# IGBT Module, Single, 200 A, 1.6 V, 600 W, 150 °C, ISOTOP

![Product image](https://novapart.co/image/farnell:1293645/)

**URL**: https://novapart.co/products/STGE200NB60S/igbt-module-single-200-a-16-v-600-w-150-c-isotop
**SKU**: STGE200NB60S
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €14.1000
**Stock**: 50+
**Lead Time**: 113 days (indicative)

## Description

DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.2V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:ISOTOP; No. of Pins:4

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Igbt Technology | - |
| Igbt Termination | Screw |
| Power Dissipation | 600W |
| Igbt Configuration | Single |
| Transistor Mounting | Panel |
| Transistor Case Style | ISOTOP |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1293645/)

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## **STGE200NB60S** N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT 

## **General features** 

|**TYPE**|**VCES**|**VCE(sat)**<br>**(typ.)**|**IC**|**TC**|
|---|---|---|---|---|
|STGE200NB60S|600V|1.2V<br>1.3V|150A<br>200A|100°C<br>25°C|



- High input impedance (voltage driven) 

- Low on-voltage drop (Vcesat) 

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ISOTOP<br>**----- End of picture text -----**<br>


- Off losses include tail current 

- Low gate charge 

- High current capability 

## **Description** 

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). 

## **Applications** 

- Low frequency motor controls 

## **Internal schematic diagram** 

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- Aluminum welding equipment 

## **Order codes** 

|**Part number**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STGE200NB60S|GE200NB60S|ISOTOP|Tube|



1/13 

November 2006 

Rev 8 

_www.st.com_ 

**STGE200NB60S** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|



2/13 

**STGE200NB60S** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Table 1.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VCES|Collector-emitter voltage (VGS= 0)|600|V|
|VGE|Gate-emitter voltage|±20|V|
|IC|Collector current (continuous) at TC= 25°C|200|A|
|IC|Collector current (continuous) at TC= 100°C|150|A|
|ICM<br>(1)|Collector current (pulsed)|400|A|
|PTOT|Total dissipation at TC= 25°C|600|W|
||Derating factor|4.8|W/°C|
|VISO|Insulation winthstand voltage (DC)|2500|V|
|Tstg|Storage temperature|– 55 to 150|°C|
|Tj|Operating junction temperature|||



1. Pulse width limited by safe operating area 

## **Table 2. Thermal resistance** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|0.208|°C/W<br>°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|30|°C/W|



3/13 

**STGE200NB60S** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 3. Static** 

|**Table 3.**|**Static**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VBR(CES)|Collector-emitter<br>breakdown voltage|IC= 250µA, VGE= 0|600|||V|
|ICES|Collector cut-off<br>(VGE= 0)|VCE= Max rating, @ 25°C<br>VCE= Max rating, @ 125°C|||500<br>5|µA<br>mA|
|IGES|Gate-emitterleakage<br>current (VCE= 0)|VGE= ±20V, VCE= 0|||±100|nA|
|VGE(th)|Gate threshold voltage|VCE= VGE, IC= 250µA|3||5|V|
|VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15V, IC= 100A<br>VGE= 15V, IC=150A,@100°C||1.2<br>1.2|1.6|V<br>V|
|gfs|Forward transconductance|VCE= 15V,IC= 100A||80||S|



## **Table 4. Dynamic** 

|**Table 4.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Cies<br>Coes<br>Cres|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VCE= 25V, f = 1MHz, VGE= 0||1560<br>0<br>1100<br>95||pF<br>pF<br>pF|
|Qg<br>Qge<br>Qgc|Total gate charge<br>Gate-emitter charge<br>Gate-collector charge|VCE= 480V, IC= 100A,<br>VGE= 15V||560<br>70<br>170||nC<br>nC<br>nC|
|ICL|Latching current|Vclamp= 480V<br>Tj = 125°C , RG= 10Ω|300|||A|



4/13 

**STGE200NB60S** 

**Electrical characteristics** 

## **Table 5. Switching on/off (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)<br>tr<br>(di/dt)on|Delay time<br>Current rise time<br>Turn-on current slope|IC= 100A , VCC= 480V<br>VGE= 15V , RG= 3Ω<br>Tj = 25°C_(see Figure 17)_||64<br>112<br>1840||ns<br>ns<br>A/µs|
|td(on)<br>tr<br>(di/dt)on|Dealy time<br>Current rise time<br>Turn-on current slope|IC= 100A , VCC= 480V<br>VGE= 15V , RG= 3Ω<br>Tj = 125°C_(see Figure 17)_||56<br>114<br>1800||ns<br>ns<br>A/µs|
|tc<br>tr(Voff)<br>td(off)<br>tf|Cross-over time<br>Off voltage rise time<br>Delay time<br>Current fall time|IC= 100A , VCC= 480V<br>VGE= 15V , RG= 3Ω<br>Tj = 25°C_(see Figure 17)_||2.98<br>1.7<br>2.4<br>1.23||µs<br>µs<br>µs<br>µs|
|tc<br>tr(Voff)<br>td(off)<br>tf|Cross-over time<br>Off voltage rise time<br>Delay time<br>Current fall time|IC= 100A , VCC= 480V<br>VGE= 15V , RG= 3Ω<br>Tj = 125°C_(see Figure 17)_||4.52<br>2.6<br>2.8<br>1.8||µs<br>µs<br>µs<br>µs|



## **Table 6. Switching energy (inductive load)** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching loss<br>Total switching loss|VCC= 480V, IC= 100A<br>RG= 3Ω, VGE= 15V, Tj= 25°C<br>_(see Figure 17)_||11.7<br>59<br>70.7||mJ<br>mJ<br>mJ|
|Eon<br>(1)<br>Eoff<br>(2)<br>Ets|Turn-on switching losses<br>Turn-off switching loss<br>Total switching loss|VCC= 480V, IC= 100A<br>RG= 3Ω, VGE= 15V,<br>Tj= 125°C_(see Figure 17)_||12<br>92<br>104||mJ<br>mJ<br>mJ|



1. Eon is the turn-on losses when a typical diode is used in the test circuit in _Figure 17_ 

2. Turn-off losses include also the tail of the collector current. 

5/13 

**STGE200NB60S** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 1. Output characteristics** 

**Figure 2. Transfer characteristics** 

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**Figure 3. Transconductance** 

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**Figure 4. Collector-emitter on voltage vs temperature** 

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**Figure 5. Gate charge vs gate-source voltage Figure 6.** 

**Capacitance variations** 

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6/13 

**STGE200NB60S** 

**Electrical characteristics** 

**Figure 7. Normalized gate threshold voltage Figure 8. Collector-emitter on voltage vs vs temperature collector current** 

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**Figure 9. Normalized breakdown voltage vs Figure 10. Switching losses vs temperature temperature** 

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**Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current** 

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7/13 

**STGE200NB60S** 

**Electrical characteristics** 

## **Figure 13. Thermal impedance Figure 14. Turn-off SOA** 

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8/13 

**STGE200NB60S** 

**Test circuit** 

## **3 Test circuit** 

**Figure 15. Test circuit for inductive load switching** 

**Figure 16. Gate charge test circuit** 

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**Figure 17. Switching waveform** 

**Figure 18. Diode recovery time waveform** 

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9/13 

**STGE200NB60S** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

10/13 

**STGE200NB60S** 

**Package mechanical data** 

## **ISOTOP MECHANICAL DATA** 

|**DIM**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
|**.**|**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|11.8||12.2|0.466||0.480|
|B|8.9||9.1|0.350||0.358|
|C|1.95||2.05|0.076||0.080|
|D|0.75||0.85|0.029||0.033|
|E|12.6||12.8|0.496||0.503|
|F|25.15||25.5|0.990||1.003|
|G|31.5||31.7|1.240||1.248|
|H|4|||0.157|||
|J|4.1||4.3|0.161||0.169|
|K|14.9||15.1|0.586||0.594|
|L|30.1||30.3|1.185||1.193|
|M|37.8||38.2|1.488||1.503|
|N|4|||0.157|||
|O|7.8||8.2|0.307||0.322|



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**----- Start of picture text -----**<br>
G A<br>B<br>O<br>N<br>J<br>C<br>K<br>L<br>M<br>D E F<br>H<br>**----- End of picture text -----**<br>


11/13 

**STGE200NB60S** 

**Revision history** 

## **5 Revision history** 

**Table 7. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-Feb-2005|6|Complete version|
|26-Jul-2006|7|New template|
|03-Nov-2006|8|New value inserted on_Table 1.: Absolute maximum ratings_|



12/13 

**STGE200NB60S** 

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13/13 



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