# IGBT, 100 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 Pins

![Product image](https://novapart.co/image/farnell:1542220/)

**URL**: https://novapart.co/products/STGE50NC60WD/igbt-100-a-25-v-260-w-600-isotop-4-pins
**SKU**: STGE50NC60WD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €12.9500
**Stock**: 10+

## Description

DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:ISOTOP; No. of Pins:4Pins;

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Product Range | - |
| Power Dissipation | 260W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | ISOTOP |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1542220/)

**==> picture [61 x 39] intentionally omitted <==**

## **STGE50NC60WD** N-channel 50A - 600V - ISOTOP Ultra fast switchin PowerMESH™ IGBT g 

## **Features** 

|**Features**||||
|---|---|---|---|
|**Type**|**VCES**|**VCE(sat)(Max)**<br>**@25°C**|**IC**<br>**@100°C**|
|STGE50NC60WD|600V|2.5V|50A|



- High current capability 

- High frequency operation 

- Low CRES/CIES ratio (no cross-conduction susceptibility 

**==> picture [90 x 65] intentionally omitted <==**

**ISOTOP** 

- Very soft ultra fast recovery antiparallel diode 

## **Description** 

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency applications. 

## **Applications** 

- Very high frequency inverters 

- HF, SMPS and PFC in both hard switching and resonant topologies 

- UPS 

## **Figure 1. Internal schematic diagram** 

**==> picture [194 x 84] intentionally omitted <==**

- Motor drivers 

- Welding 

## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGE50NC60WD|GE50NC60WD|ISOTOP|Tube|



_www.st.com_ 

1/14 

July 2007 

Rev 2 

**STGE50NC60WD** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**STGE50NC60WD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltagesGS= 0)|600|V|
|IC<br>(1)|Collector current (continuous) at TC= 25°C|100|A|
|IC<br>(1)|Collector current (continuous) at TC= 100°C|50|A|
|ICL<br>(2)|Collector current (pulsed)|250|A|
|VGE|Gate-emitter voltage|± 20|V|
|IF|Diode RMS forward current at Tc=25°C|30|A|
|PTOT|Total dissipation at TC= 25°C|260|W|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|||



1. Calculated according to the iterative formula: 

IC(TC) = ------------------------------------------------------------------------------------------------------RTHJ – C × TJMAXVCESAT– (TCMAX)([T] C,[I] C) 

2. Pulse width limited by Tjmax 

## **Table 3. Thermal resistance** 

|**Table 3.**|**Thermal resistance**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Min**|**Typ**|**Max**|**Unit**|
|Rthj-case|Thermal resistance junction-case (IGBT)|--|--|0.48|°C/W|
|Rthj-case|Thermal resistance junction-case (diode)|--|--|1.5|°C/W|
|Rthj-amb|Thermal resistance junction-amb|--|--|50|°C/W|



3/14 

**STGE50NC60WD** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TJ = 25 °C unless otherwise specified) 

## **Table 4. Static** 

|**Table 4.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VBR(CES)|Collector-emitter<br>breakdown voltage|IC= 1mA, VGE= 0|600|||V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15V, IC= 40A<br>VGE= 15V, IC=40A,Tc=125°C||2.1<br>1.9|2.6|V<br>V|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250 µA|3.75||5.75|V|
|ICES|Collector cut-off current<br>(VGE= 0)|VCE= Max rating,TC= 25°C<br>VCE= Max rating,TC= 125°C|||500<br>5|µA<br>mA|
|IGES|Gate-emitter leakage<br>current (VCE= 0)|VGE= ±20V, VCE= 0|||±100|nA|
|gfs|Forward transconductance|VCE= 15V,IC= 40A||25||S|



## **Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25V, f = 1MHz,<br>VGE= 0||4700<br>410<br>90||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 390V, IC= 40A,<br>VGE= 15V,<br>_Figure 17_||195<br>32<br>82||nC<br>nC<br>nC|



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**STGE50NC60WD** 

**Electrical characteristics** 

**Table 6. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>_Figure 16_,_Figure 18_||52<br>17<br>2400||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Turn-on delay time<br>Current rise time<br>Turn-on current slope|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>Tj = 125°C<br>_Figure 16_,_Figure 18_||50<br>19<br>2020||ns<br>ns<br>A/µs|
|tr(Voff)<br>td(Voff)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>_Figure 16_,_Figure 18_||31<br>240<br>35||ns<br>ns<br>ns|
|tr(Voff)<br>td(Voff)<br>tf|Off voltage rise time<br>Turn-off delay time<br>Current fall time|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>Tj = 125°C<br>_Figure 16_,_Figure 18_||59<br>280<br>63||ns<br>ns<br>ns|



## **Table 7. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>_Figure 18_||365<br>560<br>925|470<br>790<br>1260|µJ<br>µJ<br>µJ|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching losses<br>Total switching losses|VCC= 390V, IC= 40A<br>RG= 3.3Ω, VGE= 15V,<br>Tj = 125°C<br>_Figure 18_||635<br>910<br>1545||µJ<br>µJ<br>µJ|



1. Eon is the tun-on losses when a typical diode is used in the test circuit in _Figure 18_ If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 

2. Turn-off losses include also the tail of the collector current 

5/14 

**STGE50NC60WD** 

**Electrical characteristics** 

**Table 8. Collector-emitter diode** 

|**Table 8.**|**Collector-emitter diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Vf|Forward on-voltage|If= 15A<br>If= 15A, Tj = 125°C<br>If= 40A, Tj = 125°C||1.5<br>1.2<br>1.35|2.9|V<br>V<br>V|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|If= 40A,VR= 50V,<br>Tj = 25°C, di/dt = 100 A/µs<br>_Figure 19_||55<br>100<br>3.6||ns<br>nC<br>A|
|trr<br>Qrr<br>Irrm|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|If= 40A,VR= 50V,<br>Tj =125°C, di/dt = 100A/µs<br>_Figure 19_||164<br>525<br>6.4||ns<br>nC<br>A|



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**STGE50NC60WD** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Output characteristics Figure 3. Transfer characteristics** 

**==> picture [170 x 169] intentionally omitted <==**

**==> picture [170 x 169] intentionally omitted <==**

**Figure 4. Transconductance** 

**==> picture [175 x 167] intentionally omitted <==**

**Figure 5. Collector-emitter on voltage vs temperature** 

**==> picture [187 x 169] intentionally omitted <==**

**Figure 6. Gate charge vs gate-source voltage Figure 7.** 

**Capacitance variations** 

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**STGE50NC60WD** 

**Electrical characteristics** 

**Figure 8. Normalized gate threshold voltage Figure 9. Collector-emitter on voltage vs vs temperature collector current** 

**==> picture [185 x 167] intentionally omitted <==**

**==> picture [181 x 169] intentionally omitted <==**

**Figure 10. Normalized breakdown voltage vs Figure 11. Switching losses vs temperature temperature** 

**==> picture [179 x 169] intentionally omitted <==**

**==> picture [177 x 170] intentionally omitted <==**

**Figure 12. Switching losses vs gate resistance Figure 13.** 

**Switching losses vs collector current** 

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8/14 

**STGE50NC60WD** 

**Electrical characteristics** 

## **Figure 14. Turn-off SOA** 

**==> picture [173 x 169] intentionally omitted <==**

## **Figure 15. Emitter-collector diode characteristics** 

**==> picture [183 x 169] intentionally omitted <==**

9/14 

**STGE50NC60WD** 

**Test circuit** 

## **3 Test circuit** 

**Figure 16. Test circuit for inductive load Figure 17. Gate charge test circuit switching** 

**==> picture [207 x 143] intentionally omitted <==**

**==> picture [209 x 143] intentionally omitted <==**

**Figure 18. Switching waveform** 

**Figure 19. Diode recovery time waveform** 

**==> picture [443 x 134] intentionally omitted <==**

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**STGE50NC60WD** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

11/14 

**STGE50NC60WD** 

**Package mechanical data** 

## **ISOTOP MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|11.8||12.2|0.466||0.480|
|B|8.9||9.1|0.350||0.358|
|C|1.95||2.05|0.076||0.080|
|D|0.75||0.85|0.029||0.033|
|E|12.6||12.8|0.496||0.503|
|F|25.15||25.5|0.990||1.003|
|G|31.5||31.7|1.240||1.248|
|H|4|||0.157|||
|J|4.1||4.3|0.161||0.169|
|K|14.9||15.1|0.586||0.594|
|L|30.1||30.3|1.185||1.193|
|M|37.8||38.2|1.488||1.503|
|N|4|||0.157|||
|O|7.8||8.2|0.307||0.322|



**==> picture [310 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
G A<br>B<br>O<br>N<br>J<br>C<br>K<br>L<br>M<br>D E F<br>H<br>**----- End of picture text -----**<br>


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**STGE50NC60WD** 

**Revision History** 

## **5 Revision History** 

**Table 9. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|07-May-2006|1|First release|
|24-Jul-2007|2|New_Figure 1: Internal schematic diagram_|



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**STGE50NC60WD** 

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