2|9.50 ± 0.50|
|e|3.556 ± 0.200|
|e1|1.778 ± 0.200|
|e2|7.62 ± 0.20|
|e3|5.08 ± 0.20|
|e4|2.54 ± 0.20|
|D|28.95 ± 0.50|
|D1|3.025 ± 0.300|
|E|12.40 ± 0.50|
|E1|3.75 ± 0.30|
|E2|1.80|
|f|0.60 ± 0.15|
|f1|0.50 ± 0.15|
|F|2.10 ± 0.15|
|F1|1.10 ± 0.15|
|R|1.60 ± 0.20|
|T|0.400 ± 0.025|
|V|0° / 5°|



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**Revision** history 

## **10 Revision history** 

**Table 16: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Oct-2016|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2016 STMicroelectronics – All rights reserved 

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## Links

- [View this product on Novapart](https://novapart.co/products/STGIB8CH60TS-E/intelligent-power-module-ipm-igbt-600-v-12-a-15-kv)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stgib8ch60ts-e/ipm-module-igbt-3-ph-12a-600v/dp/2767841)
---

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